RU2335582C2 - Монокристаллическая шпинельная пластина - Google Patents
Монокристаллическая шпинельная пластина Download PDFInfo
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- RU2335582C2 RU2335582C2 RU2006109199/15A RU2006109199A RU2335582C2 RU 2335582 C2 RU2335582 C2 RU 2335582C2 RU 2006109199/15 A RU2006109199/15 A RU 2006109199/15A RU 2006109199 A RU2006109199 A RU 2006109199A RU 2335582 C2 RU2335582 C2 RU 2335582C2
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- RU
- Russia
- Prior art keywords
- plate according
- plate
- face
- spinel
- plane
- Prior art date
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- 239000013078 crystal Substances 0.000 title claims abstract description 38
- 229910052596 spinel Inorganic materials 0.000 title claims abstract description 36
- 239000011029 spinel Substances 0.000 title claims abstract description 36
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 26
- 230000007017 scission Effects 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 229910052742 iron Inorganic materials 0.000 claims abstract description 8
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 4
- 229910052788 barium Inorganic materials 0.000 claims abstract description 4
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 4
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 4
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 4
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 4
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 4
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 4
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 229910052738 indium Inorganic materials 0.000 abstract description 4
- 238000005275 alloying Methods 0.000 abstract description 2
- 239000000356 contaminant Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 13
- 238000001816 cooling Methods 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 238000000227 grinding Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000000155 melt Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 230000005693 optoelectronics Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000005162 X-ray Laue diffraction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 208000029152 Small face Diseases 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 229910052566 spinel group Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/668,610 | 2003-09-23 | ||
| US10/668,610 US7326477B2 (en) | 2003-09-23 | 2003-09-23 | Spinel boules, wafers, and methods for fabricating same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2006109199A RU2006109199A (ru) | 2006-09-10 |
| RU2335582C2 true RU2335582C2 (ru) | 2008-10-10 |
Family
ID=34313522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2006109199/15A RU2335582C2 (ru) | 2003-09-23 | 2004-09-17 | Монокристаллическая шпинельная пластина |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7326477B2 (enExample) |
| EP (1) | EP1670975B1 (enExample) |
| JP (1) | JP4949839B2 (enExample) |
| AT (1) | ATE510940T1 (enExample) |
| IL (1) | IL174351A0 (enExample) |
| MY (1) | MY137813A (enExample) |
| RU (1) | RU2335582C2 (enExample) |
| TW (1) | TWI290965B (enExample) |
| WO (1) | WO2005031046A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8161388B2 (en) * | 2004-01-21 | 2012-04-17 | Rodriguez Arturo A | Interactive discovery of display device characteristics |
| US7919815B1 (en) * | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
| EP2168935A1 (de) | 2008-09-29 | 2010-03-31 | Siemens Aktiengesellschaft | Materialzusammensetzung zur Herstellung eines Feuerfestwerkstoffes sowie ihre Verwendung und Feuerfestformkörper sowie Verfahren zu seiner Herstellung |
| DE102009013685B4 (de) | 2009-03-20 | 2013-01-31 | Novaled Ag | Verwendung einer organischen Diode als organische Zenerdiode und Verfahren zum Betreiben |
| DE102012003483B3 (de) | 2012-02-21 | 2013-02-21 | Technische Universität Bergakademie Freiberg | Thermoschock- und korrosionsbeständiger Keramikwerkstoff auf der Basis von Calciumzirkonat und Verfahren zu seiner Herstellung |
| WO2016038980A1 (ja) * | 2014-09-08 | 2016-03-17 | 住友電気工業株式会社 | 炭化珪素単結晶基板およびその製造方法 |
| JP7128067B2 (ja) * | 2018-09-14 | 2022-08-30 | 株式会社ディスコ | ウエーハの生成方法およびレーザー加工装置 |
Citations (4)
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|---|---|---|---|---|
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| WO2001099155A2 (en) * | 2000-06-19 | 2001-12-27 | Nichia Corporation | Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate |
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2003
- 2003-09-23 US US10/668,610 patent/US7326477B2/en not_active Expired - Fee Related
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2004
- 2004-09-17 JP JP2006528092A patent/JP4949839B2/ja not_active Expired - Fee Related
- 2004-09-17 RU RU2006109199/15A patent/RU2335582C2/ru not_active IP Right Cessation
- 2004-09-17 WO PCT/US2004/030800 patent/WO2005031046A1/en not_active Ceased
- 2004-09-17 EP EP04788857A patent/EP1670975B1/en not_active Expired - Lifetime
- 2004-09-17 AT AT04788857T patent/ATE510940T1/de not_active IP Right Cessation
- 2004-09-21 MY MYPI20043855A patent/MY137813A/en unknown
- 2004-09-23 TW TW093128800A patent/TWI290965B/zh not_active IP Right Cessation
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Also Published As
| Publication number | Publication date |
|---|---|
| ATE510940T1 (de) | 2011-06-15 |
| EP1670975B1 (en) | 2011-05-25 |
| TW200513550A (en) | 2005-04-16 |
| WO2005031046A1 (en) | 2005-04-07 |
| JP2007506639A (ja) | 2007-03-22 |
| TWI290965B (en) | 2007-12-11 |
| JP4949839B2 (ja) | 2012-06-13 |
| RU2006109199A (ru) | 2006-09-10 |
| US7326477B2 (en) | 2008-02-05 |
| IL174351A0 (en) | 2006-08-01 |
| US20050061231A1 (en) | 2005-03-24 |
| EP1670975A1 (en) | 2006-06-21 |
| MY137813A (en) | 2009-03-31 |
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