JP5562905B2 - スピネル物品およびその製造方法 - Google Patents
スピネル物品およびその製造方法 Download PDFInfo
- Publication number
- JP5562905B2 JP5562905B2 JP2011128276A JP2011128276A JP5562905B2 JP 5562905 B2 JP5562905 B2 JP 5562905B2 JP 2011128276 A JP2011128276 A JP 2011128276A JP 2011128276 A JP2011128276 A JP 2011128276A JP 5562905 B2 JP5562905 B2 JP 5562905B2
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- Prior art keywords
- spinel
- boule
- single crystal
- wavelength range
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/24—Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Saccharide Compounds (AREA)
- Catalysts (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
るつぼ充填準備:
MgO392.1gがAl2O3(酸化アルミニウム)2876.5gに配合された。この原料は一緒に混合され、セラミックるつぼ中で1100℃、12時間加熱された。冷却後、混合物は径100mm、高さ150mmのイリジウムるつぼ中に移された。
結晶成長:
酸化物混合物を有するイリジウムるつぼは、標準的なチョクラルスキー結晶成長ステーションに置かれ、高周波加熱により酸化物混合物の融点まで加熱された。少量の酸素を添加した窒素からなる不活性雰囲気がるつぼの周囲に用いられた。
Claims (10)
- 非化学量論的組成を有し、軸が<111>結晶配向を有する円筒形のブールであるとともに、波長範囲にわたって吸光率により表される透明性窓を有し、その波長範囲は400nm〜800nmに延び、透明性窓は該波長範囲に沿って最大単一吸光率ピーク高さであるとして定義され、該最大単一吸光率ピーク高さは0.35cm−1以下である単結晶スピネル材料であって、組成が一般式aMgO・bAl2O3で表され、該スピネルがAl2O3リッチであるようにb:a比>2.5:1である、単結晶スピネル材料。
- 非化学量論的組成を有し、表面が<111>結晶配向を有するウェハであるとともに、波長範囲にわたって吸光率により表される透明性窓を有し、その波長範囲は400nm〜800nmに延び、透明性窓は該波長範囲に沿って最大単一吸光率ピーク高さであるとして定義され、該最大単一吸光率ピーク高さは0.35cm −1 以下である単結晶スピネル材料であって、組成が一般式aMgO・bAl 2 O 3 で表され、該スピネルがAl 2 O 3 リッチであるようにb:a比>2.5:1である、単結晶スピネル材料。
- 非化学量論的組成を有し、表面が<111>結晶配向を有する光学的窓であるとともに、波長範囲にわたって吸光率により表される透明性窓を有し、その波長範囲は400nm〜800nmに延び、透明性窓は該波長範囲に沿って最大単一吸光率ピーク高さであるとして定義され、該最大単一吸光率ピーク高さは0.35cm −1 以下である単結晶スピネル材料であって、組成が一般式aMgO・bAl 2 O 3 で表され、該スピネルがAl 2 O 3 リッチであるようにb:a比>2.5:1である、単結晶スピネル材料。
- 非化学量論的組成を有し、表面が<111>結晶配向を有する鏡であるとともに、波長範囲にわたって吸光率により表される透明性窓を有し、その波長範囲は400nm〜800nmに延び、透明性窓は該波長範囲に沿って最大単一吸光率ピーク高さであるとして定義され、該最大単一吸光率ピーク高さは0.35cm −1 以下である単結晶スピネル材料であって、組成が一般式aMgO・bAl 2 O 3 で表され、該スピネルがAl 2 O 3 リッチであるようにb:a比>2.5:1である、単結晶スピネル材料。
- 前記波長範囲が2000nmまで延びる請求項1〜4のいずれか1項に記載の材料。
- 前記高さが0.30cm−1以下である請求項1〜4のいずれか1項に記載の材料。
- 単一のスピネル相からなり、2次的な相を含まない請求項1〜4のいずれか1項に記載の材料。
- b:a比が3:1である請求項1〜4のいずれか1項に記載の材料。
- b:a比が4:1以下である請求項1〜4のいずれか1項に記載の材料。
- 波長1064nmで3.00GW/cm2以上のレーザー損傷閾値を有する請求項1〜4のいずれか1項に記載の材料。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/669,141 US7045223B2 (en) | 2003-09-23 | 2003-09-23 | Spinel articles and methods for forming same |
US10/669,141 | 2003-09-23 | ||
US10/802,160 | 2004-03-17 | ||
US10/802,160 US20050061229A1 (en) | 2003-09-23 | 2004-03-17 | Optical spinel articles and methods for forming same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006528093A Division JP2007506640A (ja) | 2003-09-23 | 2004-09-17 | スピネル物品およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011236123A JP2011236123A (ja) | 2011-11-24 |
JP5562905B2 true JP5562905B2 (ja) | 2014-07-30 |
Family
ID=34313662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011128276A Expired - Fee Related JP5562905B2 (ja) | 2003-09-23 | 2011-06-08 | スピネル物品およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7045223B2 (ja) |
JP (1) | JP5562905B2 (ja) |
AT (1) | ATE491828T1 (ja) |
DE (1) | DE602004030592D1 (ja) |
IL (1) | IL174350A0 (ja) |
Families Citing this family (9)
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US7045223B2 (en) * | 2003-09-23 | 2006-05-16 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
US20050061230A1 (en) * | 2003-09-23 | 2005-03-24 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
US7326477B2 (en) * | 2003-09-23 | 2008-02-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel boules, wafers, and methods for fabricating same |
WO2006047127A1 (en) * | 2004-10-21 | 2006-05-04 | Saint-Gobain Ceramics & Plastics, Inc. | Optical lens elements, semiconductor lithographic patterning apparatus, and methods for processing semiconductor devices |
JP4525353B2 (ja) * | 2005-01-07 | 2010-08-18 | 住友電気工業株式会社 | Iii族窒化物基板の製造方法 |
US7919815B1 (en) * | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
US20090137097A1 (en) * | 2007-11-26 | 2009-05-28 | United Microelectronics Corp. | Method for dicing wafer |
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DE102011080378A1 (de) | 2011-08-03 | 2013-02-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Transparente Komposit-Scheibe für Sicherheitsanwendungen |
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-
2003
- 2003-09-23 US US10/669,141 patent/US7045223B2/en not_active Expired - Fee Related
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2004
- 2004-03-17 US US10/802,160 patent/US20050061229A1/en not_active Abandoned
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- 2004-09-17 DE DE602004030592T patent/DE602004030592D1/de active Active
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US7045223B2 (en) | 2006-05-16 |
ATE491828T1 (de) | 2011-01-15 |
US20050061229A1 (en) | 2005-03-24 |
JP2011236123A (ja) | 2011-11-24 |
US20050064246A1 (en) | 2005-03-24 |
IL174350A0 (en) | 2006-08-01 |
DE602004030592D1 (de) | 2011-01-27 |
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