RU2016106926A - Полевой транзистор и способ изготовления полевого транзистора - Google Patents

Полевой транзистор и способ изготовления полевого транзистора Download PDF

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RU2016106926A
RU2016106926A RU2016106926A RU2016106926A RU2016106926A RU 2016106926 A RU2016106926 A RU 2016106926A RU 2016106926 A RU2016106926 A RU 2016106926A RU 2016106926 A RU2016106926 A RU 2016106926A RU 2016106926 A RU2016106926 A RU 2016106926A
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field effect
combination
effect transistor
drain electrode
source electrode
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RU2631405C2 (ru
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Синдзи МАЦУМОТО
Наоюки УЕДА
Юки НАКАМУРА
Микико ТАКАДА
Юдзи СОНЕ
Риоити САОТОМЕ
Саданори АРАЕ
Юкико АБЕ
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Рикох Компани, Лтд
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
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  • Physics & Mathematics (AREA)
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  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Claims (30)

1. Полевой транзистор, содержащий
электрод затвора, предназначенный для приложения напряжения затвора;
электрод истока и электрод стока, оба из которых предназначены для вывода электрического тока;
активный слой, образованный из оксидного полупроводника n-типа, предусмотренный в контакте с электродом истока и электродом стока; и
изолирующий слой затвора, предусмотренный между электродом затвора и активным слоем,
при этом работа выхода электрода истока и электрода стока составляет 4,90 эВ или более, и
при этом концентрация электронов - носителей заряда оксидного полупроводника n-типа составляет 4,0×1017 см-3 или более.
2. Полевой транзистор по п. 1, в котором материалом электрода истока и электрода стока является металл, сплав или и тот, и другой.
3. Полевой транзистор по п. 2, в котором металл, сплав или и тот, и другой содержат золото, серебро, палладий, платину, никель, иридий, родий или любую их комбинацию.
4. Полевой транзистор по любому из пп. 1-3, в котором электрод истока и электрод стока образованы обжигом частиц металла, частиц сплава, металлоорганического соединения или любой их комбинации.
5. Полевой транзистор по п. 4, в котором электрод истока и электрод стока образованы нанесением жидкости для нанесения покрытия, содержащей частицы металла, частицы сплава, металлоорганическое соединение или любую их комбинацию, в капельно-струйной системе и обжигом частиц металла, частиц сплава, металлоорганического соединения или любой их комбинации.
6. Полевой транзистор по п. 1, в котором оксидный полупроводник n-типа содержит индий, цинк, олово, галлий, титан или любую их комбинацию.
7. Полевой транзистор по п. 6, в котором оксидный полупроводник n-типа дополнительно содержит щелочноземельный металл.
8. Способ изготовления полевого транзистора по любому из пп. 1-3, включающий
нанесение жидкости для нанесения покрытия, содержащей частицы металла, частицы сплава, металлоорганическое соединение или любую их комбинацию, по меньшей мере на изолирующий слой затвора и обжиг частиц металла, частиц сплава, металлоорганического соединения или любой их комбинации с образованием электрода истока и электрода стока.
9. Способ изготовления полевого транзистора по любому одному из пп. 1-3, включающий
нанесение жидкости для нанесения покрытия, содержащей частицы металла, частицы сплава, металлоорганическое соединение или любую их комбинацию, по меньшей мере на основу и обжиг частиц металла, частиц сплава, металлоорганического соединения или любой их комбинации с образованием электрода истока и электрода стока.
10. Способ по п. 8, в котором частицы металла, частицы сплава, металлоорганическое соединение или любая их комбинация содержат золото, серебро, палладий, платину, никель, иридий, родий или любую их комбинацию.
11. Элемент отображения, содержащий:
светорегулирующий элемент, предназначенный для управления световым выходом в соответствии с сигналом возбуждения; и
цепь возбуждения, которая содержит полевой транзистор по любому из пп. 1-3 и предназначена для возбуждения светорегулирующего элемента.
12. Элемент отображения по п. 11, в котором светорегулирующий элемент содержит электролюминесцентный элемент или электрохромный элемент.
13. Элемент отображения по п. 11, в котором светорегулирующий элемент содержит жидкокристаллический элемент или электрофоретический элемент.
14. Устройство отображения изображения, которое отображает изображение, соответствующее данным изображения, и которое содержит
множество элементов отображения по п. 11, расположенных в виде матрицы;
множество токопроводящих дорожек, предназначенных для раздельного приложения напряжения затвора к полевым транзисторам в каждом из элементов отображения; и
устройство управления отображением, предназначенное для индивидуального управления напряжением затвора каждого из полевых транзисторов посредством токопроводящих дорожек в соответствии с данными изображения.
15. Система, содержащая
устройство отображения изображения по п. 14; и
устройство генерирования данных изображения, предназначенное для генерирования данных изображения на основе информации об отображаемом изображении и вывода сгенерированных данных изображения в устройство отображения изображения.
RU2016106926A 2013-07-31 2014-07-25 Полевой транзистор и способ изготовления полевого транзистора RU2631405C2 (ru)

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JP2013-159290 2013-07-31
JP2013159290 2013-07-31
JP2014035430A JP6264090B2 (ja) 2013-07-31 2014-02-26 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法
JP2014-035430 2014-02-26
PCT/JP2014/070289 WO2015016333A1 (en) 2013-07-31 2014-07-25 Field-effect transistor and method for producing field-effect transistor

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