PL375580A1 - Monokrystaliczne podłoże luminoforowe, sposób jego wytwarzania oraz azotkowe urządzenie półprzewodnikowe wykorzystujące to podłoże - Google Patents

Monokrystaliczne podłoże luminoforowe, sposób jego wytwarzania oraz azotkowe urządzenie półprzewodnikowe wykorzystujące to podłoże

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Publication number
PL375580A1
PL375580A1 PL02375580A PL37558002A PL375580A1 PL 375580 A1 PL375580 A1 PL 375580A1 PL 02375580 A PL02375580 A PL 02375580A PL 37558002 A PL37558002 A PL 37558002A PL 375580 A1 PL375580 A1 PL 375580A1
Authority
PL
Poland
Prior art keywords
same
element selected
preparing
single crystal
nitride semiconductor
Prior art date
Application number
PL02375580A
Other languages
English (en)
Other versions
PL211013B1 (pl
Inventor
Robert Dwiliński
Roman Doradziński
Jerzy Garczyński
Leszek Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp.Z O.O.
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/147,318 external-priority patent/US6656615B2/en
Application filed by Ammono Sp.Z O.O., Nichia Corporation filed Critical Ammono Sp.Z O.O.
Publication of PL375580A1 publication Critical patent/PL375580A1/pl
Publication of PL211013B1 publication Critical patent/PL211013B1/pl

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)

Abstract

Komponent luminescencyjny, który ma podłoże luminoforowe zawierające co najmniej jeden pierwiastek należący do Grupy 13 (IUPAC 1989), oraz zawierające azotek o wzorze ogólnym XN, w którym X oznacza co najmniej jeden pierwiastek wybrany spośród B, Al, Ga oraz In, azotek o wzorze ogólnym XN:Y, gdzie X oznacza co najmniej jeden pierwiastek wybrany spośród B, Al, Ga oraz In, zaś Y oznacza co najmniej jeden pierwiastek wybrany spośród Be, Mg, Ca, Sr, Ba, Zn, Cd oraz Hg, bądź azotek o wzorze ogólnym XN:Y,Z, gdzie X oznacza co najmniej jeden pierwiastek wybrany spośród B, Al, Ga oraz In, Y oznacza co najmniej jeden pierwiastek wybrany spośród Be, Mg, Ca, Sr, Ba, Zn, Cd oraz Hg, zaś Z oznacza co najmniej jeden pierwiastek wybrany spośród C, Si, Ge, Sn, Pb, O oraz S; a także sposób wytwarzania komponenta luminescencyjnego obejmujący wytworzenie podłoża luminoforowego, z zastosowaniem nadkrytycznego amoniaku oraz uformowanie elementu luminescencyjnego na tym podłożu metodą wzrostu z fazy gazowej. Komponent luminescencyjny według wynalazku ma rozkład widmowy umożliwiający emisję światła białego oraz podobnego i może być wytwarzany z dobrą wydajnością.
PL375580A 2002-05-17 2002-12-13 Monokrystaliczne podłoże luminoforowe, sposób jego wytwarzania oraz azotkowe urządzenie półprzewodnikowe wykorzystujące to podłoże PL211013B1 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/147,318 US6656615B2 (en) 2001-06-06 2002-05-17 Bulk monocrystalline gallium nitride

Publications (2)

Publication Number Publication Date
PL375580A1 true PL375580A1 (pl) 2005-11-28
PL211013B1 PL211013B1 (pl) 2012-03-30

Family

ID=29548308

Family Applications (2)

Application Number Title Priority Date Filing Date
PL375597A PL225427B1 (pl) 2002-05-17 2002-12-11 Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego
PL375580A PL211013B1 (pl) 2002-05-17 2002-12-13 Monokrystaliczne podłoże luminoforowe, sposób jego wytwarzania oraz azotkowe urządzenie półprzewodnikowe wykorzystujące to podłoże

Family Applications Before (1)

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PL375597A PL225427B1 (pl) 2002-05-17 2002-12-11 Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego

Country Status (6)

Country Link
US (1) US7589358B2 (pl)
JP (1) JP4416648B2 (pl)
AU (2) AU2002354467A1 (pl)
PL (2) PL225427B1 (pl)
TW (1) TWI277220B (pl)
WO (2) WO2003098757A1 (pl)

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