NO20022427L - Fremgangsmåter for dannelse av en silisium nanostruktur, en silisium kvantetråd i rekke (array) og innretninger på basis derav - Google Patents

Fremgangsmåter for dannelse av en silisium nanostruktur, en silisium kvantetråd i rekke (array) og innretninger på basis derav

Info

Publication number
NO20022427L
NO20022427L NO20022427A NO20022427A NO20022427L NO 20022427 L NO20022427 L NO 20022427L NO 20022427 A NO20022427 A NO 20022427A NO 20022427 A NO20022427 A NO 20022427A NO 20022427 L NO20022427 L NO 20022427L
Authority
NO
Norway
Prior art keywords
silicon
methods
devices
forming
quantum wire
Prior art date
Application number
NO20022427A
Other languages
English (en)
Norwegian (no)
Other versions
NO20022427D0 (no
Inventor
Valery K Smirnov
Dmitry S Kibalov
Original Assignee
Sceptre Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sceptre Electronics Ltd filed Critical Sceptre Electronics Ltd
Publication of NO20022427D0 publication Critical patent/NO20022427D0/no
Publication of NO20022427L publication Critical patent/NO20022427L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/125—Quantum wire structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mathematical Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
NO20022427A 1999-11-25 2002-05-22 Fremgangsmåter for dannelse av en silisium nanostruktur, en silisium kvantetråd i rekke (array) og innretninger på basis derav NO20022427L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU99124768/28A RU2173003C2 (ru) 1999-11-25 1999-11-25 Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
PCT/IB2000/001397 WO2001039259A1 (fr) 1999-11-25 2000-10-02 Procedes de formation d'une nanostructure en silicium, reseau de fils quantiques en silicium et dispositif a base de ce dernier

Publications (2)

Publication Number Publication Date
NO20022427D0 NO20022427D0 (no) 2002-05-22
NO20022427L true NO20022427L (no) 2002-06-25

Family

ID=20227346

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20022427A NO20022427L (no) 1999-11-25 2002-05-22 Fremgangsmåter for dannelse av en silisium nanostruktur, en silisium kvantetråd i rekke (array) og innretninger på basis derav

Country Status (23)

Country Link
US (1) US6274007B1 (fr)
EP (1) EP1104011A1 (fr)
JP (1) JP2001156050A (fr)
KR (1) KR20020069195A (fr)
CN (1) CN1399791A (fr)
AU (1) AU7547400A (fr)
BG (1) BG106739A (fr)
BR (1) BR0016095A (fr)
CA (1) CA2392307A1 (fr)
CZ (1) CZ20021824A3 (fr)
EE (1) EE200200261A (fr)
HR (1) HRP20020459A2 (fr)
HU (1) HUP0203517A2 (fr)
IL (1) IL149832A0 (fr)
IS (1) IS6393A (fr)
MX (1) MXPA02005281A (fr)
NO (1) NO20022427L (fr)
PL (1) PL355890A1 (fr)
RU (1) RU2173003C2 (fr)
SK (1) SK7442002A3 (fr)
WO (1) WO2001039259A1 (fr)
YU (1) YU38202A (fr)
ZA (1) ZA200204822B (fr)

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Publication number Publication date
YU38202A (sh) 2006-08-17
RU2173003C2 (ru) 2001-08-27
US6274007B1 (en) 2001-08-14
JP2001156050A (ja) 2001-06-08
CZ20021824A3 (cs) 2004-10-13
EE200200261A (et) 2003-08-15
SK7442002A3 (en) 2003-05-02
HRP20020459A2 (en) 2005-10-31
CN1399791A (zh) 2003-02-26
KR20020069195A (ko) 2002-08-29
MXPA02005281A (es) 2006-02-10
IL149832A0 (en) 2002-11-10
NO20022427D0 (no) 2002-05-22
AU7547400A (en) 2001-06-04
IS6393A (is) 2002-05-24
BR0016095A (pt) 2004-03-23
HUP0203517A2 (en) 2003-07-28
CA2392307A1 (fr) 2001-05-31
ZA200204822B (en) 2003-11-26
WO2001039259A1 (fr) 2001-05-31
PL355890A1 (en) 2004-05-31
EP1104011A1 (fr) 2001-05-30
BG106739A (en) 2003-08-29

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