HRP20020459A2 - Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon - Google Patents

Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon

Info

Publication number
HRP20020459A2
HRP20020459A2 HR20020459A HRP20020459A HRP20020459A2 HR P20020459 A2 HRP20020459 A2 HR P20020459A2 HR 20020459 A HR20020459 A HR 20020459A HR P20020459 A HRP20020459 A HR P20020459A HR P20020459 A2 HRP20020459 A2 HR P20020459A2
Authority
HR
Croatia
Prior art keywords
silicon
formation
methods
devices based
wire array
Prior art date
Application number
HR20020459A
Other languages
English (en)
Inventor
K. Smirnov Valery
S. Kibalov Dmitri
Original Assignee
Sceptre Electronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sceptre Electronics Limited filed Critical Sceptre Electronics Limited
Publication of HRP20020459A2 publication Critical patent/HRP20020459A2/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/125—Quantum wire structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
HR20020459A 1999-11-25 2002-05-24 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon HRP20020459A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU99124768/28A RU2173003C2 (ru) 1999-11-25 1999-11-25 Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
PCT/IB2000/001397 WO2001039259A1 (en) 1999-11-25 2000-10-02 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon

Publications (1)

Publication Number Publication Date
HRP20020459A2 true HRP20020459A2 (en) 2005-10-31

Family

ID=20227346

Family Applications (1)

Application Number Title Priority Date Filing Date
HR20020459A HRP20020459A2 (en) 1999-11-25 2002-05-24 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon

Country Status (23)

Country Link
US (1) US6274007B1 (xx)
EP (1) EP1104011A1 (xx)
JP (1) JP2001156050A (xx)
KR (1) KR20020069195A (xx)
CN (1) CN1399791A (xx)
AU (1) AU7547400A (xx)
BG (1) BG106739A (xx)
BR (1) BR0016095A (xx)
CA (1) CA2392307A1 (xx)
CZ (1) CZ20021824A3 (xx)
EE (1) EE200200261A (xx)
HR (1) HRP20020459A2 (xx)
HU (1) HUP0203517A2 (xx)
IL (1) IL149832A0 (xx)
IS (1) IS6393A (xx)
MX (1) MXPA02005281A (xx)
NO (1) NO20022427L (xx)
PL (1) PL355890A1 (xx)
RU (1) RU2173003C2 (xx)
SK (1) SK7442002A3 (xx)
WO (1) WO2001039259A1 (xx)
YU (1) YU38202A (xx)
ZA (1) ZA200204822B (xx)

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RU2141699C1 (ru) 1997-09-30 1999-11-20 Закрытое акционерное общество Центр "Анализ Веществ" Способ формирования твердотельных наноструктур

Also Published As

Publication number Publication date
YU38202A (sh) 2006-08-17
RU2173003C2 (ru) 2001-08-27
US6274007B1 (en) 2001-08-14
JP2001156050A (ja) 2001-06-08
CZ20021824A3 (cs) 2004-10-13
EE200200261A (et) 2003-08-15
SK7442002A3 (en) 2003-05-02
CN1399791A (zh) 2003-02-26
KR20020069195A (ko) 2002-08-29
MXPA02005281A (es) 2006-02-10
IL149832A0 (en) 2002-11-10
NO20022427D0 (no) 2002-05-22
AU7547400A (en) 2001-06-04
IS6393A (is) 2002-05-24
BR0016095A (pt) 2004-03-23
NO20022427L (no) 2002-06-25
HUP0203517A2 (en) 2003-07-28
CA2392307A1 (en) 2001-05-31
ZA200204822B (en) 2003-11-26
WO2001039259A1 (en) 2001-05-31
PL355890A1 (en) 2004-05-31
EP1104011A1 (en) 2001-05-30
BG106739A (en) 2003-08-29

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