DE60002302D1 - Lichtemittierende vorrichtung aus silizium und herstellungsverfahren - Google Patents

Lichtemittierende vorrichtung aus silizium und herstellungsverfahren

Info

Publication number
DE60002302D1
DE60002302D1 DE60002302T DE60002302T DE60002302D1 DE 60002302 D1 DE60002302 D1 DE 60002302D1 DE 60002302 T DE60002302 T DE 60002302T DE 60002302 T DE60002302 T DE 60002302T DE 60002302 D1 DE60002302 D1 DE 60002302D1
Authority
DE
Germany
Prior art keywords
manufacturing
light
silicon device
emitting silicon
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60002302T
Other languages
English (en)
Other versions
DE60002302T2 (de
Inventor
Jean-Louis Pautrat
Helene Ulmer
Noel Magnea
Emmanuel Hadji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE60002302D1 publication Critical patent/DE60002302D1/de
Publication of DE60002302T2 publication Critical patent/DE60002302T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3426—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIVBVI compounds, e.g. PbSSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1628—Solid materials characterised by a semiconducting matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3027—IV compounds
    • H01S5/3031—Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H01S5/3224—Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE60002302T 1999-02-10 2000-02-07 Lichtemittierende vorrichtung aus silizium und herstellungsverfahren Expired - Lifetime DE60002302T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9901560A FR2789496B1 (fr) 1999-02-10 1999-02-10 Dispositif emetteur et guide de lumiere, avec une region active de silicium contenant des centres radiatifs, et procede de fabrication d'un tel dispositif
FR9901560 1999-02-10
PCT/FR2000/000279 WO2000048275A1 (fr) 1999-02-10 2000-02-07 Dispositif emetteur de lumiere, en silicium, procede de fabrication

Publications (2)

Publication Number Publication Date
DE60002302D1 true DE60002302D1 (de) 2003-05-28
DE60002302T2 DE60002302T2 (de) 2004-02-12

Family

ID=9541826

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60002302T Expired - Lifetime DE60002302T2 (de) 1999-02-10 2000-02-07 Lichtemittierende vorrichtung aus silizium und herstellungsverfahren

Country Status (6)

Country Link
US (1) US6570187B1 (de)
EP (1) EP1151507B1 (de)
JP (1) JP2002536850A (de)
DE (1) DE60002302T2 (de)
FR (1) FR2789496B1 (de)
WO (1) WO2000048275A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003531477A (ja) * 2000-03-14 2003-10-21 マサチューセッツ インスティテュート オブ テクノロジー 光学増幅器およびレーザー
AUPR534201A0 (en) * 2001-05-30 2001-06-21 Unisearch Limited High efficiency silicon light emitting device
EP1443130B1 (de) * 2001-11-05 2011-09-28 Japan Science and Technology Agency Homologer einkristalliner dünner film mit natürlichem supergitter, herstellungsverfahren dafür und vorrichtung, bei der der einkristalline dünne film verwendet wird
US6515335B1 (en) * 2002-01-04 2003-02-04 International Business Machines Corporation Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same
KR100576856B1 (ko) * 2003-12-23 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
JP4529646B2 (ja) * 2004-11-09 2010-08-25 ソニー株式会社 希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子
JP4612671B2 (ja) * 2005-02-09 2011-01-12 富士通株式会社 発光デバイス及び半導体装置
JP4386193B2 (ja) * 2005-02-18 2009-12-16 セイコーエプソン株式会社 光素子
JP4956916B2 (ja) * 2005-05-30 2012-06-20 ソニー株式会社 発光素子及び発光装置
US7732237B2 (en) * 2005-06-27 2010-06-08 The Regents Of The University Of California Quantum dot based optoelectronic device and method of making same
JP5003013B2 (ja) * 2006-04-25 2012-08-15 株式会社日立製作所 シリコン発光ダイオード、シリコン光トランジスタ、シリコンレーザー及びそれらの製造方法。
DE102007025092A1 (de) 2007-05-30 2008-12-04 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
JP5117156B2 (ja) 2007-10-05 2013-01-09 株式会社日立製作所 半導体装置
JP5388954B2 (ja) * 2010-06-14 2014-01-15 キヤノン株式会社 発光素子及びその製造方法
GB2493186A (en) * 2011-07-27 2013-01-30 Oclaro Technology Ltd High speed vertical-cavity surface-emitting laser
JP2014192419A (ja) * 2013-03-28 2014-10-06 Toyohashi Univ Of Technology 窒化物半導体発光素子およびその製造方法
US10256362B2 (en) 2016-07-29 2019-04-09 Arizona Board Of Regents On Behalf Of Arizona State University Flexible silicon infrared emitter

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5107538A (en) * 1991-06-06 1992-04-21 At&T Bell Laboratories Optical waveguide system comprising a rare-earth Si-based optical device
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3243303B2 (ja) * 1991-10-28 2002-01-07 ゼロックス・コーポレーション 量子閉じ込め半導体発光素子及びその製造方法
US5249195A (en) * 1992-06-30 1993-09-28 At&T Bell Laboratories Erbium doped optical devices
GB2275820B (en) 1993-02-26 1996-08-28 Hitachi Europ Ltd Optoelectronic device
JPH0846237A (ja) * 1994-07-27 1996-02-16 Nippon Telegr & Teleph Corp <Ntt> シリコン発光ダイオード
US5917195A (en) * 1995-02-17 1999-06-29 B.A. Painter, Iii Phonon resonator and method for its production
US5563979A (en) * 1995-08-31 1996-10-08 Lucent Technologies Inc. Erbium-doped planar optical device

Also Published As

Publication number Publication date
FR2789496A1 (fr) 2000-08-11
JP2002536850A (ja) 2002-10-29
DE60002302T2 (de) 2004-02-12
EP1151507A1 (de) 2001-11-07
US6570187B1 (en) 2003-05-27
EP1151507B1 (de) 2003-04-23
WO2000048275A1 (fr) 2000-08-17
FR2789496B1 (fr) 2002-06-07

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