GB2275820B - Optoelectronic device - Google Patents

Optoelectronic device

Info

Publication number
GB2275820B
GB2275820B GB9303927A GB9303927A GB2275820B GB 2275820 B GB2275820 B GB 2275820B GB 9303927 A GB9303927 A GB 9303927A GB 9303927 A GB9303927 A GB 9303927A GB 2275820 B GB2275820 B GB 2275820B
Authority
GB
United Kingdom
Prior art keywords
optoelectronic device
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9303927A
Other versions
GB2275820A (en
GB9303927D0 (en
Inventor
David A Williams
Bruce Alphenaar
Wei Chen
Haroon Ahmed
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Europe Ltd
Original Assignee
Hitachi Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Europe Ltd filed Critical Hitachi Europe Ltd
Priority to GB9303927A priority Critical patent/GB2275820B/en
Publication of GB9303927D0 publication Critical patent/GB9303927D0/en
Publication of GB2275820A publication Critical patent/GB2275820A/en
Application granted granted Critical
Publication of GB2275820B publication Critical patent/GB2275820B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
GB9303927A 1993-02-26 1993-02-26 Optoelectronic device Expired - Fee Related GB2275820B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9303927A GB2275820B (en) 1993-02-26 1993-02-26 Optoelectronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9303927A GB2275820B (en) 1993-02-26 1993-02-26 Optoelectronic device

Publications (3)

Publication Number Publication Date
GB9303927D0 GB9303927D0 (en) 1993-05-19
GB2275820A GB2275820A (en) 1994-09-07
GB2275820B true GB2275820B (en) 1996-08-28

Family

ID=10731098

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9303927A Expired - Fee Related GB2275820B (en) 1993-02-26 1993-02-26 Optoelectronic device

Country Status (1)

Country Link
GB (1) GB2275820B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2318680B (en) * 1996-10-24 2001-11-07 Univ Surrey Optoelectronic semiconductor devices
GB9724642D0 (en) 1997-11-21 1998-01-21 British Tech Group Single electron devices
FR2789496B1 (en) 1999-02-10 2002-06-07 Commissariat Energie Atomique LIGHT EMITTING DEVICE AND GUIDE, WITH AN ACTIVE SILICON REGION CONTAINING RADIATION CENTERS, AND METHOD FOR MANUFACTURING SUCH A DEVICE
KR100459894B1 (en) * 2002-02-09 2004-12-04 삼성전자주식회사 Silicon photo-detecting device
KR100468846B1 (en) * 2002-03-11 2005-01-29 삼성전자주식회사 Image input/output apparatus
JP2007043006A (en) * 2005-08-05 2007-02-15 Hitachi Maxell Ltd Crystal silicon element, and manufacturing method thereof
WO2007018076A1 (en) * 2005-08-05 2007-02-15 Hitachi Maxell, Ltd. Crystal silicon element and method for fabricating same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765956A (en) * 1965-09-28 1973-10-16 C Li Solid-state device
US4136435A (en) * 1973-10-10 1979-01-30 Li Chou H Method for making solid-state device
US4371406A (en) * 1965-09-28 1983-02-01 Li Chou H Solid-state device
US4690714A (en) * 1979-01-29 1987-09-01 Li Chou H Method of making active solid state devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765956A (en) * 1965-09-28 1973-10-16 C Li Solid-state device
US4371406A (en) * 1965-09-28 1983-02-01 Li Chou H Solid-state device
US4136435A (en) * 1973-10-10 1979-01-30 Li Chou H Method for making solid-state device
US4690714A (en) * 1979-01-29 1987-09-01 Li Chou H Method of making active solid state devices

Also Published As

Publication number Publication date
GB2275820A (en) 1994-09-07
GB9303927D0 (en) 1993-05-19

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050226