NO20003316L - FremgangsmÕte og apparatur for fremstilling av silisium av høy renhet - Google Patents

FremgangsmÕte og apparatur for fremstilling av silisium av høy renhet

Info

Publication number
NO20003316L
NO20003316L NO20003316A NO20003316A NO20003316L NO 20003316 L NO20003316 L NO 20003316L NO 20003316 A NO20003316 A NO 20003316A NO 20003316 A NO20003316 A NO 20003316A NO 20003316 L NO20003316 L NO 20003316L
Authority
NO
Norway
Prior art keywords
high purity
producing high
purity silicon
silicon
producing
Prior art date
Application number
NO20003316A
Other languages
English (en)
Other versions
NO330157B1 (no
NO20003316D0 (no
Inventor
Jiro Kondo
Haruo Shimada
Shinji Tokumaru
Ryuji Watanabe
Atsushi Nogami
Akihito Kiyose
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Publication of NO20003316D0 publication Critical patent/NO20003316D0/no
Publication of NO20003316L publication Critical patent/NO20003316L/no
Publication of NO330157B1 publication Critical patent/NO330157B1/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/02—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0006—Controlling or regulating processes
    • B01J19/0013—Controlling the temperature of the process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J7/00—Apparatus for generating gases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00139—Controlling the temperature using electromagnetic heating
    • B01J2219/00141—Microwaves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00159—Controlling the temperature controlling multiple zones along the direction of flow, e.g. pre-heating and after-cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00164—Controlling or regulating processes controlling the flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00184—Controlling or regulating processes controlling the weight of reactants in the reactor vessel
NO20003316A 1997-12-25 2000-06-23 Fremgangsmate og apparatur for fremstilling av silisium av hoy renhet NO330157B1 (no)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP35765697 1997-12-25
JP7612198 1998-03-24
PCT/JP1998/005968 WO1999033749A1 (fr) 1997-12-25 1998-12-25 PROCEDE DE PREPARATION DE Si EXTREMEMENT PUR, ET EQUIPEMENT POUR LA MISE EN OEUVRE DE CE PROCEDE

Publications (3)

Publication Number Publication Date
NO20003316D0 NO20003316D0 (no) 2000-06-23
NO20003316L true NO20003316L (no) 2000-08-14
NO330157B1 NO330157B1 (no) 2011-02-28

Family

ID=26417274

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20003316A NO330157B1 (no) 1997-12-25 2000-06-23 Fremgangsmate og apparatur for fremstilling av silisium av hoy renhet

Country Status (11)

Country Link
US (1) US6395249B1 (no)
EP (1) EP1057782B1 (no)
JP (1) JP3735253B2 (no)
CN (1) CN1207192C (no)
AU (1) AU738233C (no)
BR (1) BR9814468A (no)
CA (1) CA2316180C (no)
DE (1) DE69828201T2 (no)
ES (1) ES2234170T3 (no)
NO (1) NO330157B1 (no)
WO (1) WO1999033749A1 (no)

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MXPA04012887A (es) * 2002-06-18 2005-03-31 Ciba Sc Holding Ag Estructuras paralelas al plano de silicio/oxido de silicio.
JP4436904B2 (ja) 2002-07-23 2010-03-24 新日鉄マテリアルズ株式会社 Ｓｉ製造方法
NO333319B1 (no) * 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
JP2005206441A (ja) * 2004-01-26 2005-08-04 Nippon Steel Corp 高純度Ｓｉ製造用原材料及びその製造方法
JP2005206440A (ja) * 2004-01-26 2005-08-04 Nippon Steel Corp 高純度シリコン製造方法
JP4672264B2 (ja) * 2004-01-29 2011-04-20 新日鉄マテリアルズ株式会社 ＳｉＯの精製方法及び得られたＳｉＯを用いる高純度シリコンの製造方法
JP2005220002A (ja) * 2004-02-09 2005-08-18 Nippon Steel Corp ＳｉＯの精製装置、かかる精製装置を用いるＳｉＯの精製方法及び得られたＳｉＯを用いる高純度シリコンの製造方法
JP4731818B2 (ja) * 2004-02-10 2011-07-27 新日鉄マテリアルズ株式会社 高純度ＳｉＯ固体の製造方法及び製造装置
JP2005225729A (ja) * 2004-02-13 2005-08-25 Nippon Steel Corp ＳｉＯの精製装置、かかる装置を用いるＳｉＯの精製方法及び高純度シリコンの製造方法
WO2006011290A1 (ja) * 2004-07-29 2006-02-02 Sumitomo Titanium Corporation 二次電池用SiO粉末およびその製造方法
JP4674349B2 (ja) * 2004-10-19 2011-04-20 独立行政法人物質・材料研究機構 結晶性珪素マイクロチューブ及びその製造方法
JP4980603B2 (ja) * 2005-10-19 2012-07-18 株式会社ブリヂストン ケイ素微粒子の製造方法
JP5218934B2 (ja) * 2006-08-31 2013-06-26 三菱マテリアル株式会社 金属シリコンとその製造方法
EP2058279A4 (en) * 2006-08-31 2012-01-25 Mitsubishi Materials Corp METAL SILICON AND METHOD FOR MANUFACTURING THE SAME
DE102006056482B4 (de) * 2006-11-30 2010-07-15 Sunicon Ag Vorrichtung und Verfahren zum Aufbereiten von Nichteisenmetallen
CN101707871B (zh) * 2007-04-25 2013-06-12 卡甘·塞兰 通过大表面积气-固或气-液界面及液相再生沉积高纯硅
JP5311930B2 (ja) * 2007-08-29 2013-10-09 住友化学株式会社 シリコンの製造方法
CN101122047B (zh) * 2007-09-14 2011-02-16 李绍光 一种太阳能电池用多晶硅制造方法
JP5022848B2 (ja) * 2007-09-26 2012-09-12 新日鉄マテリアルズ株式会社 ＳｉＯ粉体の製造方法及び製造装置
US8167981B2 (en) * 2009-04-21 2012-05-01 Spx Corporation Vacuum filter assembly
CN101787562A (zh) * 2010-02-10 2010-07-28 李绍光 一种联体式真空高温歧化反应装置
JP2012041230A (ja) * 2010-08-19 2012-03-01 Bridgestone Corp 珪素微粒子の製造方法
CN102671581B (zh) * 2011-05-11 2014-08-20 储晞 生产颗粒材料的方法和反应器
CN102249243B (zh) * 2011-06-08 2012-12-26 大连理工大学 一种冶金法去除工业硅中杂质硼的方法
CN102323136B (zh) * 2011-08-02 2013-07-10 重庆密奥仪器有限公司 检测高纯硅成分分析用的挥硅实验装置
CN102491335A (zh) * 2011-11-30 2012-06-13 奇瑞汽车股份有限公司 一种纳米硅颗粒的制备方法及含有该纳米硅颗粒的负极材料及锂离子电池
US9114989B2 (en) * 2011-12-07 2015-08-25 Praxair Technology, Inc. Inert gas recovery and recycle for silicon crystal growth pulling process
JP2013129558A (ja) * 2011-12-21 2013-07-04 Bridgestone Corp ケイ素微粒子の製造方法及び製造装置
CN102583387B (zh) * 2012-02-03 2014-04-02 厦门大学 一种采用二次合金法提纯多晶硅的方法
CN102530949A (zh) * 2012-03-02 2012-07-04 李绍光 一种电磁悬浮液固分离方法和装置
WO2014157154A1 (ja) * 2013-03-29 2014-10-02 信越化学工業株式会社 酸化珪素の製造装置及び製造方法
CN103626184B (zh) * 2013-07-31 2016-02-24 浙江精功新材料技术有限公司 一种高纯液体多晶硅的制备方法
CN103395836B (zh) * 2013-08-15 2015-01-07 蚌埠中恒新材料科技有限责任公司 用电弧炉熔制锆英砂时生成一氧化硅的收集装置
WO2019079879A1 (en) * 2017-10-27 2019-05-02 Kevin Allan Dooley Inc. SYSTEM AND METHOD FOR PRODUCING HIGH-PURITY SILICON
CN109796017A (zh) * 2019-04-03 2019-05-24 昆明理工大学 一种高纯纳米一氧化硅的制备方法
CA3151461A1 (en) 2019-05-20 2020-11-26 Joshua J. LAU Anode active material including low-defect turbostratic carbon
CN111056556A (zh) * 2019-12-26 2020-04-24 黄冈师范学院 一种以二氧化硅和氢气为原料制备多晶硅的方法
CN113213483B (zh) * 2021-04-14 2022-07-19 三峡大学 一种用于锂离子电池负极材料的非晶硅粉制备方法
CN113501527B (zh) * 2021-09-06 2021-11-16 北京壹金新能源科技有限公司 一种制备一氧化硅的方法
CN115196642B (zh) * 2022-07-04 2023-09-26 柯瑞林 一种二氧化硅的提纯方法

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Also Published As

Publication number Publication date
AU738233C (en) 2002-10-24
AU738233B2 (en) 2001-09-13
CA2316180A1 (en) 1999-07-08
DE69828201T2 (de) 2005-12-15
AU1691199A (en) 1999-07-19
WO1999033749A1 (fr) 1999-07-08
BR9814468A (pt) 2000-10-10
EP1057782B1 (en) 2004-12-15
NO330157B1 (no) 2011-02-28
CA2316180C (en) 2004-04-20
JP3735253B2 (ja) 2006-01-18
CN1207192C (zh) 2005-06-22
ES2234170T3 (es) 2005-06-16
EP1057782A1 (en) 2000-12-06
CN1284046A (zh) 2001-02-14
DE69828201D1 (de) 2005-01-20
NO20003316D0 (no) 2000-06-23
EP1057782A4 (en) 2004-03-24
US6395249B1 (en) 2002-05-28

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