BR9814468A - Processo e aparelho de produção para silìcio de alta pureza - Google Patents

Processo e aparelho de produção para silìcio de alta pureza

Info

Publication number
BR9814468A
BR9814468A BR9814468-5A BR9814468A BR9814468A BR 9814468 A BR9814468 A BR 9814468A BR 9814468 A BR9814468 A BR 9814468A BR 9814468 A BR9814468 A BR 9814468A
Authority
BR
Brazil
Prior art keywords
sio
solid
high purity
purity silicon
production process
Prior art date
Application number
BR9814468-5A
Other languages
English (en)
Inventor
Jiro Kondo
Haruo Shimada
Shinji Tokumaru
Ryuji Watanabe
Atsushi Nogami
Akihito Iyose
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Publication of BR9814468A publication Critical patent/BR9814468A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/02—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0006—Controlling or regulating processes
    • B01J19/0013—Controlling the temperature of the process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J7/00—Apparatus for generating gases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00139—Controlling the temperature using electromagnetic heating
    • B01J2219/00141—Microwaves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00159—Controlling the temperature controlling multiple zones along the direction of flow, e.g. pre-heating and after-cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00164—Controlling or regulating processes controlling the flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00184—Controlling or regulating processes controlling the weight of reactants in the reactor vessel

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)

Abstract

Patente de Invenção: <B>"PROCESSO E APARELHO DE PRODUçãO PARA SILìCIO DE ALTA PUREZA"<D>. é possível produzir Si de alta pureza pelo aquecimento de SiO sólido em uma temperatura de pelo menos 1000°C e menor do que 1730°C, para uma reação de desproporcionalidade na qual o SiO sólido é decomposto para Si líquido ou sólido e SiO~ 2~ sólido, e o Si produzido é separado do SiO~ 2~ e/ou SiO. O SiO sólido pode ser obtido por um processo pelo qual uma mistura de partida de carbono C, silício Si ou ferrosilício, ou uma combinação dos mesmos, com SiO~ 2~ é aquecida para gerar gás contendo SiO gasoso, e o gás contendo SiO é esfriado para produzir SiO sólido.
BR9814468-5A 1997-12-25 1998-12-25 Processo e aparelho de produção para silìcio de alta pureza BR9814468A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP35765697 1997-12-25
JP7612198 1998-03-24
PCT/JP1998/005968 WO1999033749A1 (fr) 1997-12-25 1998-12-25 PROCEDE DE PREPARATION DE Si EXTREMEMENT PUR, ET EQUIPEMENT POUR LA MISE EN OEUVRE DE CE PROCEDE

Publications (1)

Publication Number Publication Date
BR9814468A true BR9814468A (pt) 2000-10-10

Family

ID=26417274

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9814468-5A BR9814468A (pt) 1997-12-25 1998-12-25 Processo e aparelho de produção para silìcio de alta pureza

Country Status (11)

Country Link
US (1) US6395249B1 (pt)
EP (1) EP1057782B1 (pt)
JP (1) JP3735253B2 (pt)
CN (1) CN1207192C (pt)
AU (1) AU738233C (pt)
BR (1) BR9814468A (pt)
CA (1) CA2316180C (pt)
DE (1) DE69828201T2 (pt)
ES (1) ES2234170T3 (pt)
NO (1) NO330157B1 (pt)
WO (1) WO1999033749A1 (pt)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7273522B2 (en) * 2002-06-18 2007-09-25 Ciba Specialty Chemicals Corporation Plane-parallel structures of silicon/silicon oxide
JP4436904B2 (ja) 2002-07-23 2010-03-24 新日鉄マテリアルズ株式会社 Ｓｉ製造方法
NO333319B1 (no) * 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
JP2005206440A (ja) * 2004-01-26 2005-08-04 Nippon Steel Corp 高純度シリコン製造方法
JP2005206441A (ja) * 2004-01-26 2005-08-04 Nippon Steel Corp 高純度Ｓｉ製造用原材料及びその製造方法
JP4672264B2 (ja) * 2004-01-29 2011-04-20 新日鉄マテリアルズ株式会社 ＳｉＯの精製方法及び得られたＳｉＯを用いる高純度シリコンの製造方法
JP2005220002A (ja) * 2004-02-09 2005-08-18 Nippon Steel Corp ＳｉＯの精製装置、かかる精製装置を用いるＳｉＯの精製方法及び得られたＳｉＯを用いる高純度シリコンの製造方法
JP4731818B2 (ja) * 2004-02-10 2011-07-27 新日鉄マテリアルズ株式会社 高純度ＳｉＯ固体の製造方法及び製造装置
JP2005225729A (ja) * 2004-02-13 2005-08-25 Nippon Steel Corp ＳｉＯの精製装置、かかる装置を用いるＳｉＯの精製方法及び高純度シリコンの製造方法
US20080135801A1 (en) * 2004-07-29 2008-06-12 Shingo Kizaki Silicon Monoxide Powder For Secondary Battery and Method For Producing the Same
JP4674349B2 (ja) * 2004-10-19 2011-04-20 独立行政法人物質・材料研究機構 結晶性珪素マイクロチューブ及びその製造方法
JP4980603B2 (ja) * 2005-10-19 2012-07-18 株式会社ブリヂストン ケイ素微粒子の製造方法
JP5218934B2 (ja) * 2006-08-31 2013-06-26 三菱マテリアル株式会社 金属シリコンとその製造方法
KR101074304B1 (ko) * 2006-08-31 2011-10-17 미쓰비시마테리알덴시카세이가부시키가이샤 금속 실리콘과 그 제조 방법
DE102006056482B4 (de) * 2006-11-30 2010-07-15 Sunicon Ag Vorrichtung und Verfahren zum Aufbereiten von Nichteisenmetallen
EP2150491A4 (en) * 2007-04-25 2011-11-30 Kagan Ceran HIGH-PURITY SILICON DEPOSITION BY GAS-SOLID OR GAS-LIQUID INTERFACES WITH HIGH SPECIFIC AREA AND LIQUID RECOVERY
JP5311930B2 (ja) * 2007-08-29 2013-10-09 住友化学株式会社 シリコンの製造方法
CN101122047B (zh) * 2007-09-14 2011-02-16 李绍光 一种太阳能电池用多晶硅制造方法
JP5022848B2 (ja) * 2007-09-26 2012-09-12 新日鉄マテリアルズ株式会社 ＳｉＯ粉体の製造方法及び製造装置
US8167981B2 (en) * 2009-04-21 2012-05-01 Spx Corporation Vacuum filter assembly
CN101787562A (zh) * 2010-02-10 2010-07-28 李绍光 一种联体式真空高温歧化反应装置
JP2012041230A (ja) * 2010-08-19 2012-03-01 Bridgestone Corp 珪素微粒子の製造方法
CN102671584B (zh) * 2011-05-11 2015-02-04 储晞 制备颗粒材料的反应器和方法
CN102249243B (zh) * 2011-06-08 2012-12-26 大连理工大学 一种冶金法去除工业硅中杂质硼的方法
CN102323136B (zh) * 2011-08-02 2013-07-10 重庆密奥仪器有限公司 检测高纯硅成分分析用的挥硅实验装置
CN102491335A (zh) * 2011-11-30 2012-06-13 奇瑞汽车股份有限公司 一种纳米硅颗粒的制备方法及含有该纳米硅颗粒的负极材料及锂离子电池
CN104080957B (zh) * 2011-12-07 2017-05-17 普莱克斯技术有限公司 用于硅晶体生长拉制方法的惰性气体回收和再循环
JP2013129558A (ja) * 2011-12-21 2013-07-04 Bridgestone Corp ケイ素微粒子の製造方法及び製造装置
CN102583387B (zh) * 2012-02-03 2014-04-02 厦门大学 一种采用二次合金法提纯多晶硅的方法
CN102530949A (zh) * 2012-03-02 2012-07-04 李绍光 一种电磁悬浮液固分离方法和装置
WO2014157154A1 (ja) * 2013-03-29 2014-10-02 信越化学工業株式会社 酸化珪素の製造装置及び製造方法
CN103626184B (zh) * 2013-07-31 2016-02-24 浙江精功新材料技术有限公司 一种高纯液体多晶硅的制备方法
CN103395836B (zh) * 2013-08-15 2015-01-07 蚌埠中恒新材料科技有限责任公司 用电弧炉熔制锆英砂时生成一氧化硅的收集装置
US11434138B2 (en) 2017-10-27 2022-09-06 Kevin Allan Dooley Inc. System and method for manufacturing high purity silicon
CN109796017A (zh) * 2019-04-03 2019-05-24 昆明理工大学 一种高纯纳米一氧化硅的制备方法
WO2020236727A1 (en) 2019-05-20 2020-11-26 Nanograf Corporation Anode active material including low-defect turbostratic carbon
CN111056556A (zh) * 2019-12-26 2020-04-24 黄冈师范学院 一种以二氧化硅和氢气为原料制备多晶硅的方法
CN113213483B (zh) * 2021-04-14 2022-07-19 三峡大学 一种用于锂离子电池负极材料的非晶硅粉制备方法
CN113501527B (zh) * 2021-09-06 2021-11-16 北京壹金新能源科技有限公司 一种制备一氧化硅的方法
US20230102190A1 (en) * 2021-09-29 2023-03-30 GM Global Technology Operations LLC Negative electroactive materials and methods of forming the same
CN115196642B (zh) * 2022-07-04 2023-09-26 柯瑞林 一种二氧化硅的提纯方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US875285A (en) 1905-06-10 1907-12-31 Geo Westinghouse Method of making silicon.
NL106444C (pt) * 1953-03-19
US3010797A (en) 1957-07-26 1961-11-28 Robert S Aries High purity elemental silicon
BE759122A (fr) * 1969-11-19 1971-05-18 Union Carbide Corp Procede et charge de production de silicium au four a arc electrique par reduction carbothermique de silice
JPS531762B2 (pt) 1973-01-13 1978-01-21
JPS5950601B2 (ja) 1982-07-05 1984-12-10 文雄 堀 アモルフアス状ＳｉＯの超微粉とその製造方法ならびに製造装置
JPS6227313A (ja) 1985-07-26 1987-02-05 Nippon Kasei Kk スルフアミドの精製方法
JPS6227318A (ja) * 1985-07-29 1987-02-05 Kawasaki Steel Corp Ｓｉｏ微粉末の製造方法およびその装置
JPH0694365B2 (ja) 1985-11-22 1994-11-24 日本電信電話株式会社 ケイ素の製造方法および製造装置
US4981668A (en) * 1986-04-29 1991-01-01 Dow Corning Corporation Silicon carbide as a raw material for silicon production
US4702902A (en) * 1986-04-29 1987-10-27 Dow Corning Corporation Handling of by-product gases from a silicon furnace
JPS6379717A (ja) * 1986-09-24 1988-04-09 Kawasaki Steel Corp 金属珪素の製造方法およびその装置
JPS63103815A (ja) 1986-10-17 1988-05-09 Kawasaki Steel Corp ＳｉＯ微粉末等の連続製造装置
JPS63103814A (ja) 1986-10-17 1988-05-09 Kawasaki Steel Corp ＳｉＯ微粉末の製造装置
US5009703A (en) * 1990-08-13 1991-04-23 Dow Corning Corporation Silicon smelting process in direct current furnace
JP3263104B2 (ja) * 1991-11-27 2002-03-04 川崎製鉄株式会社 金属シリコンの精製方法
JPH05171412A (ja) 1991-12-18 1993-07-09 Mitsubishi Heavy Ind Ltd 一酸化ケイ素蒸着用材料の製造方法
JPH0717704A (ja) * 1993-06-24 1995-01-20 Kawasaki Steel Corp 電子ビーム溶解によるシリコンの精錬方法

Also Published As

Publication number Publication date
CN1284046A (zh) 2001-02-14
CA2316180C (en) 2004-04-20
DE69828201T2 (de) 2005-12-15
EP1057782B1 (en) 2004-12-15
NO20003316L (no) 2000-08-14
NO20003316D0 (no) 2000-06-23
US6395249B1 (en) 2002-05-28
AU738233B2 (en) 2001-09-13
AU738233C (en) 2002-10-24
CA2316180A1 (en) 1999-07-08
EP1057782A1 (en) 2000-12-06
NO330157B1 (no) 2011-02-28
CN1207192C (zh) 2005-06-22
AU1691199A (en) 1999-07-19
WO1999033749A1 (fr) 1999-07-08
EP1057782A4 (en) 2004-03-24
DE69828201D1 (de) 2005-01-20
JP3735253B2 (ja) 2006-01-18
ES2234170T3 (es) 2005-06-16

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Legal Events

Date Code Title Description
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 25/12/1998, OBSERVADAS AS CONDICOES LEGAIS.

B25D Requested change of name of applicant approved

Owner name: NIPPON STEEL AND SUMITOMO METAL CORPORATION (JP)

B21F Lapse acc. art. 78, item iv - on non-payment of the annual fees in time

Free format text: REFERENTE A 16A ANUIDADE.

B24J Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12)

Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2286 DE 29-10-2014 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.