NL1004032C2 - Nieuwe N-vinyllactam derivaten en polymeren daarvan. - Google Patents

Nieuwe N-vinyllactam derivaten en polymeren daarvan. Download PDF

Info

Publication number
NL1004032C2
NL1004032C2 NL1004032A NL1004032A NL1004032C2 NL 1004032 C2 NL1004032 C2 NL 1004032C2 NL 1004032 A NL1004032 A NL 1004032A NL 1004032 A NL1004032 A NL 1004032A NL 1004032 C2 NL1004032 C2 NL 1004032C2
Authority
NL
Netherlands
Prior art keywords
group containing
carbon atoms
vinyl
aryl group
alkyl group
Prior art date
Application number
NL1004032A
Other languages
English (en)
Dutch (nl)
Other versions
NL1004032A1 (nl
Inventor
Min Ho Jung
Jin Baek Kim
Kyeong Ho Chang
Original Assignee
Hyundai Electronics Ind
Korea Advanced Inst Sci & Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind, Korea Advanced Inst Sci & Tech filed Critical Hyundai Electronics Ind
Publication of NL1004032A1 publication Critical patent/NL1004032A1/xx
Application granted granted Critical
Publication of NL1004032C2 publication Critical patent/NL1004032C2/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D207/18—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member
    • C07D207/22—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D207/24—Oxygen or sulfur atoms
    • C07D207/26—2-Pyrrolidones
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D207/18—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member
    • C07D207/22—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D207/24—Oxygen or sulfur atoms
    • C07D207/26—2-Pyrrolidones
    • C07D207/273—2-Pyrrolidones with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to other ring carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D207/18—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member
    • C07D207/22—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D207/24—Oxygen or sulfur atoms
    • C07D207/26—2-Pyrrolidones
    • C07D207/273—2-Pyrrolidones with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to other ring carbon atoms
    • C07D207/277—Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D223/00—Heterocyclic compounds containing seven-membered rings having one nitrogen atom as the only ring hetero atom
    • C07D223/02—Heterocyclic compounds containing seven-membered rings having one nitrogen atom as the only ring hetero atom not condensed with other rings
    • C07D223/06—Heterocyclic compounds containing seven-membered rings having one nitrogen atom as the only ring hetero atom not condensed with other rings with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D223/08—Oxygen atoms
    • C07D223/10—Oxygen atoms attached in position 2
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
    • C07D405/02—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
    • C07D405/12—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings linked by a chain containing hetero atoms as chain links
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F26/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F26/06—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F26/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F26/06—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
    • C08F26/10—N-Vinyl-pyrrolidone
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Pyrrole Compounds (AREA)
  • Other In-Based Heterocyclic Compounds (AREA)
  • Hydrogenated Pyridines (AREA)
NL1004032A 1995-09-14 1996-09-13 Nieuwe N-vinyllactam derivaten en polymeren daarvan. NL1004032C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19950030063 1995-09-14
KR1019950030063A KR0178475B1 (ko) 1995-09-14 1995-09-14 신규한 n-비닐락탐 유도체 및 그의 중합체

Publications (2)

Publication Number Publication Date
NL1004032A1 NL1004032A1 (nl) 1997-03-20
NL1004032C2 true NL1004032C2 (nl) 1997-05-21

Family

ID=19426831

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1004032A NL1004032C2 (nl) 1995-09-14 1996-09-13 Nieuwe N-vinyllactam derivaten en polymeren daarvan.

Country Status (9)

Country Link
US (2) US5750680A (zh)
JP (1) JP2929526B2 (zh)
KR (1) KR0178475B1 (zh)
CN (1) CN1152859C (zh)
DE (1) DE19637425B4 (zh)
FR (1) FR2738820B1 (zh)
GB (1) GB2305175B (zh)
NL (1) NL1004032C2 (zh)
TW (1) TW434460B (zh)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100197673B1 (en) * 1996-12-20 1999-06-15 Hyundai Electronics Ind Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom
US6124074A (en) * 1999-03-11 2000-09-26 International Business Machines Corporation Photoresist compositions with cyclic olefin polymers and hydrophobic non-steroidal multi-alicyclic additives
US6251560B1 (en) 2000-05-05 2001-06-26 International Business Machines Corporation Photoresist compositions with cyclic olefin polymers having lactone moiety
US6627391B1 (en) 2000-08-16 2003-09-30 International Business Machines Corporation Resist compositions containing lactone additives
US7138218B2 (en) * 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
US6756180B2 (en) * 2002-10-22 2004-06-29 International Business Machines Corporation Cyclic olefin-based resist compositions having improved image stability
DE10259815A1 (de) * 2002-12-19 2004-07-01 Basf Ag Polymere enthaltend Pyrrolidon-4-carbonsäuregruppen und deren Verwendung
US8119392B2 (en) * 2003-05-02 2012-02-21 The University Of North Carolina At Charlotte Biocompatible resists
US7338742B2 (en) * 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7270937B2 (en) * 2003-10-17 2007-09-18 Hynix Semiconductor Inc. Over-coating composition for photoresist and process for forming photoresist pattern using the same
KR100680405B1 (ko) * 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
JP4758679B2 (ja) * 2005-05-18 2011-08-31 パナソニック株式会社 レジスト材料及びそれを用いたパターン形成方法
US7745339B2 (en) * 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
KR100694412B1 (ko) * 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
US8313876B2 (en) * 2006-07-20 2012-11-20 Hynix Semiconductor Inc. Exposure mask and method for manufacturing semiconductor device using the same
KR100849800B1 (ko) * 2006-07-20 2008-07-31 주식회사 하이닉스반도체 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법
KR100861173B1 (ko) * 2006-12-01 2008-09-30 주식회사 하이닉스반도체 액침 노광 공정을 이용한 반도체 소자의 패턴 형성 방법
KR20080057562A (ko) * 2006-12-20 2008-06-25 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
KR100876816B1 (ko) * 2007-06-29 2009-01-07 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
KR100919564B1 (ko) * 2007-06-29 2009-10-01 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
WO2009152276A2 (en) * 2008-06-10 2009-12-17 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
KR101037528B1 (ko) 2008-10-16 2011-05-26 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
JP6182864B2 (ja) * 2012-01-17 2017-08-23 住友化学株式会社 レジストパターンの製造方法
JP6283477B2 (ja) * 2012-06-25 2018-02-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ アミド成分を含むフォトレジスト
MX2020003821A (es) 2017-10-10 2023-01-12 Biogen Inc Proceso de elaboración de espiroderivados.
CN108517219A (zh) * 2018-06-28 2018-09-11 深圳市华星光电技术有限公司 一种液晶材料、显示面板的制备方法、显示装置
CN113835296A (zh) * 2021-09-28 2021-12-24 之江实验室 一种飞秒激光直写光刻胶组合物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0528203A1 (de) * 1991-08-09 1993-02-24 Hoechst Aktiengesellschaft Strahlungsempfindliches Gemisch mit einem polymeren Bindemittel mit Einheiten aus alpha,beta-ungesättigten Carbonsäureamiden
EP0530469A1 (de) * 1991-07-19 1993-03-10 Hoechst Aktiengesellschaft Verfahren zur Herstellung von tert.-Butoxycarbonyl-Gruppen tragenden organischen Verbindungen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
JPS5280022A (en) * 1975-12-26 1977-07-05 Fuji Photo Film Co Ltd Light solubilizable composition
NL8101200A (nl) * 1981-03-12 1982-10-01 Philips Nv Werkwijze voor het aanbrengen van een resistmateriaal op een drager en resist-materiaal.
JPS58174944A (ja) * 1982-04-07 1983-10-14 Toshiba Corp パタ−ン形成法
JPH04363309A (ja) * 1991-06-11 1992-12-16 Brother Ind Ltd 光硬化型組成物
JPH06118630A (ja) * 1992-10-06 1994-04-28 Tokyo Ohka Kogyo Co Ltd 化学増幅型レジスト用塗布液組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0530469A1 (de) * 1991-07-19 1993-03-10 Hoechst Aktiengesellschaft Verfahren zur Herstellung von tert.-Butoxycarbonyl-Gruppen tragenden organischen Verbindungen
EP0528203A1 (de) * 1991-08-09 1993-02-24 Hoechst Aktiengesellschaft Strahlungsempfindliches Gemisch mit einem polymeren Bindemittel mit Einheiten aus alpha,beta-ungesättigten Carbonsäureamiden

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHEMICAL ABSTRACTS, vol. 56, no. 4, 19 February 1962, Columbus, Ohio, US; abstract no. 3631e, page 362; XP002025215 *
GEORG, GUNDA I. ET AL: "N-Vinyl and N-unsubstituted.beta.-lactams from 1-substituted 2-aza-1,3-butadienes", TETRAHEDRON LETT. (1990), 31(4), 451-4 CODEN: TELEAY;ISSN: 0040-4039, 1990, XP000644512 *
GEORG, GUNDA I. ET AL: "Stereocontrolled synthesis of N-vinyl-, N-(1'-propenyl)-, and N-unsubstituted-.beta.-lactams from 2-aza-1,3-butadienes via the Staudinger reaction", J. ORG. CHEM. (1993), 58(21), 5771-8 CODEN: JOCEAH;ISSN: 0022-3263, 1993, XP000644516 *
KOGYO KAGAKU ZASSHI, vol. 63, 1960, pages 367 - 8 *

Also Published As

Publication number Publication date
GB2305175B (en) 1999-10-27
NL1004032A1 (nl) 1997-03-20
CN1153775A (zh) 1997-07-09
US5955606A (en) 1999-09-21
GB9619234D0 (en) 1996-10-23
JP2929526B2 (ja) 1999-08-03
GB2305175A (en) 1997-04-02
TW434460B (en) 2001-05-16
JPH09216867A (ja) 1997-08-19
FR2738820B1 (fr) 1998-09-11
KR0178475B1 (ko) 1999-03-20
FR2738820A1 (fr) 1997-03-21
US5750680A (en) 1998-05-12
DE19637425B4 (de) 2006-04-13
CN1152859C (zh) 2004-06-09
DE19637425A1 (de) 1997-04-03
KR970015572A (ko) 1997-04-28

Similar Documents

Publication Publication Date Title
NL1004032C2 (nl) Nieuwe N-vinyllactam derivaten en polymeren daarvan.
NL1005689C2 (nl) Copolymeren die N-vinyllactamderivaten bevatten, methoden ter bereiding daarvan en daarvan gemaakte fotoresistmaterialen.
US8158327B2 (en) Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition
KR0163785B1 (ko) 화학적으로 증폭된 내식막 물질
KR101157671B1 (ko) 화학 증폭형 포지티브 레지스트 조성물, 할로에스테르 유도체 및 그의 제조방법
KR101101664B1 (ko) 화학 증폭형 포지티브 레지스트 조성물 및 이의 수지
US6235447B1 (en) Photoresist monomers, polymers thereof, and photoresist compositions containing the same
KR19990057361A (ko) 공중합체 수지와 이의 제조방법 및 이 수지를 이용한 포토레지스트
JPH09221526A (ja) 高分子化合物、それを用いた感光性樹脂組成物およびパターン形成方法
GB2320718A (en) Bicycloalkene photoresist copolymers
KR100243712B1 (ko) 파장 248 나노미터 미만의 노출광에 대한 투명도와 감도가 높은화학증폭 레지스트 및 마스크 형성 방법
KR100587756B1 (ko) 레지스트 조성물
JPH09221519A (ja) 酸誘導体化合物、高分子化合物、それを用いた感光性樹脂組成物およびパターン形成方法
KR100362937B1 (ko) 신규의포토레지스트가교제,이를포함하는포토레지스트중합체및포토레지스트조성물
KR100254472B1 (ko) 신규한 말레이미드계 또는 지방족 환형 올레핀계 단량체와 이들 단량체들의 공중합체수지 및 이수지를 이용한 포토레지스트
KR100354871B1 (ko) 공중합체수지와그제조방법및이수지를이용한포토레지스트
KR100313150B1 (ko) 리소콜릴에시딜(메타)아크릴레이트 단량체와 그를 도입한 공중합체 수지 및 이 수지를 이용한 포토레지스트
KR20000015014A (ko) 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
KR100362938B1 (ko) 신규의포토레지스트가교제,이를포함하는포토레지스트중합체및포토레지스트조성물
KR100647379B1 (ko) 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100281902B1 (ko) 백본이 환상 구조를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물
KR20020096666A (ko) 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체
KR20030053469A (ko) 레지스트용수지, 화학증폭형레지스트 및 그것을 이용한 패턴형성방법
KR101455619B1 (ko) 화학 증폭형 포지티브 레지스트 조성물
KR100520167B1 (ko) 신규한 포토레지스트 단량체, 그의 중합체 및 이를 함유한포토레지스트 조성물

Legal Events

Date Code Title Description
AD1B A search report has been drawn up
PD2B A search report has been drawn up
V1 Lapsed because of non-payment of the annual fee

Effective date: 20100401