KR970015572A - 신규한 n-비닐락탐 유도체 및 그의 중합체 - Google Patents
신규한 n-비닐락탐 유도체 및 그의 중합체 Download PDFInfo
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- KR970015572A KR970015572A KR1019950030063A KR19950030063A KR970015572A KR 970015572 A KR970015572 A KR 970015572A KR 1019950030063 A KR1019950030063 A KR 1019950030063A KR 19950030063 A KR19950030063 A KR 19950030063A KR 970015572 A KR970015572 A KR 970015572A
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- C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D207/18—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member
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- C07D207/18—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member
- C07D207/22—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D207/24—Oxygen or sulfur atoms
- C07D207/26—2-Pyrrolidones
- C07D207/273—2-Pyrrolidones with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to other ring carbon atoms
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- C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D207/18—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member
- C07D207/22—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D207/24—Oxygen or sulfur atoms
- C07D207/26—2-Pyrrolidones
- C07D207/273—2-Pyrrolidones with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to other ring carbon atoms
- C07D207/277—Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
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- C07D223/06—Heterocyclic compounds containing seven-membered rings having one nitrogen atom as the only ring hetero atom not condensed with other rings with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
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- C07D405/02—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
- C07D405/12—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings linked by a chain containing hetero atoms as chain links
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- C08F26/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
- C08F26/06—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F26/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
- C08F26/06—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
- C08F26/10—N-Vinyl-pyrrolidone
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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Abstract
본 발명은 비닐락탐의 3위치에 여러 종류의 보호기를 도입한 하기 일반식(Ⅰ)로 표시되는 신규한 N-비닐락탐 유도체, 그의 중합체 및 이들 중합체의 포토레지스트로서의 용도에 관한 것이다. 본 발명의 중합체는 초미세가공(microlithography)에서 원자외선 노광에 적합한 고감도, 고해상성의 화상을 형성할 수 있는 포토레지스트 재료로 사용될 수 있다. 또한 본 발명에 의해 제조된 포토레지스트는 초미세회로의 형성이 가능할 뿐만 아니라, 패턴형성의 공정도 획기적으로 개선할 수 있다.
상기 식에거, R1은 수소, 탄소수 1 내지 10개의 알킬기, 탄소수 6 내지 12개의 아릴기 또는 탄소수 3 내지 9개의 트리알킬실릴기이고; R2는 -OR′, -SO3R′, -CO2R′, -PO3R′, -SO2R′ 또는 -PO2R′(R′는 탄소수 1 내지 10개의 알킬기; 시클로알킬기; N, O, P, S의 헤테로원자를 포함한 시클로기; 또는, 탄소수 6 내지 12개의 아릴기)이며; R3는 수소, 탄소수 1 내지 10개의 알킬기, 탄소수 6 내지 12개의 아릴기, 탄소수 3 내지 9개의 트리알킬실릴기 또는 R2와 동일한 기이고; R4및 R5는 -OH, -OR(R은 탄소수 1 내지 10개의 알킬기 또는 탄소수 6 내지 12개의 아릴기) 또는 R1과 동일한 기이며, 및, m은 0 내지 10의 정수이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (5)
- 하기 일반식(Ⅰ)로 표시되는 N-비닐락탐 유도체;상기 식에서, R1은 수소, 탄소수 1 내지 10개의 알킬기, 탄소수 6 내지 12개의 아릴기 또는 탄소수 3 내지 9개의 트리알킬실릴기이고; R2는 -OR′, -SO3R′, -CO2R′, -PO3R′, -SO2R′ 또는 -PO2R′(R′는 탄소수 1 내지 10개의 알킬기; 시클로알킬기; N, O, P, S의 헤테로원자를 포함한 시클로기; 또는, 탄소수 6 내지 12개의 아릴기)이며; R3는 수소, 탄소수 1 내지 10개의 알킬기, 탄소수 6 내지 12개의 아릴기, 탄소수 3 내지 9개의 트리알킬실릴기 또는 R2와 동일한 기이고; R4및 R5는 -OH, -OR(R은 탄소수 1 내지 10개의 알킬기 또는 탄소수 6 내지 12개의 아릴기) 또는 R1과 동일한 기이며, 및, m은 0 내지 10의 정수이다.
- 하기 일반식(Ⅱ)로 표시되는, 제1항의 N-비닐락탐 유도체(Ⅰ)의 단독중합체 또는 공중합체;상기 식에서, R1은 수소, 탄소수 1 내지 10개의 알킬기, 탄소수 6 내지 12개의 아릴기 또는 탄소수 3 내지 9개의 트리알킬실릴기이고; R2는 -OR′, -SO3R′, -CO2R′, -PO3R′, -SO2R′ 또는 -PO2R′(R′는 탄소수 1 내지 10개의 알킬기; 시클로알킬기; N, O, P, S의 헤테로원자를 포함한 시클로기; 또는, 탄소수 6 내지 12개의 아릴기)이며; R3는 수소, 탄소수 1 내지 10개의 알킬기, 탄소수 6 내지 12개의 아릴기, 탄소수 3 내지 9개의 트리알킬실릴기 또는 R2와 동일한 기이고; R4및 R5는 -OH, -OR(R은 탄소수 1 내지 10개의 알킬기 또는 탄소수 6 내지 12개의 아릴기) 또는 R1과 동일한 기이며, 및, m은 0 내지 10의 정수이고; 및 n은 10 내지 10000의 정수이다.
- 하기 일반식(Ⅲ)로 표시되는, 제1항의 N-비닐락탐 유도체(Ⅰ)와 스티렌계 유도체 또는 비닐아크릴레이트 계통 유도체으 공중합체;상기 식에서, R1은 수소, 탄소수 1 내지 10개의 알킬기, 탄소수 6 내지 12개의 아릴기 또는 탄소수 3 내지 9개의 트리알킬실릴기이고; R2는 -OR′, -SO3R′, -CO2R′, -PO3R′, -SO2R′ 또는 -PO2R′(R′는 탄소수 1 내지 10개의 알킬기; 시클로알킬기; N, O, P, S의 헤테로원자를 포함한 시클로기; 또는, 탄소수 6 내지 12개의 아릴기)이며; R3는 수소, 탄소수 1 내지 10개의 알킬기, 탄소수 6 내지 12개의 아릴기, 탄소수 3 내지 9개의 트리알킬실릴기 또는 R2와 동일한 기이고; R4및 R5는 -OH, -OR(R은 탄소수 1 내지 10개의 알킬기 또는 탄소수 6 내지 12개의 아릴기) 또는 R1과 동일한 기이며; R″는 탄소수 6 내지 20개의 아릴기 또는 아크릴레이트(-COOR″′) (R″′는 탄소수 1 내지 10개의 알킬기 또는 탄소수 6 내지 12개의 아릴기)이고; m은 0 내지 10의 정수이며; k는 0.5 내지 0.95의 물분률이고; 및 1은 0.05 내지 0.5의 물분률이다.
- 제2항의 중합체를 포함하는 화학증폭형 포토레지스트.
- 제3항의 중합체를 포함하는 화학증폭형 포토레지스트.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950030063A KR0178475B1 (ko) | 1995-09-14 | 1995-09-14 | 신규한 n-비닐락탐 유도체 및 그의 중합체 |
US08/713,085 US5750680A (en) | 1995-09-14 | 1996-09-12 | N-vinyllactam derivatives and polymer thereof |
GB9619234A GB2305175B (en) | 1995-09-14 | 1996-09-13 | N-vinyllactam derivatives and photoresist polymers thereof |
DE19637425A DE19637425B4 (de) | 1995-09-14 | 1996-09-13 | Neue N-Vinyllactam-Derivate und deren Polymere |
NL1004032A NL1004032C2 (nl) | 1995-09-14 | 1996-09-13 | Nieuwe N-vinyllactam derivaten en polymeren daarvan. |
TW085111278A TW434460B (en) | 1995-09-14 | 1996-09-14 | Novel N-vinyllactam derivatives, polymer thereof, and photoresist composition containing the same |
CNB961199059A CN1152859C (zh) | 1995-09-14 | 1996-09-16 | 新型的n-乙烯基内酰胺衍生物和其聚合物 |
FR9611264A FR2738820B1 (fr) | 1995-09-14 | 1996-09-16 | Nouveaux derives de n-vinyllactame et leurs polymeres |
JP8245089A JP2929526B2 (ja) | 1995-09-14 | 1996-09-17 | N−ビニルラクタム誘導体とその重合体、及びその重合体を含有するフォトレジスト |
US09/026,169 US5955606A (en) | 1995-09-14 | 1998-02-19 | N-vinyllactam derivatives and polymer thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019950030063A KR0178475B1 (ko) | 1995-09-14 | 1995-09-14 | 신규한 n-비닐락탐 유도체 및 그의 중합체 |
Publications (2)
Publication Number | Publication Date |
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KR970015572A true KR970015572A (ko) | 1997-04-28 |
KR0178475B1 KR0178475B1 (ko) | 1999-03-20 |
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KR1019950030063A KR0178475B1 (ko) | 1995-09-14 | 1995-09-14 | 신규한 n-비닐락탐 유도체 및 그의 중합체 |
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Country | Link |
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US (2) | US5750680A (ko) |
JP (1) | JP2929526B2 (ko) |
KR (1) | KR0178475B1 (ko) |
CN (1) | CN1152859C (ko) |
DE (1) | DE19637425B4 (ko) |
FR (1) | FR2738820B1 (ko) |
GB (1) | GB2305175B (ko) |
NL (1) | NL1004032C2 (ko) |
TW (1) | TW434460B (ko) |
Families Citing this family (30)
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KR100197673B1 (en) * | 1996-12-20 | 1999-06-15 | Hyundai Electronics Ind | Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom |
US6124074A (en) | 1999-03-11 | 2000-09-26 | International Business Machines Corporation | Photoresist compositions with cyclic olefin polymers and hydrophobic non-steroidal multi-alicyclic additives |
US6251560B1 (en) | 2000-05-05 | 2001-06-26 | International Business Machines Corporation | Photoresist compositions with cyclic olefin polymers having lactone moiety |
US6627391B1 (en) | 2000-08-16 | 2003-09-30 | International Business Machines Corporation | Resist compositions containing lactone additives |
US7138218B2 (en) * | 2001-12-18 | 2006-11-21 | Hynix Semiconductor Inc. | Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator |
US6756180B2 (en) * | 2002-10-22 | 2004-06-29 | International Business Machines Corporation | Cyclic olefin-based resist compositions having improved image stability |
DE10259815A1 (de) * | 2002-12-19 | 2004-07-01 | Basf Ag | Polymere enthaltend Pyrrolidon-4-carbonsäuregruppen und deren Verwendung |
US8119392B2 (en) * | 2003-05-02 | 2012-02-21 | The University Of North Carolina At Charlotte | Biocompatible resists |
US7338742B2 (en) * | 2003-10-08 | 2008-03-04 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
US7270937B2 (en) * | 2003-10-17 | 2007-09-18 | Hynix Semiconductor Inc. | Over-coating composition for photoresist and process for forming photoresist pattern using the same |
KR100680405B1 (ko) * | 2003-11-19 | 2007-02-08 | 주식회사 하이닉스반도체 | Euv용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법 |
JP4758679B2 (ja) * | 2005-05-18 | 2011-08-31 | パナソニック株式会社 | レジスト材料及びそれを用いたパターン形成方法 |
US7745339B2 (en) * | 2006-02-24 | 2010-06-29 | Hynix Semiconductor Inc. | Method for forming fine pattern of semiconductor device |
KR100694412B1 (ko) * | 2006-02-24 | 2007-03-12 | 주식회사 하이닉스반도체 | 반도체소자의 미세패턴 형성방법 |
US8313876B2 (en) * | 2006-07-20 | 2012-11-20 | Hynix Semiconductor Inc. | Exposure mask and method for manufacturing semiconductor device using the same |
KR100849800B1 (ko) * | 2006-07-20 | 2008-07-31 | 주식회사 하이닉스반도체 | 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법 |
KR100861173B1 (ko) * | 2006-12-01 | 2008-09-30 | 주식회사 하이닉스반도체 | 액침 노광 공정을 이용한 반도체 소자의 패턴 형성 방법 |
KR20080057562A (ko) * | 2006-12-20 | 2008-06-25 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
JP5069494B2 (ja) * | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
KR100919564B1 (ko) * | 2007-06-29 | 2009-10-01 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
KR100876816B1 (ko) * | 2007-06-29 | 2009-01-07 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
WO2009152276A2 (en) | 2008-06-10 | 2009-12-17 | University Of North Carolina At Charlotte | Photoacid generators and lithographic resists comprising the same |
US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
KR101037528B1 (ko) | 2008-10-16 | 2011-05-26 | 주식회사 하이닉스반도체 | 반도체 소자의 패턴 형성 방법 |
JP6182864B2 (ja) * | 2012-01-17 | 2017-08-23 | 住友化学株式会社 | レジストパターンの製造方法 |
JP6283477B2 (ja) * | 2012-06-25 | 2018-02-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | アミド成分を含むフォトレジスト |
JP2020536898A (ja) | 2017-10-10 | 2020-12-17 | バイオジェン インコーポレイテッド | スピロ誘導体を調製するためのプロセス |
CN108517219A (zh) * | 2018-06-28 | 2018-09-11 | 深圳市华星光电技术有限公司 | 一种液晶材料、显示面板的制备方法、显示装置 |
CN113835296A (zh) * | 2021-09-28 | 2021-12-24 | 之江实验室 | 一种飞秒激光直写光刻胶组合物 |
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US3666473A (en) * | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
JPS5280022A (en) * | 1975-12-26 | 1977-07-05 | Fuji Photo Film Co Ltd | Light solubilizable composition |
NL8101200A (nl) * | 1981-03-12 | 1982-10-01 | Philips Nv | Werkwijze voor het aanbrengen van een resistmateriaal op een drager en resist-materiaal. |
JPS58174944A (ja) * | 1982-04-07 | 1983-10-14 | Toshiba Corp | パタ−ン形成法 |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
JPH04363309A (ja) * | 1991-06-11 | 1992-12-16 | Brother Ind Ltd | 光硬化型組成物 |
DE4124029A1 (de) * | 1991-07-19 | 1993-01-21 | Hoechst Ag | Verfahren zur herstellung von tert.-butyloxycarbonyl-gruppen tragenden organischen verbindungen |
DE4126409A1 (de) * | 1991-08-09 | 1993-02-11 | Hoechst Ag | Strahlungsempfindliches gemisch mit einem polymeren bindemittel mit einheiten aus (alpha)-(beta)-ungesaettigten carbonsaeuren |
JPH06118630A (ja) * | 1992-10-06 | 1994-04-28 | Tokyo Ohka Kogyo Co Ltd | 化学増幅型レジスト用塗布液組成物 |
-
1995
- 1995-09-14 KR KR1019950030063A patent/KR0178475B1/ko active IP Right Grant
-
1996
- 1996-09-12 US US08/713,085 patent/US5750680A/en not_active Expired - Fee Related
- 1996-09-13 GB GB9619234A patent/GB2305175B/en not_active Expired - Fee Related
- 1996-09-13 DE DE19637425A patent/DE19637425B4/de not_active Expired - Fee Related
- 1996-09-13 NL NL1004032A patent/NL1004032C2/nl not_active IP Right Cessation
- 1996-09-14 TW TW085111278A patent/TW434460B/zh not_active IP Right Cessation
- 1996-09-16 FR FR9611264A patent/FR2738820B1/fr not_active Expired - Fee Related
- 1996-09-16 CN CNB961199059A patent/CN1152859C/zh not_active Expired - Fee Related
- 1996-09-17 JP JP8245089A patent/JP2929526B2/ja not_active Expired - Fee Related
-
1998
- 1998-02-19 US US09/026,169 patent/US5955606A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR0178475B1 (ko) | 1999-03-20 |
CN1153775A (zh) | 1997-07-09 |
DE19637425B4 (de) | 2006-04-13 |
FR2738820A1 (fr) | 1997-03-21 |
JPH09216867A (ja) | 1997-08-19 |
GB2305175A (en) | 1997-04-02 |
TW434460B (en) | 2001-05-16 |
FR2738820B1 (fr) | 1998-09-11 |
DE19637425A1 (de) | 1997-04-03 |
US5955606A (en) | 1999-09-21 |
GB9619234D0 (en) | 1996-10-23 |
NL1004032C2 (nl) | 1997-05-21 |
NL1004032A1 (nl) | 1997-03-20 |
CN1152859C (zh) | 2004-06-09 |
US5750680A (en) | 1998-05-12 |
GB2305175B (en) | 1999-10-27 |
JP2929526B2 (ja) | 1999-08-03 |
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