TW434460B - Novel N-vinyllactam derivatives, polymer thereof, and photoresist composition containing the same - Google Patents
Novel N-vinyllactam derivatives, polymer thereof, and photoresist composition containing the same Download PDFInfo
- Publication number
- TW434460B TW434460B TW085111278A TW85111278A TW434460B TW 434460 B TW434460 B TW 434460B TW 085111278 A TW085111278 A TW 085111278A TW 85111278 A TW85111278 A TW 85111278A TW 434460 B TW434460 B TW 434460B
- Authority
- TW
- Taiwan
- Prior art keywords
- cns
- polymer
- vinyl
- quot
- page
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D207/18—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member
- C07D207/22—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D207/24—Oxygen or sulfur atoms
- C07D207/26—2-Pyrrolidones
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D207/18—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member
- C07D207/22—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D207/24—Oxygen or sulfur atoms
- C07D207/26—2-Pyrrolidones
- C07D207/273—2-Pyrrolidones with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to other ring carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D207/18—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member
- C07D207/22—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having one double bond between ring members or between a ring member and a non-ring member with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D207/24—Oxygen or sulfur atoms
- C07D207/26—2-Pyrrolidones
- C07D207/273—2-Pyrrolidones with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to other ring carbon atoms
- C07D207/277—Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D223/00—Heterocyclic compounds containing seven-membered rings having one nitrogen atom as the only ring hetero atom
- C07D223/02—Heterocyclic compounds containing seven-membered rings having one nitrogen atom as the only ring hetero atom not condensed with other rings
- C07D223/06—Heterocyclic compounds containing seven-membered rings having one nitrogen atom as the only ring hetero atom not condensed with other rings with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D223/08—Oxygen atoms
- C07D223/10—Oxygen atoms attached in position 2
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/02—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
- C07D405/12—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings linked by a chain containing hetero atoms as chain links
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F26/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
- C08F26/06—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F26/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
- C08F26/06—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
- C08F26/10—N-Vinyl-pyrrolidone
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Plural Heterocyclic Compounds (AREA)
- Other In-Based Heterocyclic Compounds (AREA)
- Hydrogenated Pyridines (AREA)
- Pyrrole Compounds (AREA)
Abstract
Description
4 34 4 6 Ο Α7 經濟部智慧財產局員工消资合作社印製 ___ Β7五、發明説明(丨) 發明領域 本發明係闞於一種新頴Ν —乙烯基内醢胺衍生物Μ及 其聚合物,供用於微石印術。更特別的說,本發明係龆於 Ν —乙烯碁内醯肢衍生物及聚合物,係作為光阻的物質, 藉著使用深紫外可以形成高敏感度和高解析度的影像,Κ 及其作為光阻的均聚合物和共聚合物。 前技敘述 通常|光阻主要包括鹼性可溶酚一(或甲酚一)甲醛 酚醛樹脂和取代的蔡親二叠氮化合物,作為光敏物質(光 活性成份),如美國專利第3,666 ,473號,4, 115,128號和4,173,470號所敘述者。 當用於此類光阻的酚醛樹脂溶於鹼性水溶液時,萘錕 光敏物質作為光阻的解離抑制劑。然而•當塗覆該光姐的 基質選擇性地接受化學輻射時*光敏劑經透導而產生结構 上的改變,如此使光阻塗覆的曝萏區域對鹼的溶解度大於 未曝霹區域。藉由此類溶解度的差異,可Μ在基質的塗覆 上刻成凸板圖案。換言之,當基質浸漬於鹼性顯影溶液時 ,光阻塗覆的曝露區域被溶解,而未曝露區域並未受到簧 質的影礬,而形成画案。然而,並未發ρ上述酚醛型態的 光阻劑適合使用未來將使用的更短波長的分檔器因為其在 深紫外線光(200至300nm)範圍有高度光學吸收 Ο 為了完成半等體製造業的石印術方法高敏度,最近開 I II ^ I i I . 線 (請先閲讀背面之注意事項罗‘寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨0><297公釐) 4 3446 〇 B7 經濟部智慧財產局員工消費合作社印製4 34 4 6 〇 Α7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Β7. V. Description of the Invention (丨) Field of the Invention The present invention relates to a new 頴 —vinyllactam derivative M and its polymerization. Objects for microlithography. More specifically, the present invention is based on N-vinyl ammonium limb derivatives and polymers, which are used as photoresist substances. By using deep ultraviolet light, high-sensitivity and high-resolution images can be formed. As photoresist homopolymers and copolymers. The previous description is usually | Photoresist mainly includes alkaline soluble phenol-one (or cresol-one) formaldehyde phenolic resin and substituted Cyanophil diazide compound, as a photosensitive material (photoactive component), such as US Patent No. 3,666 Nos. 473, 4, 115, 128 and 4,173,470. When the phenolic resin used for such photoresist is dissolved in an alkaline aqueous solution, the naphthalene hydrazone photosensitizer acts as a dissociation inhibitor of the photoresist. However, when the substrate coated with this photosensitizer selectively receives chemical radiation, the photosensitizer undergoes structural changes after permeation, so that the exposed area of the photoresist coating is more soluble in alkali than the unexposed area. With such a difference in solubility, a pattern of a convex plate can be engraved on the coating of the substrate. In other words, when the substrate is immersed in an alkaline developing solution, the exposed areas of the photoresist coating are dissolved, and the unexposed areas are not affected by the spring-like alum, forming a picture. However, the above-mentioned phenolic photoresist is not suitable for use in the shorter wavelength steppers that will be used in the future because it has a high optical absorption in the deep ultraviolet light (200 to 300nm). Industry's lithography method with high sensitivity, recently opened the I II ^ I i I. Line (please read the precautions on the back first, write this page) This paper size applies the Chinese National Standard (CNS) A4 specification (2 丨 0 > < 297 mm) 4 3446 〇B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
五、發明説明 ( ) I I I 發 化 學 放 大 光 阻 〇 的 確 9 化 學 放 大 光 咀 已 經 受 到 瞩 巨 因 * I I I 為 據 發 琨 其 能 夠 提 高 超 過 傳 統 陽 酚 m 光 阻 1 〇 0 倍 的 敏 度 -~、 I [ 請 I I 〇 基 於 光 酸 產 生 劑 之 利 ( 爾 後 稱 之 為 P A G t* ) 的 化 學 先 閱 I I 放 大 光 阻 般 係 製 備 於 調 配 P A G 於 會 敏 感 地 反 應 成 酸 的 背 ί i I 结 構 母 質 聚 合 物 中 0 對 光 反 應 的 機 制 而 言 1 當 P A G 曝 Μ 之 注 I 意 I 在 光 眧 之 下 或 者 被 商 能 量 光 束 照 射 此 如 X 射 線 和 電 子 束 事 項 I I 再 I I S 造 成 母 質 聚 合 物 的 主 鏈 或 側 鏈 反 應 而 趨 向 分 解 父 聯 或 4 寫 本 I 裝 造 成 極 性 大 幅 改 變 0 此 種 酸 的 作 用 在 被 照 射 區 域 誘 導 給 予 頁 、·· I I 顯 影 溶 液 的 溶 解 發 生 改 變 0 換 之 溶 解 度 提 高 或 降 低 0 I I I 结 果 可 Μ 胗 成 细 緻 的 圖 案 0 I I 對 光 和 輻 射 有 反 應 的 鹽 為 習 知 的 光 酸 產 生 劑 0 翰 鹽 I 訂 典 型 包 括 銨 鹽 錢 鹽 和 銳 等 〇 团 瓶 近 據 報 導 有 機 磺酸 酯 可 I I 作 為 光 酸 產 生 劑 0 I I I 可 Μ 與 酸 作 用 的 母 質 聚 合 物 例 如 為 具 備 側 鐽 如 级 丁 I I 基 酯 三 级 丁 基 碳 酸 m 三 级 丁 氧 基 或 三 級 丁 氧 基 羰 基 的 I .涑 聚 合 物 其 在 酸 的 作 用 之 下 會 分 解 成 為 羧 酸 或 醇 % 官 I ! 能 基 0 在 此 類 側 m 保 護 基 中 ,级 丁 氧 基 羰 基 的 敏 度 最 商 I I 0 此 類 處 於 被 保 護 吠 態 或 在 與 酸 反 應 之 前 可 與 酸 反 應 的 聚 I I 合 物 可 溶 於 有 櫬 溶 劑 1 但 是 不 溶 於 鹼 性 水 溶 液 中 0 然 而 t I I 如 果 可 與 酸 反 應 的 聚 人 α 物 藉 著 與 酸 的 反 應 而 脫 除 被 保 護 t I I 因 為 其 掻 性 顯 著 地 改 變 * 將 可 溶 於 鹼 性 水 溶 液 中 〇 I I 應 用 此 原 則 9 開 發 化 學 放 大 光 阻 在 近 年 來 已 經 成 為 熱 I I I 門 話 題 0 ir 級 丁 氧 基 羰 基 一 保 護 聚 乙 烯 基 酚 ( 爾 後 稱 之 為" I I 4- I I 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 4 34 4 6 Λ7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明説明(彡) t _b o c PVP")據報為最具潛力的樹脂,如在美國 專利第 4,491 ,628 號,4,405,708 號, 4,405 ,708 號 Μ 及 4 ,31 1 ,782 號中所揭 不者。 最近在次微石印術的趨勢是使用深紫外線(波長為 200至300nm)作為光源,較佳為高功效(波長 24 8 nm)的KrF激體雷射(excimer laser),而不是 傳統紫外線,例如s線(波長436nm)或者i線(波 長為365ητη) ,Μ期完成高敏性和高解析度。因此, 母質聚合物的光學吸收應該被減少到深紫外線的波長範圍 ,特別是在248nm,Kr F激體雷射的波長。然而 ’因為t — b 〇 c PVP也包含苯基,其顯著的缺.點是在 短坡長範圍有大虽光學吸收。 發明概要 本發明發明人以開發次石印術所用之不會吸收深紫外 線K及進行加工程序所必爾具備的高玻璃轉移溫度光阻所 作的重覆廣泛研究,结果是發琨經過被與酸反應基保護的 環脂糸化合物(N —乙烯基内醢胺)聚合的化學放大光阻 當被去保護時被轉變成為水性聚合物,如此藉著只使用弱 鹼水溶液或纯水,Μ取代強鹼水溶液,可被設計成圖案, 藉此大幅改善形成圜案的方法。 因此,本發明的一項主要目的是提供Ν-乙烯基內醯 胺衍生物單體,其中乙烯基内醯胺在其第3位置被各種保 ^ 5 - —---------裝— (請先閱讀背面之注意事項莩寫本筲) 本紙乐尺度適用中國國家橾準(CNS ) A4規格(210 X 297公釐) ^ 4 3446 0 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(牛) '1 1 I 護 基 阻 斷 可 作 為 用 於 微 石 印 術 之 光 阻 材 料 9 其 滿 足 高 敏 1 ! ! 度 和 高 解 析 度 0 - 1 I 本 请 1 I 發 明 的 另 一 § 的 是 提 供 一 種從該單體所製備的聚合 先 閱 讀 1 I 物 1 〇 背 1 面 t 本 發 明 的 又 另 _. 巨 的 是 提 供 — 種 用 於 光 阻 的 聚 合 物 0 之 注 i 意 I 發 明 詳 述 項 1 I 再 1 I 本 發 明 提 供 乙 烯 基 内 藤 胺 衍 生 物 單 體 其 中 乙 烯 基 内 填 寫 本 1 裝 醯 肢 在 其 第 三 位 置 被 保 護 〇 該 單 體 可 製 備 於 在 低 溫 下 反 頁 1 I 應 乙 烯 内 臨 胺 與 強 鹼 而 得 到 烯 醇 鹽 並等入保護基到乙烯 1 1 I 基 内 酵 胺 的 第 三 位 置 0 乙 烯 基 内 m 胺 的 實 例 包 括 N — 乙 m 1 1 基吡咯烷_ N — 乙 烯 基 — 4 — 丁基吡咯烷酮 N — 乙 烯 1 訂 基 — 4 — 丙 基 吡 烙 院 m N — 乙 烯 基 — 4 — 乙基吡.暗烷嗣 1 i 9 N - 乙 烯 基 — 4 — 甲 基 毗 咯 院 酮 N — 乙烯基 — 5 — 甲 ί i 基 一 5 — 乙 基 Dtt 咯 院 酮 N — 乙 烯 基 一 5 一 丙基吡咯烷嗣 I 1 I 1 N — 乙 烯 基 — 5 — 丁 基 吡 咯 院 酮 N — 乙 烯 基 — 5 — 哌 1 線 啶 _ N = 乙 烯 基 一 4 — 甲基啪啶嗣 N — 乙 烯 基 — 4 — 1 1 丙 基 呢 啶 m N — 乙 烯 基 一 4 — 丁基顿啶酮 N — 乙 烯 基 1 1 一 6 — 丁 基 哌 啶 N — 乙 烯 基 己 内 醢 胺 N — 乙 烯 基 — 1 l 4 — 甲 基 己 内醢胺 9 N 一 乙 烯 基 — 6 — 甲 基 己 内 醯 胺 N t I 一 乙 烯 基 — 6 — 丙 基 己 內 醯 胺 N 一 乙 m 基 -― 7 — 丁 基 己 ! 1 内 醯 胺 和 N — 乙 烯 基 醢 亞 胺 0 強 驗 可 為 鈒 丁 基 鋰 i 氫 化 1 I 納 和 正 丁 基 鋰 〇 此 單 體 製 備 係 在 溶 劑 中 進 行 的 t 溶 劑 包 括 1 I 正 戊 院 » 正 己 综 9 正庚烷 9 環 己 烷 9 乙 基 醚 和 四 氫 呋 m 0 1 1 I 6- 1 本紙張尺度適用中國國家標準{ CNS ) A4規格(210X297公釐) 〇 6 4 4 3 45. Description of the invention () III Chemical amplification photoresistance is indeed 9 The chemical amplification optical nozzle has been attracted great attention * III It is reported that it can increase the sensitivity by more than 100,000 times than traditional photoresistance m --- I [Please II 〇 A chemical pre-reading based on the benefits of photoacid generators (hereinafter referred to as PAG t *) II Amplified photoresist is prepared by preparing PAG on the back that will sensitively react to acid. In the polymer, 0 is the mechanism of photoreaction. 1 When PAG is exposed, I means I is under the light beam or irradiated by the commercial energy beam, such as X-ray and electron beam matters. II and IIS cause the main polymer of the master polymer. Chain or side chain reaction tends to decompose the parent or the 4 notebook I equipment causing a significant change in polarity 0 The effect of this acid is induced in the illuminated area Pre-page, ... II The dissolution of the developing solution is changed. 0 The solubility is increased or decreased. 0 III. The result can be a detailed pattern. II. The salt that is responsive to light and radiation is the conventional photoacid generator. Typical examples include ammonium salts, ammonium salts, sharps, and other groups. Recently, it has been reported that organic sulfonates can be used as photoacid generators. Ester tertiary butyl carbonate m tertiary butoxy or tertiary butoxycarbonyl I. 涑 polymer will decompose under the action of acid into carboxylic acid or alcohol% official I! Energy group 0 on this side Among the protective groups, the sensitivity of the highest butoxycarbonyl group is the most quotient II 0 This type of polyII compound in the protected bark state or reacts with the acid before reacting with the acid is soluble in the ammonium solvent 1 but is not soluble in the alkali Sex 0 in aqueous solution. However, if t II is reactive with acid, the poly-human α is removed by reaction with acid. T II is significantly changed in its nature. * It will be soluble in alkaline aqueous solution. II Apply this principle. 9 The development of chemically amplified photoresistors has become a hot topic in recent years. 0 ir-grade butoxycarbonyl-protected polyvinyl phenol (hereafter referred to as " II 4-II) This paper size applies to Chinese National Standard (CNS) A4 Specifications (210X297 mm) 4 34 4 6 Λ7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (彡) t _b oc PVP ") is reported to be the most potential resin, such as in US Patent No. 4 Nos. 491, 628, 4,405,708, 4,405,708 M and 4,31 1, 782. The recent trend in submicrolithography is to use deep ultraviolet light (wavelength 200 to 300nm) as the light source, preferably a high-efficiency KrF excimer laser (wavelength 24 8 nm), rather than traditional ultraviolet light, such as s-line (wavelength 436nm) or i-line (wavelength 365ητη), phase M completes high sensitivity and high resolution. Therefore, the optical absorption of the parent polymer should be reduced to the wavelength range of deep ultraviolet, especially at the wavelength of 248nm, Kr F laser. However, because t-boc PVP also contains a phenyl group, its significant disadvantage is that it has a large optical absorption in the short slope length range. SUMMARY OF THE INVENTION The inventors of the present inventor have conducted extensive research on the development of a high glass transition temperature photoresist that does not absorb the deep ultraviolet K used in sublithography and the processing procedures necessary for processing, and the result is that the bun is reacted with an acid The chemically amplified photoresist for the polymerization of a cycloprotected cycloaliphatic compound (N-vinyllactam) is converted to an aqueous polymer when deprotected, so that by using only a weakly alkaline aqueous solution or pure water, M replaces the strong base. The aqueous solution can be designed into a pattern, thereby greatly improving the method of forming a pattern. Therefore, a main object of the present invention is to provide N-vinyllactam derivative monomers, in which vinyllactam is protected in various ways at its third position. 5----------- Packing-(Please read the notes on the reverse side first). The paper scale is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) ^ 4 3446 0 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 、 Explanation of the invention (cow) '1 1 I Protective base blocking can be used as a photoresist material for microlithography. 9 It meets high sensitivity 1!! And high resolution 0-1 I. Please request another I of the invention § The purpose is to provide a polymerization prepared from the monomer. First read 1 I 物 1 〇 背 1 面 t This invention is another _. Giant is to provide-a kind of polymer for photoresistance. Item 1 I Another 1 I The present invention provides a monomer of vinyl natronamine in which the vinyl is filled in this 1 The limb is protected in its third position. This monomer can be prepared at reverse temperature at low temperature With a strong base to obtain an enolate and wait for the protective group to the third position of the ethylene 1 1 I endylamine. Examples of the vinyl amines include N — ethyl m 1 1 yl pyrrolidine — N — vinyl — 4 — Butylpyrrolidone N — Ethylene 1 Amino — 4 — Propylpyridine m N — Vinyl — 4 — Ethylpyridine. Dark alkyl hydrazone 1 i 9 N-Vinyl — 4 — Methylpyrrolidinone N — vinyl — 5 — methyl — i — 5 — ethyl Dtt ketone N — vinyl — 5 monopropylpyrrolidine I 1 I 1 N — vinyl — 5 — butyl pyrrolone N — Vinyl — 5 — Piperidine — N = Vinyl — 4 — Methylpyridine — N — Vinyl — 4 — 1 1 Propylidene m N — Vinyl One 4 — Butyltonidone N — Vinyl 1 1 — 6 — Butylpiperidine N — Vinyl Caprolactam N — Vinyl — 1 l 4 — Methyl Caprolactam 9 N — Vinyl — 6 — Methylcaprolactam N t I Monovinyl — 6 —propylcaprolactam N —Ethylmethane — 7 —butylhexyl! 1 Lactam and N —vinylimide 0 Strong test May be n-butyllithium i hydrogenated 1 I sodium and n-butyl lithium. This monomer preparation is performed in a solvent. Solvents include 1 I n-pentane »n-hexane 9 n-heptane 9 cyclohexane 9 ethyl ether and Tetrahydrofuran m 0 1 1 I 6- 1 This paper size applies to Chinese National Standard {CNS) A4 (210X297 mm) 〇6 4 4 3 4
7 7 A B 5 /_\ 明 説 明 發 ' 五 iiu 二氫 , 四 鹽 ’ 酸酐 甲酸 氯磺 基烷 一—I 甲 異 ’ ’ 氯 鹽滕 酸磺 甲烷 氯甲 基 ’ 丁鹽 為酸 者 碳 基二 護 > 保基 為 丁 作级 可 三7 7 AB 5 / _ \ It is clearly stated that the penta-iiu dihydro, tetra-salt 'anhydride anhydride chlorosulfanyl-1—I methyl iso' 'chloride salt sulphonyl chloromethane chloromethyl' butyl salt is acid-based carbon di Protection > Baoji is Ding Zuo Ke Kesan
苄趿 基 三 氧和 甲氯 - 基 4焼 ’ 矽 氯甲 基基 烷丙 矽 異 甲基 基乙 甲 二 三 , , 氯 〇 喃基氛 呋 ί卞 基 氫基烷 四硝矽 氯 I 甲 1 4 基 2 , 甲 , 氯 二 喃基 I 式 下 為 物 生 衍 胺 醢 内 基 烯 乙 - Ν 的 明 發 本 代 所 者 表 Π /Benzylhydrazine trimethyl and methyl chloride-methyl 4 '' silylchloromethyl alkanesilyl isomethyl ethyl mesityl, chlorofuranyl hydrazinohydroxane tetranitrosilyl chloride 1 methyl 1 4 group 2, methyl, chlorodiranyl I in the formula is a phyto-derived amine stilbene ethene-Ν by the present generation table / /
CC
2 Η C (請先閲讀背面之注意事項再填寫本頁) -裝·2 Η C (Please read the notes on the back before filling this page)
5 R Ν C· C. \\ ο 丁 --35 R Ν C · C. \\ ο DING --3
Η C Ε /Η C Ε /
2 R2 R
R 中 其R in which
2 1Χ 至 6 含 基 烷 的 子 原 碳 個 ο 至 r-Η 含 氫 為 R 經濟部智慧財產局員工消費合作杜印製 基 烷 矽 甲 2 基 ο 烷 C 三 I 的 , 子 -原 R 碳 3 個 ο 9 S 至 一 3 , 含. 或 R 基0 芳 -的為 子 2 原 R 碳 個2 1 × to 6 proton carbons containing alkane ο to r-Η Hydrogen is produced by the Intellectual Property Bureau of the Ministry of Economic Affairs for consumer cooperation Du printed alkanesilyl 2 radical ο alkane C tri I 3 ο 9 S to 1-3, containing. Or R group 0 aryl- is the sub 2 original R carbon
R 為烷 , 環 R 之 中子 ; 其原基 , 碳芳 , 個或 R 2 , 2 1 基 ο 至環 P 6 之 或含硫 , , 和 R 基磷 Z 烷 , ο 的氧 S 子 , I 原氮 , 碳如 / 個 子 R ο 原 3 1 雜 ο 至含 p. 1i t I 含基 2 或 1 基 至烷 6 矽 含甲 ’ 基 基烷 烷三 勺 勺 .m 子子 原原 碳碳 個 個 〇 9 1 至 至 3 1 含 含 , - 基 氫芳 為的 3 子 R 原 碳 個 本紙張尺度適用中國國家標率(CNS ) A4規格(210X297公釐> 43446 Ο Α7 ___Β7五、發明説明(6 ) 經濟部智慧財產局員工消費合作社印製 ο 與 括_|基}基级3哌醢|烯羰四32烯1 1 或 包烷基烯基 羰三, I 内基乙 基<* I 乙 I 至- ,咯 丁乙羰基丨嗣 2 己甲 I 氧 I 嗣基 1} 1 基 體tftl I 基氧 I 啶 I I II 喃 3 二丁 1 基 含芳 單 141 氧喃 3 哌基 261 吡,烷 I I 锻 為的 的 21 I 喃at, I 丙 I 1} 氫胺咯 4} 基 R 子 同 |基}吡氫酮 2|烯基基羥醢吡1基氧 中原 不 基烯基氫四烷 14 乙烯羰四内 I 基羰哺 其碳 種烯乙羰四 ί 咯基 I I 乙基丨己 2 烯基Eth , 個 各乙 I 基 丨|吡 甲基 11 氧 I _ 一 乙氧氳 R 2 成 II 氧 |3~ I 烯 II 哺 32 基一喃羥 01 合 II 丁 3,24乙}|姐, 一稀 1¾四 I 至Ml}l >嗣| I I 基丨氫胺基乙一氫 ί ,6 。可} 基級酮烷基基 1 羰基羥醯丙 1} 羥一 Η 含 數,基羰三烷咯乙烯 I 基羰四内 基四 3 ο 為 整法羰基丨咯吡 f 乙} 氧基丨己6 I 羰 ί 和 I 或 的方基氧 |吡|5| 基丁氧 I I 1} 基 I -為基 ο 的氧丁 3 i 2 I 1 羰级丁 32 基基氧 3 胺 S 烷 1 明丁 | , 21 基一基三级, I 烯羰喃-醯 ;R 的和至發 I 级嗣一基烯 }氧{ 三胺基乙基吡酮内 同和子;ο 本级三 烷基烯乙基丁 I { 醯丁 一 氧氫二己 相 4 原同為著三 ί 咯丙乙一羰鈒 3 I 內 I 1 喃羥烷 I 2R 子相 ε 藉 tlttll II 基三,3 己 51¾四咯 2 R 碳 1 131411 氧{嗣,11 丨氫 ifttl 與個 R 3, 211} 丁 I 啶胺 2 基棊羥 II 基 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS > A4現格(210XN7公釐) 4 34 4 b ϋ A7 87 、發明説明 ~乙烯基一 6 — 丁基—2 ~己內醸胺 合成的簞體可容易地在普通 基聚合起始劑加Μ聚合。藉著使 可以製備上述單體的均聚物以及 體之間有適當的冥耳比例)。對 它單體,冽如4- (三级丁氧基 環己烷,3,5--(二一三級 自由基聚合技術 用上述各種不同 綜合各種的共聚 中以自由 的簞體, 物(其單 共聚物而言,可Μ使用其 羰基氣基)一1一乙烯基 丁氧基羰基氧基)-i 一 乙烯基環己烷,4~ (四氫毗喃氧基) 院,4 一 (四氫呋喃氧基)一1 一乙歸 (二(四氫吡喃氧基))一1 — (二(四氫呋喃氧基))一 1_ 1 一乙稀基環己 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消*ί合作社印敦 基羰基氧基苯乙烯*苯乙烯和四 這些單體Μ籃體聚合方式進 行聚合。對聚合的溶劑而言,環 ,二噁烷,二甲基甲醯胺,不管 。通常情況下,聚合反應係在聚 例如苯甲醯過氧化物,2 > 2 ' Ν ) |乙醢過氧化物•月桂基過 PERACETATE 〇 依照本發明*所提供的聚合 和(I I I )所代表 乙烯基 乙烯基 氫吡哨 行聚合 己酮, 是單獨 合起始 一偶氮 氧化物 基己烷, 環己烷, 環己烷* 氧基苯乙 ’或是在 甲乙酮, 使用或者 劑存在下 雙異丁腈 或三级丁 3.5 — 3.5 — 三鈒丁氧 烯。 溶液中進 苯,甲苯 一起使用 進行的, (A I B 基R is an alkane, a ring R neutron; its original group, carboaryl group, or R 2, 2 1 group ο to ring P 6 or containing sulfur,, and R group phosphorus Z alkane, ο oxygen S atom, I Protonitrogen, carbon such as / 个 R 3 ο 3 3 1 hetero ο to p. 1i t I containing 2 or 1 to alkane 6 silicon containing methyl'yl alkane three spoons. M proton original carbon carbon 〇9 1 to 3 1 Contains,-3 hydrogen radicals containing R-carbon base Original paper size Applicable to China National Standard (CNS) A4 specification (210X297 mm > 43446 〇 Α7 ___ Β7 V. Description of the invention (6) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ο and _ | base} base 3 piperidine | enecarbonyl tetra 32 ene 1 1 or alkyl alkenyl carbonyl tri, I endyl ethyl < * I ethyl I to-, butyl ethyl carbonyl 嗣 嗣 2 hexane methyl I oxygen I fluorenyl 1} 1 base tftl I base oxygen I pyridine II II pyran 3 dibut 1 group containing aromatic mono 141 oxan 3 piperidine 261 pyridine, Alkyl II forged 21 I sulfonat, I propion I 1} hydrogen amine 4} group R is the same as | yl} pyridone 2 | alkenyl hydroxypyridine 1 yloxy unsubstituted alkenyl hydrotetraalkane 14 Ethylenecarbonyl tetral Carbonyl ethene carbonyl tetral rolyl II ethyl hexan 2 alkenyl Eth, each ethyl I group | | Pyromyl 11 oxygen I _ monoethoxy R 2 to II oxygen | 1-Hydroxy-hydroxy-01-H-II-but 3,24-B} | Sister, a dilute 1¾-tetra I to Ml} l > 嗣 | II group 丨 Hydroxyaminoethyl monohydrogen, 6, may} Basic ketoalkyl 1 Carbonyl hydroxypropane 1} hydroxy 1 Η content, the carbonyl carbonyl trialkyryl vinyl I carbonyl tetrainyl tetra 3 ο is the whole carbonyl 丨 lorpy f eth} oxy hexan 6 I carbonyl and I or Oxo | pyridine | 5 | oxobutoxy II 1} oxo I -oxo 3 i 2 I 1 oxobutyryl 32 oxobutoxy 3 amine S alkane 1 oxetane | I ene carbonyl- hydrazone; the sum of R to the first-grade fluorenyl monoalkylene} oxygen {triamine ethylpyridone internal synthon; ο trialkylene ethyl butyl I I Hexaphase 4 was originally the same. 3 I, propane, ethylene monocarbonyl, 3 I, inner I 1 hydroxyhydroxan I 2R subphase ε borrowed ttltt II radical three, 3 hex 51¾ tetrazol 2 R carbon 1 131411 oxygen {嗣, 11 丨 hydrogen ifttl and R 3, 211} Butyl I, Pyridylamine, 2-Hydroxyl II (Please read the notes on the back first (Fill in this page) This paper is in accordance with Chinese national standards (CNS > A4 (210XN7 mm) 4 34 4 b ϋ A7 87 、 Explanation of the invention ~ vinyl-6-butyl-2 ~ caprolactam Carcass can be easily polymerized with common base polymerization initiator plus M. By making it possible to prepare homopolymers of the above-mentioned monomers and to have a proper ratio of whimsical ears). For its monomers, such as 4- (tertiary butoxycyclohexane, 3,5-(two-three tertiary radical polymerization technology using the above-mentioned various comprehensive and various copolymerization to free carbohydrates, substances ( As for its single copolymer, it can be used as its carbonyl group)-1-vinyl butoxycarbonyloxy)-i-vinyl cyclohexane, 4 ~ (tetrahydropyranyloxy), 4- (Tetrahydrofuranoxy) 1 1 ethyl return (bis (tetrahydropyranyloxy)) 1 1 — (di (tetrahydrofuranoxy)) 1 1 1 ethylene dicyclohexyl (please read the precautions on the back first) (Fill in this page) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, the cooperative, Indenylcarbonyloxystyrene, styrene, and four of these monomers are polymerized in a basket polymerization method. For the polymerization solvent, cyclic Dimethylformamide, regardless. In general, the polymerization reaction is based on polymer such as benzamidine peroxide, 2 > 2 'N) | Acetyl peroxide • Lauryl peroxide PERACETATE 〇 According to the invention * The polymerization provided and (III) represented by vinyl vinyl hydropyridine polymerized hexanone are separate Starting with azooxide-based hexane, cyclohexane, cyclohexane * oxyacetophenone or bisisobutyronitrile or tertiary butane in the presence of methyl ethyl ketone, use or agent Ene. Benzene and toluene are used together in the solution. (A I B group
物係'由Μ下通式(I I 本紙張尺度逋用中國國家標準(CNS ) A私見格(210X297公釐) 4 34 46 Ο Α7 Β7五、發明説明(5 ) /1The material system is given by the following general formula (I I This paper size applies the Chinese National Standard (CNS) A Private view (210X297 mm) 4 34 46 〇 A7 B7 V. Description of the invention (5) / 1
R it C < 2 Η c 门R it C < 2 Η c door
、c 1\\ 4 R R, C 1 \\ 4 R R
NN
\\ C 〇\\ C 〇
一'' R 'C:A '' R 'C:
CINCIN
Η c /C 2Η c / C 2
R C, \\ 〇R C, \\ 〇
RR
C dC d
R 中 其 2 ; 1 基 至烷 6 矽 含 甲 ’ 基 基烷 烷三sK 子子 原原 碳碳 ^® 〇 9 1 至 至 3 1 含 含或 , 基 氫芳 為的 1 子 R 原 碳 個R in which 2; 1 group to alkane 6 silicon containing methyl ′ alkane alkane three sK proton original carbon carbon ^ ® 〇 9 1 to 3 1 containing 1 or R radicals containing or hydrogen radical
R ο I 為 Z RR ο I is Z R
R 3 ο SR 3 ο S
R ο C 為烷 , 環 R 之 中子 其原 丨 碳 , 個 R 2 z 1 ο 至 P 6 或含 R 基 2 烷 ο 的 S 子 I 原 , 碳 固 / ΛΡ R ο 3 1 ο 至 P '—< _ 含 2 或 1 基 至烷 ;6 矽 基含,甲 芳,基 或基烷 , 烷三 基的的 環子子 之原原 硫碳碳 和個個 磷 ο 9 , 1 至 氧至 3 , 1 含 氮含 , 如 > 基 子氫芳 原為的 雜 3 子 含 R 原 , 碳 基 個 ο 與 1 或 至 ’ 1 基 含芳 為的 R 子 中原 其碳 ’ 個 R 2 ο 1 - 至 , B Η 含 ο 為 - 或 為基 5 烷 R 的 和子 4 原 2 R 子 R 碳 與 個 同 相 ---------裝-- (請先閱讀背面之注意事項再4寫本頁) ν?τ 經濟部智慧財產局員工消費合作社印製R ο C is an alkane, a ring R neutron and its original carbon, R 2 z 1 ο to P 6 or an S group I containing an R group 2 alkano ο, carbon-fixed / Λρ R ο 3 1 ο to P ′ — ≪ _ Containing 2 or 1 radicals to alkanes; 6 Silicon radicals, methylaryl, radicals or alkanes, alkanyl radicals of the original sulfur carbon and all phosphorus ο 9, 1 to oxygen to 3, 1 nitrogen-containing, such as > Hetero-hydrogen is hetero-R-containing, R-carbon, ο with 1 or to '1 radical R-containing neutron-free carbon, R 2 ο 1-to , B Η Contains ο is-or is a radical of 5 alkane R and the original 4 R 2 R and the carbon are in phase with each other --------- install-(Please read the precautions on the back before writing this page ) ν? τ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
酸 烯 丙 表 代 者 或 基 芳 的 子 原 碳 個 ο 2 至 6 和含 ; 為 同 相 R R 的 子 原 碳 個 〇 IX 至 1Α 含 ; 為基 " 芳 , 的 R 子 中原 其碳 , 個 々 2 V 1 R 至 〇 6 ο 含 C或 - 基 鹽烷 數 整 的 ο,數 ο 整 , 的 οο '~^ 1 至 至 ο ο 1 為為 m η 本紙浪尺度適用中國國家標準(CNS ) A4規格(2I0X 297公釐) 4 3446 0 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(?) k為0 · 5至Q . 95之莫耳分率;和 1為0·05至〇.5之莫耳分率。 如同在上述通式所見者,聚合物(II)為均聚物, 其係來自於一種上逑單體或共聚物,聚合至少二種N -乙 烯基内醯胺衍生物的混合物。聚合物(I I I)為來自於 N -乙烯基内醢胺衍生物和苯乙烯衍生物或乙烯基丙烯酸 鹽衍生物的共聚物。 在所製備的聚合物中,經發現聚一3一 (三鈒丁氧基 羰基)一 1 一乙烯基~2 —吡咯_ (本文中稱之為"P ( BCVP) 在實驗中證實其具備高度透明性,在該實 驗中,1微米厚的薄膜在深紫外線範園(200至300 nm)顯示光學吸收度為〇·〇5或更低。熱重力分析( 本文稱之為〃 TGA")顯示P (BVCP)在高達21 Ot:時仍然安定。在高於2 1 0°C的溫度下.三级丁氧基 羰基發生快速的脫保護,產生2 -甲基丙烯和二氧化碳。 在酸的存在下,脫保護以兩步驟進行。第一,三鈒丁基在 低溫下(例如在60C)開始脫離聚合物骨架,在100 t:完全斷裂。之後,在1 50亡產生二氧化碳。此事實告 訴我們P (BCVP)由於其高熱分解溫度而且在低溫下 及酸存在下會很快的脫除保護,所K具備更優越的熱性質 。微差掃描熱度計(本文稱之為"DSC")顯示P (B CVP)的玻璃轉移溫度範園為I45t至155¾,依 其分子量而定。 -1 1- (請先閱讀背面之注意事項再~寫本頁) 本紙張尺度適用中國圉家標準(CNS ) A4規格(2lOX297公釐} 經濟部智慧財產局員工消費合作社印" A7 B7 五、發明説明(p) 所有N —乙烯基内醯胺衍生物的聚合物(其第三位置 被保護)顯示優良的薄瞑形成特性。特別的是,P ( B C VP)和聚一3 —(三鈒丁氧基羰基)一1—乙烯基一 2 —己內醯胺(本文稱之為〃 P (BCVP) 〃)在有機溶 劑如二噁焼,氯仿,四氫呋喃,環己酮,2-乙氧基乙基 醋酸酯,丙酮或甲乙酮的溶解度很好。相反地,被保護的 聚合物在鹸性水溶液如氫氧化納或銨鹽中的溶解度良好’ 但是在大部份有機溶劑的溶解度並不見得好。此種在三级 丁基之脫除保護之前和之後的選擇性顯像賦予聚合物優良 的影像形成能力。如果是P (BCVP),即使只用纯水 也能夠顯像。對其它包括P (BCVC)的聚合物而言’ 可Μ在弱鹼性水溶液中得到解析度高的影像。第三位置被 保護的乙烯基内醢胺衍生物的聚合物中,發現P (BCV Ρ)和P (BCVC)均為高敏度,例如lmJ/cm2 ,呈現高對比。 代表性聚合物P (BCVP)和P (BCVC)在各 種不同溶劑中的溶解度随著脫除保護而改變。如Μ下表1 所示的概要。 在酸的存在下,在1 0 OC或較低溫度可看到此類聚 合物薄膜三级丁基的脫除去保護。形成此類精緻影像的普 通試驗證實本發明聚合物可用於高敏度的化學放大光阻。 聚合物的熱分解行為分析可在氮氣大氣中及1 o°c/分鐘 的升溫速率下KDSC進行,DSC可自杜邦公司購得, -12- 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) i ϋ 訂 [ 後 (請先聞讀背面之注意事項再填寫本頁〕The allyl radicals of the acid allyl substituent or aryl are ο 2 to 6 and containing; are the in-phase RRs of the primary carbons 0IX to 1Α containing; are the radicals " aryl, the R of the protons are carbons, 々2 V 1 R to 〇6 ο Contains C or-based alkane number integer ο, number ο integer, οο '~ ^ 1 to ο ο 1 is m η This paper wave scale applies Chinese National Standard (CNS) A4 specifications (2I0X 297 mm) 4 3446 0 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (?) K is a Mohr fraction of 0.5 to Q 0.95; and 1 is 0.05 to Molar fraction of 0.5. As seen in the above general formula, the polymer (II) is a homopolymer, which is derived from a kind of monomer or copolymer, polymerizing a mixture of at least two N-vinyl endamide derivatives. The polymer (I I I) is a copolymer derived from an N-vinyllactam derivative and a styrene derivative or a vinyl acrylate derivative. In the prepared polymer, it was found that poly (3-tris (butoxycarbonyl))-(1-vinyl ~ 2-pyrrole) (herein referred to as " P (BCVP) has been experimentally verified to have High transparency. In this experiment, a 1 micron-thick film exhibits an optical absorbance of 0.05 or less in the deep ultraviolet range (200 to 300 nm). Thermogravimetric analysis (referred to herein as 〃 TGA ") It is shown that P (BVCP) is still stable at up to 21 Ot: at temperatures above 210 ° C. The tertiary butoxycarbonyl group undergoes rapid deprotection, producing 2-methylpropene and carbon dioxide. In the presence, deprotection is performed in two steps. First, tris-butylene begins to detach from the polymer backbone at low temperatures (for example, at 60C), and at 100 t: complete rupture. After that, carbon dioxide is generated at 150 deg. Our P (BCVP) has superior thermal properties due to its high thermal decomposition temperature and its rapid protection at low temperatures and in the presence of acids. The differential scanning calorimeter (referred to herein as "" DSC ") The glass transition temperature range showing P (B CVP) is I45t to 155¾, depending on -1 1- (Please read the precautions on the back before writing this page) This paper size is applicable to the Chinese family standard (CNS) A4 specification (2lOX297 mm) Printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs " A7 B7 V. Description of the invention (p) All polymers of N-vinyllactam derivatives (the third position of which is protected) show excellent thin fluorene formation characteristics. In particular, P (BC VP) and Poly 3- (trimethylbutoxycarbonyl) -1-vinyl-2-caprolactam (herein referred to as "P (BCVP)") in an organic solvent such as dioxin, chloroform, tetrahydrofuran, cyclohexyl Ketones, 2-ethoxyethyl acetate, acetone or methyl ethyl ketone have good solubility. Conversely, protected polymers have good solubility in alkaline aqueous solutions such as sodium hydroxide or ammonium salts' but are mostly organic The solubility of the solvent is not good. This selective development before and after the protection of tertiary butyl gives the polymer excellent image forming ability. If it is P (BCVP), it can be used even with pure water Visualization. For other polymers including P (BCVC) High-resolution images can be obtained in weakly alkaline aqueous solutions. P (BCV P) and P (BCVC) were found to be highly sensitive in the polymer of the vinyl lactam derivative protected at the third position, for example lmJ / cm2, showing a high contrast. The solubility of the representative polymers P (BCVP) and P (BCVC) in various solvents changes with deprotection. The outline is shown in Table 1 below. The presence of acid Below, the removal and protection of tertiary butyl of such polymer films can be seen at 10 OC or lower temperature. The general test for forming such delicate images confirms that the polymer of the present invention can be used for high-sensitivity chemically amplified photoresist. Analysis of the thermal decomposition behavior of polymers can be performed in KDSC in a nitrogen atmosphere and a heating rate of 1 o ° c / min. DSC can be purchased from DuPont. -12- This paper size applies to China National Standard (CNS) Α4 specifications ( 210 × 297 mm) i ϋ Order [After (please read the notes on the back before filling in this page]
4 34 4 b U A7 B7五、發明説明(I丨) 型號為2 1 00 ,K及用TGA進行。 表1 P (BCVP)和P (BCVC)的脫除保護 經濟部智慧財產局員工消资合作社印製 溶劑 P(BCVP) P (BCVC) P(VPCA)* P (V C C A) * 丙_ - - 二噁烷 + + + + + 氛仿 + + + + ~ 己烧 - - ~ - 四氫呋喃 + + + + + + 苯甲瞇 + + 環己_ +十 + 2-乙氧基乙基醋酸酯 +十 - N,N-二甲基甲醢胺 + + + + + + 甲乙萌 + + + + + 3.0wU氫氧化納溶液 + - + + + 2 . 38wUTHAM溶液 - - + + + 纯水 - — + + + 甲酵 + 十 + 異丙醇 + + + + 純水/甲醇(1/1) + -13- + + + + --1-------裝------訂---------線 (請先聞讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) 4 34 d b' 0 A7 ____B7五、發明説明(/2 ) 經濟部智慧財產局員工消費合作社印製 + +溶解良好 +微溶 -不溶 P(VPCA):聚Π -乙烯基-2-吡咯烷嗣-3-羧酸 P(VCCA):聚Π -乙烯基-2-己内醯胺-3 -羧酸 在K下實例的說明之下,對本發明會有更詳细的認識 ,實例目的在說明,不對本發明構成限制。 實例I 合成3— (三级丁氧基羰基)_1一乙烯基_2—毗咯烷 萌 對二異丙基胺(14毫升,100毫莫耳)在無濕氣 之4 0毫升四氫呋喃中所形成的溶液加入4 0毫升(1 0 〇毫莫耳)2 · 5M的正丁基鋰•所得到的溶液在一78 艺攪拌3 0分鐘,使其反應直到溫升高到室溫為止。在被 冷凍到- 78¾時,將1 1 · 1克(100毫冥耳)的Ν 一乙烯基吡咯烷二酮加入溶液中,在相同溫度下反應30 分鐘。之後,滴加24克(1 10毫莫耳)的二(三鈒丁 基)二碳酸酯,接著在一 7 8t:反應2小時。此反應被二 乙醚稀釋•以純水洗滌多次。蒸餾有機相的有機溶劑•殘 留物在矽膠上進行管柱 層析,製得15克的3 — (三级 丁氧基羰基)一1 一乙烯基一2 [«咯烷二嗣(本文稱之為 B C V P ")。其化學结構偽由Ϊ R光譜和NMR決定 -1 4 - (請先閱讀背面之注意事項再填寫本頁) _裝- 訂 本紙張尺度適用中國國家橾準(CNS ) A4現格(210X297公釐) 4 34 46 Ο Μ 經濟部智慧財產局員工消費合作社印製 Β7五、發明説明(β) 的。 實例I I 合成3 — (三級丁氧基羰基)一 1 一乙烯基一 2 —己内醢 胺. 以類似實例I之方式合成1 7 · 2克的純3 _ (三趿 丁氧基欺基)乙铺基一 2 —己内酿胺(本文稱之為 〃 BCVC"),唯一不同的是使用13 ,9克(100 毫莫耳)的N —乙烯基己内醢胺取代N —乙烯基吡咯烷二 嗣。IR光譜和NMR分析決定合成的BCVC之化學結 構。 實例I I I 合成3 - (四氫吡喃氧基羰基)—1—乙烯基_2 —吡咯 烷二酮 10 · 6克(0 · 05莫耳)之合成於實例I的 BCV P溶於5 0毫升的無濕氣四氫呋喃中。對此溶液加 人4 - 3克(0 * 05莫耳)四氫毗喃和0 · 3克對甲苯 磺酸,使反應在0Ό進行4小時。Μ二乙醚稀釋,Μ純水 洗滌多次。蒸餾有機相的有機溶劑,殘留物茌矽膠上進行 管柱層析,製得9·8克的纯3— (四氫吡喃氧基羰基) —1 一乙旆基一 2 — Itt咯烷二酮,。其化學结構係由I R 光譜和NMR決定的。 賁例I V 合成3 —(四氫呋喃氧基羰基)一 1_乙烯基—2—吡塔 -15 - I--------装------1T--^--^-- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家揉準(CNS ) A4規格(2丨0 X 297公釐) 經濟部智慧財產局員工消貪合作社印裳 4 34 4 6 0 A7 B7五、發明説明(也) 烷二_ 8 . 9克N —乙烯基一 2 —吡咯烷二酮一3_納碳酸 鹽溶於5 0毫升的無濕氣 四氫呋喃中。對此溶液加入7毫升三乙胺和5 ,3克的2 一氯四氫呋喃,反應在室溫下進行1小時。以二乙醚稀釋 ,K純水洗滌多次。蒸餾有機相的有機溶劑,殘留物在矽 膠上進行管柱層析*製得9·3克的純3~ (四氫呋喃氧 基羰基)_1 一乙烯基_2_吡咯烷二嗣(本文稱之為" T F V P 〃:)。其化學结構係由I R光譜和N M R決定的 〇 實例V 合成3 —(四氫吡喃氧基羰基)一 1 一乙烯基—2 _己内 醯胺 依類似於實例I I I的方式合成10 · 7克的純3 — (四氫吡喃氧基羰基)一1—乙烯基一 2 -己內醯胺(本 文稱之為"TPVC" ) 唯一不同的是Μ6 _ 7克Ν — 乙烯基己内醯胺取代BCVP。所合成TVPC的化學结 構係由I R光譜和NMR決定。 貴例V I 合成3 — (四氫呋喃氧基羰基)一1_乙烯基一 2-己内 醯胺 依類似於實例ί V的方式合成1 0 · 8克的純3~ ( 四氫呋喃氧基羰基)一1 一乙烯基一2 —己内醯胺(本文 -16- (請先閲讀背面之注意事項再填寫本頁) 本紙乐尺度逋用中國國家標準(CNS ) Α4洗格U丨ΟΧ297公釐) 經濟部智慧財產局員工消贫合作社印製 434460 A7 B7五、發明説明(心) 稱之為"TFVC"),唯一不同的是Ml 0 3克N — 乙烯基_ 2 —己内釀肢一3 —納碳酸納取代N —乙烯基— 2 _吡咯烷二酮一 3 —碳酸納。所合成T F P C的化學結 構係由I R光譜和N M R決定。 實例V I I BCVP聚合物的合成 將2 · 1克的合成於資例I的B C V Ρ單體溶於純溶 劑或混合 溶劑中,並置於聚合玻璃(AMPLE)中, 反應物在7 ΟΌ、真空及聚合起始劑A I BN存在下進行 6小時,反應產物沈澱於石油醚中,沈澱物經乾燥後得到 1·8克的聚合物P(BCVP),轉變率為80%。經 觀察,其固有粘度隨著所使甩的溶劑的不同而變化,但是 其環己_溶液在2 51及使用粘度管狀態下經測得粘度為 0_5/公合,結果如下表2所示。 . 表2 P (BCVP)在各種溶劑中的物理性質 ------1---裝------訂------線 (請先Μ讀背面之注意事項再填寫本頁) 溶劑^ AIBNb M/SC 時間 轉化率 固有粘度 (莫耳υ (克/毫升)(小時) U) (公合/克)(¾) A 1 1 1 0 8 9 <0 . 10 - B 1 1 5 89 0.12 - Cl 1 10 91 0.18 143 -17- 本紙浪尺度適用中國國家橾準(CNS) Α4規格(210X297公釐) 4 3446 Ο Α7 Β7 五、發明説明(16 ) 0. 90 0.20 151 91 0 . 30 152 90 0.77 155 經濟部智慧財產局員工消贲合作社印製4 34 4 b U A7 B7 V. Description of the invention (I 丨) Model is 2 1 00, K and TGA. Table 1 Deprotection of P (BCVP) and P (BCVC) Printed solvent P (BCVP) P (BCVC) P (VPCA) * P (VCCA) * C_--2 Dioxane + + + + + Atomic + + + + ~ Hexagon--~-Tetrahydrofuran + + + + + + Benzamidine + + Cyclohexane + + Deca + 2-ethoxyethyl acetate + De- N, N-dimethylformamide + + + + + + methyl ethyl molybdenum + + + + + 3.0wU sodium hydroxide solution +-+ + + 2. 38wUTHAM solution--+ + + pure water-+ + + Formazan + Ten + Isopropanol + + + + Pure Water / Methanol (1/1) + -13- + + + + --1 ------- Packing ------ Order --- ------ line (please read the notes on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) 4 34 db '0 A7 ____B7 V. Description of the invention ( / 2) Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs + + Good solubility + Slightly soluble-Insoluble P (VPCA): PolyΠ-Vinyl-2-pyrrolidine 嗣 -3-carboxylic acid P (VCCA): PolyΠ -Vinyl-2-caprolactam-3 -carboxylic acid Under the description of the examples under K, the present invention will be understood in more detail, the purpose of the examples Description, not to limit the present invention. Example I Synthesis of 3- (tertiary butoxycarbonyl) _1-vinyl_2-pyrrolidinone p-diisopropylamine (14 ml, 100 mmol) in 40 ml of tetrahydrofuran without moisture The resulting solution was added with 40 ml (100 mmol) of 2 · 5M n-butyllithium. The resulting solution was stirred for 30 minutes at 78 ° C and allowed to react until the temperature rose to room temperature. When frozen to -78¾, 1 · 1 g (100 millimoles) of N-vinylpyrrolidinedione was added to the solution and reacted at the same temperature for 30 minutes. After that, 24 g (110 mmol) of bis (trimethylbutyl) dicarbonate was added dropwise, followed by reaction at 778 t: 2 hours. The reaction was diluted with diethyl ether and washed several times with pure water. The organic solvents and residues of the organic phase were distilled on silica gel and subjected to column chromatography to obtain 15 g of 3- (tertiary butoxycarbonyl) -1 vinyl-1 2 For BCVP "). Its chemical structure is determined by Ϊ R spectrum and NMR-1 4-(Please read the notes on the back before filling this page) _pack-the size of the paper is applicable to China National Standard (CNS) A4 (210X297 mm) ) 4 34 46 0 Μ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs of the B7 V. Invention Description (β). Example II Synthesis of 3 — (tertiary butoxycarbonyl) -1 vinyl 1-caprolactam. In a manner similar to Example I, 17.2 g of pure 3_ (trimethylbutoxythiol) was synthesized. ) Ethyl-2-caprolactam (referred to herein as 〃 BCVC "), the only difference is the use of 13.9 g (100 mmol) of N-vinyl caprolactam instead of N-vinyl Pyrrolidine diamidine. IR spectrum and NMR analysis determine the chemical structure of the synthesized BCVC. Example III Synthesis of 3-(tetrahydropyranyloxycarbonyl) -1-vinyl_2-pyrrolidinedione 10. 6 g (0. 05 mol) was synthesized in Example I. BCV P was dissolved in 50 ml Moisture-free tetrahydrofuran. To this solution was added 4-3 g (0 * 05 mole) of tetrahydropyran and 0.3 g of p-toluenesulfonic acid, and the reaction was carried out at 0 ° C for 4 hours. Diethyl ether was diluted and washed with pure M water several times. The organic solvent of the organic phase was distilled, and the residue was subjected to column chromatography on silica gel to obtain 9.8 g of pure 3- (tetrahydropyranyloxycarbonyl) -1 ethylacetyl-2. Itt pyridinediol ketone,. Its chemical structure is determined by IR spectra and NMR.贲 例 IV Synthesis of 3 — (tetrahydrofuranoxycarbonyl)-1-vinyl-2-pyrta-15-I -------- pack ----- 1T-^-^- (Please read the notes on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (2 丨 0 X 297 mm) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, Anti-corruption Cooperative, Co., Ltd. 4 34 4 6 0 A7 B7 V. Description of the invention (also) Alkane 8.9 grams of N-vinyl-2-pyrrolidinedione-3-carbonate is dissolved in 50 ml of moisture-free tetrahydrofuran. To this solution, 7 ml of triethylamine and 5.3 g of 2 monochlorotetrahydrofuran were added, and the reaction was carried out at room temperature for 1 hour. Dilute with diethyl ether and wash with K pure water several times. The organic solvent of the organic phase was distilled, and the residue was subjected to column chromatography on silica gel to obtain 9.3 g of pure 3 ~ (tetrahydrofuranoxycarbonyl) _1-vinyl_2_pyrrolidine difluorene (herein referred to as " TFVP 〃 :). Its chemical structure is determined by IR spectrum and NMR. Example V Synthesis of 3- (tetrahydropyranyloxycarbonyl)-1-vinyl-2-caprolactam was synthesized in a manner similar to that of Example III. 10.7 g Pure 3 — (tetrahydropyranyloxycarbonyl) — 1 —vinyl — 2 —caprolactam (herein referred to as " TPVC "), the only difference is M6_7g N-vinyl caprolactam Amine replaces BCVP. The chemical structure of the synthesized TVPC is determined by IR spectra and NMR.贵 例 VI Synthesis of 3— (tetrahydrofuranoxycarbonyl)-1-vinyl-2-caprolactam was synthesized in a manner similar to that of Example ί 1 0 · 8 g of pure 3 ~ (tetrahydrofuranoxycarbonyl) -1 One vinyl one 2-caprolactam (This article-16- (Please read the precautions on the back before filling this page) This paper uses the Chinese standard (CNS) Α4 wash grid U 丨 〇297 × 297 mm) Ministry of Economic Affairs Printed by the Intellectual Property Bureau's Anti-poverty Cooperative 434460 A7 B7 V. Description of Invention (Heart) is called " TFVC "), the only difference is Ml 0 3g N — vinyl _ 2 — Capsules 1 — 3 — Sodium sodium carbonate replaces N-vinyl-2-pyrrolidinedione-3-sodium carbonate. The chemical structure of the synthesized T F PC is determined by the IR spectrum and N M R. Example VII Synthesis of BCVP polymer 2.1 grams of the BCV P monomer synthesized in Example I was dissolved in a pure solvent or a mixed solvent and placed in a polymer glass (AMPLE). The reaction was carried out in the presence of the initiator AI BN for 6 hours. The reaction product was precipitated in petroleum ether. The precipitate was dried to obtain 1.8 g of polymer P (BCVP), with a conversion rate of 80%. It is observed that its intrinsic viscosity varies with the different solvents to be shaken, but its cyclohexyl solution has a viscosity of 0_5 / common measured under the condition of 2 51 and the use of a viscosity tube. Table 2 Physical Properties of P (BCVP) in Various Solvents -------------------------------- Order (Please read the precautions on the back before filling This page) Solvent ^ AIBNb M / SC Time Conversion Intrinsic Viscosity (Moore (g / ml) (hour) U) (Common / g) (¾) A 1 1 1 0 8 9 < 0. 10- B 1 1 5 89 0.12-Cl 1 10 91 0.18 143 -17- The scale of this paper is applicable to China National Standards (CNS) A4 specifications (210X297 mm) 4 3446 〇 Α7 Β7 V. Description of the invention (16) 0. 90 0.20 151 91 0. 30 152 90 0.77 155 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
iL A為甲乙謂,B為環己嗣 C為二噁烷/環己嗣(3/1體積比) D為二噁烷/環己嗣(5/1體積比) E為二噁烷/環己酮U0/1體積比) F為二噁烷 b Μ單體為基準的莫耳S: e溶劑體積對單體縴重的比例 d玻璃轉移溫度 實例V I I I至X I I I 合成 BCVC,TPVP * TFVP ,TPVP ,TPV C和TFVC聚合物 以相同於實例V I ί的程序,分別使用於實例I I至 VI 所合成的里體 BCVC,TPVP,TFVP,ΤΡ VC和TFVC製備聚合物P (BCVC) ,P (TPV Ρ ) > P ( T F V P ) ,P(TPVC)和 P(TFVC -18- 本紙浪尺度適用中國國家標準(CNS ) A4規格(210X297公釐) I--------^------——--π--線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消賁合作社印製, 4 3 α 4 6 0 Α7 Β7五、發明説明(// ) 實例X I I I 製備光阻溶液和形成陽刻细緻影像(I ) 將10%至30%重量的P ( B C V P )溶於環己酮 中,在此溶液中加入5%至3 0%重量(以光姐聚合物重 量為基準)的作為光酸製造者的有翁鹽或有機磺酸。用超 细過濾器進行過漶,得到化學放大光阻溶液。接著,將該 溶液旋轉塗覆於矽晶片上,形成厚度約10微米的薄膜 。此晶片在加熱到1 2 0 C的烘箱或熱板上預烘烤1至5 分鐘,暴露於深紫外線分檔器或激體雷射分檔器之下光照 ,在加熱至1 2 0至1 40Ό之烘箱中或熱板上進行後暴 露烘烤(PEB)達1至5分鐘,浸漬於純水中達90秒 以進行顯影。结果,得到次微米陽刻光阻影像。 實例X I V 製備光阻溶液和形成陽刻细緻影像(ϊ ί ) 使用P(BCVC),重覆實例XI II之程序|得 到光阻溶液。浸憒於0 ,8 96重量的T M A Η水溶液中達 9 0秒而得到次微米之陽刻光咀影像。 實例X V 製備光姐溶液和形成陽刻细緻影像(III) 使用得自茛例乂111至父11之卩(丁?¥卩)· -1 9- 本紙張尺度適用中國國家標率(CNS ) Μ规格(2丨0 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) .裝 X -5 涑 A7 經濟部智慧財產局負工消費合作社印製 B7五、發明说明(β) 重覆實例X I I I之程序,得到光阻溶寐。浸漬於0 . 8 %重量的TMAH水溶掖中達90秒而得到顯示於圖3之 次微衆的陽刻光姐影像。 實洌X V I 製餚光阻溶液和形成陽刻细緻影像(I V) 使用得自實例VI I I至XI I之p (TFVP), 重覆實例X Ϊ I I之程序*得到光胆溶液。浸漬於0 ‘ 8 %重量的T M A Η水溶疲中達9 0秒而得到顯示於匾4之 次微米之陽刻光阻影像。 如同以上所述及證明者 > 本發明新穎的Ν —乙烯基内 醢胺衍生物為用於適合作為深紫外線之化學放大光姐之均 聚物和共聚物。因此,該光照敏性聚合物可應用於高積體 半導體装置Κ及電子裝置石印術。结果藉著使用由本發明 方法所製成的光*可Μ製得超鈕電路Κ及達到在圖案形成 方面的特殊改善。。 本發明係以舉例方式加Μ說明,應理解的是所使用的 術語係意肷作為敘述之用而非用Κ限制。 基於以上的教導可能得到許多對本發明的改良以及愛 化,因此,應理解的是在所附的申請專利範圍内可以用該 限定以外的方式實施本發明。 (請先閱讀背面之注意事項再填寫本頁} 本紙張尺度適用中國國家標率(CNS ) Α4規格(2〖0X297公釐)iL A is methyl ethyl, B is cyclohexane, C is dioxane / cyclohexane (3/1 volume ratio), D is dioxane / cyclohexane (5/1 volume ratio), E is dioxane / cyclo Hexanone U0 / 1 volume ratio) F is dioxane b M monomer based Moore S: e ratio of solvent volume to monomer fiber weight d glass transition temperature Examples VIII to XIII Synthesis of BCVC, TPVP * TFVP, TPVP , TPV C and TFVC polymers were prepared using the same procedures as in Example VI, using the inner bodies BCVC, TPVP, TFVP, TP VC and TFVC synthesized in Examples II to VI to prepare polymers P (BCVC), P (TPV ρ ) > P (TFVP), P (TPVC) and P (TFVC -18- This paper wave standard is applicable to China National Standard (CNS) A4 specification (210X297 mm) I -------- ^ ---- --——-- π--line (Please read the notes on the back before filling out this page) Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs, 4 3 α 4 6 0 Α7 Β7 V. Description of the invention (// ) Example XIII Preparation of a photoresist solution and formation of a detailed engraved image (I) 10% to 30% by weight of P (BCVP) was dissolved in cyclohexanone, and 5% to 30% by weight (to light sister Polymer weight is As a photoacid maker, there are onium salt or organic sulfonic acid. After being filtered with an ultra-fine filter, a chemically amplified photoresist solution is obtained. Then, the solution is spin-coated on a silicon wafer to form a thickness of about 10 Micron film. This wafer is pre-baked in an oven or hot plate heated to 120 ° C for 1 to 5 minutes, exposed to deep UV steppers or laser laser steppers, and heated to 1 Post-exposure bake (PEB) in an oven or hot plate for 20 to 1 40 ° C for 1 to 5 minutes, immersed in pure water for 90 seconds for development. As a result, a submicron engraved photoresist image is obtained. Example XIV Preparation of photoresist solution and formation of detailed engraved image (ϊ ί) Using P (BCVC), repeat the procedure of Example XI II | to obtain a photoresist solution. Immerse in 0,8 96 weight of TMA Η aqueous solution for 90 seconds and Obtain the submicron image of the engraved light nozzle. Example XV Preparation of the light sister solution and the formation of detailed engraved images (III) Use of 茛 (丁? 卩) from 茛 111--11 父 · -1 9- This paper size applies China National Standards (CNS) Μ specifications (2 丨 0 X 297 mm) (Please read first Note on the back, please fill out this page again.) Install X -5 涑 A7 Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Invention Description (β) Repeat the procedure of Example X I I I to get the photoresist solution. It was immersed in 0.8% by weight of TMAH water-soluble tincture for 90 seconds to obtain an image of a masculine engraved sister as shown in FIG. X V I was used to prepare a photoresist solution and form an engraved detailed image (IV). Using p (TFVP) obtained from Examples VI I I to XI I, the procedure of Example X Ϊ I I was repeated * to obtain a photobiliary solution. It was immersed in 0 ′ 8% by weight of T M A Η water for 90 seconds to obtain a submicron photoresist image displayed on the plaque 4. As described above and the prover > The novel N-vinyl lactam derivative of the present invention is a homopolymer and a copolymer suitable for use as a chemically amplified photosensitizer in deep ultraviolet rays. Therefore, the light-sensitive polymer can be applied to high-volume semiconductor devices K and electronic device lithography. As a result, by using the light * produced by the method of the present invention, a super button circuit K can be produced and a special improvement in pattern formation can be achieved. . The present invention is illustrated by way of example, and it should be understood that the terminology used is intended for narrative purposes and not for limitation. Based on the above teachings, many improvements and affiliations to the present invention may be obtained. Therefore, it should be understood that the present invention can be implemented in other ways than within the scope of the attached patent application. (Please read the notes on the back before filling out this page} This paper size applies to China National Standards (CNS) Α4 specifications (2 〖0X297mm)
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950030063A KR0178475B1 (en) | 1995-09-14 | 1995-09-14 | Novel n-vynyl lactam derivatives & their polymers |
Publications (1)
Publication Number | Publication Date |
---|---|
TW434460B true TW434460B (en) | 2001-05-16 |
Family
ID=19426831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085111278A TW434460B (en) | 1995-09-14 | 1996-09-14 | Novel N-vinyllactam derivatives, polymer thereof, and photoresist composition containing the same |
Country Status (9)
Country | Link |
---|---|
US (2) | US5750680A (en) |
JP (1) | JP2929526B2 (en) |
KR (1) | KR0178475B1 (en) |
CN (1) | CN1152859C (en) |
DE (1) | DE19637425B4 (en) |
FR (1) | FR2738820B1 (en) |
GB (1) | GB2305175B (en) |
NL (1) | NL1004032C2 (en) |
TW (1) | TW434460B (en) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100197673B1 (en) * | 1996-12-20 | 1999-06-15 | Hyundai Electronics Ind | Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom |
US6124074A (en) | 1999-03-11 | 2000-09-26 | International Business Machines Corporation | Photoresist compositions with cyclic olefin polymers and hydrophobic non-steroidal multi-alicyclic additives |
US6251560B1 (en) | 2000-05-05 | 2001-06-26 | International Business Machines Corporation | Photoresist compositions with cyclic olefin polymers having lactone moiety |
US6627391B1 (en) | 2000-08-16 | 2003-09-30 | International Business Machines Corporation | Resist compositions containing lactone additives |
US7138218B2 (en) * | 2001-12-18 | 2006-11-21 | Hynix Semiconductor Inc. | Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator |
US6756180B2 (en) * | 2002-10-22 | 2004-06-29 | International Business Machines Corporation | Cyclic olefin-based resist compositions having improved image stability |
DE10259815A1 (en) * | 2002-12-19 | 2004-07-01 | Basf Ag | Polymers containing pyrrolidone-4-carboxylic acid groups and their use |
US8119392B2 (en) * | 2003-05-02 | 2012-02-21 | The University Of North Carolina At Charlotte | Biocompatible resists |
US7338742B2 (en) * | 2003-10-08 | 2008-03-04 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
US7270937B2 (en) * | 2003-10-17 | 2007-09-18 | Hynix Semiconductor Inc. | Over-coating composition for photoresist and process for forming photoresist pattern using the same |
KR100680405B1 (en) * | 2003-11-19 | 2007-02-08 | 주식회사 하이닉스반도체 | Photoresist Composition for EUV and Method for forming Photoresist Pattern using the same |
JP4758679B2 (en) * | 2005-05-18 | 2011-08-31 | パナソニック株式会社 | Resist material and pattern forming method using the same |
US7745339B2 (en) * | 2006-02-24 | 2010-06-29 | Hynix Semiconductor Inc. | Method for forming fine pattern of semiconductor device |
KR100694412B1 (en) * | 2006-02-24 | 2007-03-12 | 주식회사 하이닉스반도체 | Method for forming fine patterns of semiconductor devices |
US8313876B2 (en) * | 2006-07-20 | 2012-11-20 | Hynix Semiconductor Inc. | Exposure mask and method for manufacturing semiconductor device using the same |
KR100849800B1 (en) * | 2006-07-20 | 2008-07-31 | 주식회사 하이닉스반도체 | Exposure mask and method for manufacturing semiconductor device using the same |
KR100861173B1 (en) * | 2006-12-01 | 2008-09-30 | 주식회사 하이닉스반도체 | Method for Forming Pattern of Semiconductor Device Using Immersion Lithography Process |
KR20080057562A (en) * | 2006-12-20 | 2008-06-25 | 주식회사 하이닉스반도체 | Method for forming fine pattern of semiconductor device |
US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
JP5069494B2 (en) * | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | Water-soluble resin composition for forming fine pattern and fine pattern forming method using the same |
KR100919564B1 (en) * | 2007-06-29 | 2009-10-01 | 주식회사 하이닉스반도체 | Method for Forming Fine Pattern of Semiconductor Device |
KR100876816B1 (en) * | 2007-06-29 | 2009-01-07 | 주식회사 하이닉스반도체 | Method for forming fine pattern of semiconductor device |
WO2009152276A2 (en) | 2008-06-10 | 2009-12-17 | University Of North Carolina At Charlotte | Photoacid generators and lithographic resists comprising the same |
US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
KR101037528B1 (en) | 2008-10-16 | 2011-05-26 | 주식회사 하이닉스반도체 | Method for Forming Pattern of Semiconductor Device |
JP6182864B2 (en) * | 2012-01-17 | 2017-08-23 | 住友化学株式会社 | Method for producing resist pattern |
JP6283477B2 (en) * | 2012-06-25 | 2018-02-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | Photoresist containing amide component |
JP2020536898A (en) | 2017-10-10 | 2020-12-17 | バイオジェン インコーポレイテッド | Process for preparing spiro derivatives |
CN108517219A (en) * | 2018-06-28 | 2018-09-11 | 深圳市华星光电技术有限公司 | A kind of liquid crystal material, the preparation method of display panel, display device |
CN113835296A (en) * | 2021-09-28 | 2021-12-24 | 之江实验室 | Femtosecond laser direct-writing photoresist composition |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3666473A (en) * | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
JPS5280022A (en) * | 1975-12-26 | 1977-07-05 | Fuji Photo Film Co Ltd | Light solubilizable composition |
NL8101200A (en) * | 1981-03-12 | 1982-10-01 | Philips Nv | METHOD FOR APPLYING A RESIST MATERIAL TO A CARRIER AND RESIST MATERIAL |
JPS58174944A (en) * | 1982-04-07 | 1983-10-14 | Toshiba Corp | Formation of pattern |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
JPH04363309A (en) * | 1991-06-11 | 1992-12-16 | Brother Ind Ltd | Photo-setting composition |
DE4124029A1 (en) * | 1991-07-19 | 1993-01-21 | Hoechst Ag | METHOD FOR PRODUCING ORGANIC COMPOUNDS CARRYING TERT.-BUTYLOXYCARBONYL GROUPS |
DE4126409A1 (en) * | 1991-08-09 | 1993-02-11 | Hoechst Ag | RADIATION-SENSITIVE MIXTURE WITH A POLYMERIC BINDING AGENT WITH UNITS OF (ALPHA) - (BETA) - UNSETTED CARBONIC ACIDS |
JPH06118630A (en) * | 1992-10-06 | 1994-04-28 | Tokyo Ohka Kogyo Co Ltd | Coating liquid composition for chemically amplified resist |
-
1995
- 1995-09-14 KR KR1019950030063A patent/KR0178475B1/en active IP Right Grant
-
1996
- 1996-09-12 US US08/713,085 patent/US5750680A/en not_active Expired - Fee Related
- 1996-09-13 GB GB9619234A patent/GB2305175B/en not_active Expired - Fee Related
- 1996-09-13 DE DE19637425A patent/DE19637425B4/en not_active Expired - Fee Related
- 1996-09-13 NL NL1004032A patent/NL1004032C2/en not_active IP Right Cessation
- 1996-09-14 TW TW085111278A patent/TW434460B/en not_active IP Right Cessation
- 1996-09-16 FR FR9611264A patent/FR2738820B1/en not_active Expired - Fee Related
- 1996-09-16 CN CNB961199059A patent/CN1152859C/en not_active Expired - Fee Related
- 1996-09-17 JP JP8245089A patent/JP2929526B2/en not_active Expired - Fee Related
-
1998
- 1998-02-19 US US09/026,169 patent/US5955606A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR0178475B1 (en) | 1999-03-20 |
CN1153775A (en) | 1997-07-09 |
DE19637425B4 (en) | 2006-04-13 |
FR2738820A1 (en) | 1997-03-21 |
JPH09216867A (en) | 1997-08-19 |
GB2305175A (en) | 1997-04-02 |
KR970015572A (en) | 1997-04-28 |
FR2738820B1 (en) | 1998-09-11 |
DE19637425A1 (en) | 1997-04-03 |
US5955606A (en) | 1999-09-21 |
GB9619234D0 (en) | 1996-10-23 |
NL1004032C2 (en) | 1997-05-21 |
NL1004032A1 (en) | 1997-03-20 |
CN1152859C (en) | 2004-06-09 |
US5750680A (en) | 1998-05-12 |
GB2305175B (en) | 1999-10-27 |
JP2929526B2 (en) | 1999-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW434460B (en) | Novel N-vinyllactam derivatives, polymer thereof, and photoresist composition containing the same | |
TW594411B (en) | Positive photoresist composition | |
JP3220745B2 (en) | Copolymer for photoresist, method for producing copolymer for photoresist, photoresist composition, method for forming photoresist pattern, and semiconductor device | |
JP4663075B2 (en) | Photoresist monomer and production method thereof, photoresist copolymer and production method thereof, and photoresist composition | |
JP2845225B2 (en) | Polymer compound, photosensitive resin composition and pattern forming method using the same | |
TW558674B (en) | Method for preparing novel resist | |
TWI226477B (en) | An oxabicyclo compound, a polymer-containing compound, and a photoresist micro pattern forming method using the same | |
US6051678A (en) | Copolymers containing N-vinyllactam derivatives, preparation methods thereof and photoresists therefrom | |
US20070148585A1 (en) | Hyperbranched polymer, production method therefor and resist composition containing hyperbranched polymer | |
TW499628B (en) | Carboxyl-containing alicyclic compounds and a process for preparing the same | |
TWI261730B (en) | Cross-linker monomer comprising double bond and photoresist copolymer containing the same | |
TW491875B (en) | Novel photoresist cross-linker and photoresist composition comprising the same | |
TW586049B (en) | Novel monomers for photoresist, polymers thereof, and photoresist compositions using the same | |
WO2007020734A1 (en) | Photoresist polymer having nano smoothness and etching resistance and resist composition | |
TW535033B (en) | Novel photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same | |
JP3835506B2 (en) | Copolymer resin for photoresist, photoresist composition, method for forming photoresist pattern, and method for manufacturing semiconductor device | |
TWI227377B (en) | Positive-type resist composition | |
TW574594B (en) | Photosensitive polymers and resist compositions comprising the photosensitive polymers | |
TW594401B (en) | Photoresist monomer, polymer thereof and photoresist composition containing the same | |
KR20000009572A (en) | New polymer and photoresist composition therefrom | |
TW572891B (en) | Novel photoresist monomers, polymers thereof, and photoresist compositions containing the same | |
TWI251115B (en) | Photoresist monomer, polymer thereof and photoresist composition containing it | |
TW594415B (en) | Dissolution inhibitor of chemically amplified photoresist and chemically amplified photoresist composition containing the same | |
TW589512B (en) | Ether monomers having multi-ring structure, and photosensitive polymer and resist compositions obtained from the same | |
TW473646B (en) | A photoresist resin and a photoresist composition containing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |