KR980002174A - 반사 방지 피복 조성물 - Google Patents

반사 방지 피복 조성물 Download PDF

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KR980002174A
KR980002174A KR1019970023707A KR19970023707A KR980002174A KR 980002174 A KR980002174 A KR 980002174A KR 1019970023707 A KR1019970023707 A KR 1019970023707A KR 19970023707 A KR19970023707 A KR 19970023707A KR 980002174 A KR980002174 A KR 980002174A
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carbon atoms
antireflective composition
formula
antireflective
group
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KR1019970023707A
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KR100729995B1 (ko
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로저 에프. 신타
티모씨 지. 애덤스
제임스 마이클 모리
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쉬플티 리차드 씨.
쉬플리 캄파니. 엘. 엘. 씨
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

본 발명은 심자외선 적용 분야에서 반사 조성물(ARC)로서 사용하기에 적합한 광 흡수 가교결합 조성물에 관한 것이다. 일반적으로, 본 발명의 ARC는 가교결합제와 조광시 반사되는 심자외선을 효율적으로 흡수하는 신규한 ARC 수지 결합제를 포함한다.

Description

반사 방지 피복 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (18)

  1. 퀴놀리닐 그룹, N, O 또는 S 환 치환체를 갖는 퀴놀리닐 유도체, 페난트레닐 그룹, 아크리딘 그룹 또는 알킬렌 안트라센 그룹을 포함하는 수지 결합제와 가교결합제를 포함하는, 상부피복된 포토레지스트 조성물과 함께 사용하기 위한 반사 방지 피복 조성물.
  2. 제1항에 있어서, 수지 결합제의 광학 밀도가 248nm에서 약 4단위/μ 이상인 반사 방지 조성물.
  3. 제1항에 있어서, 수지 결합제가 퀴놀리닐 그룹, N, O 또는 S환 치환체를 갖는 퀴놀리닐 유도체, 페난트레닐 그룹, 아크리신 그룹 또는 알킬렌 안트라센 그룹을 함유하는 단량체를 하나 이상 중합시킴으로써 형성되는 반사 방지 조성물.
  4. 제1항에 있어서, 수지 결합제가 다음 화학식(1)의 중합체를 포함하는 반사 방지 조성물.
    위의 화학식(1)에서 R 및 R1은 각각 독립적으로 수소 또는 탄소수 1 내지 약 8의 치환되거나 치환되지 않은 알킬 그룹이고, R2은 각각 독립적으로 탄소수 1 내지 약 10의 치환되거나 치환되지 않은 알킬이며, R3은 각각 독립적으로 할로겐, 탄소수 1 내지 약 8의 알킬, 탄소수 1 내지 약 8의 알콕시, 탄소수 2 내지 약 8의 알케닐, 탄소수 2 내지 약 8의 알키닐, 시아노 또는 니트로이고, m은 0 내지 9의 정수이며, x는 약 10 내지 약 80%이며, y는 약 5 내지 90%이다.
  5. 제4항에 있어서, R2가 하이드록시알킬인 반사 방지 조성물.
  6. 제4항에 있어서, x와 y의 합이 약 100%인 반사 방지 조성물.
  7. 제1항에 있어서, 수지 결합제가 다음 화학식(5)의 중합체를 포함하는 반사 방지 조성물.
    상기 화학식(5)에서, x와 y는 각 단위의 몰 분율이다.
  8. 제1항에 있어서, 수지 결합제가 다음 화학식(2)의 중합체를 포함하는 반사 방지 조성물.
    위의 화학식(2)에서, R4및 R5는 각각 독립적으로 수소 또는 탄소수 1 내지 약 8의 치환되거나 치환되지 않은 알킬 그룹이고, R6은 각각 독립적으로 탄소수 1내지 약 10, 더욱 바람직하게는 1 내지 약6의 치환된거나 치환되지 않은 알킬이며, W는 결합또는 탄소수 1 내지 약 4의 치환되거나 치환되지 않은 알킬렌이고, Z는 탄소, 질소, 산소 또는 황이며, R7은 각각 독립적으로 할로겐, 탄소수 1 내지 약 8의 알킬, 탄소수 1 내지 약 8의 알콕시, 탄소수 2 내지 약 8의 알케닐, 탄소수 2 내지 약 8의 알키닐, 시아노 또는 니트로이고, n은 0 내지 7의 정수이며, x′는 약 10 내지 약 80%이고, y′는 약 5 내지 약 90%이다.
  9. 제1항에 있어서, 수지 결합제가 다음 화학식(6)의 중합체를 포함하는 반사 방지 조성물.
    상기 화학식(6)에서 x와 y는 각 단위의 몰 분율이다.
  10. 제1항에 있어서, 가교결합제가 메톡시 메틸화된 글리코우릴인 반사 방지 조성물.
  11. 제1항에 있어서, 가교결합제가 화합물이 다음 화학식(3)의 구조를 갖은 반사 방지 조성물.
  12. 제1항에 있어서, 가교결합제가 폴리하이드록시 화합물인 반사 방지 조성물.
  13. 제12항에 있어서, 가교결합제가 하이드록시 하나 이상과 하이드록시 알킬 치환체 하나 이상을 갖는 방향족 화합물인 반사 방지 조성물.
  14. 제1항에 있어서, 산 또는 산 발생제 화합물을 추가로 포함하는 반사 방지 조성물.
  15. 제1항의 반사 방지 조성물의 피복층을 상부에 갖는 지지체와 반사 방지층 위에 포토레지스트의 피복층을 포함하는 피복된 지지체.
  16. 제1항의 반사 방지 조성물을 지지체 위에 도포한 단계(a), 할레이션 방지 조성물 층을 열 경화시키는 단계(b), 포토레지스트 조성물을 지지체 위에 도포하는 단계(c) 및 포토레지스트 층을 활성화 방사선에 노출시키고 노출된 포토레지스트 층을 현상하는 단계(d)를 포함하여, 포토레지스는 릴리프 상을 형성시키는 방법.
  17. 제16항에 있어서, 활성화 방사선이 심자외선 범위에 있고 포토레지스트가 노출시 설폰산을 발생시키는 방법.
  18. 제16항에 있어서, 반사 방지 조성물이 산 또는 열 산 발생제를 추가로 포함하고 필수적으로 광산 발생제 화합물이 없는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970023707A 1996-06-11 1997-06-10 반사방지피복조성물 KR100729995B1 (ko)

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Application Number Priority Date Filing Date Title
US08/665,019 1996-06-11
US08/665,019 US5886102A (en) 1996-06-11 1996-06-11 Antireflective coating compositions
US08/665019 1996-06-11

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KR980002174A true KR980002174A (ko) 1998-03-30
KR100729995B1 KR100729995B1 (ko) 2008-11-17

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US (2) US5886102A (ko)
EP (1) EP0813114B1 (ko)
JP (1) JP4145972B2 (ko)
KR (1) KR100729995B1 (ko)
DE (1) DE69727620T2 (ko)
TW (1) TW360700B (ko)

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KR101156973B1 (ko) * 2005-03-02 2012-06-20 주식회사 동진쎄미켐 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물
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JP4145972B2 (ja) 2008-09-03
TW360700B (en) 1999-06-11
KR100729995B1 (ko) 2008-11-17
JPH10204328A (ja) 1998-08-04
DE69727620D1 (de) 2004-03-25
DE69727620T2 (de) 2004-09-30
EP0813114B1 (en) 2004-02-18
EP0813114A2 (en) 1997-12-17

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