KR100832247B1 - 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법 - Google Patents
유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법 Download PDFInfo
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- KR100832247B1 KR100832247B1 KR1020020074262A KR20020074262A KR100832247B1 KR 100832247 B1 KR100832247 B1 KR 100832247B1 KR 1020020074262 A KR1020020074262 A KR 1020020074262A KR 20020074262 A KR20020074262 A KR 20020074262A KR 100832247 B1 KR100832247 B1 KR 100832247B1
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- reflective coating
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000000203 mixture Substances 0.000 title claims abstract description 45
- 230000003667 anti-reflective effect Effects 0.000 title description 6
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 68
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 23
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 21
- 239000002253 acid Substances 0.000 claims abstract description 20
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 18
- 239000006096 absorbing agent Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 11
- 230000002265 prevention Effects 0.000 claims abstract description 11
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 238000004132 cross linking Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 230000007261 regionalization Effects 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 239000008199 coating composition Substances 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 20
- 230000000694 effects Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000000052 comparative effect Effects 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 239000002904 solvent Substances 0.000 description 6
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 2
- MJYSISMEPNOHEG-UHFFFAOYSA-N anthracen-9-ylmethyl 2-methylprop-2-enoate Chemical compound C1=CC=C2C(COC(=O)C(=C)C)=C(C=CC=C3)C3=CC2=C1 MJYSISMEPNOHEG-UHFFFAOYSA-N 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- -1 2-hydroxyhexyl Chemical group 0.000 description 1
- XHPWRTXYJFNZAW-OWOJBTEDSA-N 5-azido-2-[(e)-2-(4-azido-2-sulfophenyl)ethenyl]benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC(N=[N+]=[N-])=CC=C1\C=C\C1=CC=C(N=[N+]=[N-])C=C1S(O)(=O)=O XHPWRTXYJFNZAW-OWOJBTEDSA-N 0.000 description 1
- BIZMDVFWYSXYEJ-UHFFFAOYSA-N Cc(cc1)ccc1S(OC(CCCC1)C1O)(=O)=O Chemical compound Cc(cc1)ccc1S(OC(CCCC1)C1O)(=O)=O BIZMDVFWYSXYEJ-UHFFFAOYSA-N 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 125000004036 acetal group Chemical group 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/10—Esters; Ether-esters
- C08K5/101—Esters; Ether-esters of monocarboxylic acids
- C08K5/105—Esters; Ether-esters of monocarboxylic acids with phenols
- C08K5/107—Esters; Ether-esters of monocarboxylic acids with phenols with polyphenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0041—Optical brightening agents, organic pigments
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
- C08L25/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/41—Compounds containing sulfur bound to oxygen
- C08K5/42—Sulfonic acids; Derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Paints Or Removers (AREA)
Abstract
Description
구분 | 가교제 (g) | 광흡수제 (g) | 열산발생제 (g) | 접착성 증가제(g) | 두께(Å) | 페턴 모양 |
실시예 1 | 0.18 | 0.63 | 0.05 | 0.15 | 592 | 양호 |
실시예 2 | 0.18 | 0.60 | 0.05 | 0.18 | 585 | 양호 |
실시예 3 | 0.18 | 0.57 | 0.05 | 0.20 | 588 | 양호 |
비교예 1 | 0.36 | 0.63 | 0.05 | - | 597 | 무너짐 |
비교예 2 | 0.30 | 0.60 | 0.05 | - | 587 | 무너짐 |
비교예 3 | 0.28 | 0.57 | 0.05 | - | 580 | 무너짐 |
Claims (11)
- 삭제
- (a) 제2항 기재의 유기 난반사 방지막 조성물을 피식각층 상부에 도포하는 단계;(b) 베이크 공정으로 상기 유기 난반사 방지막 조성물을 가교시켜 유기 난반사 방지막을 형성하는 단계;(c) 상기 유기 난반사 방지막 상부에 포토레지스트를 도포하고 노광 및 현상하여 포토레지시트 패턴을 형성하는 단계; 및(d) 상기 포토레지스트 패턴을 식각 마스크로 하여 유기 난반사 방지막을 식각하고, 피식각층을 식각하여 패턴을 형성하는 단계를 포함하는 패턴 형성방법.
- 제6항에 있어서,상기 (b) 단계의 베이크 공정은 150 내지 300 ℃에서 1 내지 5분간 수행되는 것을 특징으로 하는 패턴 형성방법.
- 제6항에 있어서,상기 (c) 단계의 노광 전 및 노광 후에 베이크 공정을 더욱 실시하는 것을 특징으로 하는 패턴 형성방법.
- 제8항에 있어서,상기 베이크 공정은 70 내지 200 ℃에서 수행되는 것을 특징으로 하는 패턴 형성방법.
- 제6항에 있어서,상기 (c) 단계의 노광 광원은 F2 레이저(157 ㎚), ArF(193 ㎚), KrF(248 ㎚) 또는 EUV(extremely ultraviolet)의 원자외선; E-빔; X-선; 또는 이온빔인 것을 특징으로 하는 패턴 형성방법.
- 제6항 내지 제10항 중 어느 한 항 기재의 방법으로 제조된 반도체 소자.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020074262A KR100832247B1 (ko) | 2002-11-27 | 2002-11-27 | 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법 |
EP03774253A EP1578855A4 (en) | 2002-11-27 | 2003-11-18 | ANTIREFECT COMPOSITION WITH ORGANIC LOWER PART AND METHOD OF FORMATION OF REASONS USING THE SAME |
PCT/KR2003/002479 WO2004048458A1 (en) | 2002-11-27 | 2003-11-18 | Organic bottom anti-reflective composition and patterning method using the same |
US10/536,512 US20060153987A1 (en) | 2002-11-27 | 2003-11-18 | Organic bottom anti-feflective composition and patterning method using the same |
CNB2003801043748A CN100379807C (zh) | 2002-11-27 | 2003-11-18 | 有机底层抗反射组合物及采用该组合物的构图方法 |
JP2004555097A JP4318642B2 (ja) | 2002-11-27 | 2003-11-18 | 有機乱反射防止膜組成物およびこれを利用したパターン形成方法 |
AU2003284724A AU2003284724A1 (en) | 2002-11-27 | 2003-11-18 | Organic bottom anti-reflective composition and patterning method using the same |
TW092133101A TWI313790B (en) | 2002-11-27 | 2003-11-25 | Organic bottom anti-reflective composition and patterning method using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020020074262A KR100832247B1 (ko) | 2002-11-27 | 2002-11-27 | 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법 |
Publications (2)
Publication Number | Publication Date |
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KR20040046350A KR20040046350A (ko) | 2004-06-05 |
KR100832247B1 true KR100832247B1 (ko) | 2008-05-28 |
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KR1020020074262A KR100832247B1 (ko) | 2002-11-27 | 2002-11-27 | 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20060153987A1 (ko) |
EP (1) | EP1578855A4 (ko) |
JP (1) | JP4318642B2 (ko) |
KR (1) | KR100832247B1 (ko) |
CN (1) | CN100379807C (ko) |
AU (1) | AU2003284724A1 (ko) |
TW (1) | TWI313790B (ko) |
WO (1) | WO2004048458A1 (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100611391B1 (ko) * | 2003-11-06 | 2006-08-11 | 주식회사 하이닉스반도체 | 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성 방법 |
EP1691238A3 (en) * | 2005-02-05 | 2009-01-21 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
KR100732763B1 (ko) * | 2005-10-31 | 2007-06-27 | 주식회사 하이닉스반도체 | 유기 반사 방지막 중합체, 이를 포함하는 유기 반사 방지막조성물 및 이를 이용한 포토레지스트의 패턴 형성 방법 |
JP4883286B2 (ja) * | 2006-08-01 | 2012-02-22 | 日産化学工業株式会社 | 傾斜構造を有するリソグラフィー用レジスト下層膜 |
US7666575B2 (en) * | 2006-10-18 | 2010-02-23 | Az Electronic Materials Usa Corp | Antireflective coating compositions |
JP4843710B2 (ja) | 2007-03-20 | 2011-12-21 | 富士通株式会社 | 導電性反射防止膜形成用材料、導電性反射防止膜の形成方法、レジストパターン形成方法、半導体装置、及び磁気ヘッド |
KR100974587B1 (ko) * | 2007-03-30 | 2010-08-06 | 주식회사 케맥스 | 반사 방지막 조성물 |
JPWO2010061774A1 (ja) * | 2008-11-27 | 2012-04-26 | 日産化学工業株式会社 | アウトガス発生が低減されたレジスト下層膜形成組成物 |
US8182978B2 (en) | 2009-02-02 | 2012-05-22 | International Business Machines Corporation | Developable bottom antireflective coating compositions especially suitable for ion implant applications |
US11069570B2 (en) | 2018-10-31 | 2021-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming an interconnect structure |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5939236A (en) * | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
KR20010026523A (ko) * | 1999-09-07 | 2001-04-06 | 박종섭 | 유기 난반사 방지막용 조성물과 이의 제조방법 |
KR20010089464A (ko) * | 1998-11-18 | 2001-10-06 | 데머 얀, 당코 제니아 떼. | 원자외선 포토레지스트용 반사 방지 조성물 |
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US6165697A (en) * | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
KR0129950B1 (ko) * | 1994-11-30 | 1998-04-03 | 김광호 | 반사방지막 조성물 |
US5886102A (en) * | 1996-06-11 | 1999-03-23 | Shipley Company, L.L.C. | Antireflective coating compositions |
US6323287B1 (en) * | 1999-03-12 | 2001-11-27 | Arch Specialty Chemicals, Inc. | Hydroxy-amino thermally cured undercoat for 193 NM lithography |
KR100533361B1 (ko) * | 1999-08-23 | 2005-12-06 | 주식회사 하이닉스반도체 | 유기 난반사 방지막 중합체 및 그의 제조방법 |
KR100574482B1 (ko) * | 1999-09-07 | 2006-04-27 | 주식회사 하이닉스반도체 | 유기 난반사 방지막용 조성물과 이의 제조방법 |
KR100355604B1 (ko) * | 1999-12-23 | 2002-10-12 | 주식회사 하이닉스반도체 | 난반사 방지막용 중합체와 그 제조방법 |
KR100549574B1 (ko) * | 1999-12-30 | 2006-02-08 | 주식회사 하이닉스반도체 | 유기 반사 방지막용 중합체 및 그의 제조방법 |
JP3795333B2 (ja) * | 2000-03-30 | 2006-07-12 | 東京応化工業株式会社 | 反射防止膜形成用組成物 |
TW576859B (en) * | 2001-05-11 | 2004-02-21 | Shipley Co Llc | Antireflective coating compositions |
KR20030059970A (ko) * | 2002-01-04 | 2003-07-12 | 주식회사 몰커스 | 패턴 무너짐 현상을 극복하기 위한 유기 난반사 방지막조성물 및 이를 이용한 패턴 형성방법 |
KR100480235B1 (ko) * | 2002-07-18 | 2005-04-06 | 주식회사 하이닉스반도체 | 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법 |
-
2002
- 2002-11-27 KR KR1020020074262A patent/KR100832247B1/ko active IP Right Grant
-
2003
- 2003-11-18 EP EP03774253A patent/EP1578855A4/en not_active Withdrawn
- 2003-11-18 AU AU2003284724A patent/AU2003284724A1/en not_active Abandoned
- 2003-11-18 JP JP2004555097A patent/JP4318642B2/ja not_active Expired - Fee Related
- 2003-11-18 WO PCT/KR2003/002479 patent/WO2004048458A1/en active Application Filing
- 2003-11-18 US US10/536,512 patent/US20060153987A1/en not_active Abandoned
- 2003-11-18 CN CNB2003801043748A patent/CN100379807C/zh not_active Expired - Lifetime
- 2003-11-25 TW TW092133101A patent/TWI313790B/zh not_active IP Right Cessation
Patent Citations (3)
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US5939236A (en) * | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
KR20010089464A (ko) * | 1998-11-18 | 2001-10-06 | 데머 얀, 당코 제니아 떼. | 원자외선 포토레지스트용 반사 방지 조성물 |
KR20010026523A (ko) * | 1999-09-07 | 2001-04-06 | 박종섭 | 유기 난반사 방지막용 조성물과 이의 제조방법 |
Also Published As
Publication number | Publication date |
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TW200413850A (en) | 2004-08-01 |
CN100379807C (zh) | 2008-04-09 |
JP4318642B2 (ja) | 2009-08-26 |
EP1578855A4 (en) | 2007-10-24 |
US20060153987A1 (en) | 2006-07-13 |
KR20040046350A (ko) | 2004-06-05 |
CN1735655A (zh) | 2006-02-15 |
WO2004048458A1 (en) | 2004-06-10 |
JP2006508388A (ja) | 2006-03-09 |
TWI313790B (en) | 2009-08-21 |
AU2003284724A1 (en) | 2004-06-18 |
EP1578855A1 (en) | 2005-09-28 |
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