KR970077555A - 적층형 버텀 리드 패키지 - Google Patents
적층형 버텀 리드 패키지 Download PDFInfo
- Publication number
- KR970077555A KR970077555A KR1019960016640A KR19960016640A KR970077555A KR 970077555 A KR970077555 A KR 970077555A KR 1019960016640 A KR1019960016640 A KR 1019960016640A KR 19960016640 A KR19960016640 A KR 19960016640A KR 970077555 A KR970077555 A KR 970077555A
- Authority
- KR
- South Korea
- Prior art keywords
- lead package
- package according
- bottom lead
- lead
- stacked bottom
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- 229910000679 solder Inorganic materials 0.000 claims 3
- 239000004642 Polyimide Substances 0.000 claims 2
- 239000000853 adhesive Substances 0.000 claims 2
- 230000001070 adhesive effect Effects 0.000 claims 2
- 238000000465 moulding Methods 0.000 claims 2
- 229920001721 polyimide Polymers 0.000 claims 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000007689 inspection Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73257—Bump and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
본 발명은 적층형 버텀 리드 패키지에 관한 것으로, 종래의 버텀 리드 패키지는 금속 와이어를 이용하여 전기적인 연결을 함으로서 패키지의 경박단소화에 한계가 있는 등의 문제점이 있었던 바, 본 발명 적층형 버텀 리드 패키지는 금속 와이어를 이용하여 전기적인 연결을 하는 와이어 본딩을 배제함으로서 고집적화되는 효과가 있으며, 상, 하부 리드의 양단부를 돌출시켜 접속부를 형성함으로서 패키지의 전기적인 검사가 용이한 효과가 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명 적층형 버텀 리드 패키지의 구조를 보인 종단면도
Claims (6)
- 제1 및 제2반도체 칩과. 그 제1 및 제2반도체 칩의 상, 하면 양측에 설치되며 돌기부가 각각 형성된 다수개의 상, 하부 리드와, 상기 돌기부와 상기 반도체 칩의 상면에 형성된 다수개의 칩패드를 각각 연결하는 솔더와, 상기 상부 리드와 하부 리드 사이에 개재되는 접착부재와, 상기 다수개의 리드에 형성된 돌출부가 외부로 노출됨과 아울러 상기 반도체 칩, 상, 하부 리드를 감싸도록 몰딩한 몰딩부를 구비하여서 구성된 것을 특징으로 하는 적층형 버텀 리드 패키지.
- 제1항에 있어서, 상기 칩패드와 돌기부가 접속된 부분을 제외한 제1 및 제2반도체 칩의 상면에는 두꺼운 폴리이미드 층이 형성된 것을 특징으로 하는 적층형 버텀 리드 패키지.
- 제1항에 있어서, 상기 접착부재는 솔더인 것을 특징으로 하는 것을 특징으로 하는 적층형 버텀 리드 패키지
- 제1항에 있어서, 상기 접착부재는 폴리이미드인 것을 특징으로 하는 것을 특징으로 하는 적층형 버텀 리드 패키지.
- 제1항에 있어서, 상기 돌출부에는 솔더가 플래덩된 것을 특징으로 하는 것을 특징으로 하는 적층형 버텀 리드 패키지.
- 제1항에 있어서, 상기 몰딩부의 양측에는 상, 하부 리드가 연장되어 돌출형성된 접속부가 형성된 것을 특징으로 하는 적층형 버텀 리드 패키지.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960016640A KR100186309B1 (ko) | 1996-05-17 | 1996-05-17 | 적층형 버텀 리드 패키지 |
DE1997116668 DE19716668C2 (de) | 1996-05-17 | 1997-04-21 | Halbleiterchip-Stapelgehäuse mit untenliegenden Zuleitungen |
CN97104301A CN1064780C (zh) | 1996-05-17 | 1997-05-04 | 底部引线半导体芯片堆式封装 |
JP9119047A JP2819285B2 (ja) | 1996-05-17 | 1997-05-09 | 積層型ボトムリード半導体パッケージ |
US08/856,317 US5939779A (en) | 1996-05-17 | 1997-05-14 | Bottom lead semiconductor chip stack package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960016640A KR100186309B1 (ko) | 1996-05-17 | 1996-05-17 | 적층형 버텀 리드 패키지 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970077555A true KR970077555A (ko) | 1997-12-12 |
KR100186309B1 KR100186309B1 (ko) | 1999-03-20 |
Family
ID=19459003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960016640A KR100186309B1 (ko) | 1996-05-17 | 1996-05-17 | 적층형 버텀 리드 패키지 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5939779A (ko) |
JP (1) | JP2819285B2 (ko) |
KR (1) | KR100186309B1 (ko) |
CN (1) | CN1064780C (ko) |
DE (1) | DE19716668C2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100721468B1 (ko) * | 1998-06-01 | 2007-05-23 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치의 제조 방법 |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3937265B2 (ja) | 1997-09-29 | 2007-06-27 | エルピーダメモリ株式会社 | 半導体装置 |
KR100285664B1 (ko) * | 1998-05-15 | 2001-06-01 | 박종섭 | 스택패키지및그제조방법 |
US6143981A (en) | 1998-06-24 | 2000-11-07 | Amkor Technology, Inc. | Plastic integrated circuit package and method and leadframe for making the package |
KR100304959B1 (ko) | 1998-10-21 | 2001-09-24 | 김영환 | 칩 적층형 반도체 패키지 및 그 제조방법 |
US6063648A (en) * | 1998-10-29 | 2000-05-16 | Tessera, Inc. | Lead formation usings grids |
KR20010037247A (ko) * | 1999-10-15 | 2001-05-07 | 마이클 디. 오브라이언 | 반도체패키지 |
KR100421774B1 (ko) * | 1999-12-16 | 2004-03-10 | 앰코 테크놀로지 코리아 주식회사 | 반도체패키지 및 그 제조 방법 |
US6762067B1 (en) * | 2000-01-18 | 2004-07-13 | Fairchild Semiconductor Corporation | Method of packaging a plurality of devices utilizing a plurality of lead frames coupled together by rails |
KR100335717B1 (ko) * | 2000-02-18 | 2002-05-08 | 윤종용 | 고용량 메모리 카드 |
US7042068B2 (en) | 2000-04-27 | 2006-05-09 | Amkor Technology, Inc. | Leadframe and semiconductor package made using the leadframe |
US6197618B1 (en) * | 2000-05-04 | 2001-03-06 | General Semiconductor Ireland | Semiconductor device fabrication using adhesives |
KR100379600B1 (ko) * | 2000-08-14 | 2003-04-10 | 삼성전자주식회사 | 듀얼 칩 패키지의 제조 방법 |
KR100646971B1 (ko) * | 2000-12-07 | 2006-11-17 | 주식회사 하이닉스반도체 | 스택 패키지 제조용 스텐실의 구조 |
US6545345B1 (en) | 2001-03-20 | 2003-04-08 | Amkor Technology, Inc. | Mounting for a package containing a chip |
KR20030018642A (ko) | 2001-08-30 | 2003-03-06 | 주식회사 하이닉스반도체 | 스택 칩 모듈 |
KR100447869B1 (ko) * | 2001-12-27 | 2004-09-08 | 삼성전자주식회사 | 다핀 적층 반도체 칩 패키지 및 이에 사용되는 리드 프레임 |
KR100422359B1 (ko) * | 2002-03-07 | 2004-03-11 | 주식회사 하이닉스반도체 | 원통형 반도체 패키지 및 그를 이용한 케이블형 패키지 모듈 |
US6608366B1 (en) | 2002-04-15 | 2003-08-19 | Harry J. Fogelson | Lead frame with plated end leads |
US7132311B2 (en) * | 2002-07-26 | 2006-11-07 | Intel Corporation | Encapsulation of a stack of semiconductor dice |
US6905914B1 (en) | 2002-11-08 | 2005-06-14 | Amkor Technology, Inc. | Wafer level package and fabrication method |
US7723210B2 (en) | 2002-11-08 | 2010-05-25 | Amkor Technology, Inc. | Direct-write wafer level chip scale package |
US6798047B1 (en) | 2002-12-26 | 2004-09-28 | Amkor Technology, Inc. | Pre-molded leadframe |
US6750545B1 (en) | 2003-02-28 | 2004-06-15 | Amkor Technology, Inc. | Semiconductor package capable of die stacking |
US6794740B1 (en) | 2003-03-13 | 2004-09-21 | Amkor Technology, Inc. | Leadframe package for semiconductor devices |
US6879034B1 (en) | 2003-05-01 | 2005-04-12 | Amkor Technology, Inc. | Semiconductor package including low temperature co-fired ceramic substrate |
JP3693057B2 (ja) * | 2003-07-04 | 2005-09-07 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US7148564B2 (en) * | 2004-02-17 | 2006-12-12 | Delphi Technologies, Inc. | Dual-sided substrate integrated circuit package including a leadframe having leads with increased thickness |
JP2005277114A (ja) * | 2004-03-25 | 2005-10-06 | Sanyo Electric Co Ltd | 半導体装置 |
US6972372B1 (en) * | 2004-05-28 | 2005-12-06 | Macronix International Co., Ltd. | Method and apparatus for stacking electrical components using outer lead portions and exposed inner lead portions to provide interconnection |
US7202105B2 (en) * | 2004-06-28 | 2007-04-10 | Semiconductor Components Industries, L.L.C. | Multi-chip semiconductor connector assembly method |
DE102004041889B4 (de) * | 2004-08-30 | 2006-06-29 | Infineon Technologies Ag | Halbleitervorrichtung mit gestapelten Halbleiterbauelementen und Verfahren zu deren Herstellung |
US7408244B2 (en) * | 2005-03-16 | 2008-08-05 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and stack arrangement thereof |
US7098073B1 (en) | 2005-04-18 | 2006-08-29 | Freescale Semiconductor, Inc. | Method for stacking an integrated circuit on another integrated circuit |
US7196427B2 (en) * | 2005-04-18 | 2007-03-27 | Freescale Semiconductor, Inc. | Structure having an integrated circuit on another integrated circuit with an intervening bent adhesive element |
JP4551321B2 (ja) * | 2005-07-21 | 2010-09-29 | 新光電気工業株式会社 | 電子部品実装構造及びその製造方法 |
US20070029648A1 (en) * | 2005-08-02 | 2007-02-08 | Texas Instruments Incorporated | Enhanced multi-die package |
KR100631959B1 (ko) * | 2005-09-07 | 2006-10-04 | 주식회사 하이닉스반도체 | 적층형 반도체 패키지 및 그 제조방법 |
US7361531B2 (en) * | 2005-11-01 | 2008-04-22 | Allegro Microsystems, Inc. | Methods and apparatus for Flip-Chip-On-Lead semiconductor package |
US7572681B1 (en) | 2005-12-08 | 2009-08-11 | Amkor Technology, Inc. | Embedded electronic component package |
CN101361221A (zh) * | 2006-04-28 | 2009-02-04 | 株式会社东芝 | 高频用半导体装置 |
US7902660B1 (en) | 2006-05-24 | 2011-03-08 | Amkor Technology, Inc. | Substrate for semiconductor device and manufacturing method thereof |
US7968998B1 (en) | 2006-06-21 | 2011-06-28 | Amkor Technology, Inc. | Side leaded, bottom exposed pad and bottom exposed lead fusion quad flat semiconductor package |
TWI352416B (en) * | 2006-09-12 | 2011-11-11 | Chipmos Technologies Inc | Stacked chip package structure with unbalanced lea |
KR100910223B1 (ko) | 2006-09-29 | 2009-07-31 | 주식회사 하이닉스반도체 | 적층 반도체 패키지 |
US8847413B2 (en) * | 2007-01-15 | 2014-09-30 | Stats Chippac Ltd. | Integrated circuit package system with leads having multiple sides exposed |
JP5147295B2 (ja) * | 2007-05-31 | 2013-02-20 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
US7834464B2 (en) | 2007-10-09 | 2010-11-16 | Infineon Technologies Ag | Semiconductor chip package, semiconductor chip assembly, and method for fabricating a device |
US7882482B2 (en) * | 2007-10-12 | 2011-02-01 | Monolithic Power Systems, Inc. | Layout schemes and apparatus for high performance DC-DC output stage |
US20090127676A1 (en) * | 2007-11-16 | 2009-05-21 | Gomez Jocel P | Back to Back Die Assembly For Semiconductor Devices |
US8796561B1 (en) | 2009-10-05 | 2014-08-05 | Amkor Technology, Inc. | Fan out build up substrate stackable package and method |
US8937381B1 (en) | 2009-12-03 | 2015-01-20 | Amkor Technology, Inc. | Thin stackable package and method |
US9691734B1 (en) | 2009-12-07 | 2017-06-27 | Amkor Technology, Inc. | Method of forming a plurality of electronic component packages |
US8372692B2 (en) * | 2010-01-27 | 2013-02-12 | Marvell World Trade Ltd. | Method of stacking flip-chip on wire-bonded chip |
US8324511B1 (en) | 2010-04-06 | 2012-12-04 | Amkor Technology, Inc. | Through via nub reveal method and structure |
US8294276B1 (en) | 2010-05-27 | 2012-10-23 | Amkor Technology, Inc. | Semiconductor device and fabricating method thereof |
US8440554B1 (en) | 2010-08-02 | 2013-05-14 | Amkor Technology, Inc. | Through via connected backside embedded circuit features structure and method |
US20120049334A1 (en) * | 2010-08-27 | 2012-03-01 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming Leadframe as Vertical Interconnect Structure Between Stacked Semiconductor Die |
US8487445B1 (en) | 2010-10-05 | 2013-07-16 | Amkor Technology, Inc. | Semiconductor device having through electrodes protruding from dielectric layer |
US8791501B1 (en) | 2010-12-03 | 2014-07-29 | Amkor Technology, Inc. | Integrated passive device structure and method |
CN102569099B (zh) * | 2010-12-28 | 2014-12-10 | 万国半导体(开曼)股份有限公司 | 一种倒装芯片的封装方法 |
US8390130B1 (en) | 2011-01-06 | 2013-03-05 | Amkor Technology, Inc. | Through via recessed reveal structure and method |
US8552548B1 (en) | 2011-11-29 | 2013-10-08 | Amkor Technology, Inc. | Conductive pad on protruding through electrode semiconductor device |
US8629539B2 (en) | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
US9048298B1 (en) | 2012-03-29 | 2015-06-02 | Amkor Technology, Inc. | Backside warpage control structure and fabrication method |
US9129943B1 (en) | 2012-03-29 | 2015-09-08 | Amkor Technology, Inc. | Embedded component package and fabrication method |
US9041188B2 (en) | 2012-11-10 | 2015-05-26 | Vishay General Semiconductor Llc | Axial semiconductor package |
CN103745964A (zh) * | 2013-12-05 | 2014-04-23 | 南通富士通微电子股份有限公司 | 封装结构 |
CN103730444B (zh) * | 2014-01-20 | 2017-06-27 | 矽力杰半导体技术(杭州)有限公司 | 封装组件及其制造方法 |
JP6162643B2 (ja) | 2014-05-21 | 2017-07-12 | 三菱電機株式会社 | 半導体装置 |
US9564387B2 (en) * | 2014-08-28 | 2017-02-07 | UTAC Headquarters Pte. Ltd. | Semiconductor package having routing traces therein |
JP7046368B2 (ja) * | 2016-03-10 | 2022-04-04 | 学校法人早稲田大学 | 電極接続構造、リードフレーム及び電極接続構造の形成方法 |
CN110190035A (zh) * | 2019-04-26 | 2019-08-30 | 江苏长电科技股份有限公司 | 一种基板和框架混合的三维系统级封装结构及其工艺方法 |
US10991644B2 (en) | 2019-08-22 | 2021-04-27 | Allegro Microsystems, Llc | Integrated circuit package having a low profile |
CN114300369A (zh) * | 2022-03-10 | 2022-04-08 | 绍兴中芯集成电路制造股份有限公司 | 半导体封装结构的制作方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3978516A (en) * | 1974-01-02 | 1976-08-31 | Texas Instruments Incorporated | Lead frame assembly for a packaged semiconductor microcircuit |
US5530292A (en) * | 1990-03-15 | 1996-06-25 | Fujitsu Limited | Semiconductor device having a plurality of chips |
US5296737A (en) * | 1990-09-06 | 1994-03-22 | Hitachi, Ltd. | Semiconductor device with a plurality of face to face chips |
US5172214A (en) * | 1991-02-06 | 1992-12-15 | Motorola, Inc. | Leadless semiconductor device and method for making the same |
US5331235A (en) * | 1991-06-01 | 1994-07-19 | Goldstar Electron Co., Ltd. | Multi-chip semiconductor package |
KR950012658B1 (ko) * | 1992-07-24 | 1995-10-19 | 삼성전자주식회사 | 반도체 칩 실장방법 및 기판 구조체 |
KR0128251Y1 (ko) * | 1992-08-21 | 1998-10-15 | 문정환 | 리드 노출형 반도체 조립장치 |
US5479051A (en) * | 1992-10-09 | 1995-12-26 | Fujitsu Limited | Semiconductor device having a plurality of semiconductor chips |
KR960005042B1 (ko) * | 1992-11-07 | 1996-04-18 | 금성일렉트론주식회사 | 반도체 펙케지 |
JP2960283B2 (ja) * | 1993-06-14 | 1999-10-06 | 株式会社東芝 | 樹脂封止型半導体装置の製造方法と、この製造方法に用いられる複数の半導体素子を載置するためのリードフレームと、この製造方法によって製造される樹脂封止型半導体装置 |
KR970010678B1 (ko) * | 1994-03-30 | 1997-06-30 | 엘지반도체 주식회사 | 리드 프레임 및 이를 이용한 반도체 패키지 |
US5429992A (en) * | 1994-05-25 | 1995-07-04 | Texas Instruments Incorporated | Lead frame structure for IC devices with strengthened encapsulation adhesion |
US5677567A (en) * | 1996-06-17 | 1997-10-14 | Micron Technology, Inc. | Leads between chips assembly |
-
1996
- 1996-05-17 KR KR1019960016640A patent/KR100186309B1/ko not_active IP Right Cessation
-
1997
- 1997-04-21 DE DE1997116668 patent/DE19716668C2/de not_active Expired - Fee Related
- 1997-05-04 CN CN97104301A patent/CN1064780C/zh not_active Expired - Fee Related
- 1997-05-09 JP JP9119047A patent/JP2819285B2/ja not_active Expired - Fee Related
- 1997-05-14 US US08/856,317 patent/US5939779A/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100721468B1 (ko) * | 1998-06-01 | 2007-05-23 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치의 제조 방법 |
KR100753723B1 (ko) * | 1998-06-01 | 2007-08-30 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
CN1166057A (zh) | 1997-11-26 |
JP2819285B2 (ja) | 1998-10-30 |
KR100186309B1 (ko) | 1999-03-20 |
DE19716668A1 (de) | 1997-11-20 |
DE19716668C2 (de) | 1999-05-27 |
US5939779A (en) | 1999-08-17 |
CN1064780C (zh) | 2001-04-18 |
JPH1056129A (ja) | 1998-02-24 |
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