KR960039156A - 반도체장치 및 배선방법 - Google Patents

반도체장치 및 배선방법 Download PDF

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KR960039156A
KR960039156A KR1019960012891A KR19960012891A KR960039156A KR 960039156 A KR960039156 A KR 960039156A KR 1019960012891 A KR1019960012891 A KR 1019960012891A KR 19960012891 A KR19960012891 A KR 19960012891A KR 960039156 A KR960039156 A KR 960039156A
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layer
semiconductor device
iridium
wiring portion
element region
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KR1019960012891A
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KR100468114B1 (ko
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다카시 나카무라
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사토켄이치로
로무 주식회사
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Priority to KR1020040076155A priority Critical patent/KR100525133B1/ko
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Publication of KR100468114B1 publication Critical patent/KR100468114B1/ko

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 반도체장치 및 반도체소자의 배선방법에 관한 것으로, 층간절연막(12)의 위 및 개구부(14)의 내부에는 이리디움층(16)이 설치되고, 이 이리디움층(16)은 캐파시터의 하부전극(16a)이 되는 부분과 드레인영역(6)과의 콘택트를 위한 배선(16b)가 되는 부분으로 구성되어 있으며, 이리디움층(16)의 하부전극(16a)의 부분위에는 PZT로 된 강유전체층(18)이 형성되는 한편, 그 위에는 상부전극으로서 이리디움층(20)이 설치되어 있어, 이리디움은 알루미늄보다도 융점이 높기 때문에 이리디움층(16)을 형성한 후에 PZT를 위한 열처리를 행하더라도 이리디움이 용융될 우려가 없고, 또한 이리디움은 실리콘과의 반응성이 낮기 때문에 계면에 있어서 불필요한 실리콘화합물이 생성되지 않으면서도 양호한 콘택트를 얻을 수 있다.

Description

반도체장치 및 배선방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 따른 반도체장치의 일례를 도시한 도면.

Claims (9)

  1. 반도체소자영역과, 상기 반도체소자영역에 접속된 배선부를 구비한 반도체장치에 있어서, 상기 배선부를 이리디움에 의해 형성된 것을 특징으로 하는 반도체장치.
  2. 반도체소자영역과, 상기 반도체소장영역에 접속된 배선부를 구비한 반도체장치에 있어서, 상기 배선부를 산화이리디움에 의해 형성된 것을 특징으로 하는 반도체장치.
  3. 제2항에 있어서, 상기 산화이리디움이 산소가 결핍한 상태로 형성되어 있는 것을 특징으로 하는 반도체장치.
  4. 반도체소자영역과, 상기 반도체소자영역에 접속된 배선부를 구비한 반도체장치에 있어서, 상기 배선부를 배리어층과 주도전층에 의해 구성하고, 상기 배리어층을 산화이리디움에 의해서 형성한 것을 특징으로 하는 반도체장치.
  5. 제4항에 있어서, 상기 주도전층이 이리둠인 것을 특징으로 하는 반도체장치.
  6. 제4항에 있어서, 상기 산화이리디움은 산소가 결핍한 상태로 형성되어 있는 것을 특징으로 하는 반도체장치.
  7. 반도체장치의 배선방법에 있어서, 반도체소자영역에 접속된 배선부를 형성할 때에 반도체소자영역에 접촉하도록 산화이리디움층을 배리어층으로서 형성하고, 당해 배리어층의 위에 주도전층을 형성하도록 한 것을 특징으로 하는 반도체장치의 배선방법.
  8. 반도체장치의 배선방법에 있어서, 반도체소자영역에 접속되는 배선부를 형성할 때에 반소제소자영역에 접속하도록 산화이리디움층을 배리어층으로서 형성하고, 당해 배리어층의 위에 주도전층을 형성하도록 한 것을 특징으로 하는 반도체장치의 배선방법.
  9. 유전체를 구비한 소자에 있어서, 당해 유전체의 바로아래에 형성된 유전층으로부터 연장하여 배선부를 일체로 형성함과 아울러 도전층 및 배선불 이리디움 또는 산화이리디움에 의해서 형성된 것을 특징으로 하는 반도체소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960012891A 1995-04-28 1996-04-25 반도체장치 KR100468114B1 (ko)

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KR1020040076155A KR100525133B1 (ko) 1995-04-28 2004-09-22 반도체장치 및 배선방법

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JP10558995A JP3526651B2 (ja) 1995-04-28 1995-04-28 半導体装置および配線方法
JP1995-105589 1995-04-28

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KR100468114B1 KR100468114B1 (ko) 2005-05-19

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EP (1) EP0740342B1 (ko)
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DE (1) DE69630556T2 (ko)

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JP3028080B2 (ja) * 1997-06-18 2000-04-04 日本電気株式会社 半導体装置の構造およびその製造方法
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JP3114710B2 (ja) 1998-11-30 2000-12-04 日本電気株式会社 強誘電体メモリ及びその製造方法
JP3323847B2 (ja) 1999-02-22 2002-09-09 キヤノン株式会社 電子放出素子、電子源および画像形成装置の製造方法
US6900487B2 (en) * 2001-06-29 2005-05-31 Oki Electric Industry Co., Ltd. Wiring layer structure for ferroelectric capacitor
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Publication number Publication date
JP3526651B2 (ja) 2004-05-17
DE69630556T2 (de) 2004-09-23
US5841160A (en) 1998-11-24
JPH08306722A (ja) 1996-11-22
KR100468114B1 (ko) 2005-05-19
EP0740342A3 (en) 1997-10-29
EP0740342B1 (en) 2003-11-05
DE69630556D1 (de) 2003-12-11
KR100525133B1 (ko) 2005-11-01
EP0740342A2 (en) 1996-10-30

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