KR940003071A - 트렌치 기술을 이용한 에지 종단을 갖는 고전압 트랜지스터 - Google Patents

트렌치 기술을 이용한 에지 종단을 갖는 고전압 트랜지스터 Download PDF

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KR940003071A
KR940003071A KR1019930013624A KR930013624A KR940003071A KR 940003071 A KR940003071 A KR 940003071A KR 1019930013624 A KR1019930013624 A KR 1019930013624A KR 930013624 A KR930013624 A KR 930013624A KR 940003071 A KR940003071 A KR 940003071A
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field
transistor
trench
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high voltage
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아이작 벤쿠야
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리차드 제이. 컬
실리코닉스 인코오포레이티드
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Ceramic Engineering (AREA)
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Abstract

수직 DMOS 파워 트랜지스터 또는 고전압 바이폴라 트랜지스터에 있어서, 활성 트랜지스터 셀들을 둘러싸는 다이의 둘레에서 에지 종단은 다수의 이격된 필드링들을 구비한다. 트렌치는 각각 인접된 필드링들 사이에 위치 하고 필드링의 측벽상에 형성된 이산화물 토는 이산화물 충전재에 의해 절연된다.
절연된 트렌치들은 필드링들을 서로 매우 밀접하게 이격되게 한다.
바람직하게도, 트렌치들은 트랜지스터의 활성부의 게이트 전극을 트렌칭하는 단계와 동일한 공정 단계에서 형성될 수 있다. 이와같은 구조체로 인해 종래의 필드 플레이트 종단을 지지하는 두꺼운 필드 이산화물을 제조할 필요성이 없어지게 되고 이로써 괼드 플레이트 종단을 필요로 하지 않는 트랜지스터의 제조를 가능케 되며, 여기서 다수의 필드링들은 20내지 150볼트의 항복 전압을 갖는 트랜지스터 장치에 적합하다. 유리하게도, 트렌치들은 저저항성 반도체 재료를 갖는 다수의 필드링 종단들의 이용에 대한 공정 감도를 제거해준다.

Description

트렌치 기술을 이용한 에지 종단을 갖는 고전압 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 필드링과 트렌치들을 구비한 에지 종단의 단면도.
제4a도는 본 발명에 따른 필드링과 트렌치들의 또다른 실시예의 단면도.
제4b도는 본 발명에 따른 괼드링과 트렌치들의 또다른 실시예의 단면도.
제4c도는 본 발명에 따른 필드링, 트렌치 및 필드 플레이트의 또다른 실시예의 단면도.
제5a-5j도는 본 발명에 따른 공정 단계들의 단면도.

Claims (12)

  1. 기판에 형성된 두개 이상의 도핑된 영역 및 게이트 전극을 갖는 하나 이상의 트랜지스터틀 구비하는 고전압 트랜지스터 구조체에 있어서, 모두 기판에 형성되고 측면에서 트랜지스터를 둘러싸는 적어도 제1의 필드링 및 제2의 필드링으로 부터 이격된 제2의 필드링과: 상기 제1의 필드링과 제2의 필드링 사이의 기판 공정에 형성되고 측면에서 트랜지스터률 둘러싸는 제1의 절연 트렌치를 포함하는 것을 특징으로 하는 고전압 트랜지스터 구조체.
  2. 제1항에 있어서, 절연충은 상기 트렌치의 측벽상에 형성되고 상기 트렌치는 전도 재료로 충전되는 것을 특징으로 하는 고전압 트랜지스터 구조체,
  3. 제1항에 있어서, 상기 제1 및 제2의 필드링은 트렌치의 깊이보다 더 깊게 기판내로 확장되는 것을 륵징으로 하는 고전압 트랜지스터 구조체.
  4. 제1항에 있어서, 상기 기판 위에 형성되고 상기 두 필드링들을 측면에서 둘러싸는 전도 보호링을 추가로 포함하는 것을 특징으로 하는 고진압 트랜지스터 구조체
  5. 제1항에 있어서, 상기 두 필드링들은 도핑된 영역인 것을 특징으로 하는 고전압 트랜지스터 구조체.
  6. 제1항에 있어서, 상기 트랜지스터는 전계 효과 트랜지스터이고 또한 심부 보디 영역을 포함하며, 상기 트랜지스터의 게이트 전극은 게이트 트렌치 내에 형성되며, 상기 필드링들의 깊이 및 도핑 레벨은 상기 심부 보다 영역의 깊이 및 도핑 레벨과 동일하며, 상기 절연 트렌치의 깊이는 상기 게이트 트렌치의 깊이와 동일한 것을 특징으로 하는 고전압 트랜지스터 구조체.
  7. 제1항에 있어서, 기판에 형성되고 상기 제1 및 제2의 필드링들을 측면에서 둘러싸는 제3의 필드링과: 상기 제1의 필드링과 제2의 필드링 사이의 기판내에 형성된 제2의 절연 트렌치를 추가로 포함하는 것을 특징으로 하는 고전압 트랜지스터 구조체.
  8. 제7항에 있어서, 상기 제1의 절연 트렌치는 상기 게이트 전극에 전기적으로 접속된 전도 재료로 층전되는 것을 특징으로 하는 고전압 트랜지스터 구조체.
  9. 기판에 형성된 두개 이상의 도핑된 영역을 갖는 하나이상의 활성 트랜지스터를 구비하는 트랜지스터 구조체에 있어서, 기판내에 형성되고 상기 활성 트랜지스터률 측면에서 둘러싸며, 서로간에 이격되어 있는 하나이상의 환상 필드링과; 상기 제1의 필드링과 상기 활성 트랜지스터 사이의 기판 공간에 형성되고 상기 활성 트랜지스터를 측면에서 둘러싸는 환상 절연 트렌치를 포함하는 것을 특징으로 하는 트랜지스터 구조체.
  10. 제9항에 있어서, 상기 필드링은 상기 기관내에 서로 상이한 깊이로 확장되는 두부분을 구비하고, 상기 필드링을 구비하는 기판부의 윗부분을 덮는 필드 플레이를 추가로 포함하는 것을 특징으로 하는 트랜지스터 구조체.
  11. 트랜지스터를 구비하는 고전압 트랜지스터 구조체를 기판내에 형성하는 방법에 있어서, 상기 전계 효과 트랜지스터를 측면에서 둘러싸는 제1의 도핑된 환상 영역을 기판내에 형성하는 단계와; 상기 제1의 도핑된 영역을 측면에서 둘러싸고 상기 제1의 도핑된 영역으로 부떠 이격된 제2의 도핑된 환상 영역을 기판내에 형성하는 단계와: 상기 전계 효과 트랜지스터를 측면에서 둘러싸고 상기 제1 및 제2의 필드링 사이에 위치하는 트렌치를 기판내에 형성하는 단계와: 절연물을 상기 트렌치내에 형성하는 단계를 포함하는 것을 특징으로 하는 고전압 트랜지스터 구조체 형성 방법.
  12. 제11항에 있어서, 상기 트랜지스터는 전계 효과 트랜지스터이고 또한 심부 보디 영역과 게이트 트렌치의 게이트 전극을 포함하며. 상기 제1의 도핑된 환상 영역, 제2의 도핑된 환상 영역 및 심부 보디 영역들은 동시에 형성되며, 상기 게이트 트렌치는 상기 트렌치와 동시에 형성되는 것을 특징으로 하는 고전압 트랜지스터 구조체 형성 방법.
    ※ 참고사항：최초출원 내용에 의하여 공개하는 것임.
KR1019930013624A 1992-07-23 1993-07-20 트렌치 기술을 이용한 에지 종단을 갖는 고전압 트랜지스터 KR0185677B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP92-215457 1992-07-21
US07/918,996 US5430324A (en) 1992-07-23 1992-07-23 High voltage transistor having edge termination utilizing trench technology
US7/918,996 1992-07-23
JP7/918,996 1992-07-23

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KR940003071A true KR940003071A (ko) 1994-02-19
KR0185677B1 KR0185677B1 (ko) 1999-03-20

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US (2) US5430324A (ko)
EP (1) EP0580213A1 (ko)
JP (1) JP3387564B2 (ko)
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DE (1) DE580213T1 (ko)

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KR100358629B1 (ko) * 1999-01-28 2002-10-25 인터내셔널 비지네스 머신즈 코포레이션 반도체 디바이스 구조물
KR100847991B1 (ko) * 2001-02-15 2008-07-22 엔엑스피 비 브이 반도체 디바이스

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US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
US5940721A (en) * 1995-10-11 1999-08-17 International Rectifier Corporation Termination structure for semiconductor devices and process for manufacture thereof
US5949124A (en) * 1995-10-31 1999-09-07 Motorola, Inc. Edge termination structure
US5736418A (en) * 1996-06-07 1998-04-07 Lsi Logic Corporation Method for fabricating a field effect transistor using microtrenches to control hot electron effects
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