KR920004028B1 - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR920004028B1
KR920004028B1 KR1019890016828A KR890016828A KR920004028B1 KR 920004028 B1 KR920004028 B1 KR 920004028B1 KR 1019890016828 A KR1019890016828 A KR 1019890016828A KR 890016828 A KR890016828 A KR 890016828A KR 920004028 B1 KR920004028 B1 KR 920004028B1
Authority
KR
South Korea
Prior art keywords
conductive layer
layer
insulating layer
trench
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019890016828A
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English (en)
Korean (ko)
Other versions
KR910010745A (ko
Inventor
김성태
최수한
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019890016828A priority Critical patent/KR920004028B1/ko
Priority to DE4007604A priority patent/DE4007604A1/de
Priority to US07/489,824 priority patent/US5077232A/en
Priority to JP2056775A priority patent/JP2530741B2/ja
Priority to FR9003111A priority patent/FR2654870B1/fr
Priority to GB9005576A priority patent/GB2238428B/en
Priority to IT02041690A priority patent/IT1248814B/it
Priority to CN90104393A priority patent/CN1030021C/zh
Publication of KR910010745A publication Critical patent/KR910010745A/ko
Application granted granted Critical
Publication of KR920004028B1 publication Critical patent/KR920004028B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
KR1019890016828A 1989-11-20 1989-11-20 반도체 장치 및 그 제조방법 Expired KR920004028B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019890016828A KR920004028B1 (ko) 1989-11-20 1989-11-20 반도체 장치 및 그 제조방법
US07/489,824 US5077232A (en) 1989-11-20 1990-03-09 Method of making stacked capacitor DRAM cells
JP2056775A JP2530741B2 (ja) 1989-11-20 1990-03-09 半導体装置及びその製造方法
DE4007604A DE4007604A1 (de) 1989-11-20 1990-03-09 Halbleiterbauelement und verfahren zu seiner herstellung
FR9003111A FR2654870B1 (fr) 1989-11-20 1990-03-12 Dispositif semi-conducteur, notamment dispositif de memoire a condensateur, et procede pour sa fabrication.
GB9005576A GB2238428B (en) 1989-11-20 1990-03-13 Semiconductor device and manufacturing method thereof
IT02041690A IT1248814B (it) 1989-11-20 1990-05-24 Dispositivo a semiconduttore e relativo metodo di fabbricazione
CN90104393A CN1030021C (zh) 1989-11-20 1990-05-25 半导体器件及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890016828A KR920004028B1 (ko) 1989-11-20 1989-11-20 반도체 장치 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR910010745A KR910010745A (ko) 1991-06-29
KR920004028B1 true KR920004028B1 (ko) 1992-05-22

Family

ID=19291836

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890016828A Expired KR920004028B1 (ko) 1989-11-20 1989-11-20 반도체 장치 및 그 제조방법

Country Status (8)

Country Link
US (1) US5077232A (enExample)
JP (1) JP2530741B2 (enExample)
KR (1) KR920004028B1 (enExample)
CN (1) CN1030021C (enExample)
DE (1) DE4007604A1 (enExample)
FR (1) FR2654870B1 (enExample)
GB (1) GB2238428B (enExample)
IT (1) IT1248814B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03278573A (ja) * 1990-03-28 1991-12-10 Mitsubishi Electric Corp 半導体記憶装置
KR930001418B1 (ko) * 1990-08-07 1993-02-27 삼성전자 주식회사 반도체 장치의 제조방법
US5196363A (en) * 1990-10-11 1993-03-23 Samsung Electronics Co., Ltd. Method of forming mist type dynamic random access memory cell
US5202279A (en) * 1990-12-05 1993-04-13 Texas Instruments Incorporated Poly sidewall process to reduce gated diode leakage
US5335138A (en) * 1993-02-12 1994-08-02 Micron Semiconductor, Inc. High dielectric constant capacitor and method of manufacture
US5406515A (en) * 1993-12-01 1995-04-11 International Business Machines Corporation Method for fabricating low leakage substrate plate trench DRAM cells and devices formed thereby
US5411905A (en) * 1994-04-29 1995-05-02 International Business Machines Corporation Method of making trench EEPROM structure on SOI with dual channels
US5795804A (en) * 1996-03-07 1998-08-18 United Microelectronics Corporation Method of fabricating a stack/trench capacitor for a dynamic random access memory (DRAM)
US6310375B1 (en) * 1998-04-06 2001-10-30 Siemens Aktiengesellschaft Trench capacitor with isolation collar and corresponding manufacturing method
US20060228853A1 (en) * 2005-03-28 2006-10-12 Won-Cheol Jeong Memory devices including spacers on sidewalls of memory storage elements and related methods
KR100753528B1 (ko) * 2006-01-04 2007-08-30 삼성전자주식회사 웨이퍼 레벨 패키지 및 이의 제조 방법
JP5005241B2 (ja) * 2006-03-23 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
CN100490057C (zh) * 2006-04-04 2009-05-20 联华电子股份有限公司 沟渠式电容器及其制造方法
JP4600936B2 (ja) * 2007-06-20 2010-12-22 三菱電機株式会社 半導体装置およびその製造方法
CN102130063B (zh) * 2010-01-13 2014-03-12 中国科学院微电子研究所 半导体器件及其制作方法
CN104217863B (zh) * 2014-09-10 2017-06-13 武汉理工大学 场效应调控超级电容器的制备方法
WO2020132884A1 (zh) * 2018-12-25 2020-07-02 深圳市汇顶科技股份有限公司 电容器和制备电容器的方法
CN115241162A (zh) * 2022-08-26 2022-10-25 上海华虹宏力半导体制造有限公司 一种深沟槽电容器及其制造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666436B2 (ja) * 1983-04-15 1994-08-24 株式会社日立製作所 半導体集積回路装置
JPS60223153A (ja) * 1984-04-19 1985-11-07 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型キャパシタを有する半導体装置の製法
US4545852A (en) * 1984-06-20 1985-10-08 Hewlett-Packard Company Planarization of dielectric films on integrated circuits
JPS6155957A (ja) * 1984-08-27 1986-03-20 Toshiba Corp 半導体記憶装置
US4651184A (en) * 1984-08-31 1987-03-17 Texas Instruments Incorporated Dram cell and array
CN1004734B (zh) * 1984-12-07 1989-07-05 得克萨斯仪器公司 动态随机存取存贮器单元(dram)和生产方法
JPH0682783B2 (ja) * 1985-03-29 1994-10-19 三菱電機株式会社 容量およびその製造方法
JP2604705B2 (ja) * 1985-04-03 1997-04-30 松下電子工業株式会社 Ｍｏｓキヤパシタの製造方法
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPS62136069A (ja) * 1985-12-10 1987-06-19 Hitachi Ltd 半導体装置およびその製造方法
JPS62266865A (ja) * 1986-05-15 1987-11-19 Hitachi Ltd 半導体装置
JPS62279655A (ja) * 1986-05-28 1987-12-04 Mitsubishi Electric Corp 半導体装置の製造方法
US4775550A (en) * 1986-06-03 1988-10-04 Intel Corporation Surface planarization method for VLSI technology
JP2702702B2 (ja) * 1986-06-12 1998-01-26 松下電器産業株式会社 半導体記憶装置
JPS6384149A (ja) * 1986-09-29 1988-04-14 Hitachi Ltd 半導体メモリの製造方法
US4785337A (en) * 1986-10-17 1988-11-15 International Business Machines Corporation Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes
JPS63122261A (ja) * 1986-11-12 1988-05-26 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0654801B2 (ja) * 1987-07-13 1994-07-20 日本電気株式会社 半導体メモリセルおよびその製造方法
JPS6447068A (en) * 1987-08-18 1989-02-21 Nec Corp Semiconductor integrated circuit device and manufacture thereof
JPH0795582B2 (ja) * 1987-11-17 1995-10-11 三菱電機株式会社 半導体装置の溝型キャパシタセルの製造方法
JPH0828471B2 (ja) * 1987-12-07 1996-03-21 日本電気株式会社 半導体記憶装置およびその製造方法
DE3916228C2 (de) * 1988-05-18 1995-06-22 Toshiba Kawasaki Kk Halbleiterspeichervorrichtung mit Stapelkondensatorzellenstruktur und Verfahren zu ihrer Herstellung

Also Published As

Publication number Publication date
GB9005576D0 (en) 1990-05-09
US5077232A (en) 1991-12-31
JPH03166760A (ja) 1991-07-18
CN1052006A (zh) 1991-06-05
GB2238428B (en) 1993-07-14
JP2530741B2 (ja) 1996-09-04
DE4007604C2 (enExample) 1992-01-16
KR910010745A (ko) 1991-06-29
IT1248814B (it) 1995-01-30
GB2238428A (en) 1991-05-29
CN1030021C (zh) 1995-10-11
IT9020416A0 (it) 1990-05-24
FR2654870B1 (fr) 1996-06-21
DE4007604A1 (de) 1991-05-23
IT9020416A1 (it) 1991-11-24
FR2654870A1 (fr) 1991-05-24

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