KR910021495A - 투명 도전막의 제조방법 및 그 제조장치 - Google Patents

투명 도전막의 제조방법 및 그 제조장치 Download PDF

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Publication number
KR910021495A
KR910021495A KR1019910003106A KR910003106A KR910021495A KR 910021495 A KR910021495 A KR 910021495A KR 1019910003106 A KR1019910003106 A KR 1019910003106A KR 910003106 A KR910003106 A KR 910003106A KR 910021495 A KR910021495 A KR 910021495A
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South Korea
Prior art keywords
target
conductive film
manufacturing
transparent conductive
high frequency
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KR1019910003106A
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English (en)
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KR950000009B1 (ko
Inventor
사또루 이시바시
규조 나까무라
야스시 히구찌
다까시 고마쓰
유조 무라따
요시후미 오따
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원본미기재
니혼신꾸 기쥬쓰 가부시끼가이샤
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Publication of KR910021495A publication Critical patent/KR910021495A/ko
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Publication of KR950000009B1 publication Critical patent/KR950000009B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

내용 없음

Description

투명 도전막의 제조방법 및 그 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는, 마그네트론 평행 자계강도와 직류 스퍼터 전압 변화와의 관계를 나타낸 특성선도, 제2도는, 본 발명의 일 실시예에 의한 투명 도전막의 제조 장치의 단면도, 제3도는, 중첩한 고주파 전력과 직류 스퍼터 전압의 변화와의 관계를 나타낸 특성선도.

Claims (2)

  1. In-O, Sn-O, Zn-O, Cd-Sn-O 혹은 Cd-In-O 계를 기본 구성원소로 하고, 필요에 따라서 도너로되는 원소를 첨가한 투명 도전막을 스퍼터법으로 형성하는 방법에 있어서, 타아깃 표면에서의 평행 자계 강도를 600 Oe이상으로 유지함과 동시에, 상기 타아깃에 직류전계와 고주파전계를 중첩하여 인가해서 스퍼터링하는 것을 특징으로 하는 투명 도전막의 제조방법.
  2. 진공실내에 기판과 타아깃을 대향시켜 설치하고, 그 기판과 타아깃 사이에 생기는 플라즈마 방전에 의해, 그 기판상에, In-O, Sn-O, Zn-O, Cd-Sn-O 혹은 Cd-In-O계를 기본 구성원소로 하고, 필요에 따라서 도너로되는 원소를 첨가한 투명 도전막을 스퍼터법으로서 형성하는 장치에 있어서, 상기 타아깃의 표면에 평행 자계 강도가 600 Oe 이상의 소정 강도의 자계를 형성하는 자계 형성수단, 상기 타아깃에 직류 전계를 인가하기 위한 직류 전원, 및 상기 타아깃에 상기 직류전계에 중첩시켜서 고주파 전계를 인가하기 위한 고주파 전원을 구비하고 있는 것을 특징으로 하는 투명 도전막의 제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910003106A 1990-02-27 1991-02-26 투명 도전막의 제조방법 및 그 제조장치 KR950000009B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2044558A JP2936276B2 (ja) 1990-02-27 1990-02-27 透明導電膜の製造方法およびその製造装置
JP2-44558 1990-02-27

Publications (2)

Publication Number Publication Date
KR910021495A true KR910021495A (ko) 1991-12-20
KR950000009B1 KR950000009B1 (ko) 1995-01-07

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ID=12694830

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KR1019910003106A KR950000009B1 (ko) 1990-02-27 1991-02-26 투명 도전막의 제조방법 및 그 제조장치

Country Status (5)

Country Link
US (1) US5180476A (ko)
EP (1) EP0447850B1 (ko)
JP (1) JP2936276B2 (ko)
KR (1) KR950000009B1 (ko)
DE (1) DE69123618T2 (ko)

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Also Published As

Publication number Publication date
DE69123618D1 (de) 1997-01-30
JPH03249171A (ja) 1991-11-07
DE69123618T2 (de) 1997-07-03
EP0447850A3 (en) 1993-10-27
KR950000009B1 (ko) 1995-01-07
EP0447850B1 (en) 1996-12-18
US5180476A (en) 1993-01-19
JP2936276B2 (ja) 1999-08-23
EP0447850A2 (en) 1991-09-25

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