KR950000919A - 스패터링 전극 - Google Patents
스패터링 전극 Download PDFInfo
- Publication number
- KR950000919A KR950000919A KR1019940014442A KR19940014442A KR950000919A KR 950000919 A KR950000919 A KR 950000919A KR 1019940014442 A KR1019940014442 A KR 1019940014442A KR 19940014442 A KR19940014442 A KR 19940014442A KR 950000919 A KR950000919 A KR 950000919A
- Authority
- KR
- South Korea
- Prior art keywords
- sputtering
- target
- sputtering electrode
- uniformity
- magnetic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
본 발명은 스패터링방법에 의해 형성되는 박막의 기판면내, 배치사이에 있어서의 막두께 및 막질의 균일성의 향상, 타게의 이용효율 향상을 도모하는 동시에, 강자성체타겟의 고속 또한 효율적인 스패터링을 행할 수 있는 스패터링 전극의 제공을 목적으로 한다.
그 구성은 직사각형 평판타겟(1)을 가지고, 이 타겟(1)의 표면에 대해서 평행으로 자력선(16)이 통과하도록 자석(16)을 배치한 스패터링 전극으로서, 자력선(16)의 방향으로 180°변경가능하게 하는 수단(17)을 구비한 스패터링중, 자기회로(15)의 극성의 반전을 반복하므로써, 자장과 전장에 의한 전자의 나선운동(19)이 한방향으로 한정되어 버리는 일이 없기 때문에, 플라즈마의 불균일성이 상쇄되고, 그 결과, 형성되는 박막의 기판면내, 배치사이에 있어서의 막두께 및 막질의 균일성이 향상되는 것을 특징으로 한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 있어서의 직사각형 평판타겟을 가진 스페터링 전극의 평면도, 제2도는 제1도에 있어서의 A-A' 단면도.
Claims (1)
- 직사각형 평판타겟을 가지고, 상기 직사각형 평판타겟의 표면을 평행으로 자력선이 통과하도록 자석을 배치한 스패터링 전극에 있어서, 상기 직사각형 평판타겟의 표면을 평행으로 통과하는 자력선의 방향을 180°변경하기 위하여, 상기 자석의 극성을 반전하는 수단을 구비한 것을 특징으로 하는 스패터링 전극.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5153234A JP2970317B2 (ja) | 1993-06-24 | 1993-06-24 | スパッタリング装置及びスパッタリング方法 |
JP93-153234 | 1993-06-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950000919A true KR950000919A (ko) | 1995-01-03 |
KR960012182B1 KR960012182B1 (ko) | 1996-09-16 |
Family
ID=15557989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940014442A KR960012182B1 (ko) | 1993-06-24 | 1994-06-23 | 스패터링 전극 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5512156A (ko) |
JP (1) | JP2970317B2 (ko) |
KR (1) | KR960012182B1 (ko) |
CN (1) | CN1062916C (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6093290A (en) | 1997-05-14 | 2000-07-25 | Canon Kabushiki Kaisha | Method of generating a reciprocating plurality of magnetic fluxes on a target |
SE511139C2 (sv) * | 1997-11-20 | 1999-08-09 | Hana Barankova | Plasmabearbetningsapparat med vridbara magneter |
AU9410498A (en) * | 1997-11-26 | 1999-06-17 | Vapor Technologies, Inc. | Apparatus for sputtering or arc evaporation |
JPH11172432A (ja) * | 1997-12-16 | 1999-06-29 | Hitachi Ltd | 磁性膜形成装置 |
FR2778307A1 (fr) * | 1998-04-29 | 1999-11-05 | Combustible Nucleaire Sicn Soc | Procede de densification d'un plasma |
US5997705A (en) * | 1999-04-14 | 1999-12-07 | Vapor Technologies, Inc. | Rectangular filtered arc plasma source |
JP4219566B2 (ja) * | 2001-03-30 | 2009-02-04 | 株式会社神戸製鋼所 | スパッタ装置 |
US6709557B1 (en) | 2002-02-28 | 2004-03-23 | Novellus Systems, Inc. | Sputter apparatus for producing multi-component metal alloy films and method for making the same |
DE10232179B4 (de) * | 2002-07-16 | 2009-01-08 | Qimonda Ag | PVD-Verfahren |
CN101180417B (zh) * | 2005-10-18 | 2010-12-08 | 株式会社爱发科 | 溅射装置及成膜方法 |
US7498587B2 (en) * | 2006-05-01 | 2009-03-03 | Vapor Technologies, Inc. | Bi-directional filtered arc plasma source |
CN101466862A (zh) * | 2006-06-08 | 2009-06-24 | 芝浦机械电子株式会社 | 磁控溅射磁体部件、磁控溅射装置和方法 |
JP5477868B2 (ja) * | 2011-02-22 | 2014-04-23 | 株式会社日本製鋼所 | マグネトロン型スパッタ装置 |
CN102719799A (zh) * | 2012-06-08 | 2012-10-10 | 深圳市华星光电技术有限公司 | 旋转磁控溅射靶及相应的磁控溅射装置 |
CN104947048A (zh) * | 2015-05-14 | 2015-09-30 | 宁波时代全芯科技有限公司 | 镀膜装置 |
CN114517287A (zh) * | 2022-02-24 | 2022-05-20 | 武汉普迪真空科技有限公司 | 一种高功率脉冲磁控溅射装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3956093A (en) * | 1974-12-16 | 1976-05-11 | Airco, Inc. | Planar magnetron sputtering method and apparatus |
JPH02243761A (ja) * | 1989-03-15 | 1990-09-27 | Ulvac Corp | マグネトロンスパッタリング源用電磁石の制御方法 |
US5133858A (en) * | 1989-11-30 | 1992-07-28 | Layton Manufacturing Corporation | Reverse osmosis water purification apparatus |
CN1021062C (zh) * | 1990-02-27 | 1993-06-02 | 北京联合大学机械工程学院 | 新型电磁控阴极电弧源 |
DE4018914C1 (ko) * | 1990-06-13 | 1991-06-06 | Leybold Ag, 6450 Hanau, De | |
US5106478A (en) * | 1990-12-06 | 1992-04-21 | Wolf Musow | Electrode wiper cleaning system |
DE4042286C1 (ko) * | 1990-12-31 | 1992-02-06 | Leybold Ag, 6450 Hanau, De | |
JPH05148642A (ja) * | 1991-11-28 | 1993-06-15 | Hitachi Ltd | マグネトロンスパツタ装置 |
JPH0641740A (ja) * | 1992-07-28 | 1994-02-15 | Matsushita Electric Ind Co Ltd | スパッタリング装置 |
US5403457A (en) * | 1992-08-24 | 1995-04-04 | Matsushita Electric Industrial Co., Ltd. | Method for making soft magnetic film |
US5399253A (en) * | 1992-12-23 | 1995-03-21 | Balzers Aktiengesellschaft | Plasma generating device |
-
1993
- 1993-06-24 JP JP5153234A patent/JP2970317B2/ja not_active Expired - Fee Related
-
1994
- 1994-06-15 CN CN94106284A patent/CN1062916C/zh not_active Expired - Fee Related
- 1994-06-23 KR KR1019940014442A patent/KR960012182B1/ko not_active IP Right Cessation
- 1994-06-24 US US08/265,019 patent/US5512156A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2970317B2 (ja) | 1999-11-02 |
US5512156A (en) | 1996-04-30 |
CN1062916C (zh) | 2001-03-07 |
KR960012182B1 (ko) | 1996-09-16 |
JPH0711440A (ja) | 1995-01-13 |
CN1100151A (zh) | 1995-03-15 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20040907 Year of fee payment: 9 |
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LAPS | Lapse due to unpaid annual fee |