KR890004417A - 반도체 제조장치 - Google Patents

반도체 제조장치 Download PDF

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Publication number
KR890004417A
KR890004417A KR1019880010740A KR880010740A KR890004417A KR 890004417 A KR890004417 A KR 890004417A KR 1019880010740 A KR1019880010740 A KR 1019880010740A KR 880010740 A KR880010740 A KR 880010740A KR 890004417 A KR890004417 A KR 890004417A
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KR
South Korea
Prior art keywords
opening
substrate
semiconductor manufacturing
manufacturing apparatus
target
Prior art date
Application number
KR1019880010740A
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English (en)
Other versions
KR910009317B1 (ko
Inventor
도시히코 가츠라
마사히로 아베
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR890004417A publication Critical patent/KR890004417A/ko
Application granted granted Critical
Publication of KR910009317B1 publication Critical patent/KR910009317B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

요약 없음

Description

반도체 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제3도는 본 발명의 각 실시예를 도시한 단면도.

Claims (4)

  1. 타게트(14)와 반도체기판(18)이 마주보도록된 절연막형성용 시이트식 고속바이어스 스파터장치에 있어서, 상기 타게트(14)와 기판(18)사이에 이루어진 공간을 상기 기판(18)표면이 위치하는 곳에 제1개구부(31)가 있는 방착판으로 막고, 이 방착판에는 상기 제1개구부(31)로부터 떨어진 곳에 타게트전력분산을 위한 제2개구부가 마련된 것을 특징으로 하는 반도체 제조장치.
  2. 제1항에 있어서, 상기기판(18) 주변근방의 빈틈으로 플라즈마가 집중되는 것을 방지하기 위해, 상기기판(18) 주변근방의 기판전극(17)과 상기 방착판의 제1개구부(31) 안쪽가장자지부위가 겹쳐서 이들 양자간에 빈틈이 없도록 구성된 것을 특징으로 하는 반도체 제조장치.
  3. 제1항 또는 제2항에 있어서, 상기 방착판의 제2개구부가 여러개 마련된 것을 특징으로 하는 반도체 제조장치.
  4. 제1항 내지 제3항중 어느 한 항에 있어서, 상기 제2개구부를 통해서 피스파터입자가 상기 공간바깥으로 튀어나가지 않도록, 상기 제2개구부의 가장자리 부위가 절곡시켜 끼워맞춰진 형태로 된 것을 특징으로 하는 반도체 제조장치.
    ※ 참고사항 : 최초출원내용에 의하여 공개하는 것임.
KR1019880010740A 1987-08-26 1988-08-24 반도체 제조장치 KR910009317B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62-211607 1987-03-26
JP62211607A JPS6454733A (en) 1987-08-26 1987-08-26 Production device for semiconductor

Publications (2)

Publication Number Publication Date
KR890004417A true KR890004417A (ko) 1989-04-21
KR910009317B1 KR910009317B1 (ko) 1991-11-09

Family

ID=16608563

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880010740A KR910009317B1 (ko) 1987-08-26 1988-08-24 반도체 제조장치

Country Status (5)

Country Link
US (1) US4897172A (ko)
EP (1) EP0304895B1 (ko)
JP (1) JPS6454733A (ko)
KR (1) KR910009317B1 (ko)
DE (1) DE3885043T2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07110991B2 (ja) * 1989-10-02 1995-11-29 株式会社日立製作所 プラズマ処理装置およびプラズマ処理方法
DE69111490T2 (de) * 1990-03-02 1996-04-18 Applied Materials Inc Verfahren zur Vorbereitung einer Blende zur Verminderung von Teilchen in einer Kammer zur physikalischen Aufdampfung.
JP3076367B2 (ja) * 1990-11-29 2000-08-14 キヤノン株式会社 プラズマ処理装置
WO1992016671A1 (en) * 1991-03-20 1992-10-01 Canon Kabushiki Kaisha Method and device for forming film by sputtering process
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten
US5736021A (en) * 1996-07-10 1998-04-07 Applied Materials, Inc. Electrically floating shield in a plasma reactor
DE19755837A1 (de) * 1997-12-16 1999-06-17 Leybold Ag Sputteranlage
JP4656697B2 (ja) 2000-06-16 2011-03-23 キヤノンアネルバ株式会社 高周波スパッタリング装置
JP3972558B2 (ja) * 2000-06-23 2007-09-05 松下電器産業株式会社 スパッタリング装置
KR100620194B1 (ko) * 2002-12-30 2006-09-01 동부일렉트로닉스 주식회사 스퍼터링 장치의 공정 챔버
JP4393897B2 (ja) 2004-03-12 2010-01-06 新明和工業株式会社 成膜装置
JP2012509140A (ja) * 2008-11-20 2012-04-19 カーディアック ペースメイカーズ， インコーポレイテッド 構造化された表面を有する細胞反発性電極
WO2012109104A2 (en) * 2011-02-09 2012-08-16 Applied Materials, Inc. Uniformity tuning capable esc grounding kit for rf pvd chamber

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1163496A (en) * 1967-06-23 1969-09-04 Edwards High Vacuum Interation Improvements in or relating to Radio Frequency Sputtering
FR2082505A5 (ko) * 1970-03-18 1971-12-10 Radiotechnique Compelec
FR2324755A1 (fr) * 1975-09-19 1977-04-15 Anvar Dispositif de pulverisation cathodique de grande vitesse de depot
JPS5621836A (en) * 1979-07-31 1981-02-28 Makoto Ishikawa Manufacture of polyvinyl chloride made hollow ball
US4525262A (en) * 1982-01-26 1985-06-25 Materials Research Corporation Magnetron reactive bias sputtering method and apparatus
JPS58151547A (ja) * 1982-03-05 1983-09-08 Shinkosumosu Denki Kk 電力帰還型ガス検知装置
JPS58164228A (ja) * 1982-03-25 1983-09-29 Toshiba Corp 誘電体の薄膜形成方法
JPS5917236A (ja) * 1982-07-21 1984-01-28 Hitachi Ltd 膜形成装置
JPS6026659A (ja) * 1983-07-25 1985-02-09 Anelva Corp スパツタリング装置
JPS60197873A (ja) * 1984-03-19 1985-10-07 Ulvac Corp スパツタリング装置における絶縁物タ−ゲツト用ア−スシ−ルド装置
JPS62284074A (ja) * 1985-12-27 1987-12-09 Arubatsuku Seimaku Kk 連続スパツタリング装置
JPS62167876A (ja) * 1986-01-20 1987-07-24 Meidensha Electric Mfg Co Ltd スパツタリング装置

Also Published As

Publication number Publication date
JPS6454733A (en) 1989-03-02
EP0304895B1 (en) 1993-10-20
KR910009317B1 (ko) 1991-11-09
DE3885043D1 (de) 1993-11-25
US4897172A (en) 1990-01-30
EP0304895A2 (en) 1989-03-01
EP0304895A3 (en) 1990-09-26
DE3885043T2 (de) 1994-02-10

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