DE69111490T2 - Verfahren zur Vorbereitung einer Blende zur Verminderung von Teilchen in einer Kammer zur physikalischen Aufdampfung. - Google Patents

Verfahren zur Vorbereitung einer Blende zur Verminderung von Teilchen in einer Kammer zur physikalischen Aufdampfung.

Info

Publication number
DE69111490T2
DE69111490T2 DE1991611490 DE69111490T DE69111490T2 DE 69111490 T2 DE69111490 T2 DE 69111490T2 DE 1991611490 DE1991611490 DE 1991611490 DE 69111490 T DE69111490 T DE 69111490T DE 69111490 T2 DE69111490 T2 DE 69111490T2
Authority
DE
Germany
Prior art keywords
orifice
preparing
vapor deposition
physical vapor
deposition chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1991611490
Other languages
English (en)
Other versions
DE69111490D1 (de
Inventor
Humoyoun Talieh
Haim Gilboa
Donald M Mintz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69111490D1 publication Critical patent/DE69111490D1/de
Publication of DE69111490T2 publication Critical patent/DE69111490T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electrodes Of Semiconductors (AREA)
DE1991611490 1990-03-02 1991-02-19 Verfahren zur Vorbereitung einer Blende zur Verminderung von Teilchen in einer Kammer zur physikalischen Aufdampfung. Expired - Fee Related DE69111490T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48756790A 1990-03-02 1990-03-02

Publications (2)

Publication Number Publication Date
DE69111490D1 DE69111490D1 (de) 1995-08-31
DE69111490T2 true DE69111490T2 (de) 1996-04-18

Family

ID=23936262

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991611490 Expired - Fee Related DE69111490T2 (de) 1990-03-02 1991-02-19 Verfahren zur Vorbereitung einer Blende zur Verminderung von Teilchen in einer Kammer zur physikalischen Aufdampfung.

Country Status (5)

Country Link
EP (1) EP0446657B1 (de)
JP (1) JPH0819515B2 (de)
KR (1) KR100226809B1 (de)
DE (1) DE69111490T2 (de)
ES (1) ES2076385T3 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5401319A (en) * 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
US5403459A (en) * 1993-05-17 1995-04-04 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator
US5423918A (en) * 1993-09-21 1995-06-13 Applied Materials, Inc. Method for reducing particulate contamination during plasma processing of semiconductor devices
JP2720420B2 (ja) * 1994-04-06 1998-03-04 キヤノン販売株式会社 成膜／エッチング装置
US5518593A (en) * 1994-04-29 1996-05-21 Applied Komatsu Technology, Inc. Shield configuration for vacuum chamber
JPH09512390A (ja) * 1995-02-16 1997-12-09 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ クロム層を含むスイッチを持つデバイス、及びクロム層をスパッタリングでデポジットする方法
US5614071A (en) * 1995-06-28 1997-03-25 Hmt Technology Corporation Sputtering shield
US6007673A (en) * 1996-10-02 1999-12-28 Matsushita Electronics Corporation Apparatus and method of producing an electronic device
US6589407B1 (en) 1997-05-23 2003-07-08 Applied Materials, Inc. Aluminum deposition shield
US6105435A (en) 1997-10-24 2000-08-22 Cypress Semiconductor Corp. Circuit and apparatus for verifying a chamber seal, and method of depositing a material onto a substrate using the same
JP4656697B2 (ja) 2000-06-16 2011-03-23 キヤノンアネルバ株式会社 高周波スパッタリング装置
JP5856805B2 (ja) * 2010-11-01 2016-02-10 株式会社アルバック 真空部品の製造方法
US20200306802A1 (en) * 2017-12-18 2020-10-01 Sekisui Chemical Co., Ltd. Surface treatment method and surface treatment apparatus
CN112847048B (zh) * 2020-12-31 2021-12-17 浙江茂丰工艺品有限公司 一种水晶加工设备
CN112877655A (zh) * 2021-03-08 2021-06-01 泰杋科技股份有限公司 一种溅镀沉积的反应腔体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2088659A5 (de) * 1970-04-21 1972-01-07 Progil
BE786708A (fr) * 1971-07-29 1973-01-25 Uss Eng & Consult Application d'un revetement de chrome brillant sous un vide modere
JPS60238474A (ja) * 1984-05-10 1985-11-27 Toshiba Corp モリブデンシリサイドスパツタリング装置
JPS62243783A (ja) * 1986-04-16 1987-10-24 Hitachi Ltd 真空処理装置
JPS6454733A (en) * 1987-08-26 1989-03-02 Toshiba Corp Production device for semiconductor
JPH01159368A (ja) * 1987-12-15 1989-06-22 Canon Inc 堆積膜形成装置
JPH02285067A (ja) * 1989-04-27 1990-11-22 Toshiba Corp 真空薄膜形成装置
JPH083145B2 (ja) * 1989-06-08 1996-01-17 富士通株式会社 半導体製造装置

Also Published As

Publication number Publication date
JPH0819515B2 (ja) 1996-02-28
EP0446657B1 (de) 1995-07-26
EP0446657A1 (de) 1991-09-18
JPH05106020A (ja) 1993-04-27
KR100226809B1 (ko) 1999-10-15
ES2076385T3 (es) 1995-11-01
DE69111490D1 (de) 1995-08-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee