DE68915465D1 - Verfahren zur Formung von Teilen vorgewählter Grösse aus Siliciumstäben. - Google Patents

Verfahren zur Formung von Teilen vorgewählter Grösse aus Siliciumstäben.

Info

Publication number
DE68915465D1
DE68915465D1 DE68915465T DE68915465T DE68915465D1 DE 68915465 D1 DE68915465 D1 DE 68915465D1 DE 68915465 T DE68915465 T DE 68915465T DE 68915465 T DE68915465 T DE 68915465T DE 68915465 D1 DE68915465 D1 DE 68915465D1
Authority
DE
Germany
Prior art keywords
forming parts
silicon rods
preselected size
preselected
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68915465T
Other languages
English (en)
Other versions
DE68915465T2 (de
Inventor
Leslie Charles Kun
Slooten Richard Andrew Van
Ravi Prasad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Silicon Materials LLC
Original Assignee
Advanced Silicon Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Silicon Materials LLC filed Critical Advanced Silicon Materials LLC
Publication of DE68915465D1 publication Critical patent/DE68915465D1/de
Application granted granted Critical
Publication of DE68915465T2 publication Critical patent/DE68915465T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE68915465T 1988-02-18 1989-02-17 Verfahren zur Formung von Teilen vorgewählter Grösse aus Siliciumstäben. Expired - Lifetime DE68915465T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15673188A 1988-02-18 1988-02-18

Publications (2)

Publication Number Publication Date
DE68915465D1 true DE68915465D1 (de) 1994-06-30
DE68915465T2 DE68915465T2 (de) 1994-09-08

Family

ID=22560842

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915465T Expired - Lifetime DE68915465T2 (de) 1988-02-18 1989-02-17 Verfahren zur Formung von Teilen vorgewählter Grösse aus Siliciumstäben.

Country Status (4)

Country Link
EP (1) EP0329163B1 (de)
JP (1) JPH0791048B2 (de)
KR (1) KR940007093B1 (de)
DE (1) DE68915465T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US6874713B2 (en) * 2002-08-22 2005-04-05 Dow Corning Corporation Method and apparatus for improving silicon processing efficiency
DE102009044991A1 (de) 2009-09-24 2011-03-31 Wacker Chemie Ag Stabförmiges Polysilicium mit verbesserter Brucheigenschaft
JP5689382B2 (ja) * 2011-07-25 2015-03-25 信越化学工業株式会社 多結晶シリコンロッドの破砕方法
JP6217140B2 (ja) * 2013-05-29 2017-10-25 三菱マテリアル株式会社 多結晶シリコン材料の製造方法
CN103361736A (zh) * 2013-07-16 2013-10-23 江西旭阳雷迪高科技股份有限公司 一种用水淬法粉碎制备母合金的方法
DE102014201096A1 (de) * 2014-01-22 2015-07-23 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
CN112342616B (zh) * 2019-08-07 2021-11-16 洛阳阿特斯光伏科技有限公司 一种晶体硅棒的加工方法及其产品
CN111452236B (zh) * 2020-04-16 2022-05-03 西安奕斯伟材料科技有限公司 晶棒粘接方法及晶棒粘接装置
CN115697905B (zh) * 2020-06-09 2024-09-17 株式会社德山 多晶硅破碎物及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299044A (de) * 1962-10-11
JPS6033210A (ja) * 1983-08-02 1985-02-20 Komatsu Denshi Kinzoku Kk 半導体用シリコンの破砕方法
JPH0829924B2 (ja) * 1987-07-08 1996-03-27 三井東圧化学株式会社 高純度珪素の破砕方法

Also Published As

Publication number Publication date
KR890013711A (ko) 1989-09-25
EP0329163B1 (de) 1994-05-25
JPH0791048B2 (ja) 1995-10-04
JPH01249618A (ja) 1989-10-04
EP0329163A3 (de) 1991-07-03
EP0329163A2 (de) 1989-08-23
DE68915465T2 (de) 1994-09-08
KR940007093B1 (ko) 1994-08-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ADVANCED SILICON MATERIALS LLC,(N.D.GES.D.STAATES