KR950000919A - Sputtering electrode - Google Patents

Sputtering electrode Download PDF

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Publication number
KR950000919A
KR950000919A KR1019940014442A KR19940014442A KR950000919A KR 950000919 A KR950000919 A KR 950000919A KR 1019940014442 A KR1019940014442 A KR 1019940014442A KR 19940014442 A KR19940014442 A KR 19940014442A KR 950000919 A KR950000919 A KR 950000919A
Authority
KR
South Korea
Prior art keywords
sputtering
target
sputtering electrode
uniformity
magnetic
Prior art date
Application number
KR1019940014442A
Other languages
Korean (ko)
Other versions
KR960012182B1 (en
Inventor
히토시 야마니시
이사무 아오쿠라
토시유키 스에미쯔
타카히로 타키사와
Original Assignee
모리시타 요이찌
마쯔시다덴기산교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 모리시타 요이찌, 마쯔시다덴기산교 가부시기가이샤 filed Critical 모리시타 요이찌
Publication of KR950000919A publication Critical patent/KR950000919A/en
Application granted granted Critical
Publication of KR960012182B1 publication Critical patent/KR960012182B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

본 발명은 스패터링방법에 의해 형성되는 박막의 기판면내, 배치사이에 있어서의 막두께 및 막질의 균일성의 향상, 타게의 이용효율 향상을 도모하는 동시에, 강자성체타겟의 고속 또한 효율적인 스패터링을 행할 수 있는 스패터링 전극의 제공을 목적으로 한다.According to the present invention, it is possible to improve the uniformity of the film thickness and the film quality between the substrate surface and the arrangement of the thin film formed by the sputtering method and to improve the utilization efficiency of the target, and to perform high speed and efficient sputtering of the ferromagnetic target. An object of the present invention is to provide a sputtering electrode.

그 구성은 직사각형 평판타겟(1)을 가지고, 이 타겟(1)의 표면에 대해서 평행으로 자력선(16)이 통과하도록 자석(16)을 배치한 스패터링 전극으로서, 자력선(16)의 방향으로 180°변경가능하게 하는 수단(17)을 구비한 스패터링중, 자기회로(15)의 극성의 반전을 반복하므로써, 자장과 전장에 의한 전자의 나선운동(19)이 한방향으로 한정되어 버리는 일이 없기 때문에, 플라즈마의 불균일성이 상쇄되고, 그 결과, 형성되는 박막의 기판면내, 배치사이에 있어서의 막두께 및 막질의 균일성이 향상되는 것을 특징으로 한 것이다.The configuration is a sputtering electrode having a rectangular flat plate target 1 and arranged with a magnet 16 so that the magnetic force line 16 passes in parallel with the surface of the target 1, which is 180 in the direction of the magnetic force line 16. During the sputtering with the means 17 for changing, by repeating the inversion of the polarity of the magnetic circuit 15, the spiral motion 19 of the electrons due to the magnetic field and the electric field is not limited to one direction. Therefore, the nonuniformity of the plasma is canceled, and as a result, the film thickness and uniformity of the film quality between the substrate surface and the arrangement of the formed thin film are improved.

Description

스패터링 전극Sputtering electrode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 일실시예에 있어서의 직사각형 평판타겟을 가진 스페터링 전극의 평면도, 제2도는 제1도에 있어서의 A-A' 단면도.1 is a plan view of a sputtering electrode having a rectangular flat plate target according to one embodiment of the present invention, and FIG. 2 is a cross-sectional view along the line A-A 'in FIG.

Claims (1)

직사각형 평판타겟을 가지고, 상기 직사각형 평판타겟의 표면을 평행으로 자력선이 통과하도록 자석을 배치한 스패터링 전극에 있어서, 상기 직사각형 평판타겟의 표면을 평행으로 통과하는 자력선의 방향을 180°변경하기 위하여, 상기 자석의 극성을 반전하는 수단을 구비한 것을 특징으로 하는 스패터링 전극.In a sputtering electrode having a rectangular flat plate target and a magnet arranged so that magnetic lines of magnetic force pass in parallel to the surface of the rectangular flat plate target, in order to change the direction of the magnetic lines of force that pass through the surface of the rectangular flat plate target in parallel by 180 °, And a means for inverting the polarity of the magnet. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940014442A 1993-06-24 1994-06-23 Sputtering electrode KR960012182B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-153234 1993-06-24
JP5153234A JP2970317B2 (en) 1993-06-24 1993-06-24 Sputtering apparatus and sputtering method

Publications (2)

Publication Number Publication Date
KR950000919A true KR950000919A (en) 1995-01-03
KR960012182B1 KR960012182B1 (en) 1996-09-16

Family

ID=15557989

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940014442A KR960012182B1 (en) 1993-06-24 1994-06-23 Sputtering electrode

Country Status (4)

Country Link
US (1) US5512156A (en)
JP (1) JP2970317B2 (en)
KR (1) KR960012182B1 (en)
CN (1) CN1062916C (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093290A (en) 1997-05-14 2000-07-25 Canon Kabushiki Kaisha Method of generating a reciprocating plurality of magnetic fluxes on a target
SE511139C2 (en) * 1997-11-20 1999-08-09 Hana Barankova Plasma processing apparatus with rotatable magnets
AU9410498A (en) 1997-11-26 1999-06-17 Vapor Technologies, Inc. Apparatus for sputtering or arc evaporation
JPH11172432A (en) * 1997-12-16 1999-06-29 Hitachi Ltd Magnetic film forming device
FR2778307A1 (en) * 1998-04-29 1999-11-05 Combustible Nucleaire Sicn Soc Cathode plasma density increasing technique
US5997705A (en) * 1999-04-14 1999-12-07 Vapor Technologies, Inc. Rectangular filtered arc plasma source
JP4219566B2 (en) * 2001-03-30 2009-02-04 株式会社神戸製鋼所 Sputtering equipment
US6709557B1 (en) 2002-02-28 2004-03-23 Novellus Systems, Inc. Sputter apparatus for producing multi-component metal alloy films and method for making the same
DE10232179B4 (en) * 2002-07-16 2009-01-08 Qimonda Ag PVD
EP1939321B1 (en) * 2005-10-18 2013-05-01 Ulvac, Inc. Sputtering apparatus and film forming method
US7498587B2 (en) * 2006-05-01 2009-03-03 Vapor Technologies, Inc. Bi-directional filtered arc plasma source
WO2007142265A1 (en) * 2006-06-08 2007-12-13 Shibaura Mechatronics Corporation Magnetron sputtering magnet assembly, magnetron sputtering device, and magnetron sputtering method
JP5477868B2 (en) * 2011-02-22 2014-04-23 株式会社日本製鋼所 Magnetron type sputtering equipment
CN102719799A (en) * 2012-06-08 2012-10-10 深圳市华星光电技术有限公司 Rotary magnetron sputtering target and corresponding magnetron sputtering device
CN104947048A (en) * 2015-05-14 2015-09-30 宁波时代全芯科技有限公司 Coating device
CN114517287A (en) * 2022-02-24 2022-05-20 武汉普迪真空科技有限公司 High-power pulse magnetron sputtering device

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
JPH02243761A (en) * 1989-03-15 1990-09-27 Ulvac Corp Method for controlling electromagnet for magnetron sputtering source
US5133858A (en) * 1989-11-30 1992-07-28 Layton Manufacturing Corporation Reverse osmosis water purification apparatus
CN1021062C (en) * 1990-02-27 1993-06-02 北京联合大学机械工程学院 Electromagnetically controlled cathode arc source
DE4018914C1 (en) * 1990-06-13 1991-06-06 Leybold Ag, 6450 Hanau, De
US5106478A (en) * 1990-12-06 1992-04-21 Wolf Musow Electrode wiper cleaning system
DE4042286C1 (en) * 1990-12-31 1992-02-06 Leybold Ag, 6450 Hanau, De
JPH05148642A (en) * 1991-11-28 1993-06-15 Hitachi Ltd Magnetron sputtering device
JPH0641740A (en) * 1992-07-28 1994-02-15 Matsushita Electric Ind Co Ltd Sputtering device
US5403457A (en) * 1992-08-24 1995-04-04 Matsushita Electric Industrial Co., Ltd. Method for making soft magnetic film
US5399253A (en) * 1992-12-23 1995-03-21 Balzers Aktiengesellschaft Plasma generating device

Also Published As

Publication number Publication date
US5512156A (en) 1996-04-30
JP2970317B2 (en) 1999-11-02
CN1100151A (en) 1995-03-15
KR960012182B1 (en) 1996-09-16
JPH0711440A (en) 1995-01-13
CN1062916C (en) 2001-03-07

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