JP5477868B2 - Magnetron type sputtering equipment - Google Patents

Description

  The present invention relates to a magnetron type sputtering apparatus that performs sputtering by applying a magnetic force.

As an apparatus for forming a thin film or the like by sputtering a target, a magnetron type sputtering apparatus using a magnetic force to increase sputtering efficiency is known.
However, although the magnetron type sputtering apparatus is excellent in sputtering efficiency, there is a problem that the erosion of the target is biased by the action of magnetic force and the usage efficiency of the target is reduced. For this reason, various magnetron sputtering apparatuses intended to prevent uneven erosion of the target have been proposed (see, for example, Patent Documents 1 to 5). Some of them will be described below.

FIG. 10 shows a conventional planar magnetron sputtering apparatus described in Patent Document 1. FIG. 10A is a plan view showing the arrangement of targets and permanent magnets in the apparatus, and FIG. 10B is a cross-sectional view of FIG. 10A, which combines the distribution of the vertical component Hv of the magnetic field and the magnetic field lines. It shows.
In this planar magnetron sputtering apparatus, on the back surface of the oval target 24, a linear central magnet 20 extending along the central axis, and an oval annular ring disposed around the central magnet 20 with a certain interval. The outer magnet 21 is provided. Between the central magnet 20 and the outer magnet 21, an elliptical auxiliary magnet 22 arranged concentrically and between the auxiliary magnet 22 and the outer magnet 21 in parallel along the linear portions of these magnets. Arranged linear auxiliary magnets 23 are provided. FIG. 10B schematically shows the distribution of the vertical magnetic field Hv formed on the target in the magnet arrangement and the form of the lines of magnetic force. The vertical magnetic field Hv has a distribution that passes through the zero level three times.

  In Patent Document 1, the concentration of electrons is the highest in the two crests of the magnetic field lines and the wide band-shaped part that fills between them, and ions are also collected in this part, and these ions are accelerated by the sheath voltage to target the target. It is described that a wide U-shaped erosion profile is obtained. In addition, it is said that the use efficiency can be increased from the conventional 15% to 50% or more.

FIG. 11 shows a plan view of a conventional magnetron sputtering apparatus described in Patent Document 2.
This magnetron sputtering apparatus has magnetron magnetic field generating magnets 30, 31, 33 provided on the back surface of the target, and a mechanism for swinging the magnetron magnetic field generating magnets 30, 31, 33 in the direction of arrow 34. Yes. FIG. 32 shows the drift direction of electrons. Around the target, there are provided a shield positioned in a direction orthogonal to the moving direction of the magnetron magnetic field generating magnet and a shield positioned in the moving direction of the magnetron magnetic field generating magnet. On the target, the racetrack-shaped plasma moves with the movement of the magnetron magnetic field generating magnet.
In the above-mentioned Patent Document 2, by providing a gap between the magnetron magnetic field generating magnet 30 and the magnetron magnetic field generating magnet 33 to ensure a passage of electron current, the plasma is stabilized, and the sputtering voltage depending on the position of the magnetron magnet. It is said that the change of can be suppressed to the minimum.

FIG. 12 shows a conventional sputtering apparatus described in Patent Document 3. FIG. 12A is a cross-sectional view showing the inside of the device, and FIG. 12B is a plan view showing a moving path of the magnetron magnet device.
In the sputtering apparatus 40, substrate-like first and second targets 41a and 41b are arranged. A magnet traveling track 42 is laid on the back surfaces of the first and second targets 41a and 41b. One or two or more first and second magnetron magnet devices 43 and 44 having different sizes are attached to the magnet traveling track 42.
The magnetron magnet devices are arranged side by side along the magnet traveling track 42. The first and second magnetron magnet devices 43 and 44 are placed on the magnet traveling track 42 by the magnet moving device 45 without changing the order. To move.

  In the sputtering apparatus 40, the first and second magnetron magnet apparatuses 43 and 44 are linearly moved along the long sides at the back surface positions of the first and second targets 41a and 41b during sputtering. As a result, two strip-shaped erosion regions are formed on the surfaces of the first and second targets 41a and 41b. By these erosion regions, a wide region of the target surface is sputtered uniformly, and the target use efficiency is improved.

JP-A-6-21041 JP-A-7-233473 JP 2009-97057 A JP-A-8-209343 Special table 2003-514991 gazette

However, the above-described conventional magnetron type sputtering apparatus has not yet achieved a satisfactory erosion profile.
For example, among the conventional devices, in the device of Patent Document 1, in order to widen the erosion region of the target and make the erosion depth uniform, the vertical magnetic field component Hv in a plane parallel to the target passes through zero level three times. As a result, the concentration of electrons is highest in the two peak portions of the magnetic field lines and the wide band-like portion that fills between them, and ions also gather in this portion, and are accelerated by the sheath voltage to strike the target and thus wide. A U-shaped erosion profile is obtained.
In the vicinity of the tops of the two peaks of the magnetic field lines as described above, the vertical magnetic field component Hv is substantially the same position as the first and third target positions where the zero level is reached. Maximum. Here, electrons draw a cycloid or trochoidal orbit in the direction of the vector cross product E × Hh of the electric field E perpendicular to the target surface and the horizontal magnetic field component Hh (direction perpendicular to both the horizontal magnetic field Hh and the electric field E). It drifts. While drifting along this orbit, ions collide with neutral particles such as argon, and the ions collide toward the target, and sputtered particles of the target material and secondary electrons are emitted. The secondary electrons behave in the same way as the first electrons, so that ions are generated and the plasma grows. The collision between electrons and neutral particles is determined by the mean free path λ of electrons calculated by the density distribution of the neutral particles and the absolute temperature. The electrons are considered to collide with the neutral particles at least once while moving through the mean free path λ. Therefore, the longer the moving distance of electrons drifting in a trochoidal orbit on the target, the greater the number of collisions with neutral particles, the more ions that are generated, and the higher the plasma density.

Due to the plasma growth mechanism, the electron density and the plasma density are large at the first and third target positions where the vertical magnetic field component Hv is at zero level as shown in FIG. 10B, where the erosion is sharp and V-shaped. Profile. If V-shaped erosion becomes significant, the target life is shortened.
On the other hand, the vertical magnetic field Hv is very large immediately above the central permanent magnet 20, and electrons are diffused on the target near this position, and the plasma density is extremely small. Therefore, here, erosion is not performed, but conversely, sputtered material from the surroundings is deposited. If it is an oxide, the target in the vicinity will be covered with an insulator, causing abnormal discharge.
In the sputtering apparatus having the magnetron magnetic field, the erosion profile is not necessarily U-shaped, and the vertical magnetic field component Hv has a strong tendency to be V-shaped erosion at the first and third target positions where the level is zero. Lifespan is not improved so much. In addition, the vertical magnetic field Hv is very large at the center of the target, and sputtered substances from the surroundings are deposited here to reduce the use efficiency of the target. If the substance is an oxide, it causes abnormal discharge.

  Among the conventional devices, the device of Patent Document 2 has a mechanism for swinging the magnetron magnetic field generating magnet on the back surface of a large area target. It is also explained that by providing a gap in the magnetic field generating magnet to secure a path for electron current, the plasma is stabilized and the change in sputtering voltage due to the position of the magnetron magnet can be minimized. However, the fluctuation of the sputtering voltage is an effect that is reduced to about ± 10 V when a gap is provided from ± 20 V when there is no gap. This is because the plasma moves on the target in a racetrack as the magnetron magnetic field generation magnet swings, so the electric field perpendicular to the target surface also changes and the plasma density does not become uniform over the entire target surface. It is done. Therefore, the influence of the plasma on the film on the substrate is not uniform depending on the position of the substrate, and the film quality of the formed thin film may not be uniform.

  Furthermore, among the conventional devices, the device of Patent Document 3 has a drive mechanism that moves the position of the magnetron magnet device on the back surface of the target for the purpose of improving the use efficiency of the target. In addition, the apparatus includes a drive mechanism that incorporates many magnetron magnet apparatuses having different sizes and circulates the back surfaces of the two targets. For this reason, since the number of parts of the magnet device is large and the drive mechanism is complicated, the reliability of the device is lowered, and the device cost and the maintenance cost are increased. In addition, the erosion area is limited, and it cannot be said that the target use efficiency has been remarkably improved.

  The present invention was made against the background of the above circumstances, and an object thereof is to provide a magnetron type sputtering apparatus that can effectively improve the usage efficiency of a sputtering target without requiring a complicated configuration. To do.

That is, in the magnetron type sputtering apparatus of the present invention, the first aspect of the present invention is such that a magnet and a shim are disposed so as to be located on the back side of the target installed in the apparatus and exert a magnetic force on the target surface side. In magnetron type sputtering equipment,
An outer peripheral magnet having a magnetic pole for generating the magnetic force, and a shim positioned on the inner peripheral side of the outer peripheral magnet, disposed along the outer peripheral edge of the target back surface;
The outer peripheral magnets are positioned at both ends of the target in the short axis direction, extend in the long axis direction of the target, have a long axis magnet portion having the magnetic poles having different polarities, and both ends of the target in the long axis direction Each of which is divided into two in the length direction and is composed of a short-axis magnet portion having the same magnetic pole as the adjacent long-axis magnet portion.

In addition, a magnetron type sputtering apparatus according to another aspect of the present invention is a magnetron type sputtering apparatus in which a magnet and a shim are arranged so as to exert a magnetic force on the target surface side located on the back side of a target installed in the apparatus. In
An outer peripheral magnet having a magnetic pole that generates the magnetic force and is arranged along an outer peripheral edge of the target back surface, an orbiting shim that is arranged around the inner peripheral side of the outer peripheral magnet with an interval from the outer peripheral magnet, and the target A central shim that extends along the long axis direction of the target at the center of the back surface and is arranged with an interval from the inner circumferential side of the orbiting shim; and
The outer peripheral magnets are positioned at both ends of the target in the short axis direction, extend in the long axis direction of the target, have a long axis magnet portion having the magnetic poles having different polarities, and both ends of the target in the long axis direction Each of which is divided into two in the length direction and has a short-axis magnet part having the same magnetic pole as the adjacent long-axis magnet part.

In this invention, it is comprised by the long axis magnet and the short axis magnet divided | segmented by the length direction. These long axis magnets and short axis magnets may be straight according to the external shape of the target, or may be formed in an arc shape according to the external shape of the target. For example, when the target has a substantially rectangular shape and the short axis shape has a semicircular arc shape, the shape of the long axis magnet portion is a straight shape, and the shape of the divided short axis magnet portion is a four semicircular arc shape.
In addition, the long-axis magnet part and the short-axis magnet parts at both ends adjacent to each other can be formed integrally, or can be configured separately. Further, the long axis magnet part and the short axis magnet part can be constituted by a plurality of magnets. The outer peripheral magnet is usually made of a permanent magnet, but a part or all of it may be made of an electromagnet.

  In the present invention, the horizontal magnetic field component Bh formed by the long-axis magnet portion arranged in the major axis direction along the outer periphery of the target is clearly in the minor axis (short side) direction, but is arranged in the minor axis direction of the target outer periphery. The horizontal magnetic field component Bh formed by the short axis magnet portion is curved so that the lines of magnetic force are schematically shown in FIG. Adjacent short axis magnet portions may be arranged without a gap, but may be arranged with a gap therebetween. The horizontal magnetic field component Bh that is curved is larger as the gap between adjacent short axis magnet portions is narrower. Therefore, the size of the horizontal magnetic field component Bh can be adjusted according to the size of the gap. That is, since the Lorentz force is applied to the electrons having the velocity component u orthogonal to the horizontal magnetic field component Bh in the direction orthogonal to both components (vector product−u × Bh direction), There is an advantage of adjusting (controlling) the rebound force of electrons.

  FIG. 4 shows an outline of the magnetic field lines (distribution) on the target surface. In the form in which the central shim and the orbiting shim are provided so as to surround the central shim at the center of the back surface of the target, the shape and arrangement position thereof are vertical and horizontal magnetic fields as shown in the graphs of FIGS. It is provided so that the distribution of is formed. The orbiting shim and the central shim can be made of a ferromagnetic material and are not limited to a specific material, and can be made of, for example, iron. The material may be different between the orbiting shim and the central shim.

  At seven target positions where the vertical magnetic field component falls below zero, the horizontal magnetic field component is maximized. Here, electrons draw a cycloid or trochoidal orbit in the direction of the vector cross product E × Bh of the electric field E perpendicular to the target surface and the horizontal magnetic field component Bh (direction perpendicular to both the horizontal magnetic field Bh and the electric field E). It drifts. (This is called the magnetron motion of electrons.) While drifting along this orbit, ions collide with neutral particles such as argon, and the ions collide toward the target. Electrons are emitted. The secondary electrons behave in the same way as the first electrons, so that ions are generated and the plasma grows.

Electrons in the most part of the target drift in the above trajectory and move to the end of the short side of the target or above the target that is not bound by the magnetic field. Since the horizontal magnetic field Bh is curved at the end as schematically shown in FIG. 3, the force acts in the direction perpendicular to both the electron movement direction v and the horizontal magnetic field Bh, and the electric field E The force due to also acts, and the electrons are rebounded at a certain angle. Subsequent electrons are affected by an electromagnetic field different from the magnetron motion, and move randomly on the target until they lose energy due to collision with neutral particles or ions, or until they are dissipated to a region where the magnetic force does not restrain them. This has been confirmed by electronic motion simulation. The above-described rebounding of electrons becomes remarkable when the curved magnetic force formed by the divided short axis magnet portions at both ends in the long axis direction is large. That is, it is desirable that the maximum horizontal magnetic field at the curved portion is 500 gauss or more. Below 500 gauss, if the applied force of the electric field is greater than the applied force of the magnetic field (Lorentz force), the electrons are drawn into the anode electrode to which a positive potential is applied, and are lost in collision.
The electron rebound is achieved by the configuration of the outer peripheral magnet described above.

The collision between electrons and neutral particles is determined by the mean free path λ of electrons calculated by the density distribution of the neutral particles and the absolute temperature. The electrons are considered to collide with the neutral particles at least once while moving through the mean free path λ. Therefore, the longer the travel distance of electrons drifting in a trochoidal orbit on the target, or the longer the track distance that moves to the area where the magnetic field restraint force does not reach, the more the number of collisions with neutral particles occurs. Ions to increase, and the plasma density also increases. In the sputtering apparatus of the present invention, for example, at a vacuum chamber pressure p = 0.5 [Pa] and a neutral particle energy temperature T = 300 to 1000 [K], an electron mean free process λ = 6.6 to 22 [cm]. It is. If the electron energy in the plasma is about 20 eV (for example, the first ionization voltage of argon is 15.8 V, and 15.8 V or more is necessary for the ionization of argon), the electron has a mean free path λ. The flight time τ = 20 to 68 [nsec] at which it collides with the neutral particles at least once during the movement. That is, if a voltage is applied to generate plasma from the magnetron power supply of the apparatus, and the electrons survive on the target at least at the above flight time τ = 20 to 68 [nsec] and do not continue to move, the electrons are neutral. It does not collide with the particles and therefore the plasma does not grow.
In the magnetron magnetic field of the present invention, as shown in the graphs of FIGS. 5 and 6, as described above, the distribution of the vertical magnetic field Bv and the horizontal magnetic field Bh is formed. As the magnetic field lines are schematically shown, the horizontal magnetic field Bh is curved, so that the electrons are rebounded at a certain angle, so that the electrons greatly exceed the above flight time τ = 20 to 68 [nsec]. Continue exercise on top. As a result, uniform erosion occurs on the target.

As described above, according to the magnetron type sputtering apparatus of the present invention, the generated plasma density is uniform over the entire target surface, the target erosion profile can be made substantially uniform, and the usage efficiency of the target. Is significantly improved and a long service life is possible. In addition, it is possible to obtain a good target erosion profile without requiring driving of magnets and shims and without requiring a complicated driving mechanism. Note that the present invention does not exclude driving of magnets and shims, and those that perform driving are also included in the scope of the invention.
The magnetron type sputtering apparatus of the present invention can be used for the production of a conductor electrode film, a superconductor thin film, a transparent conductive thin film, or various oriented thin films on a semiconductor substrate.

It is a top view which shows the magnetron type | mold sputtering device of one Embodiment of this invention. Similarly, it is the II-II sectional view taken on the line of FIG. 1 of the state which installed the target. Similarly, it is the perspective view which carried out the partial cross section which shows the typical magnetic force line (distribution) on a target. Similarly, it is the II-II sectional view taken on the line of FIG. 1 which shows the magnetic field lines in the vicinity of the target and shim. It is a graph which shows the horizontal direction magnetic field and the vertical direction magnetic field with respect to the target short-axis direction distance in the Example of this invention. Similarly, it is a graph which shows the horizontal direction magnetic field and the vertical direction magnetic field with respect to the target major axis direction distance. Similarly, it is a figure which shows the motion simulation of a single electron, and shows the mode (example) of the rebound of the electron in a long-axis direction edge part. Similarly, it is a motion simulation result of collective electrons, and is a diagram showing an electron position distribution (xy distribution) after 500 ns from the start of collective electron motion. Similarly, it is a motion simulation result of collective electrons, and is a diagram showing an electron position distribution (yz distribution) after 500 ns from the start of collective electron motion. It is a figure which shows the conventional magnetron sputtering device. It is a figure which shows the other conventional magnetron sputtering apparatus. It is a figure which shows the other conventional magnetron sputtering apparatus.

Below, one Embodiment of this invention is described based on FIG.
The target 5 installed in the apparatus has a long rectangular shape, and the outer peripheral magnet 1 is arranged so as to be located on the back side of the target 5 and along the outer peripheral edge of the target 5. . The outer peripheral magnet 1 is positioned so as to have a slight gap from the back surface of the installed target 5.
The outer peripheral magnet 1 is located on both sides of the target 5 in the short axis direction and extends in the long axis direction of the target 5 and the long axis magnet portions 2 and 3 extending in the long axis direction of the target 5 and divided in the length direction. Short axis magnet portions 2a, 2b, 3a, 3b. A gap is formed between the short axis magnet parts 2a and 3a and between the short axis magnet parts 2b and 3b. The long-axis magnet part 2 and the short-axis magnet parts 2a and 2b are integrally formed. However, in the present invention, it is possible to divide and configure these magnet portions. Moreover, the long axis magnet part 3 and the short axis magnet parts 3a and 3b are integrally formed. However, in the present invention, it is possible to divide and configure these magnet portions.

The long-axis magnet portions 2 and 3 have magnetic poles having different polarities on the surface facing the target back surface, the long-axis magnet portion 2 being an S pole and the long-axis magnet portion 3 being an N pole. . The short-axis magnet portions 2 a and 2 b that are continuous with the long-axis magnet portion 2 have the same magnetic pole as that of the long-axis magnet portion 2, that is, the S-pole, and the short-axis magnet portions 3 a and 3 b that are continuous with the long-axis magnet portion 3. Has the same magnetic pole as that of the long-axis magnet portion 3, that is, the N pole.
In the gaps in the short axis magnet parts 2a and 3a and the short axis magnet parts 2b and 3b, magnets having different polarity magnetic poles face each other. Since the horizontal magnetic field is curved at the end of the long axis including the gap, a force acts in a direction perpendicular to both the electron movement direction u and the horizontal magnetic field Bh, and a force by the electric field E also acts. The electrons are bounced at an angle. The distance of the gap is determined so as to obtain a horizontal magnetic field of the bending portion that enables the above-described action on electrons.

An iron orbiting shim 6 is disposed on the inner peripheral side of the outer peripheral magnet 1 with a distance from the outer peripheral magnet 1. The orbiting shim 6 has a racetrack shape in plan view, and is formed in a straight shape except for the corner portions at the four corners, and the outer peripheral side of the corner portions at the four corners is formed in an arc shape. By making the outer periphery side of the corner portion into an arc shape, a curved horizontal magnetic field is created by the magnetic field formed by the orbiting shim 6 and the short-axis magnet portions 2a, 3a, 2b, and 3b having the shape described above, and the electrons move perpendicularly to this. Acts as a rebounding force. The orbiting shim 6 has a plate shape and is formed thin. The orbiting shim 6 is disposed at a position where the upper surface substantially follows the back surface of the installed target 5. As a result, the magnetic field lines emitted from the outer peripheral magnet 1 are more effectively focused on the orbiting shim 6, and the vertical magnetic field component becomes a component that determines four positions at which the zero level is cut off. Further, the orbiting shim 6 is formed wider than a later-described central shim, and brings the lines of magnetic force closer to flatness and increases the horizontal magnetic field component.
An iron central shim 7 is disposed on the inner peripheral side of the orbiting shim 6 along the major axis direction at the center of the target 5. The central shim 7 is disposed with substantially the same gap as the inner peripheral side of the orbiting shim 6. The central shim 7 has a prismatic cross section and is formed thick. This strengthens the focusing of the magnetic force in the central portion and becomes a component that determines three positions where the vertical magnetic field component cuts off the zero level.
The shapes and arrangement positions of the orbiting shim 6 and the central shim 7 are preferably determined such that the magnetic field distribution (vertical magnetic field Bv and horizontal magnetic field Bh) shown in FIG.

The target 5, the racetrack-shaped orbital shim 6, and the prismatic central shim 7 are integrally cooled with a cooling member called a backing plate 9, and a negative potential is applied as a cathode. On the other hand, a vacuum chamber flange 10 is provided on the outer peripheral side of the backing plate 9 via an insulating spacer 8, and an anode 11 is attached to the upper side of the vacuum chamber flange 10 so as to face the upper surface of the target 5. Yes. The anode 11 has a positive potential and is usually set to the same potential as the ground potential.
Magnetron sputtering is performed by energizing the cathode, and the erosion of the target 5 is made uniform.

A simulation was performed under the following conditions using the magnetron type sputtering apparatus of the above embodiment.
The initial condition of collective electrons generated on the target is a Gaussian distribution where the standard deviation energy of 5000 electrons is 20 eV, and the initial position of 5000 electrons in the region 1 cm above the target from the target surface is a random distribution. Decide. Under the condition of the magnetron / sputtering magnetic field and electric field distribution of the above-mentioned form, 5000 electron populations start to move, and the movement of all electrons is simulated until 500 nsec elapses. The electrons that survived in the space are plotted on the (XY) plane and the (YZ) plane.

  FIG. 5 shows the vertical magnetic field Bv and the horizontal magnetic field Bh in a plane parallel to the target 3 mm above the target surface. Both are in a certain range of values over a wide area of the target. The vertical magnetic field Bv shows a distribution that passes through the zero level seven times, and three peaks and three valleys of the vertical magnetic field Bv are formed between the first and seventh times when the zero level is cut, and the absolute value of each peak and valley The value is within 200 gauss. The horizontal magnetic field component Bh is maximized at the first, third, fifth, and seventh target positions at which the vertical magnetic field component Bv falls below the zero level.

FIG. 6 shows the horizontal magnetic field distribution at the position in the target long axis direction. The curved portion of the magnetic field is located 23 to 26 cm from the center of the target, and the horizontal magnetic field Bh of the curved portion is 500 to 1000 gauss.
FIG. 7 is a diagram showing an electronic motion simulation. For example, the electron starts from the position coordinate (−16.5, 0) in the figure, turns around the position coordinate (−24.8, 0), and reaches the position coordinate (−4.5, −4.2). Follow the trajectory. The vicinity of the position coordinate (−24.8, 0) is near the gap that becomes the boundary of the magnetic field on the two short sides of the outer periphery of the target, and the horizontal magnetic field is very strong and the magnetic field is curved.

  8 and 9 show electron position distributions as a result of 5000 electron motion simulations in the sputtering apparatus of the present invention. The 5000 electrons at the start of motion survive about 85% by the first 500 [nsec] and are distributed almost uniformly on the target. 8 shows an xy distribution (x: long side direction, y: short side direction), and FIG. 9 shows a yz distribution (y: short side direction, z: height direction). In FIG. 8, the position of the target is in the range of x = −26 to 26 and y = −6 to 6 and in FIG. 9 is in the range of y = −6 to 6 and z = 4.5 to 5. As described above, the electrons survive with a probability of about 85% from the start of movement to 500 [nsec] and are distributed almost uniformly on the target, so that the number of collisions between the electrons and neutral particles increases. Ions increase and plasma density increases.

  As mentioned above, although this invention was demonstrated based on the said embodiment, this invention is not limited to the content of the said description, As long as it does not deviate from the scope of the present invention, an appropriate change is possible.

DESCRIPTION OF SYMBOLS 1 Outer magnet 2 Long axis magnet part 3 Long axis magnet part 2a Short axis magnet part 2b Short axis magnet part 3a Short axis magnet part 3b Short axis magnet part 6 Circumferential shim 7 Central shim 8 Insulating spacer 9 Backing plate 10 Vacuum chamber flange 11 anode

Claims (6)

In a magnetron type sputtering apparatus in which a magnet and a shim are arranged so as to exert a magnetic force on the target surface side located on the back side of a target installed in the apparatus,
An outer peripheral magnet having a magnetic pole for generating the magnetic force, and a shim positioned on the inner peripheral side of the outer peripheral magnet, disposed along the outer peripheral edge of the target back surface;
The outer peripheral magnets are positioned at both ends of the target in the short axis direction, extend in the long axis direction of the target, have a long axis magnet portion having the magnetic poles having different polarities, and both ends of the target in the long axis direction A magnetron type sputtering apparatus comprising: a short-axis magnet portion that is divided into two in the length direction and has the same magnetic pole as the adjacent long-axis magnet portion. In a magnetron type sputtering apparatus in which a magnet and a shim are arranged so as to exert a magnetic force on the target surface side located on the back side of a target installed in the apparatus,
An outer peripheral magnet having a magnetic pole that generates the magnetic force and is arranged along an outer peripheral edge of the target back surface, an orbiting shim that is arranged around the inner peripheral side of the outer peripheral magnet with an interval from the outer peripheral magnet, and the target A central shim that extends along the long axis direction of the target at the center of the back surface and is arranged with an interval from the inner circumferential side of the orbiting shim; and
The outer peripheral magnets are positioned at both ends of the target in the short axis direction, extend in the long axis direction of the target, have a long axis magnet portion having the magnetic poles having different polarities, and both ends of the target in the long axis direction A magnetron type sputtering apparatus, comprising: a short-axis magnet unit that is divided into two in the length direction and has the same magnetic pole as the adjacent long-axis magnet unit.   The one long-axis magnet part and the short-axis magnet parts at both ends adjacent to the long-axis magnet part are integrally formed or divided and arranged. The magnetron type sputtering apparatus according to 1 or 2.   The magnetron type sputtering apparatus according to any one of claims 1 to 3, wherein the short axis magnet part is disposed with a gap between adjacent short axis magnet parts.   The magnetron type sputtering apparatus according to claim 2, wherein the orbiting shim has a plate shape, and the central shim has a thicker prismatic body than the orbiting shim.   A magnetic force that is curved toward the center side of the target is formed by the divided short axis magnet portions at both ends of the long axis direction, and a maximum horizontal magnetic field at the curved portion is 500 gauss or more. Item 6. The magnetron type sputtering apparatus according to any one of Items 1 to 5.