KR960005771A - 마그네트론스퍼터링장치 - Google Patents

마그네트론스퍼터링장치 Download PDF

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Publication number
KR960005771A
KR960005771A KR1019950020093A KR19950020093A KR960005771A KR 960005771 A KR960005771 A KR 960005771A KR 1019950020093 A KR1019950020093 A KR 1019950020093A KR 19950020093 A KR19950020093 A KR 19950020093A KR 960005771 A KR960005771 A KR 960005771A
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KR
South Korea
Prior art keywords
target
magnetron sputtering
sputtering apparatus
magnet
ring
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Application number
KR1019950020093A
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English (en)
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KR0165860B1 (ko
Inventor
마사히데 요코야마
히로시 하야타
Original Assignee
모리시타 요이찌
마쯔시다덴기산교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 모리시타 요이찌, 마쯔시다덴기산교 가부시기가이샤 filed Critical 모리시타 요이찌
Publication of KR960005771A publication Critical patent/KR960005771A/ko
Application granted granted Critical
Publication of KR0165860B1 publication Critical patent/KR0165860B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

본 발명은, 링형상의 평판타깃을 가진 마그네트론스퍼터링장치에 관한 것으로서, 타깃의 이용효율이 높고, 막두께분포의 경시변화가 적은 링형상타깃을 이용한 마그네트론스퍼터링장치를 제공하는 것을 특징으로 한 것이며, 그 구성에 있어서, 링형상의 평판의 타깃(2)을 가진 마그네트론스퍼터링장치에 있어서, 상기 타깃(2)의 내주연부를 따른 위치의 상기 타깃(2)의 표면쪽과 이면쪽에 각각 동일극성을 가진 자석(33),(31)을 배치하고, 상기 타깃의 외주연부를 따른 위치의 상기 타깃(2)의 표면쪽과 이면쪽에 각각 동일극성을 가진 자석(34),(32)을 배치하고, 상기 타깃(2)의 내주를 따라서 배치된 상기 자석과, 상기 타깃의 외주를 따라서 배치된 상기 자석과의 극성이 타깃(2)을 사이에 두고 반대의 관계가 되도록 정한 것을 특징으로 한 것이다.

Description

마그네트론스퍼터링장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예를 표시한 도면.
제2도는 동실시예에 있어서의 자장의 모양을 표시한 도면.
제3도는 동실시예의 타깃의 이용한계에 있어서의 침식면을 표시한 도면.
제4도는 동실시예의 타깃의 침식면의 경시변화를 표시한 도면.
제5도는 동실시예의 타깃의 침식면의 깊이의 경시변화를 표시한 도면.
제6도는 동실시예의 기판의 성막속도의 경시변화를 표시한 도면.
제7도는 동실시예의 기판의 막두께의 분포모양의 경시변화를 표시한 도면.

Claims (2)

  1. 링형상의 평판의 타깃을 가진 마그네트론스퍼터링장치에 있어서, 상기 타깃의 내주연부를 따른 위치의 상기 타깃의 표면쪽과 이면쪽에 각각 동일 극성을 가진 자석을 배치하고, 상기 타깃의 외주연부를 따른 위치의 상기 타깃의 표면쪽과 이면쪽에 각각 동일 극성을 가진 자석을 배치하고, 상기 타깃의 내주를 따라서 배치된 상기 자석과, 상기 타깃의 외주를 따라서 배치된 상기 자석과의 극성이 타깃을 사이에 두고 반대의 관계가 되도록 정한 것을 특징으로 하는 마그네트론스퍼터링장치.
  2. 제1항에 있어서, 타깃의 표면에서 자장의 방향이 타깃면에 평행으로 되는 점이 타깃의 반경방향에 2이상 존재하도록 각각의 자석의 강도를 조정한 것을 특징으로 하는 마그네트론스퍼터링장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950020093A 1994-07-08 1995-07-08 마그네트론스퍼터링장치 KR0165860B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-157531 1994-07-08
JP15753194 1994-07-08

Publications (2)

Publication Number Publication Date
KR960005771A true KR960005771A (ko) 1996-02-23
KR0165860B1 KR0165860B1 (ko) 1999-01-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950020093A KR0165860B1 (ko) 1994-07-08 1995-07-08 마그네트론스퍼터링장치

Country Status (3)

Country Link
US (1) US5558749A (ko)
KR (1) KR0165860B1 (ko)
CN (1) CN1067118C (ko)

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US9631271B2 (en) 2013-07-25 2017-04-25 Samsung Display Co., Ltd. Sputtering system and method of fabricating display device using the same

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US6569294B1 (en) * 1999-07-15 2003-05-27 Seagate Technology Llc Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone
US6468405B1 (en) * 1999-07-15 2002-10-22 Seagate Technology Llc Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone
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US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
KR101097329B1 (ko) * 2010-01-11 2011-12-23 삼성모바일디스플레이주식회사 스퍼터링 장치
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US9605341B2 (en) * 2013-03-06 2017-03-28 Applied Materials, Inc. Physical vapor deposition RF plasma shield deposit control
US10283334B2 (en) * 2014-08-22 2019-05-07 Applied Materials, Inc. Methods and apparatus for maintaining low non-uniformity over target life
KR102018542B1 (ko) 2017-03-02 2019-09-05 조연수 신발창과 일체화된 기능부를 가지는 신발 및 그 제조방법
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US9631271B2 (en) 2013-07-25 2017-04-25 Samsung Display Co., Ltd. Sputtering system and method of fabricating display device using the same

Also Published As

Publication number Publication date
US5558749A (en) 1996-09-24
KR0165860B1 (ko) 1999-01-15
CN1120601A (zh) 1996-04-17
CN1067118C (zh) 2001-06-13

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