KR910016147A - 반도체 집적회로 장치 - Google Patents

반도체 집적회로 장치 Download PDF

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Publication number
KR910016147A
KR910016147A KR1019910002227A KR910002227A KR910016147A KR 910016147 A KR910016147 A KR 910016147A KR 1019910002227 A KR1019910002227 A KR 1019910002227A KR 910002227 A KR910002227 A KR 910002227A KR 910016147 A KR910016147 A KR 910016147A
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KR
South Korea
Prior art keywords
field effect
integrated circuit
circuit device
effect transistors
semiconductor integrated
Prior art date
Application number
KR1019910002227A
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English (en)
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KR940009363B1 (ko
Inventor
히로시 이와사키
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910016147A publication Critical patent/KR910016147A/ko
Application granted granted Critical
Publication of KR940009363B1 publication Critical patent/KR940009363B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors

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  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Shift Register Type Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체 집적회로 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 장치의 패턴평면도, 제2도는 제1도에 나타낸 장치의 등가회로도, 제3도는 제1실시예의 변형예에 따른 패턴평면도.

Claims (4)

  1. 부하로서의 공핍형 전계효과트랜지스터(Q1,Q3,Q6)와, 스위칭용으로서의 증가형 전계효과트랜지스터(Q2,Q4,Q5,Q7,Q8)가 직렬로 접속되어 구성된 반도체집적회로장치에 있어서, 상기 공핍형 전계효과트랜지스터(Q1,Q3,Q6)의 게이트길이(Lg1)가 상기 증가형 전계효과트랜지스터(Q2,Q4,Q5,Q7,Q8)의 게이트길이(Lg2)보다 길게 설정되어 있는 것을 특징으로 하는 반도체집적회로장치.
  2. 제1항에 있어서, 상기 공핍형 전계효과트랜지스터(Q1,Q3,Q6)의 게이트 길이(Lg1)가 상기 증가형 전계효과트랜지스터(Q2,Q4,Q5,Q7,Q8)의 게이트길이(Lg2)의 1,5배 이상으로 설정되어 있는 것을 특징으로 하는 반도체집적회로장치.
  3. 제1항에 있어서, 상기 공핍형 전계효과트랜지스터(Q1,Q3,Q6)및 증가 형 전계효과트랜지스터(Q2,Q4,Q5,Q7,Q8)는 모두 MESFET인 특징으로 하는 반도체집적회로장치.
  4. 제1항에 있어서, 상기 공핍형 전계효과트랜지스터(Q1,Q3,Q6)및 증가 형 전계효과트랜지스터(Q2,Q4,Q5,Q7,Q8)는 모두 화합물반도체기판상에 형성된 MESFET인 특징으로 하는 반도체집적회로장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910002227A 1990-02-14 1991-02-09 반도체 집적회로장치 KR940009363B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02-032698 1990-02-14
JP2032698A JP2513887B2 (ja) 1990-02-14 1990-02-14 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR910016147A true KR910016147A (ko) 1991-09-30
KR940009363B1 KR940009363B1 (ko) 1994-10-07

Family

ID=12366074

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910002227A KR940009363B1 (ko) 1990-02-14 1991-02-09 반도체 집적회로장치

Country Status (5)

Country Link
US (1) US5148244A (ko)
EP (1) EP0442413B1 (ko)
JP (1) JP2513887B2 (ko)
KR (1) KR940009363B1 (ko)
DE (1) DE69132263T2 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160717A (ja) * 1991-12-03 1993-06-25 Nec Corp Ｎａｎｄ回路
JP3367776B2 (ja) * 1993-12-27 2003-01-20 株式会社東芝 半導体装置
US5616935A (en) * 1994-02-08 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit having N-channel and P-channel transistors
JP2757848B2 (ja) * 1996-01-23 1998-05-25 日本電気株式会社 電界効果型半導体装置
US5959336A (en) * 1996-08-26 1999-09-28 Advanced Micro Devices, Inc. Decoder circuit with short channel depletion transistors
JP3527034B2 (ja) * 1996-09-20 2004-05-17 株式会社半導体エネルギー研究所 半導体装置
JPH11214528A (ja) * 1998-01-29 1999-08-06 Mitsubishi Electric Corp 半導体装置
EP1003222A1 (en) * 1998-11-19 2000-05-24 STMicroelectronics S.r.l. Improved field-effect transistor and corresponding manufacturing method
US7589007B2 (en) * 1999-06-02 2009-09-15 Arizona Board Of Regents For And On Behalf Of Arizona State University MESFETs integrated with MOSFETs on common substrate and methods of forming the same
US6864131B2 (en) * 1999-06-02 2005-03-08 Arizona State University Complementary Schottky junction transistors and methods of forming the same
JP2003007727A (ja) * 2001-06-22 2003-01-10 Sanyo Electric Co Ltd 化合物半導体装置
KR100654053B1 (ko) * 2005-12-29 2006-12-05 동부일렉트로닉스 주식회사 부가 게이트 도체 패턴을 갖는 협채널 금속 산화물 반도체트랜지스터
GB2438677B (en) * 2006-05-31 2011-08-10 Filtronic Compound Semiconductors Ltd A field effect transistor having multiple pinch off voltages
JP5322169B2 (ja) * 2009-08-28 2013-10-23 独立行政法人産業技術総合研究所 炭化珪素絶縁ゲート電界効果トランジスタを用いたインバータ回路および論理ゲート回路
JP5525249B2 (ja) * 2009-12-08 2014-06-18 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
US8999791B2 (en) 2013-05-03 2015-04-07 International Business Machines Corporation Formation of semiconductor structures with variable gate lengths
US11018134B2 (en) 2017-09-26 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
EP3766102B1 (en) 2018-03-14 2022-08-31 Emberion Oy Surface mesfet

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810751B2 (ja) * 1983-12-23 1996-01-31 株式会社日立製作所 半導体装置
JPS60176277A (ja) * 1984-02-22 1985-09-10 Nec Corp ガリウム砒素集積回路
JPS60183764A (ja) * 1984-03-02 1985-09-19 Oki Electric Ind Co Ltd ＧａＡｓ論理回路装置
US4777517A (en) * 1984-11-29 1988-10-11 Fujitsu Limited Compound semiconductor integrated circuit device
JPS62206887A (ja) * 1986-03-07 1987-09-11 Toshiba Corp ＧａＡｓ集積回路
FR2603146B1 (fr) * 1986-08-19 1988-11-10 Thomson Csf Source de courant de type charge active et son procede de realisation
JPS6346779A (ja) * 1986-08-15 1988-02-27 Nec Corp 半導体装置
US4701646A (en) * 1986-11-18 1987-10-20 Northern Telecom Limited Direct coupled FET logic using a photodiode for biasing or level-shifting
JPS63156367A (ja) * 1986-12-20 1988-06-29 Fujitsu Ltd レベル・シフト・ダイオ−ド
JPS6411363A (en) * 1987-07-03 1989-01-13 Matsushita Electric Ind Co Ltd Read storage element
JPH01227478A (ja) * 1988-03-08 1989-09-11 Fujitsu Ltd 半導体装置
JPH01241180A (ja) * 1988-03-23 1989-09-26 Toshiba Corp 半導体装置及びその製造方法
JPH02148740A (ja) * 1988-11-29 1990-06-07 Fujitsu Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP0442413A3 (ko) 1994-02-02
KR940009363B1 (ko) 1994-10-07
EP0442413B1 (en) 2000-06-28
EP0442413A2 (en) 1991-08-21
JP2513887B2 (ja) 1996-07-03
JPH03236274A (ja) 1991-10-22
DE69132263T2 (de) 2000-11-30
US5148244A (en) 1992-09-15
DE69132263D1 (de) 2000-08-03

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