JPS6411363A - Read storage element - Google Patents
Read storage elementInfo
- Publication number
- JPS6411363A JPS6411363A JP16719387A JP16719387A JPS6411363A JP S6411363 A JPS6411363 A JP S6411363A JP 16719387 A JP16719387 A JP 16719387A JP 16719387 A JP16719387 A JP 16719387A JP S6411363 A JPS6411363 A JP S6411363A
- Authority
- JP
- Japan
- Prior art keywords
- length
- gate electrode
- transistor
- diffusion layer
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To lower a cost by reducing one process related to a mask and to prevent a drop in a yield rate by a method wherein a length of a gate electrode in a depletion transistor is shortened as compared with that of an ordinary enhancement transistor. CONSTITUTION:A source-drain diffusion layer 2 is situated in such a way that it is sandwiched between oxide films 1; gate electrodes 3 are formed in such a way that they cross the source-drain diffusion layer 2. What is different from a conventional setup is that depletion transistors 4 are constituted not by an additional VT controlled ion implantation method but by shortening a length of a gate electrode. A concrete difference of the length of the gate electrode is about 0.3-0.8mum; it is not necessary to control the length so accurately as the length of the gate electrode of an ordinary transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16719387A JPS6411363A (en) | 1987-07-03 | 1987-07-03 | Read storage element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16719387A JPS6411363A (en) | 1987-07-03 | 1987-07-03 | Read storage element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6411363A true JPS6411363A (en) | 1989-01-13 |
Family
ID=15845152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16719387A Pending JPS6411363A (en) | 1987-07-03 | 1987-07-03 | Read storage element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6411363A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02210698A (en) * | 1989-02-10 | 1990-08-22 | Fujitsu Ltd | Semiconductor memory device |
US5148244A (en) * | 1990-02-14 | 1992-09-15 | Kabushiki Kaisha Toshiba | Enhancement-fet and depletion-fet with different gate length formed in compound semiconductor substrate |
CN103928308A (en) * | 2013-01-11 | 2014-07-16 | 中芯国际集成电路制造(上海)有限公司 | Transistor grid electrode array with different lengths and preparation method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57128958A (en) * | 1981-02-02 | 1982-08-10 | Sharp Corp | Semiconductor device |
JPS6127673A (en) * | 1984-07-17 | 1986-02-07 | Mitsubishi Electric Corp | Read only semiconductor memory |
JPS6199366A (en) * | 1984-09-29 | 1986-05-17 | Toshiba Corp | Semiconductor device and manufacture thereof |
-
1987
- 1987-07-03 JP JP16719387A patent/JPS6411363A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57128958A (en) * | 1981-02-02 | 1982-08-10 | Sharp Corp | Semiconductor device |
JPS6127673A (en) * | 1984-07-17 | 1986-02-07 | Mitsubishi Electric Corp | Read only semiconductor memory |
JPS6199366A (en) * | 1984-09-29 | 1986-05-17 | Toshiba Corp | Semiconductor device and manufacture thereof |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02210698A (en) * | 1989-02-10 | 1990-08-22 | Fujitsu Ltd | Semiconductor memory device |
US5148244A (en) * | 1990-02-14 | 1992-09-15 | Kabushiki Kaisha Toshiba | Enhancement-fet and depletion-fet with different gate length formed in compound semiconductor substrate |
CN103928308A (en) * | 2013-01-11 | 2014-07-16 | 中芯国际集成电路制造(上海)有限公司 | Transistor grid electrode array with different lengths and preparation method thereof |
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