JPS6411363A - Read storage element - Google Patents

Read storage element

Info

Publication number
JPS6411363A
JPS6411363A JP16719387A JP16719387A JPS6411363A JP S6411363 A JPS6411363 A JP S6411363A JP 16719387 A JP16719387 A JP 16719387A JP 16719387 A JP16719387 A JP 16719387A JP S6411363 A JPS6411363 A JP S6411363A
Authority
JP
Japan
Prior art keywords
length
gate electrode
transistor
diffusion layer
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16719387A
Other languages
Japanese (ja)
Inventor
Hitoshi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16719387A priority Critical patent/JPS6411363A/en
Publication of JPS6411363A publication Critical patent/JPS6411363A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To lower a cost by reducing one process related to a mask and to prevent a drop in a yield rate by a method wherein a length of a gate electrode in a depletion transistor is shortened as compared with that of an ordinary enhancement transistor. CONSTITUTION:A source-drain diffusion layer 2 is situated in such a way that it is sandwiched between oxide films 1; gate electrodes 3 are formed in such a way that they cross the source-drain diffusion layer 2. What is different from a conventional setup is that depletion transistors 4 are constituted not by an additional VT controlled ion implantation method but by shortening a length of a gate electrode. A concrete difference of the length of the gate electrode is about 0.3-0.8mum; it is not necessary to control the length so accurately as the length of the gate electrode of an ordinary transistor.
JP16719387A 1987-07-03 1987-07-03 Read storage element Pending JPS6411363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16719387A JPS6411363A (en) 1987-07-03 1987-07-03 Read storage element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16719387A JPS6411363A (en) 1987-07-03 1987-07-03 Read storage element

Publications (1)

Publication Number Publication Date
JPS6411363A true JPS6411363A (en) 1989-01-13

Family

ID=15845152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16719387A Pending JPS6411363A (en) 1987-07-03 1987-07-03 Read storage element

Country Status (1)

Country Link
JP (1) JPS6411363A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210698A (en) * 1989-02-10 1990-08-22 Fujitsu Ltd Semiconductor memory device
US5148244A (en) * 1990-02-14 1992-09-15 Kabushiki Kaisha Toshiba Enhancement-fet and depletion-fet with different gate length formed in compound semiconductor substrate
CN103928308A (en) * 2013-01-11 2014-07-16 中芯国际集成电路制造(上海)有限公司 Transistor grid electrode array with different lengths and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128958A (en) * 1981-02-02 1982-08-10 Sharp Corp Semiconductor device
JPS6127673A (en) * 1984-07-17 1986-02-07 Mitsubishi Electric Corp Read only semiconductor memory
JPS6199366A (en) * 1984-09-29 1986-05-17 Toshiba Corp Semiconductor device and manufacture thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128958A (en) * 1981-02-02 1982-08-10 Sharp Corp Semiconductor device
JPS6127673A (en) * 1984-07-17 1986-02-07 Mitsubishi Electric Corp Read only semiconductor memory
JPS6199366A (en) * 1984-09-29 1986-05-17 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210698A (en) * 1989-02-10 1990-08-22 Fujitsu Ltd Semiconductor memory device
US5148244A (en) * 1990-02-14 1992-09-15 Kabushiki Kaisha Toshiba Enhancement-fet and depletion-fet with different gate length formed in compound semiconductor substrate
CN103928308A (en) * 2013-01-11 2014-07-16 中芯国际集成电路制造(上海)有限公司 Transistor grid electrode array with different lengths and preparation method thereof

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