DE69132263D1 - In einem Verbundhalbleitersubstrat gefertigter integrierter E/D Schaltkreis - Google Patents
In einem Verbundhalbleitersubstrat gefertigter integrierter E/D SchaltkreisInfo
- Publication number
- DE69132263D1 DE69132263D1 DE69132263T DE69132263T DE69132263D1 DE 69132263 D1 DE69132263 D1 DE 69132263D1 DE 69132263 T DE69132263 T DE 69132263T DE 69132263 T DE69132263 T DE 69132263T DE 69132263 D1 DE69132263 D1 DE 69132263D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated
- semiconductor substrate
- compound semiconductor
- circuit manufactured
- manufactured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Junction Field-Effect Transistors (AREA)
- Logic Circuits (AREA)
- Shift Register Type Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2032698A JP2513887B2 (ja) | 1990-02-14 | 1990-02-14 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69132263D1 true DE69132263D1 (de) | 2000-08-03 |
DE69132263T2 DE69132263T2 (de) | 2000-11-30 |
Family
ID=12366074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69132263T Expired - Fee Related DE69132263T2 (de) | 1990-02-14 | 1991-02-11 | In einem Verbundhalbleitersubstrat gefertigter integrierter E/D Schaltkreis |
Country Status (5)
Country | Link |
---|---|
US (1) | US5148244A (de) |
EP (1) | EP0442413B1 (de) |
JP (1) | JP2513887B2 (de) |
KR (1) | KR940009363B1 (de) |
DE (1) | DE69132263T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05160717A (ja) * | 1991-12-03 | 1993-06-25 | Nec Corp | Nand回路 |
JP3367776B2 (ja) * | 1993-12-27 | 2003-01-20 | 株式会社東芝 | 半導体装置 |
US5616935A (en) * | 1994-02-08 | 1997-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit having N-channel and P-channel transistors |
JP2757848B2 (ja) * | 1996-01-23 | 1998-05-25 | 日本電気株式会社 | 電界効果型半導体装置 |
US5959336A (en) * | 1996-08-26 | 1999-09-28 | Advanced Micro Devices, Inc. | Decoder circuit with short channel depletion transistors |
JP3527034B2 (ja) * | 1996-09-20 | 2004-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JPH11214528A (ja) * | 1998-01-29 | 1999-08-06 | Mitsubishi Electric Corp | 半導体装置 |
EP1003222A1 (de) * | 1998-11-19 | 2000-05-24 | STMicroelectronics S.r.l. | Verbesserter Feldeffekttransistor und Verfahren zu dessen Herstellung |
US6864131B2 (en) * | 1999-06-02 | 2005-03-08 | Arizona State University | Complementary Schottky junction transistors and methods of forming the same |
US7589007B2 (en) * | 1999-06-02 | 2009-09-15 | Arizona Board Of Regents For And On Behalf Of Arizona State University | MESFETs integrated with MOSFETs on common substrate and methods of forming the same |
JP2003007727A (ja) * | 2001-06-22 | 2003-01-10 | Sanyo Electric Co Ltd | 化合物半導体装置 |
KR100654053B1 (ko) * | 2005-12-29 | 2006-12-05 | 동부일렉트로닉스 주식회사 | 부가 게이트 도체 패턴을 갖는 협채널 금속 산화물 반도체트랜지스터 |
GB2438677B (en) | 2006-05-31 | 2011-08-10 | Filtronic Compound Semiconductors Ltd | A field effect transistor having multiple pinch off voltages |
JP5322169B2 (ja) * | 2009-08-28 | 2013-10-23 | 独立行政法人産業技術総合研究所 | 炭化珪素絶縁ゲート電界効果トランジスタを用いたインバータ回路および論理ゲート回路 |
JP5525249B2 (ja) * | 2009-12-08 | 2014-06-18 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
US8999791B2 (en) | 2013-05-03 | 2015-04-07 | International Business Machines Corporation | Formation of semiconductor structures with variable gate lengths |
US11018134B2 (en) * | 2017-09-26 | 2021-05-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP7046212B2 (ja) | 2018-03-14 | 2022-04-01 | エンベリオン オイ | 表面mesfet |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0810751B2 (ja) * | 1983-12-23 | 1996-01-31 | 株式会社日立製作所 | 半導体装置 |
JPS60176277A (ja) * | 1984-02-22 | 1985-09-10 | Nec Corp | ガリウム砒素集積回路 |
JPS60183764A (ja) * | 1984-03-02 | 1985-09-19 | Oki Electric Ind Co Ltd | GaAs論理回路装置 |
US4777517A (en) * | 1984-11-29 | 1988-10-11 | Fujitsu Limited | Compound semiconductor integrated circuit device |
JPS62206887A (ja) * | 1986-03-07 | 1987-09-11 | Toshiba Corp | GaAs集積回路 |
FR2603146B1 (fr) * | 1986-08-19 | 1988-11-10 | Thomson Csf | Source de courant de type charge active et son procede de realisation |
JPS6346779A (ja) * | 1986-08-15 | 1988-02-27 | Nec Corp | 半導体装置 |
US4701646A (en) * | 1986-11-18 | 1987-10-20 | Northern Telecom Limited | Direct coupled FET logic using a photodiode for biasing or level-shifting |
JPS63156367A (ja) * | 1986-12-20 | 1988-06-29 | Fujitsu Ltd | レベル・シフト・ダイオ−ド |
JPS6411363A (en) * | 1987-07-03 | 1989-01-13 | Matsushita Electric Ind Co Ltd | Read storage element |
JPH01227478A (ja) * | 1988-03-08 | 1989-09-11 | Fujitsu Ltd | 半導体装置 |
JPH01241180A (ja) * | 1988-03-23 | 1989-09-26 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH02148740A (ja) * | 1988-11-29 | 1990-06-07 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
1990
- 1990-02-14 JP JP2032698A patent/JP2513887B2/ja not_active Expired - Lifetime
-
1991
- 1991-02-09 KR KR1019910002227A patent/KR940009363B1/ko not_active IP Right Cessation
- 1991-02-11 US US07/653,294 patent/US5148244A/en not_active Expired - Lifetime
- 1991-02-11 DE DE69132263T patent/DE69132263T2/de not_active Expired - Fee Related
- 1991-02-11 EP EP91101864A patent/EP0442413B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR940009363B1 (ko) | 1994-10-07 |
EP0442413A2 (de) | 1991-08-21 |
EP0442413A3 (de) | 1994-02-02 |
US5148244A (en) | 1992-09-15 |
JP2513887B2 (ja) | 1996-07-03 |
KR910016147A (ko) | 1991-09-30 |
DE69132263T2 (de) | 2000-11-30 |
JPH03236274A (ja) | 1991-10-22 |
EP0442413B1 (de) | 2000-06-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |