KR910010223A - 배선재료 및 이것을 이용한 액정표시장치 - Google Patents

배선재료 및 이것을 이용한 액정표시장치 Download PDF

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KR910010223A
KR910010223A KR1019900019728A KR900019728A KR910010223A KR 910010223 A KR910010223 A KR 910010223A KR 1019900019728 A KR1019900019728 A KR 1019900019728A KR 900019728 A KR900019728 A KR 900019728A KR 910010223 A KR910010223 A KR 910010223A
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alloy
alloys
tan
layer
metal
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KR1019900019728A
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KR970009491B1 (ko
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미쯔히시 이게다
미찌오 무로오까
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아오이 죠이찌
가부시끼가이샤 도시바
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

내용 없음

Description

배선재료 및 이것을 이용한 액정표시장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도, 제2도 및 제3도는 본 발명에 관한 적층형 배선재료의 특성예를 나타낸 곡선도.

Claims (7)

  1. TaN 합금, Ta-Mo-N 합금, Ta-Nb-N 합금 및 Ta-W-N 합금으로 이루어진 군에서 선택된 적어도 1종의 금속으로 구성된 제1의 금속층과, 전술한 제1의 합금층상에 일체적으로 형성된 Ta, Ta-Mo 합금,Ta-Nb 합금, Ta-W 합금, Ta-N 합금, Ta-Mo-N 합금, Ta-Nb-N 합금 및 Ta-W-N 합금으로 이루어진 군에서 선택된 적어도 한종의 금속으로 구성된 제2의 금속층으로 이루어진 것을 특징으로 하는 적층형 배선재료(단, 제2층 Mo의 조성비는 26원자% 이하, Nb,W 의 조성비는 각각 40원자% 이하.)
  2. 제1항에 있어서, TaN 합금을 제1의 금속으로 하는 전술한 제1의 TaN 합금보다도 N 의 함유량이 적은 (0을 포함) TaN 합금을 제2의 금속으로 하는 것을 특징으로 하는 적층형 배선재료.
  3. 제1항에 있어서, 제1의 금속으로 하는 TaN 합금속상에 일체적으로 형성된 제2의 금속층으로 하여 TaN 합금 층의 적어도 표면이 산화막화하여 이루어진 것을 특징으로 하는 적층형 배선재료.
  4. 절연성 기판과, 전술한 절연성 기판면에 설치된 전자소자와, 전술한 전자소자에 전기적으로 접속하는 절연성 기판면에 설치된 구동용 배선을 구비하여 이루어진 전자장치에 있어서, 전술한 구동용 배선이 TaN 합금, Ta-Mo-N 합금,Ta-Nb-N 합금, Ta-W-N 합금으로 이루어진 군에서 선택된 적어도 1종의 금속으로 구성된 제1의 금속층과, 전술한 제1의 및 합금 층상에 일체적으로 형성된 Ta,Ta-Mo 합금, Ta-Nb 합금, Ta-W 합금, Ta-N 합금,Ta-Mo-N 합금, Ta-Nb-N 합금 및 Ta-W-N 합금으로 이루어진 군에서 선택된 적어도 1종의 금속으로 구성된 제2의 금속층으로 이루어진 적층형의 배선재료(단 Mo 의 조성비는 26원자% 이하, Nb·W 의 조성비는 각각 40원자% 이하)로 형성되어 있는 것을 특징으로 하는 전자장치.
  5. 구동용 배선기판과, 전술한 구동용 배선기판에 대향하여 설치된 표시전극판과 전술한 구동용 배선기판-표시전극판 사이에 전체적으로 액체가 봉입된 액정재료 층을 구비한 액정표시장치에 있어서, 구동용 신호배선 혹은 구동용 배선기판에 탑재, 장치된 전자부품 소자의 전극이 TaN 합금, Ta-Mo-N 합금,Ta-Nb-N 합금 및 Ta-W-N 합금으로 이루어진 군에서 선택된 적어도 1종의 금속으로 구성된 제1의 금속층과, 전술한 제1의 합금층상에 일체적으로 형성된 Ta,Ta-Mo 합금, Ta-Nb 합금, Ta-W 합금, Ta-N 합금,Ta-Mo-N 합금,Ta-Nb-N 합금 및 Ta-W-N 합금으로 이루어진 군에서 선택된 적어도 1종의 금속으로 구성된 제2의 금속층으로 이루어진 적층형의 배선재료(단 Mo 의 조성비는 26원자%이하, Nb·W 의 조성비는 각각 40원자% 이하)로 이루어진 적층형의 배선 재료로 형성되어 있는 것을 특징으로 하는 액정 표시장치.
  6. 제5항에 있어서, 구동용 신호배선 혹은 구동용 배선기판에 탑재, 장치된 전자부품 소자의 전극이 TaN 을 제1의 합금층으로 하고, 전술한 TaN 합금층상에 일체적으로 형성된 제1의 합금층을 이루는 TaN 에서 N 의 함유량이 적은 (0을 포함) TaN 을 제2의 합금층으로 이루어진 적층형의 배선재료로 형성되어 있는 것을 특징으로 하는 액정표시장치.
  7. 구동용 배선기판과 전술한 구동용 배선기판에 대향하여 설치된 표시전극판과, 전술한 구동용 배선기판 - 표시전극판 사이에 전체적으로 액체가 봉입된 액정재료층을 구비한 액정표시 장치에 있어서, 구동용 신호배선이 혹은 구동용 배선기판에 탑재, 장치된 전자부품 소장의 전극이 TaN 을 제1의 합금층으로 하고 전술한 제1의 합금층 상에 일체적으로 형성된 제2의 금속층으로서 TaN 합금층의 적어도 표면이 산화막화하게 되는 적층형의 배선재료로 형성되어 있는 것을 특징으로 하는 액정표시장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900019728A 1989-11-30 1990-11-30 배선재료와 이를 이용한 전자장치 및 액정표시장치 KR970009491B1 (ko)

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JP??01-313674 1989-11-30
JP01-313674 1989-11-30
JP31367489 1989-11-30
JP??02-047028 1990-02-26
JP02-047028 1990-02-26
JP4702890 1990-02-26

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KR910010223A true KR910010223A (ko) 1991-06-29
KR970009491B1 KR970009491B1 (ko) 1997-06-13

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US (2) US5264728A (ko)
EP (1) EP0430702B1 (ko)
KR (1) KR970009491B1 (ko)
DE (1) DE69032893T2 (ko)

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