KR880002417A - 질화 알루미늄(ain)회로 기판 - Google Patents

질화 알루미늄(ain)회로 기판 Download PDF

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KR880002417A
KR880002417A KR1019870007473A KR870007473A KR880002417A KR 880002417 A KR880002417 A KR 880002417A KR 1019870007473 A KR1019870007473 A KR 1019870007473A KR 870007473 A KR870007473 A KR 870007473A KR 880002417 A KR880002417 A KR 880002417A
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aluminum nitride
circuit board
conductive material
group
molybdenum
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KR900003845B1 (ko
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히데끼 사또오
노부유끼 미즈노야
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아오이 죠이찌
가부시끼가이샤 도시바
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Abstract

내용 없음

Description

질화 알루미늄(AlN)회로 기판
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 질화알루미늄 회로 기판의 구조를 도시하는 횡단면도이다.
제 2 도는 판형 리이드프레임(lead frame)을 이용하는 본 발명의 평면도이다.
* 도면의 주요부분에 대한 부호의 설명
1 : AlN판 2 : Si요소
3 : 금속화된 층 4 : 납땜층
5, 6 : 리이드프레임 8 : 도금층

Claims (11)

  1. 질화알루미늄판의 접착면상에 형성된 금속화된 층(3)을 통해 질화알루미늄판에 접착된 전도물질(5)과 질화알루미늄판(1)으로 구성되는데 있어서, 2×10-6/℃∼6×10-6/℃의 열팽창 계수를 갖는 금속물질로된 전도물질인 것을 특징으로 하는 질화알루미늄 기판.
  2. 제 1 항에 있어서, 열팽창 계수가 4×10-6∼5×10-6/℃ 범위인 것을 특징으로 하는 질화알루미늄 회로 기판.
  3. 제 1 항에 있어서, 전도물질이 판형 리이드프레임 인 것을 특징으로 하는 질화알루미늄 회로 기판.
  4. 제 3 항에 있어서, 질화알루미늄과 리이드프레임과 접착 면적이 4mm2이하인 것을 특징으로 하는 질화알루미늄 회로 기판.
  5. 제 4 항에 있어서, 질화알루미늄과 리이드프레임의 접착면적이 8mm2이하인 것을 특징으로 하는 질화알루미늄 회로 기판.
  6. 제 5 항에 있어서, 질화알루미늄과 리이드프레임의 접착면적이 16mm2이하인 것을 특징으로 하는 질화암루미늄 기판.
  7. 제 1 항에 있어서, 금속화된 층이 몰리브덴과 텅스텐에서 선택되어지는 것을 특징으로 하는 질화알루미늄 기판.
  8. 제 1 항에 있어서, 전도물질이 몰리브덴, 텅스텐, 몰리브덴계 합금, 텅스텐계 합금, 니켈계 합금, 크로움계 합금, 구리계 합금, 구리, 구리와 용접 밀폐용 Fe-Ni-Co 합금의 크래드 금속, Mo-Cu 크래드 금속과 W-Cu 크래드 금속으로 구성되는 그룹에서 선택된 적어도 하나인 것을 특징으로 하는 질화알루미늄 회로 기판.
  9. 제 8 항에 있어서, 전도물질이 몰리브덴인 것을 특징으로 하는 질화알루미늄 기판.
  10. 제 8 항에 있어서, 전도물질이 인바아강 인 것을 특징으로 하는 질화알루미늄 기판.
  11. 제 1 항에 있어서, (i) 몰리브덴, 텅스텐, 탄탈륨으로 구성되는 첫번째 그룹에서 선택된 적어도 하나의 원소와, (ii) 주기율표에 있는 IIa족 원소, IIIa와 IIIb족 원소, IVa족 원소, 희토류 원소, 악티늄족 원소로 구성되는 두번째 그룹에서 선택된 적어도 하나의 원소를 함유하는 전도되는 금속화된 층인 것을 특징으로 하는 질화알루미늄 회로 기판.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870007473A 1986-07-11 1987-07-11 질화 알루미늄(ain)회로 기판 KR900003845B1 (ko)

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JP86-161784 1986-07-11
JP61161784A JPS6318648A (ja) 1986-07-11 1986-07-11 窒化アルミニウム回路基板

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DE3856562T2 (de) * 1987-07-03 2004-08-05 Sumitomo Electric Industries, Ltd. Verbindungsstruktur zwischen Bauelementen für Halbleiterapparat
JP2952303B2 (ja) * 1988-11-15 1999-09-27 旭テクノグラス株式会社 複合型回路装置
DE69033718T2 (de) * 1989-10-09 2001-11-15 Mitsubishi Materials Corp Keramisches Substrat angewendet zum Herstellen einer elektrischen oder elektronischen Schaltung
US5830570A (en) * 1989-12-19 1998-11-03 Kyocera Corporation Aluminum nitride substrate and process for preparation thereof
JP2909856B2 (ja) * 1991-11-14 1999-06-23 日本特殊陶業株式会社 セラミックス基板と金属の接合体
WO1993023246A1 (en) * 1992-05-12 1993-11-25 The Carborundum Company Thin film metallization and brazing of aluminum nitride
US5311399A (en) * 1992-06-24 1994-05-10 The Carborundum Company High power ceramic microelectronic package
JP2642858B2 (ja) * 1993-12-20 1997-08-20 日本碍子株式会社 セラミックスヒーター及び加熱装置
JP2918191B2 (ja) * 1994-04-11 1999-07-12 同和鉱業株式会社 金属−セラミックス複合部材の製造方法
FR2783185B1 (fr) * 1998-09-11 2000-10-13 Commissariat Energie Atomique Assemblage metal-nitrure d'aluminium, avec presence de nitrure de terre(s) rare(s) a l'interface pour assurer le transfert thermique

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DE1914442C3 (de) * 1969-03-21 1978-05-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
JPS5529584B2 (ko) * 1972-10-04 1980-08-05
US4042952A (en) * 1976-06-09 1977-08-16 Motorola, Inc. R. F. power transistor device with controlled common lead inductance
US4246697A (en) * 1978-04-06 1981-01-27 Motorola, Inc. Method of manufacturing RF power semiconductor package
JPS57181356A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Sintered aluminum nitride body with high heat conductivity
JPS5815241A (ja) * 1981-07-20 1983-01-28 Sumitomo Electric Ind Ltd 半導体装置用基板
JPS59153806A (ja) * 1983-02-21 1984-09-01 Toshiba Corp リ−ドフレ−ム
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JPS62197379A (ja) * 1986-02-20 1987-09-01 株式会社東芝 窒化アルミニウム基板

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US4873151A (en) 1989-10-10
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EP0252519A1 (en) 1988-01-13
DE3781731T2 (de) 1993-03-25
JPS6318648A (ja) 1988-01-26
EP0252519B1 (en) 1992-09-16

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