JPS6318648A - 窒化アルミニウム回路基板 - Google Patents

窒化アルミニウム回路基板

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Publication number
JPS6318648A
JPS6318648A JP61161784A JP16178486A JPS6318648A JP S6318648 A JPS6318648 A JP S6318648A JP 61161784 A JP61161784 A JP 61161784A JP 16178486 A JP16178486 A JP 16178486A JP S6318648 A JPS6318648 A JP S6318648A
Authority
JP
Japan
Prior art keywords
substrate
circuit board
thermal expansion
conductor
aluminum nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61161784A
Other languages
English (en)
Inventor
Hideki Sato
英樹 佐藤
Nobuyuki Mizunoya
水野谷　信幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61161784A priority Critical patent/JPS6318648A/ja
Priority to US07/071,132 priority patent/US4873151A/en
Priority to EP87109998A priority patent/EP0252519B1/en
Priority to DE8787109998T priority patent/DE3781731T2/de
Priority to KR1019870007473A priority patent/KR900003845B1/ko
Publication of JPS6318648A publication Critical patent/JPS6318648A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H05K1/02—Details
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    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
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    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
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    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
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    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
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    • Y10S428/901—Printed circuit
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    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component
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    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12819—Group VB metal-base component
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    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
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    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、窒化アルウミニム回路基板に関し、さらに詳
しくは、基板表面に接合された導体、例えば、リードフ
レームと基板との間の熱膨張率の差に起因するクラック
の発生が防止された窒化アルミニウム回路基板に関する
。
（従来の技術） 従来、半導体用回路基板としては、安価なアルミナ（Ａ
ｎ２０ｓ　）の基板上に回路を形成し、ここに半導体装
置をはじめとする各種素子を搭載した形式のものが一般
的であった。
ところが、近年、半導体装置の大出力化に伴って、素子
の発熱量が増大しており、上記のＡｌ２Ｏ３基板では放
熱性の点で必ずしも満足し得ないという問題が生じてい
る。
そのため、Ａｌ２Ｏ３に代えて放熱性に優れた窒化アル
ミニウム（Ａ文Ｎ）で回路基板を構成することが提案さ
れている。しかし、ＡＱＮで構成された回路基板には次
のような新たな問題が生ずる。すなわち、回路基板表面
の所定箇所には、電極を兼ねる、所謂リードフレームが
接合されている。従来のＡｌ２Ｏ３基板にあっては、Ａ
ｌ２Ｏ３基板表面に公知のメタライズ層を形成し、この
メタライズ層を介してリードフレームとなる導体を接合
していた。この場合、リードフレームとなる導体は、Ａ
２゜ｏ３の熱膨張率に等しい値のものか、又はそれに近
い値のものを使用していた。
ところが１．ＭＩＮ基板表面に公知のメタライズ層を形
成し、このメタライズ層を介して従来Ａｌ２Ｏ５に使用
してきたリードフレームを接合されてなるＡ文Ｎ回路基
板にあっては、基板の温度上昇に伴い、リードフレーム
を構成する導体と、Ａ文Ｎとの熱膨張率の差に起因して
接合部に応力が発生し、これによりＡｕＮ基板にクラッ
クが発生する場合がある。
（発明が解決しようとする問題点） このように、従来のＡＪＩＮ回路基板にあっては、基板
表面に接合されたリードフレーム基板との熱膨張率の差
によって、接合部にクラックが発生するという問題があ
った。
本発明は、従来のかかる問題を解消し、リードフレーム
が接合されたＡｕＮ基板において、使用時に接合部のＡ
ｕＮ基板にクラックが生ずることのないＡｉＮ回路基板
の提供を目的とする。
［発明の構成コ （問題点を解決するための手段および作用）本発明者は
、上記目的を達成すべく鋭意研究を重ねた結果、リード
フレームを構成する導体材料として、基板であるＡ文Ｎ
と略同等の熱膨張率を有する金属材料を採用すれば、基
板とリードフレームとの熱膨張率の差に起因するクラッ
クの発生を防止しうるとの着想を得、その効果を確認し
て本発明を完成するに至った。
すなわち、本発明の窒化アルミニウム回路基板は、表面
に導体が接合させてなる窒化アルミニウム回路基板であ
って、該導体が、熱膨張率２×１０−６〜６Ｘ１０−−
６／℃の金属材料よりなり、がっ、該導体が該基板表面
に形成されたメタライズ層を介して該基板に接合されて
いることを特徴とする。
本発明の窒化アルミニウム回路基板は、前述したように
、リードフレームを構成する導体材料に特徴を有するも
のであり、全体の形状などはとくに限定されるものでは
ない。
以下、図面を参照して本発明のＡ又Ｎ回路基板の構成を
説明する０図は一例として本発明をフラットパッケージ
に適用し７２場合の基板の縦断面図であり、図において
、ＡｕＮ基板１の表面の所定箇所には、例えばＳｔより
なる半導体素子２が装着され・ている。このＳｉ半導体
素子２は基板１上にメタライズ層３およびろう材層４を
介して接合されている。この場合メタライズ層３の材料
としては、モリブデン（ＭＯ）、タングステン（Ｗ）な
どを使用することができ、公知のメタライズ法を適用す
ることより形成される。また、ろう材としては銀ろう、
はんだなどの通常のろう材を使用することができる。な
お、ＳｉはＡ文Ｎと略同等の熱膨張率を有するため、と
くに、両者の間に緩衝層を設ける必要がない。
そして、図において基板ｌの周縁部には導体。
すなわち、リードフレーム５および６が上記Ｓｉ素子２
と同様、メタライズ層３およびろう材層４を介して接合
されている。このリードフレーム５および６の構成材料
は、前述したようにＡＵＨの熱膨張率（４、６Ｘ　１０
”６　／’Ｃ）と略同等の熱膨張率を有するものである
ことが必要であり、具体的には、２Ｘ１０＝〜６Ｘ１０
−６／’Ｃ１好ましくは、４Ｘ１０’〜５Ｘ１０−’／
’Ｃ！の熱膨張率を有するものである。更に、この要件
に加えて、熱伝導率が高く（好ましくは５０Ｗ／ｍ−に
以上）、電気抵抗の低いものであることが好ましい。か
かる導体材料の具体例としては、例えば、モリブデン（
Ｍｏ）、タングステン（Ｗ）：アンバー合金、ニッケル
（Ｎｉ）系合金；クロム（Ｃｒ）系合金；りん青銅、ベ
リリウム銅、タフピッチ銅、黄銅などの銅（Ｃｕ）系合
金；その他ＫＯＶ−Ｃｕクラッド材、Ｍ　ｏ　−Ｃｕク
ランド材、Ｗ−Ｃｕクラツド材などをあげることができ
る。
なお１本発明において、ＡｆｌＮ基板としては放熱効果
を充分に発揮せしめるために熱伝導率が５０　Ｗ　／　
ｍ　（ｋ以上のものを使用することが好ましい。
（実施例） 図に示したフラットパンケージ用回路基板を製造した。
すなわち、基板１として熱伝導率１ＯＯＷ／ｍ−にのＡ
　ｎ　Ｎを使用し、この基板１上の所定箇所にＭＯより
なるメタライズ層３を、ついで、該メタライズ層３上に
Ｎｉメッキを施し、このメッキ上に銀−銅よりなる銀ろ
う層４を形成した。しかるのち、Ｓｉペレット素子２お
よびリードフレーム５．６を接合した。このリードフレ
ーム５および６としては、熱膨張率が５　、　Ｉ　Ｘ　
１０−６／’ＣのＭｏを使用した。そして、この回路基
板全体を封着することにより、フラットパッケージを製
造した。
かかるパッケージ１００個について、その動作状態を観
察したところ、リードフレーム５．６真下のＡＩＮ基板
にクラックが発生したものは皆無であった。
なお、比較のために、リードフレーム５．６としてＦｅ
−Ｎｉ−Ｃｏ合金（熱膨張率７．０×１０−６／’Ｃ）
を使用したことを除いては上記実施例と同様にして回路
基板およびフラットパッケージを製造し、同様の評価を
行なったところ。
１００個中８Ｏ個にクラックが発生したことが確認され
た。
［発明の効果］ 以上の説明から明らかなように、本発明の窒化アルミニ
ウム回路基板は放熱性が極めて高いとともに、例えばリ
ードフレームなどの導体が、窒化アルミニウムと略同等
の熱膨張率を有する金属材料で構成されているため、作
動時の素子の発熱により基板の温度が上昇しても、基板
に過度の応力が加わることがなく、クラックが生ずるこ
とはない。したがって、信頼性が向上し、その工業的価
値は極めて大である。
【図面の簡単な説明】
図は本発明の窒化アルミニウム回路基板の構成の一例を
示す縦断面図である。 １・・・・・・Ａ文Ｎ基板、 ３・・・・・・メタライズ層（メッキ層含）、５．６・
・・・・・導体（リードフレーム）、７・・・・・・リ
ード線、 ８・・・・・・メッキ層。

Claims (1)

    【特許請求の範囲】
  1. 　表面に導体が接合されてなる窒化アルミニウム回路基
    板であって、該導体が、熱膨張率２×１０＾−＾６〜６
    ×１０＾−＾６／℃の金属材料よりなり、かつ、該導体
    が該基板表面に形成されたメタライズ層を介して該基板
    に接合されていることを特徴とする窒化アルミニウム回
    路基板。
JP61161784A 1986-07-11 1986-07-11 窒化アルミニウム回路基板 Pending JPS6318648A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61161784A JPS6318648A (ja) 1986-07-11 1986-07-11 窒化アルミニウム回路基板
US07/071,132 US4873151A (en) 1986-07-11 1987-07-08 Aluminum nitride circuit substrate
EP87109998A EP0252519B1 (en) 1986-07-11 1987-07-10 Aluminum nitride circuit substrate
DE8787109998T DE3781731T2 (de) 1986-07-11 1987-07-10 Schaltungssubstrat aus aluminiumnitrid.
KR1019870007473A KR900003845B1 (ko) 1986-07-11 1987-07-11 질화 알루미늄(ain)회로 기판

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61161784A JPS6318648A (ja) 1986-07-11 1986-07-11 窒化アルミニウム回路基板

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP34339096A Division JPH09172108A (ja) 1996-12-24 1996-12-24 窒化アルミニウム回路基板

Publications (1)

Publication Number Publication Date
JPS6318648A true JPS6318648A (ja) 1988-01-26

Family

ID=15741842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61161784A Pending JPS6318648A (ja) 1986-07-11 1986-07-11 窒化アルミニウム回路基板

Country Status (5)

Country Link
US (1) US4873151A (ja)
EP (1) EP0252519B1 (ja)
JP (1) JPS6318648A (ja)
KR (1) KR900003845B1 (ja)
DE (1) DE3781731T2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05139857A (ja) * 1991-11-14 1993-06-08 Ngk Spark Plug Co Ltd セラミツクス基板と金属の接合体

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SG48868A1 (en) * 1987-07-03 1998-05-18 Sumitomo Electric Industries Connection structure between components for semiconductor apparatus
JP2952303B2 (ja) * 1988-11-15 1999-09-27 旭テクノグラス株式会社 複合型回路装置
EP1020914B1 (en) * 1989-10-09 2004-04-28 Mitsubishi Materials Corporation Ceramic substrate used for fabricating electric or electronic circuit
US5830570A (en) * 1989-12-19 1998-11-03 Kyocera Corporation Aluminum nitride substrate and process for preparation thereof
JPH07507973A (ja) * 1992-05-12 1995-09-07 ザ　カーボランダム　カンパニー 窒化アルミニウムの薄膜金属化及びロウ付け
US5311399A (en) * 1992-06-24 1994-05-10 The Carborundum Company High power ceramic microelectronic package
JP2642858B2 (ja) * 1993-12-20 1997-08-20 日本碍子株式会社 セラミックスヒーター及び加熱装置
JP2918191B2 (ja) * 1994-04-11 1999-07-12 同和鉱業株式会社 金属−セラミックス複合部材の製造方法
FR2783185B1 (fr) * 1998-09-11 2000-10-13 Commissariat Energie Atomique Assemblage metal-nitrure d'aluminium, avec presence de nitrure de terre(s) rare(s) a l'interface pour assurer le transfert thermique

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JPS4957372A (ja) * 1972-10-04 1974-06-04
JPS59153806A (ja) * 1983-02-21 1984-09-01 Toshiba Corp リ−ドフレ−ム
JPS60178647A (ja) * 1984-02-27 1985-09-12 Toshiba Corp 半導体装置
JPS6135539A (ja) * 1984-07-27 1986-02-20 Nec Corp 半導体装置

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JPS57181356A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Sintered aluminum nitride body with high heat conductivity
JPS5815241A (ja) * 1981-07-20 1983-01-28 Sumitomo Electric Ind Ltd 半導体装置用基板
DE3789628T3 (de) * 1986-02-20 1998-04-02 Toshiba Kawasaki Kk Gesinterter Körper aus Aluminiumnitrid mit leitender metallisierter Schicht.
JPS62197379A (ja) * 1986-02-20 1987-09-01 株式会社東芝 窒化アルミニウム基板

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JPS60178647A (ja) * 1984-02-27 1985-09-12 Toshiba Corp 半導体装置
JPS6135539A (ja) * 1984-07-27 1986-02-20 Nec Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05139857A (ja) * 1991-11-14 1993-06-08 Ngk Spark Plug Co Ltd セラミツクス基板と金属の接合体

Also Published As

Publication number Publication date
EP0252519B1 (en) 1992-09-16
US4873151A (en) 1989-10-10
KR900003845B1 (ko) 1990-06-02
DE3781731D1 (de) 1992-10-22
DE3781731T2 (de) 1993-03-25
KR880002417A (ko) 1988-04-30
EP0252519A1 (en) 1988-01-13

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