KR960030541A - 탄성 표면파 장치 - Google Patents

탄성 표면파 장치 Download PDF

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Publication number
KR960030541A
KR960030541A KR1019950017605A KR19950017605A KR960030541A KR 960030541 A KR960030541 A KR 960030541A KR 1019950017605 A KR1019950017605 A KR 1019950017605A KR 19950017605 A KR19950017605 A KR 19950017605A KR 960030541 A KR960030541 A KR 960030541A
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KR
South Korea
Prior art keywords
acoustic wave
surface acoustic
substrate
support substrate
wave device
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Application number
KR1019950017605A
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English (en)
Other versions
KR0145232B1 (ko
Inventor
고지 나까시마
히데야 모리시타
Original Assignee
무라따 야스따까
가부시끼가이샤 무라따 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 무라따 야스따까, 가부시끼가이샤 무라따 세이사꾸쇼 filed Critical 무라따 야스따까
Publication of KR960030541A publication Critical patent/KR960030541A/ko
Application granted granted Critical
Publication of KR0145232B1 publication Critical patent/KR0145232B1/ko

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/08—Holders with means for regulating temperature

Abstract

탄성 표면파 장치 11는 지지기판 12상에 페이스 다운(face down) 방식으로 납땜 19, 20에 의해 접합되는 탄성표면과 소자 13와, 그 탄성표면과 소자 13을 둘러싸는 금속캡 21를 포함하고, 탄성파 소자 13과 지지기판 12 및 금속 캡 21의, 표면파 전파방향으로의 열팽창계수를 각각 α1, α2및 α3이라 할 경우, α1＞α2일 때는 α3≥α1로 되고, α1＜α2일 때는 α3≤α1로 된다.

Description

탄성 표면파 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2도는 본 발명의 한 실시예의 SAW 장치를 보여주는 단면도이다, 제 3도는 SAW 소자를 보여주는 평면도이다, 제 4도는 지지기판 상에 SAW 소자를 장착한 구조의 냉각에 따른 변형을 설명하기 위한 단면도이다, 제 5도는 실시예에 있어 냉각에 따라 가해지는 응력을 설명하기 위한 단면도이다.

Claims (5)

  1. 지지기판과, 그 지지기판상에 표면파가 전파되는 면을 하면(下面)으로 하여 납땜된 표면탄성파 소자와, 그 표면탄성파 소자를 둘러 싸게끔 전기한 지지기판에 납땜된 도전성 캡을 포함하고, 그 표면파 소자과 지지기판 및 도전성캡의, 표면파 전파방향으로의 열팽창계수를 각각 α1, α2및 α3라고 했을 때, α1＞α2의 경우에는 α3≥α1, α1＜α2의 경우에는 α3≤α1을 충족하도록 그 표면탄성파 소자과 지지기판 및 도전성 캡이 형성되는 표면탄성파 장치.
  2. 제1항에 있어서, 상기 탄성표면파 소자는 표면기판을 가지고, 그 표면기판의 한쪽 주면상에 적어도 1개의인터디지털 트랜스듀서(interdigital transducer)가 형성되고, 그 인터디지털 트랜스듀서와 전기적으로 연결되도록 단자전극이 형성되며, 그 주면이 전기 탄성표면파 전파 표면을 정의하고 그 인터디지털 트랜스듀서가 그 주면에 형성되어 있는 것을 특징으로 하는 탄성표면파 장치.
  3. 제2항에 있어서, 상기 지지기판상에 형성된 전극 랜드를 추가로 포함하고, 그 전극랜드가 납땜에 의해 상기 표면탄성파 소자의 단자전극과 접합되는 것을 특징으로 하는 탄성 표면파 장치.
  4. 제1항에있어서 상기도전성 캡이 금속캡으로 형성된 것을 특징으로 하는 탄성 표면파 장치.
  5. 제4항에 있어서, 상기 열팽창계수 α1, α2및 α3가 α3＞α|1＞α2의 관계에 있고, 상기 지지기판이 알루미나기판으로 구성되고, 상기 표면탄성파 소자가 결정기판을 사용하여 이루어지며, 상기 금속캡이 철로 이루어진 것을 특징으로 하는 표면탄성파 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950017605A 1995-01-11 1995-06-26 탄성 표면파 장치 KR0145232B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1995-2839 1995-01-11
JP00283995A JP3171043B2 (ja) 1995-01-11 1995-01-11 弾性表面波装置

Publications (2)

Publication Number Publication Date
KR960030541A true KR960030541A (ko) 1996-08-17
KR0145232B1 KR0145232B1 (ko) 1998-08-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950017605A KR0145232B1 (ko) 1995-01-11 1995-06-26 탄성 표면파 장치

Country Status (5)

Country Link
US (1) US5712523A (ko)
EP (1) EP0722218B1 (ko)
JP (1) JP3171043B2 (ko)
KR (1) KR0145232B1 (ko)
DE (1) DE69516106T2 (ko)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5875099A (en) * 1996-05-09 1999-02-23 Murata Manufacturing Co., Ltd. Electronic component
US5955949A (en) * 1997-08-18 1999-09-21 X-Cyte, Inc. Layered structure for a transponder tag
JPH11239037A (ja) * 1998-02-20 1999-08-31 Nec Corp 弾性表面波装置
JP3339450B2 (ja) * 1999-03-02 2002-10-28 株式会社村田製作所 表面波装置の製造方法
US6426583B1 (en) * 1999-06-14 2002-07-30 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave element, method for producing the same and surface acoustic wave device using the same
JP2001267881A (ja) * 2000-03-17 2001-09-28 Fujitsu Media Device Kk 弾性表面波デバイス及びこれを用いた通信装置、並びにアンテナデュプレクサ
JP3376994B2 (ja) * 2000-06-27 2003-02-17 株式会社村田製作所 弾性表面波装置及びその製造方法
US8617934B1 (en) 2000-11-28 2013-12-31 Knowles Electronics, Llc Methods of manufacture of top port multi-part surface mount silicon condenser microphone packages
US7434305B2 (en) 2000-11-28 2008-10-14 Knowles Electronics, Llc. Method of manufacturing a microphone
US7166910B2 (en) * 2000-11-28 2007-01-23 Knowles Electronics Llc Miniature silicon condenser microphone
US7439616B2 (en) * 2000-11-28 2008-10-21 Knowles Electronics, Llc Miniature silicon condenser microphone
US6930364B2 (en) * 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
EP1484948A4 (en) * 2002-01-24 2009-03-18 Mitsubishi Materials Corp PCB, ELECTRONIC PART WITH SCREEN STRUCTURE AND WIRELESS COMMUNICATION DEVICE
AU2003251737A1 (en) * 2002-06-28 2004-01-19 Vectron International Low profile temperature-compensated low-stress crystal mount structure
US7154206B2 (en) * 2002-07-31 2006-12-26 Kyocera Corporation Surface acoustic wave device and method for manufacturing same
US6846423B1 (en) 2002-08-28 2005-01-25 Silicon Light Machines Corporation Wafer-level seal for non-silicon-based devices
US6877209B1 (en) 2002-08-28 2005-04-12 Silicon Light Machines, Inc. Method for sealing an active area of a surface acoustic wave device on a wafer
JP2005167969A (ja) * 2003-11-14 2005-06-23 Fujitsu Media Device Kk 弾性波素子および弾性波素子の製造方法
US7750420B2 (en) * 2004-03-26 2010-07-06 Cypress Semiconductor Corporation Integrated circuit having one or more conductive devices formed over a SAW and/or MEMS device
DE102005008514B4 (de) * 2005-02-24 2019-05-16 Tdk Corporation Mikrofonmembran und Mikrofon mit der Mikrofonmembran
DE102005008512B4 (de) 2005-02-24 2016-06-23 Epcos Ag Elektrisches Modul mit einem MEMS-Mikrofon
DE102005008511B4 (de) * 2005-02-24 2019-09-12 Tdk Corporation MEMS-Mikrofon
SG130158A1 (en) 2005-08-20 2007-03-20 Bse Co Ltd Silicon based condenser microphone and packaging method for the same
DE102005053767B4 (de) * 2005-11-10 2014-10-30 Epcos Ag MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau
DE102005053765B4 (de) * 2005-11-10 2016-04-14 Epcos Ag MEMS-Package und Verfahren zur Herstellung
JP5048471B2 (ja) * 2007-12-05 2012-10-17 セイコーインスツル株式会社 パッケージの製造方法、パッケージ、電子デバイス、圧電振動子、発振器、電子機器及び電波時計
US9374643B2 (en) 2011-11-04 2016-06-21 Knowles Electronics, Llc Embedded dielectric as a barrier in an acoustic device and method of manufacture
US9078063B2 (en) 2012-08-10 2015-07-07 Knowles Electronics, Llc Microphone assembly with barrier to prevent contaminant infiltration
DE102013106353B4 (de) * 2013-06-18 2018-06-28 Tdk Corporation Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement
JP2014033467A (ja) * 2013-10-31 2014-02-20 Murata Mfg Co Ltd 弾性表面波素子
CN104780490A (zh) * 2015-04-20 2015-07-15 歌尔声学股份有限公司 一种mems麦克风的封装结构及其制造方法
US9794661B2 (en) 2015-08-07 2017-10-17 Knowles Electronics, Llc Ingress protection for reducing particle infiltration into acoustic chamber of a MEMS microphone package

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3786373A (en) * 1971-10-01 1974-01-15 Raytheon Co Temperature compensated acoustic surface wave device
JPS5213716B2 (ko) * 1971-12-22 1977-04-16
GB1392518A (en) * 1972-08-25 1975-04-30 Plessey Co Ltd Temperature compensated resonator
CA1035461A (en) * 1974-05-16 1978-07-25 Andrew H. Bobeck Magnetic bubble, field-access assembly
GB2064126A (en) * 1979-11-22 1981-06-10 Philips Electronic Associated Method of making humidity sensors
US4454442A (en) * 1983-07-15 1984-06-12 General Dynamics Electronics Division Piezoelectric relay using Euler lever
US4845397A (en) * 1984-12-19 1989-07-04 Tektronix, Inc. Constraining mount system for surface acoustic wave devices
US5030875A (en) * 1990-01-26 1991-07-09 Motorola, Inc. Sacrificial quartz crystal mount
JP2673993B2 (ja) * 1990-07-02 1997-11-05 日本無線株式会社 表面弾性波装置
JPH04170811A (ja) * 1990-11-05 1992-06-18 Fujitsu Ltd 弾性表面波デバイス
US5208504A (en) * 1990-12-28 1993-05-04 Raytheon Company Saw device and method of manufacture
NO173412C (no) * 1991-06-28 1993-12-08 Ame Space As Montasjeanordning
US5237235A (en) * 1991-09-30 1993-08-17 Motorola, Inc. Surface acoustic wave device package
US5453652A (en) * 1992-12-17 1995-09-26 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device with interdigital transducers formed on a holding substrate thereof and a method of producing the same
DE69413280T2 (de) * 1993-03-15 1999-04-22 Matsushita Electric Ind Co Ltd Akustische Oberflächenwellenanordnung mit laminierter Struktur
US5459368A (en) * 1993-08-06 1995-10-17 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device mounted module

Also Published As

Publication number Publication date
US5712523A (en) 1998-01-27
EP0722218B1 (en) 2000-04-05
JP3171043B2 (ja) 2001-05-28
JPH08191228A (ja) 1996-07-23
EP0722218A1 (en) 1996-07-17
KR0145232B1 (ko) 1998-08-17
DE69516106D1 (de) 2000-05-11
DE69516106T2 (de) 2000-12-14

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