KR970024043A - 금속성 전자 부품 패키지 장치(metallic electronic component package device) - Google Patents
금속성 전자 부품 패키지 장치(metallic electronic component package device) Download PDFInfo
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- KR970024043A KR970024043A KR1019960050001A KR19960050001A KR970024043A KR 970024043 A KR970024043 A KR 970024043A KR 1019960050001 A KR1019960050001 A KR 1019960050001A KR 19960050001 A KR19960050001 A KR 19960050001A KR 970024043 A KR970024043 A KR 970024043A
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- electronic component
- metal base
- adhesive
- component package
- semiconductor chip
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- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/49105—Connecting at different heights
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
간단한 구조를 갖고, 방열성이 높으며, 반도체 칩에 열반응력에 의한 영향이 생기지 않는 반도체 패키지 등의 금속성 전자 부품 패키지 장치를 제공한다.
탄성의 고열 전도성 수지 접착제를 이용하는 것으로, 반도체 칩과 열팽창 계수가 크게 상이한 Al 등의 금속 베이스위에도 직접 반도체 칩을 탑재할 수 있도록 함에 따라, 금속 베이스까지의 열저항이 작게 되며, 방열성이 향상함과 동시에 열팽창 계수의 차로부터 생기는 열반응력에 의해 반도체 칩의 나쁜 영향을 회피할 수 있으므로, 그 신뢰성이 향상한다. 게다가 구조가 간단하므로, 제조 비용이 저렴화된다. 또한, 반도체 칩이 그 접착면에 접지용 전극을 제공하는 경우에는, 도전성(=고열 전도성)의 접착제를 사용하고, 직접 접지할 수 있으며, 배선의 간소화, 소형화 및 노이즈의 감소를 도모할 수 있다. 또, 금속 베이스에 수지 기판의 스루 홀 등에 전기적 접속이 가능한 돌기를 소성 변형에 의해 제공됨에 따라, 보다 더 수지 기판의 배선 패턴의 간소화, 소형화 및 노이즈의 감소를 도모할 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도 1 은 본 발명이 적용된 제 1 실시예에서 금속 볼 그리드 어레이의 평면도,
도 2 는 도 1 의 II-II 선에서 확대해서 본 단면도,
도 3 은 도 1 의 금속 베이스에서 본 평면도,
도 4 는 본 발명이 적용된 제 2 실시예에서 금속 볼 그리드 어레이의 측단면도.
Claims (12)
- 금속 또는 합금으로 이루어진 금속 베이스와 접착제층을 개재시켜 상기 금속 베이스에 고착된 전자 부품 칩과 상기 잔자 부품 칩에 인접해서 상기 금속 베이스에 고착된 배선 기판과 상기 전자 부품 칩위에 제공된 패드와 상기 배선 기판에 제공된 패드를 접속하는 본딩 와이어와 상기 금속 베이스와 상기 전자 부품 칩과의 사이에 개재된 상기 접착제층이 상기 금속 베이스에 의한 열왜곡에 의해 상기 전자 부품 칩에 나쁜 영향을 주지 않도록 탄성 및 고열 전도성을 갖는 것을 특징으로 하는 금속성 전자 부품 패키지 장치.
- 제 1 항에 있어서, 상기 금속 베이스는 알루미늄으로 이루어진 것을 특징으로 하는 금속성 전자 부품 패키지 장치.
- 제 1 항 또는 제 2 항에 있어서, 상기 접착제의 영의 계수(Young's modulus)가 1000 kgf/cm2이하이고, 연장율이 30% 이상이며, 접착력이 10 kgf/cm2이상으로 되어 있는 것을 특징으로 하는 금속성 전자 부품 패키지 장치.
- 제 1 항 내지 제 3 항중 어느 한 항에 있어서, 상기 접착제의 열전도율이 1.0W/m·k 이상으로 되어 있는 것을 특징으로 하는 금속성 전자 부품 패키지 장치.
- 제 1 항 내지 제 4 항중 어느 한 항에 있어서, 상기 접착제는 금속 필터가 충진된 실리콘 수지계 접착제로 이루어진 것을 특징으로 하는 금속성 전자 부품 패키지 장치.
- 제 5 항에 있어서, 상기 금속 필터는 은 필터로 이루어진 것을 특징으로 하는 금속성 전자 부품 패키지 장치.
- 제 1 항 내지 제 6 항중 어느 한 항에 있어서, 상기 접착제는 도전성이고, 접지용의 도전로를 제공하는 것을 특징으로 하는 금속성 전자 부품 패키지 장치.
- 제 1 항 내지 제 7 항중 어느 한 항에 있어서, 상기 금속 베이스에 돌기가 제공되고, 상기 기판에 핵 기판을 상기 금속 베이스위에 탑재하는 경우, 상기 돌기를 수용해아 하는 스루 홀(a through hole)이 형성되어 있는 것을 특징으로 하는 금속성 전자 부품 패키지 장치.
- 제 8 항에 있어서, 상기 돌기는 상기 기판을 상기 금속 베이스위에서 위치결정하도록 적합하게 되어 있는 것을 특징으로 하는 금속성 전자 부품 패키지 장치.
- 제 8 항 또는 제 9 항에 있어서, 상기 돌기는 상기 기판의 패드를 상기 금속 베이스에 접속하는 도전료를 제공하는 것을 특징으로 하는 금속성 전자 부품 패키지 장치.
- 제 8 항 내지 제 10 항중 어느 한 항에 있어서, 상기 돌기는 상기 금속 베이스를 소성 형성시킴으로써 이것과 일체적으로 제공되는 것을 특징으로 하는 금속성 전자 부품 패키지 장치.
- 제 1 항 내지 제 11 항중 어느 한 항에 있어서, 상기 전자 부품 칩은 반도체 칩으로 이루어진 것을 하는 특징으로 하는 금속성 전자 부품 패키지 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30672095 | 1995-10-31 | ||
JP95-306720 | 1995-10-31 | ||
JP96-79435 | 1996-03-06 | ||
JP8079435A JPH09186266A (ja) | 1995-10-31 | 1996-03-06 | 半導体パッケージ |
JP8238612A JPH1064928A (ja) | 1996-08-21 | 1996-08-21 | メタルベースを用いた半導体装置 |
JP96-238612 | 1996-08-21 |
Publications (2)
Publication Number | Publication Date |
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KR970024043A true KR970024043A (ko) | 1997-05-30 |
KR100271836B1 KR100271836B1 (ko) | 2000-11-15 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019960050001A KR100271836B1 (ko) | 1995-10-31 | 1996-10-30 | 금속성 전자 부품 패키지 장치 |
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US (1) | US5877553A (ko) |
KR (1) | KR100271836B1 (ko) |
TW (1) | TW363262B (ko) |
Families Citing this family (9)
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US6249053B1 (en) * | 1998-02-16 | 2001-06-19 | Sumitomo Metal (Smi) Electronics Devices Inc. | Chip package and method for manufacturing the same |
US6495394B1 (en) | 1999-02-16 | 2002-12-17 | Sumitomo Metal (Smi) Electronics Devices Inc. | Chip package and method for manufacturing the same |
US6153829A (en) * | 1998-09-15 | 2000-11-28 | Intel Corporation | Split cavity wall plating for an integrated circuit package |
US7020958B1 (en) * | 1998-09-15 | 2006-04-04 | Intel Corporation | Methods forming an integrated circuit package with a split cavity wall |
US6897123B2 (en) * | 2001-03-05 | 2005-05-24 | Agityne Corporation | Bonding of parts with dissimilar thermal expansion coefficients |
US6696763B2 (en) * | 2001-04-02 | 2004-02-24 | Via Technologies, Inc. | Solder ball allocation on a chip and method of the same |
JP2003139593A (ja) * | 2001-11-07 | 2003-05-14 | Hitachi Ltd | 車載電子機器および熱式流量計 |
TWM351450U (en) * | 2008-07-24 | 2009-02-21 | Yi-Min Lin | Integrated circuit having porous ceramic heat dissipation plate |
WO2017200011A1 (ja) * | 2016-05-20 | 2017-11-23 | 京セラ株式会社 | 電子素子実装用基板および電子装置 |
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US4314270A (en) * | 1977-12-02 | 1982-02-02 | Mitsubishi Denki Kabushiki Kaisha | Hybrid thick film integrated circuit heat dissipating and grounding assembly |
US4381469A (en) * | 1979-07-20 | 1983-04-26 | Murata Manufacturing Company, Ltd. | Temperature stable piezoelectric device |
JPS58223678A (ja) * | 1982-06-16 | 1983-12-26 | 株式会社日立製作所 | 金属化層を有するSiC焼結体とその製法 |
US4577056A (en) * | 1984-04-09 | 1986-03-18 | Olin Corporation | Hermetically sealed metal package |
US5023398A (en) * | 1988-10-05 | 1991-06-11 | Olin Corporation | Aluminum alloy semiconductor packages |
US5317194A (en) * | 1989-10-17 | 1994-05-31 | Kabushiki Kaisha Toshiba | Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink |
JP2938634B2 (ja) * | 1991-10-08 | 1999-08-23 | キヤノン株式会社 | 太陽電池モジュール |
US5367196A (en) * | 1992-09-17 | 1994-11-22 | Olin Corporation | Molded plastic semiconductor package including an aluminum alloy heat spreader |
JP3253154B2 (ja) * | 1993-01-06 | 2002-02-04 | 新光電気工業株式会社 | 半導体装置用パッケージ及び半導体装置 |
JP2974552B2 (ja) * | 1993-06-14 | 1999-11-10 | 株式会社東芝 | 半導体装置 |
US5641997A (en) * | 1993-09-14 | 1997-06-24 | Kabushiki Kaisha Toshiba | Plastic-encapsulated semiconductor device |
-
1996
- 1996-10-29 TW TW085113187A patent/TW363262B/zh active
- 1996-10-30 KR KR1019960050001A patent/KR100271836B1/ko not_active IP Right Cessation
- 1996-10-31 US US08/739,662 patent/US5877553A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100271836B1 (ko) | 2000-11-15 |
TW363262B (en) | 1999-07-01 |
US5877553A (en) | 1999-03-02 |
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