KR910007160A - 전력용 반도체장치 - Google Patents

전력용 반도체장치 Download PDF

Info

Publication number
KR910007160A
KR910007160A KR1019900014300A KR900014300A KR910007160A KR 910007160 A KR910007160 A KR 910007160A KR 1019900014300 A KR1019900014300 A KR 1019900014300A KR 900014300 A KR900014300 A KR 900014300A KR 910007160 A KR910007160 A KR 910007160A
Authority
KR
South Korea
Prior art keywords
region
semiconductor device
power semiconductor
surface exposed
area
Prior art date
Application number
KR1019900014300A
Other languages
English (en)
Other versions
KR940008261B1 (ko
Inventor
마코토 히데시마
데츠지로 츠노다
마사시 구와하라
신고 야나지다
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910007160A publication Critical patent/KR910007160A/ko
Application granted granted Critical
Publication of KR940008261B1 publication Critical patent/KR940008261B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

전력용 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1의 실시예에 관계되는 전력용 반도체장치(IGBT)의 단면도.
제2도는 실시예에 관계되는 장치의 최대 가능 제어전류와 [n형 영역 깊이/p형 베이스영역 깊이]의 관계를 나타낸 도면.

Claims (6)

  1. 제1도전형 반도체층으로 이루어진 제1영역(101)과, 이것에 연속하여 형성된 적어도 1개의 제2도전형 반도체층으로 이루어진 제2영역(103,1001)과, 제2영역이 노출하는 표면에 단부를 노출하여 형성되는 제1도전형 반도체층으로 이루어진 제3영역(104), 이 제3영역내에 설치된 단부가 상기 표면에 노출하는 제2도전형 반도체층으로 이루어진 제4영역(105), 상기 제2영역과 제4영역간의 제3영역이 상기 표면에 따라서 형성되는 절연물층(106) 이 절연물층 위에 형성되는 게이트층(107)을 가지는 전력용 반도체장치에 있어서, 상기 제2영역의 캐리어 라이프 타임이 방사선 조사에 따라서 5 ×10-7초 이하로 설정되어 있고, 상기 게이트층 아래쪽의 절연물층에 접하는 제2영역중의 상기 제3영역에 접하여 형성되는 부분의 제2도전형 불순물 농도가 그 제2영역보다도 높은 제5영역(1001)을 구비하고 있는 것을 특징으로 하는 전력용 반도체장치.
  2. 제1항에 있어서, 상기 제3영역이 복수로 존재하고 각각의 제3영역의 표면 노출부는 제5영역으로 둘러싸인 것을 특징으로 하는 전력용 반도체장치.
  3. 제1항에 있어서, 상기 제5영역이 복수로 존재하고 각각의 제5영역의 표면 노출부는 제3영역으로 둘러싸이는 것을 특징으로 하는 전력용 반도체장치.
  4. 제1항에 있어서, 상기 제5영역의 깊이는 제3영역의 깊이의 0.5배에서 1.1배까지의 사이에 있는 것을 특징으로 하는 전력용 반도체장치.
  5. 제1항에 있어서, 상기 제5영역의 표면 노출부의 평면 기하학 형상은 둔각을 가진 다각형 혹은 그 표면 노출부의 각부에 소정의 곡률을 가지고 있는 것을 특징으로 하는 전력용 반도체장치.
  6. 제1항에 있어서, 상기 방사선은 전자선 혹은 중성자선인 것을 특징으로 하는 전력용 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900014300A 1989-09-11 1990-09-11 전력용 반도체장치 KR940008261B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1234955A JP2752184B2 (ja) 1989-09-11 1989-09-11 電力用半導体装置
JP1-234955 1989-09-11

Publications (2)

Publication Number Publication Date
KR910007160A true KR910007160A (ko) 1991-04-30
KR940008261B1 KR940008261B1 (ko) 1994-09-09

Family

ID=16978878

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900014300A KR940008261B1 (ko) 1989-09-11 1990-09-11 전력용 반도체장치

Country Status (5)

Country Link
US (1) US5124772A (ko)
EP (1) EP0417738B1 (ko)
JP (1) JP2752184B2 (ko)
KR (1) KR940008261B1 (ko)
DE (1) DE69032496T2 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020053713A (ko) * 2000-12-27 2002-07-05 니시무로 타이죠 반도체장치
KR100816409B1 (ko) * 2006-07-07 2008-03-25 미쓰비시덴키 가부시키가이샤 반도체장치

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528058A (en) * 1986-03-21 1996-06-18 Advanced Power Technology, Inc. IGBT device with platinum lifetime control and reduced gaw
JPH04322470A (ja) * 1991-04-23 1992-11-12 Fuji Electric Co Ltd 絶縁ゲートバイポーラトランジスタ
US5357120A (en) * 1992-07-14 1994-10-18 Hitachi Ltd. Compound semiconductor device and electric power converting apparatus using such device
US5426314A (en) * 1992-07-29 1995-06-20 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated gate control static induction thyristor
JPH06112494A (ja) * 1992-09-29 1994-04-22 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JPH06268227A (ja) * 1993-03-10 1994-09-22 Hitachi Ltd 絶縁ゲート型バイポーラトランジスタ
US5466951A (en) * 1993-12-08 1995-11-14 Siemens Aktiengesellschaft Controllable power semiconductor element with buffer zone and method for the manufacture thereof
US6008092A (en) * 1996-02-12 1999-12-28 International Rectifier Corporation Short channel IGBT with improved forward voltage drop and improved switching power loss
JP3209091B2 (ja) * 1996-05-30 2001-09-17 富士電機株式会社 絶縁ゲートバイポーラトランジスタを備えた半導体装置
WO1999007020A1 (de) * 1997-07-30 1999-02-11 Siemens Aktiengesellschaft Gate-gesteuerter thyristor
EP0913872A1 (en) * 1997-10-29 1999-05-06 Motorola Semiconducteurs S.A. Insulated gate bipolar transistor
JP4164962B2 (ja) * 1999-10-08 2008-10-15 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ
DE10009347C2 (de) * 2000-02-28 2003-11-13 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements
JP3490959B2 (ja) * 2000-07-11 2004-01-26 三洋電機株式会社 受光素子及び受光モジュール
JP2003069019A (ja) * 2001-08-29 2003-03-07 Toshiba Corp 半導体装置およびその製造方法
US6888177B1 (en) * 2002-09-24 2005-05-03 T-Ram, Inc. Increased base-emitter capacitance
JP2006173437A (ja) * 2004-12-17 2006-06-29 Toshiba Corp 半導体装置
US20080157117A1 (en) * 2006-12-28 2008-07-03 Mcnutt Ty R Insulated gate bipolar transistor with enhanced conductivity modulation
US8835987B2 (en) * 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
JP5435189B2 (ja) * 2007-10-18 2014-03-05 文彦 廣瀬 電子スイッチ
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8482029B2 (en) * 2011-05-27 2013-07-09 Infineon Technologies Austria Ag Semiconductor device and integrated circuit including the semiconductor device
US9911838B2 (en) * 2012-10-26 2018-03-06 Ixys Corporation IGBT die structure with auxiliary P well terminal
US9343459B2 (en) 2014-04-04 2016-05-17 Texas Instruments Incorporated Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect
JP6453120B2 (ja) * 2015-03-18 2019-01-16 株式会社日立製作所 変圧器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE8107136L (sv) * 1980-12-02 1982-06-03 Gen Electric Styrelektrodforsedd likriktaranordning
EP0077337A1 (en) * 1981-02-23 1983-04-27 Motorola, Inc. Mos power transistor
JPS5868979A (ja) * 1981-10-21 1983-04-25 Hitachi Ltd 半導体装置
JPS59149058A (ja) * 1983-02-15 1984-08-25 Matsushita Electric Works Ltd Ｍｏｓ型トランジスタ
JP2585505B2 (ja) * 1984-09-29 1997-02-26 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JPS6164165A (ja) * 1984-09-05 1986-04-02 Matsushita Electric Ind Co Ltd Ｍｏｓ型電界効果トランジスタ
EP0222326A2 (en) * 1985-11-12 1987-05-20 General Electric Company Method of fabricating an improved insulated gate semiconductor device
JPS62232167A (ja) * 1986-04-02 1987-10-12 Nissan Motor Co Ltd 半導体装置
JPS63127571A (ja) * 1986-11-17 1988-05-31 Nissan Motor Co Ltd 電導度変調形ｍｏｓｆｅｔ
JPS6449273A (en) * 1987-08-19 1989-02-23 Mitsubishi Electric Corp Semiconductor device and its manufacture
US5017508A (en) * 1989-06-29 1991-05-21 Ixys Corporation Method of annealing fully-fabricated, radiation damaged semiconductor devices
US4925812A (en) * 1989-09-21 1990-05-15 International Rectifier Corporation Platinum diffusion process

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020053713A (ko) * 2000-12-27 2002-07-05 니시무로 타이죠 반도체장치
KR100816409B1 (ko) * 2006-07-07 2008-03-25 미쓰비시덴키 가부시키가이샤 반도체장치
US8008746B2 (en) 2006-07-07 2011-08-30 Mitsubishi Electric Corporation Semiconductor device

Also Published As

Publication number Publication date
EP0417738B1 (en) 1998-07-22
US5124772A (en) 1992-06-23
DE69032496D1 (de) 1998-08-27
JP2752184B2 (ja) 1998-05-18
KR940008261B1 (ko) 1994-09-09
EP0417738A1 (en) 1991-03-20
DE69032496T2 (de) 1999-01-07
JPH0397268A (ja) 1991-04-23

Similar Documents

Publication Publication Date Title
KR910007160A (ko) 전력용 반도체장치
KR970067933A (ko) 절연 게이트형 반도체 장치 및 그 제조방법
EP1237201A3 (en) Insulated gate semiconductor device and method of manufacturing the same
KR910015073A (ko) 고전압 반도체 구조체 및 그 제조방법
KR910010735A (ko) 반도체 장치
KR880005693A (ko) Mosfet 구조물 및 이의 제조 방법
US6351024B1 (en) Power semiconductor diode
ES8605126A1 (es) Perfeccionamientos en los sistemas supresores de sobretensiones y metodo de fabricacion correspondiente
KR930005259A (ko) 반도체 장치 및 그 제조 방법
KR950021736A (ko) 전압구동형 사이리스터와 그 제조방법
KR900005623A (ko) 제어 가능 파워 반도체 소자
SE8007199L (sv) Zener-diod
KR890013793A (ko) 고전력 gto 싸이리스터 및 그 제조방법
US4355320A (en) Light-controlled transistor
KR910008861A (ko) 집적회로소자
KR910010732A (ko) 반도체 디바이스 및 그 제조방법
KR900008704A (ko) 반도체 장치
KR890005882A (ko) 수직 반도체 소자
JPS57181160A (en) Transistor
KR860008625A (ko) 절연게이트 반도체 장치
JPS6152592B2 (ko)
KR940022888A (ko) 반도체장치
ATE211306T1 (de) Laterale bipolare transistoranordnungen mit isolierter steuerelektrode mit geteilter anode
KR920015453A (ko) 스위칭 반도체장치의 제조방법
EP0043099A2 (en) Light-activated semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100831

Year of fee payment: 17

EXPY Expiration of term