KR910010735A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR910010735A
KR910010735A KR1019900019497A KR900019497A KR910010735A KR 910010735 A KR910010735 A KR 910010735A KR 1019900019497 A KR1019900019497 A KR 1019900019497A KR 900019497 A KR900019497 A KR 900019497A KR 910010735 A KR910010735 A KR 910010735A
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KR
South Korea
Prior art keywords
layer
semiconductor device
semiconductor layer
electrode
semiconductor
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Application number
KR1019900019497A
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English (en)
Inventor
데쯔지로 쯔노다
Original Assignee
아오이 죠이치
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR910010735A publication Critical patent/KR910010735A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Thyristors (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 관련되는 반도체 장치 (n채널형IGBJ)의 개념을 도시한 단면도.
제5도는 제2실시예에 관련된 반도체장치(GTO 사이리스터)의 개념을 도시한 단면도.
제7도는 제3실시예에 관련된 반도체 장치(에노드 쇼트형 IGBT)의 개념을 도시한 단면도.

Claims (4)

  1. 제1전극(109,208,310)과 제2전극(108,206,309)사이에 3개의 P-N접합을 형성하도록 서로 역도전형층과 접속되어 형성되는 제1반도체층 내지 제4반도체층을 갖고 있는 반도체장치에 있어서, 상기 제1전극(109,208,310)에 접속되는 제1도전형의 제1반도체층(102,201,301)과 함께 제1의 P-N접합을 형성하는 제2도전형의 제2반도체층(102,103,202,203,302,303)내에 상기 제1의 P-N접합 근처에 재결합 중심의 수의 피크를 갖고 있는 저 캐리어 수명층(102,110,202,210,302,311)을 포함하는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 제1반도체층이 상기 제1전극측에 형성되는 고불순물 영역(102,202,302)를 갖고, 상기 저 캐리어 수명층이 상기 고불순물 영역내에 형성되어 있는 것을 특징으로 하는 반도체 장치.
  3. 제2항에 있어서, 상기 재결합 중심의 수가 피크가 상기 고불순물 영역을 깊이 방향으로 2분할하는 선보다 상기 제1반도체층측으로 근접해 있는 것을 특징으로 하는 반도체 장치.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 저 캐리어 수명층이 고에너지입자를 조사함으로써 형성되고, 상기 고에너지 입작 프로튼,입자, 중수소, 수소 분자 이온들 중 어떤 것인 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900019497A 1989-11-30 1990-11-29 반도체 장치 KR910010735A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01-311333 1989-11-30
JP1311333A JPH03171777A (ja) 1989-11-30 1989-11-30 半導体装置

Publications (1)

Publication Number Publication Date
KR910010735A true KR910010735A (ko) 1991-06-29

Family

ID=18015880

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900019497A KR910010735A (ko) 1989-11-30 1990-11-29 반도체 장치

Country Status (3)

Country Link
EP (1) EP0430237A1 (ko)
JP (1) JPH03171777A (ko)
KR (1) KR910010735A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020053713A (ko) * 2000-12-27 2002-07-05 니시무로 타이죠 반도체장치

Families Citing this family (26)

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JPH04280475A (ja) * 1991-03-08 1992-10-06 Fuji Electric Co Ltd 半導体スイッチング装置
JPH0548111A (ja) * 1991-08-12 1993-02-26 Toshiba Corp 半導体装置およびその製造方法
JPH08125200A (ja) * 1994-10-25 1996-05-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH09172167A (ja) * 1995-12-19 1997-06-30 Toshiba Corp 半導体装置
SE9603738D0 (sv) * 1996-10-14 1996-10-14 Abb Research Ltd A method for producing a bipolar semiconductor device and a bipolar semiconductor device
EP1895595B8 (en) * 1996-10-18 2013-11-06 Hitachi, Ltd. Semiconductor device and electric power conversion apparatus therewith
DE19726126A1 (de) * 1997-06-20 1998-12-24 Telefunken Microelectron Bipolarer Schalttransistor mit verringerter Sättigung
KR20010034362A (ko) * 1998-11-26 2001-04-25 다니구찌 이찌로오 반도체 장치 및 그 제조방법
DE10003703B4 (de) * 2000-01-28 2007-07-12 Infineon Technologies Ag Steuerbares, auf einem Isolationsmaterial gebildetes Halbleiterschaltelement
US6482681B1 (en) * 2000-05-05 2002-11-19 International Rectifier Corporation Hydrogen implant for buffer zone of punch-through non epi IGBT
JP3906076B2 (ja) * 2001-01-31 2007-04-18 株式会社東芝 半導体装置
JP4791704B2 (ja) * 2004-04-28 2011-10-12 三菱電機株式会社 逆導通型半導体素子とその製造方法
US7534666B2 (en) * 2005-07-27 2009-05-19 International Rectifier Corporation High voltage non punch through IGBT for switch mode power supplies
DE102005037573B4 (de) * 2005-08-09 2007-05-31 Infineon Technologies Ag Thyristor mit Freiwerdeschutz in Form eines Thyristorsystems und Verfahren zur Herstellung des Thyristorsystems
JP2007103770A (ja) * 2005-10-06 2007-04-19 Sanken Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JP5435189B2 (ja) * 2007-10-18 2014-03-05 文彦 廣瀬 電子スイッチ
DE112008004278B3 (de) 2008-03-31 2021-08-12 Mitsubishi Electric Corp. Halbleitervorrichtung
JP2010092056A (ja) * 2009-10-14 2010-04-22 Hitachi Ltd Ｐｄｐ表示装置
DE102009051828B4 (de) 2009-11-04 2014-05-22 Infineon Technologies Ag Halbleiterbauelement mit Rekombinationszone und Graben sowie Verfahren zu dessen Herstellung
JPWO2012056536A1 (ja) 2010-10-27 2014-03-20 富士電機株式会社 半導体装置および半導体装置の製造方法
US20140077253A1 (en) * 2011-06-08 2014-03-20 Toyota Jidosha Kabushiki Kaisha Semiconductor device and method of manufacturing the same
JP5751106B2 (ja) * 2011-09-20 2015-07-22 株式会社デンソー 半導体装置の製造方法
DE102013009985B4 (de) 2013-06-14 2019-06-13 X-Fab Semiconductor Foundries Ag IGBT-Leistungstransistor, herstellbar in einer grabenisolierten SOI-Technologie und Verfahren zu seiner Herstellung
CN104425245B (zh) * 2013-08-23 2017-11-07 无锡华润上华科技有限公司 反向导通绝缘栅双极型晶体管制造方法
US9252292B2 (en) * 2013-09-16 2016-02-02 Infineon Technologies Ag Semiconductor device and a method for forming a semiconductor device
JP7052322B2 (ja) * 2017-11-28 2022-04-12 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

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DE3339393C2 (de) * 1983-10-29 1986-12-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung einer unterhalb einer äußeren hochdotierten Zone liegenden s-n-Zonenfolge einer Halbleiterstruktur aus Silicium
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JPS649658A (en) * 1987-07-01 1989-01-12 Mitsubishi Electric Corp Gto thyristor
JPH0722198B2 (ja) * 1987-07-15 1995-03-08 富士電機株式会社 絶縁ゲ−ト形バイポ−ラトランジスタ
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JPH07107935B2 (ja) * 1988-02-04 1995-11-15 株式会社東芝 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020053713A (ko) * 2000-12-27 2002-07-05 니시무로 타이죠 반도체장치

Also Published As

Publication number Publication date
EP0430237A1 (en) 1991-06-05
JPH03171777A (ja) 1991-07-25

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