KR880700467A - 반도체 장치 - Google Patents

반도체 장치

Info

Publication number
KR880700467A
KR880700467A KR870700469A KR870700469A KR880700467A KR 880700467 A KR880700467 A KR 880700467A KR 870700469 A KR870700469 A KR 870700469A KR 870700469 A KR870700469 A KR 870700469A KR 880700467 A KR880700467 A KR 880700467A
Authority
KR
South Korea
Prior art keywords
collector
resistance component
schottky barrier
barrier diode
semiconductor device
Prior art date
Application number
KR870700469A
Other languages
English (en)
Other versions
KR920003011B1 (ko
Inventor
도시다까 후꾸시마
Original Assignee
야마모도 다꾸마
후지쓰가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마모도 다꾸마, 후지쓰가부시끼가이샤 filed Critical 야마모도 다꾸마
Publication of KR880700467A publication Critical patent/KR880700467A/ko
Application granted granted Critical
Publication of KR920003011B1 publication Critical patent/KR920003011B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electronic Switches (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 종래의 TTL회로의 일예도.

Claims (3)

  1. 쇼트키 배리어 다이오드 클램핑 트랜지스터를 이용하여 논리회로를 구성하는 반도체장치에 있어서, 콜렉터 전위를 클램핑 하기 위해 콜렉터와 베이스간에 제공되는 클램핑 회로를 쇼트키 배리어 다이오드와 상기 쇼트키 배리어 다이오드에 직렬연결되는 저항성분으로 구성하며, 또한 콜렉터 저항성분을 상기 직렬 저항성분에 의해 저항분할시키는 것이 특징인 반도체 장치.
  2. 제 1 항에서, 콜렉터 출력단자측의 상기 콜렉터 저항성분은 에미터측의 콜렉터 저항성분과 매립층 저항성분의 합에 비해 작아지는 식으로 상기 저항분할이 수행되는 것이 특징인 반도체 장치.
  3. 제 1 항에서, 상기 쇼트키 배리어 다이오드의 전극을 형성하는 창은 콜렉터 전극을 형성하는 창의 외부 근처에 제공되는 구조인 것이 특징인 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870700469A 1985-10-03 1986-10-03 반도체 장치 KR920003011B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60219171A JPS6281120A (ja) 1985-10-03 1985-10-03 半導体装置
JP219171 1985-10-03
PCT/JP1986/000505 WO1987002182A1 (en) 1985-10-03 1986-10-03 Semiconductor device

Publications (2)

Publication Number Publication Date
KR880700467A true KR880700467A (ko) 1988-03-15
KR920003011B1 KR920003011B1 (ko) 1992-04-13

Family

ID=16731311

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870700469A KR920003011B1 (ko) 1985-10-03 1986-10-03 반도체 장치

Country Status (6)

Country Link
US (1) US4943742A (ko)
EP (1) EP0238671B1 (ko)
JP (1) JPS6281120A (ko)
KR (1) KR920003011B1 (ko)
DE (1) DE3683037D1 (ko)
WO (1) WO1987002182A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4988898A (en) * 1989-05-15 1991-01-29 National Semiconductor Corporation High speed ECL/CML to TTL translator circuit
US5150177A (en) * 1991-12-06 1992-09-22 National Semiconductor Corporation Schottky diode structure with localized diode well
DE69316134T2 (de) * 1992-09-22 1998-06-18 Nat Semiconductor Corp Verfahren zur Herstellung eines Schottky-Transistors mit retrogradierter n-Wannenkathode
JPH0679709U (ja) * 1993-04-21 1994-11-08 富栄 佐橋 着 物
US5930636A (en) * 1996-05-13 1999-07-27 Trw Inc. Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes
AU2012340789B2 (en) 2011-11-23 2017-05-04 Solventum Intellectual Properties Company Reduced-pressure systems, methods, and devices for simultaneously treating a plurality of tissue sites

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS548440B2 (ko) * 1975-02-26 1979-04-16
DE2639799C2 (de) * 1976-09-03 1984-04-12 Siemens AG, 1000 Berlin und 8000 München Halbleiterverbundanordnung
US4165470A (en) * 1976-09-20 1979-08-21 Honeywell Inc. Logic gates with forward biased diode load impedences
JPS5915176B2 (ja) * 1976-09-30 1984-04-07 サンケン電気株式会社 ガラス被覆半導体素子の製造方法
GB1572797A (en) * 1977-01-05 1980-08-06 Texas Instruments Ltd High speed high density logic
NL7712649A (nl) * 1977-11-17 1979-05-21 Philips Nv Geientegreerde schakeling.
US4129790A (en) * 1977-12-21 1978-12-12 International Business Machines Corporation High density integrated logic circuit
US4330723A (en) * 1979-08-13 1982-05-18 Fairchild Camera And Instrument Corporation Transistor logic output device for diversion of Miller current
US4682057A (en) * 1981-09-14 1987-07-21 Harris Corporation Circuit design technique to prevent current hogging when minimizing interconnect stripes by paralleling STL or ISL gate inputs
FR2589296B1 (fr) * 1985-10-29 1987-11-27 Thomson Csf Circuit de commande en parallele d'un grand nombre de cellules logiques de type stl
JPH05198985A (ja) * 1992-01-23 1993-08-06 Toshiba Corp 部品実装装置
JPH05331976A (ja) * 1992-06-03 1993-12-14 Kubota Corp 屋根パネルの接続構造

Also Published As

Publication number Publication date
EP0238671A1 (en) 1987-09-30
EP0238671A4 (en) 1988-02-03
KR920003011B1 (ko) 1992-04-13
JPS6281120A (ja) 1987-04-14
EP0238671B1 (en) 1991-12-18
US4943742A (en) 1990-07-24
WO1987002182A1 (en) 1987-04-09
DE3683037D1 (de) 1992-01-30

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Legal Events

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A201 Request for examination
E601 Decision to refuse application
J2X1 Appeal (before the patent court)

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G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee