FR2377704A1 - Dispositifs combinant des structures semi-conductrices pour des applications a basse tension et a haute tension, et methode de preparation - Google Patents

Dispositifs combinant des structures semi-conductrices pour des applications a basse tension et a haute tension, et methode de preparation

Info

Publication number
FR2377704A1
FR2377704A1 FR7800697A FR7800697A FR2377704A1 FR 2377704 A1 FR2377704 A1 FR 2377704A1 FR 7800697 A FR7800697 A FR 7800697A FR 7800697 A FR7800697 A FR 7800697A FR 2377704 A1 FR2377704 A1 FR 2377704A1
Authority
FR
France
Prior art keywords
doped zones
lightly doped
zone
low voltage
high power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7800697A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2377704A1 publication Critical patent/FR2377704A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne un circuit intégré semi-conducteur comprenant un corps semi-conducteur d'un type de conductivité; une première région très dopée d'une conductivité opposée à celle du corps, séparée de la surface du corps par une première région légèrement dopée d'une épaisseur prédétermimée, de la meme conductivité mais plus faible que la première région très dopée; une seconde région très dopée d'un type de conductivité opposée au corps, séparée de sa surface par une seconde région légèrement dopée de la même conductivité mais plus faible qu'elle. Selon l'invention, la seconde région légèrement dopée 22 a une seconde épaisseur prédéterminée différente de la première; un dispositif semi-conducteur 12 comprend la première région très dopée 20 et la première région légèrement dopée 18 ; un dispositif semi-conducteur 14 comprend la seconde région très dopée 24 et la seconde région légèrement dopée 22. L'invention s'applique notamment aux dispositifs basse tension et haute tension sur une seule pastille.
FR7800697A 1977-01-12 1978-01-11 Dispositifs combinant des structures semi-conductrices pour des applications a basse tension et a haute tension, et methode de preparation Pending FR2377704A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75882377A 1977-01-12 1977-01-12

Publications (1)

Publication Number Publication Date
FR2377704A1 true FR2377704A1 (fr) 1978-08-11

Family

ID=25053254

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7800697A Pending FR2377704A1 (fr) 1977-01-12 1978-01-11 Dispositifs combinant des structures semi-conductrices pour des applications a basse tension et a haute tension, et methode de preparation

Country Status (5)

Country Link
JP (1) JPS5388586A (fr)
DE (1) DE2800240A1 (fr)
FR (1) FR2377704A1 (fr)
IT (1) IT1088974B (fr)
SE (1) SE7714594L (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0009442A1 (fr) * 1978-09-15 1980-04-02 Thomson-Csf Transistors bipolaires à tension élevée, circuits intégrés comportant de tels transistors, et procédé de fabrication de tels circuits
EP1657752A1 (fr) * 2004-11-16 2006-05-17 ATMEL Germany GmbH Circuit intégré et méthode pour fabriquer un circuit intégré sur un substrat semi-conducteur

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2835330C3 (de) * 1978-08-11 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Integrierter bipolarer Halbleiterschaltkreis sowie Verfahren zu seiner Herstellung
DE2855768C3 (de) * 1978-12-22 1981-10-15 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integrierte Schaltung
US4272307A (en) * 1979-03-12 1981-06-09 Sprague Electric Company Integrated circuit with I2 L and power transistors and method for making
EP0057549B1 (fr) * 1981-01-29 1987-07-29 Kabushiki Kaisha Toshiba Dispositif semi-conducteur
JPS58142564A (ja) * 1982-02-18 1983-08-24 Nec Corp 半導体装置とその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54156B2 (fr) * 1974-11-27 1979-01-06
JPS51116687A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Semiconductor integrated circuit device
JPS51132784A (en) * 1975-05-14 1976-11-18 Hitachi Ltd Production method of semiconductor device
JPS5261976A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its production

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0009442A1 (fr) * 1978-09-15 1980-04-02 Thomson-Csf Transistors bipolaires à tension élevée, circuits intégrés comportant de tels transistors, et procédé de fabrication de tels circuits
EP1657752A1 (fr) * 2004-11-16 2006-05-17 ATMEL Germany GmbH Circuit intégré et méthode pour fabriquer un circuit intégré sur un substrat semi-conducteur

Also Published As

Publication number Publication date
SE7714594L (sv) 1978-07-13
JPS5388586A (en) 1978-08-04
IT1088974B (it) 1985-06-10
DE2800240A1 (de) 1978-07-13

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