FR2377704A1 - Dispositifs combinant des structures semi-conductrices pour des applications a basse tension et a haute tension, et methode de preparation - Google Patents
Dispositifs combinant des structures semi-conductrices pour des applications a basse tension et a haute tension, et methode de preparationInfo
- Publication number
- FR2377704A1 FR2377704A1 FR7800697A FR7800697A FR2377704A1 FR 2377704 A1 FR2377704 A1 FR 2377704A1 FR 7800697 A FR7800697 A FR 7800697A FR 7800697 A FR7800697 A FR 7800697A FR 2377704 A1 FR2377704 A1 FR 2377704A1
- Authority
- FR
- France
- Prior art keywords
- doped zones
- lightly doped
- zone
- low voltage
- high power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
L'invention concerne un circuit intégré semi-conducteur comprenant un corps semi-conducteur d'un type de conductivité; une première région très dopée d'une conductivité opposée à celle du corps, séparée de la surface du corps par une première région légèrement dopée d'une épaisseur prédétermimée, de la meme conductivité mais plus faible que la première région très dopée; une seconde région très dopée d'un type de conductivité opposée au corps, séparée de sa surface par une seconde région légèrement dopée de la même conductivité mais plus faible qu'elle. Selon l'invention, la seconde région légèrement dopée 22 a une seconde épaisseur prédéterminée différente de la première; un dispositif semi-conducteur 12 comprend la première région très dopée 20 et la première région légèrement dopée 18 ; un dispositif semi-conducteur 14 comprend la seconde région très dopée 24 et la seconde région légèrement dopée 22. L'invention s'applique notamment aux dispositifs basse tension et haute tension sur une seule pastille.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75882377A | 1977-01-12 | 1977-01-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2377704A1 true FR2377704A1 (fr) | 1978-08-11 |
Family
ID=25053254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7800697A Pending FR2377704A1 (fr) | 1977-01-12 | 1978-01-11 | Dispositifs combinant des structures semi-conductrices pour des applications a basse tension et a haute tension, et methode de preparation |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5388586A (fr) |
DE (1) | DE2800240A1 (fr) |
FR (1) | FR2377704A1 (fr) |
IT (1) | IT1088974B (fr) |
SE (1) | SE7714594L (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0009442A1 (fr) * | 1978-09-15 | 1980-04-02 | Thomson-Csf | Transistors bipolaires à tension élevée, circuits intégrés comportant de tels transistors, et procédé de fabrication de tels circuits |
EP1657752A1 (fr) * | 2004-11-16 | 2006-05-17 | ATMEL Germany GmbH | Circuit intégré et méthode pour fabriquer un circuit intégré sur un substrat semi-conducteur |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2835330C3 (de) * | 1978-08-11 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Integrierter bipolarer Halbleiterschaltkreis sowie Verfahren zu seiner Herstellung |
DE2855768C3 (de) * | 1978-12-22 | 1981-10-15 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte Schaltung |
US4272307A (en) * | 1979-03-12 | 1981-06-09 | Sprague Electric Company | Integrated circuit with I2 L and power transistors and method for making |
EP0057549B1 (fr) * | 1981-01-29 | 1987-07-29 | Kabushiki Kaisha Toshiba | Dispositif semi-conducteur |
JPS58142564A (ja) * | 1982-02-18 | 1983-08-24 | Nec Corp | 半導体装置とその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54156B2 (fr) * | 1974-11-27 | 1979-01-06 | ||
JPS51116687A (en) * | 1975-04-07 | 1976-10-14 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS51132784A (en) * | 1975-05-14 | 1976-11-18 | Hitachi Ltd | Production method of semiconductor device |
JPS5261976A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device and its production |
-
1977
- 1977-12-01 IT IT30285/77A patent/IT1088974B/it active
- 1977-12-21 SE SE7714594A patent/SE7714594L/xx unknown
-
1978
- 1978-01-04 DE DE19782800240 patent/DE2800240A1/de active Pending
- 1978-01-11 FR FR7800697A patent/FR2377704A1/fr active Pending
- 1978-01-11 JP JP233078A patent/JPS5388586A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0009442A1 (fr) * | 1978-09-15 | 1980-04-02 | Thomson-Csf | Transistors bipolaires à tension élevée, circuits intégrés comportant de tels transistors, et procédé de fabrication de tels circuits |
EP1657752A1 (fr) * | 2004-11-16 | 2006-05-17 | ATMEL Germany GmbH | Circuit intégré et méthode pour fabriquer un circuit intégré sur un substrat semi-conducteur |
Also Published As
Publication number | Publication date |
---|---|
SE7714594L (sv) | 1978-07-13 |
JPS5388586A (en) | 1978-08-04 |
IT1088974B (it) | 1985-06-10 |
DE2800240A1 (de) | 1978-07-13 |
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