SE7714594L - Integrerad halvledarkrets och sett att tillverka den - Google Patents

Integrerad halvledarkrets och sett att tillverka den

Info

Publication number
SE7714594L
SE7714594L SE7714594A SE7714594A SE7714594L SE 7714594 L SE7714594 L SE 7714594L SE 7714594 A SE7714594 A SE 7714594A SE 7714594 A SE7714594 A SE 7714594A SE 7714594 L SE7714594 L SE 7714594L
Authority
SE
Sweden
Prior art keywords
manufacture
way
semiconductor circuit
integrated semiconductor
integrated
Prior art date
Application number
SE7714594A
Other languages
English (en)
Inventor
H Khajezadeh
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7714594L publication Critical patent/SE7714594L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
SE7714594A 1977-01-12 1977-12-21 Integrerad halvledarkrets och sett att tillverka den SE7714594L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75882377A 1977-01-12 1977-01-12

Publications (1)

Publication Number Publication Date
SE7714594L true SE7714594L (sv) 1978-07-13

Family

ID=25053254

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7714594A SE7714594L (sv) 1977-01-12 1977-12-21 Integrerad halvledarkrets och sett att tillverka den

Country Status (5)

Country Link
JP (1) JPS5388586A (sv)
DE (1) DE2800240A1 (sv)
FR (1) FR2377704A1 (sv)
IT (1) IT1088974B (sv)
SE (1) SE7714594L (sv)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2835330C3 (de) * 1978-08-11 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Integrierter bipolarer Halbleiterschaltkreis sowie Verfahren zu seiner Herstellung
FR2436501A1 (fr) * 1978-09-15 1980-04-11 Thomson Csf Transistors bipolaires a tension elevee, circuits integres comportant de tels transistors, et procede de fabrication de tels circuits
DE2855768C3 (de) * 1978-12-22 1981-10-15 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integrierte Schaltung
US4272307A (en) * 1979-03-12 1981-06-09 Sprague Electric Company Integrated circuit with I2 L and power transistors and method for making
EP0057549B1 (en) * 1981-01-29 1987-07-29 Kabushiki Kaisha Toshiba Semiconductor device
JPS58142564A (ja) * 1982-02-18 1983-08-24 Nec Corp 半導体装置とその製造方法
DE102004055183B3 (de) * 2004-11-16 2006-07-13 Atmel Germany Gmbh Integrierte Schaltung und Verfahren zur Herstellung einer integrierten Schaltung auf einem Halbleiterplättchen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54156B2 (sv) * 1974-11-27 1979-01-06
JPS51116687A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Semiconductor integrated circuit device
JPS51132784A (en) * 1975-05-14 1976-11-18 Hitachi Ltd Production method of semiconductor device
JPS5261976A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its production

Also Published As

Publication number Publication date
FR2377704A1 (fr) 1978-08-11
JPS5388586A (en) 1978-08-04
DE2800240A1 (de) 1978-07-13
IT1088974B (it) 1985-06-10

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