CN104425245B - 反向导通绝缘栅双极型晶体管制造方法 - Google Patents

反向导通绝缘栅双极型晶体管制造方法 Download PDF

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CN104425245B
CN104425245B CN201310374240.3A CN201310374240A CN104425245B CN 104425245 B CN104425245 B CN 104425245B CN 201310374240 A CN201310374240 A CN 201310374240A CN 104425245 B CN104425245 B CN 104425245B
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insulated gate
bipolar transistor
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CN104425245A (zh
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张硕
芮强
王根毅
邓小社
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CSMC Technologies Corp
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Abstract

本发明提供一种反向导通绝缘栅双极型晶体管制造方法，该制造方法采用多晶硅来填充反向导通绝缘栅双极型晶体管背面的沟槽。只需要精确控制多晶硅的掺杂浓度就可以控制反向导通绝缘栅双极型晶体管背面的反向导通二极管的参数，工艺控制要求较低。该反向导通绝缘栅双极型晶体管制造方法对制造工艺控制要求较低，制造难度较小。

Description

反向导通绝缘栅双极型晶体管制造方法
技术领域
本发明涉及一种半导体元件制造方法，特别是涉及一种反向导通绝缘栅双极型晶体管制造方法。
背景技术
绝缘栅双极型晶体管(IGBT，Insulated Gate Bipolar Transistor)是一种常用的通过电压控制的功率开关器件。其具有输入电容大、输入阻抗高、驱动电流小、速度快、耐压高、热稳定性强、工作温度高、控制电路简单等特点，现阶段已经成为电力电子装置的主流器件。反向导通绝缘栅双极型晶体管是一种新型的IGBT器件，它是将IGBT结构以及反向导通二极管结构集成在同一个芯片上。这样可以改善非平衡载流子的通道，优化拖尾电流。反向导通IGBT器件具有小尺寸、高功率密度、低成本、高可靠性等诸多优点。
常见的反向导通IGBT的制造方法中对器件背面反向导通二极管结构的制造方法主要有两种。一种反向导通IGBT的反向导通二极管结构的制造方法是采用两次背面光刻来实现。具体为先进行有选择的注入和扩散形成P+型区域，然后再次进行有选择的注入和扩散形成N+型区域，这样就可以在反向导通IGBT的背面间隔性的形成N+和P+区域。间隔性的N+和P+区域即为反向导通二极管结构。采用这种制造方法形成的反向导通IGBT的背面N+区域较浅，对工艺的控制要求较高。一旦N+区域的浓度偏高，所形成的反向导通IGBT正向导通时将无法形成大注入效应而丧失反向导通IGBT的功能。
另一种反向导通IGBT的反向导通二极管结构的制造方法如下。在正面工艺完成及背面P+层形成后，进行挖槽，然后利用背面金属填充槽，最终形成反向导通IGBT的反向导通二极管结构。该反向导通IGBT的反向导通二极管结构的制造方法主要采用挖槽填充背面金属的方式来形成反向导通二极管结构，但是反向导通IGBT背面槽内金属由于受限于反向导通IGBT集电极金属的要求，反向导通二极管的参数只能通过调节挖槽的宽度和深度来调节，工艺调节起来麻烦，对工艺控制要求较高。因此，从上述两种工艺方法可以看到，常见的反向导通IGBT器件背面反向导通二极管结构的制造方法制造工艺控制要求较高，制造难度较大。
发明内容
基于此，有必要提供一种反向导通绝缘栅双极型晶体管制造方法，其能够降低工艺控制要求，降低制造难度。
一种反向导通绝缘栅双极型晶体管制造方法，所述绝缘栅双极型晶体管制造方法包括如下步骤：制备N型衬底；在所述N型衬底正面生长栅氧化层；在所述栅氧化层上淀积多晶硅栅电极；通过光刻、刻蚀和离子注入工艺在N型衬底上形成P阱；通过光刻和离子注入工艺在P阱内形成N+区和正面P+区；在所述N型衬底正面淀积介质层；在所述介质层上淀积保护层；通过背面减薄工艺减薄所述N型衬底；在所述N型衬底的背面注入P型杂质形成背面P+区域；采用光刻、刻蚀工艺在所述N型衬底的背面形成沟槽；在所述N型衬底的背面淀积多晶硅填充所述沟槽，并蚀刻掉沟槽之外区域的多晶硅；去除N型衬底正面的保护层；选择性刻蚀介质层形成短接N+区和正面P+区的接触孔，并形成正面金属层；在所述N型衬底正面淀积钝化层；在所述N型衬底背面进行背面金属化工艺，形成背面金属层。
在其中一个实施例中，所述在所述N型衬底背面进行背面金属化工艺，形成背面金属层的步骤之后还包括通过局部辐照技术控制N型衬底中局部区域的载流子寿命。
在其中一个实施例中，所述局部辐照技术采用电子或者质子对所述N型衬底进行辐照。
在其中一个实施例中，所述N型衬底的背面形成的沟槽的形状为长方形。
在其中一个实施例中，所述N型衬底的背面形成的沟槽的深度为1～20μm，宽度为1～30μm，相邻两个沟槽的间距为50～300μm。
在其中一个实施例中，所述N型衬底的背面形成的沟槽中淀积的多晶硅为N型多晶硅。
在其中一个实施例中，所述N型衬底的背面形成的沟槽中淀积的多晶硅的掺杂浓度为1E17～1E21cm-3。
在其中一个实施例中，所述背面金属层自N型衬底向外依次为铝、钛、镍、银。
在其中一个实施例中，所述介质层的材质为二氧化硅和硼磷硅玻璃。
在其中一个实施例中，所述保护层的材质为氮化硅。
上述反向导通绝缘栅双极型晶体管制造方法采用多晶硅来填充反向导通绝缘栅双极型晶体管背面的沟槽。只需要精确控制多晶硅的掺杂浓度就可以控制反向导通绝缘栅双极型晶体管背面的反向导通二极管的参数，工艺控制要求较低。该反向导通绝缘栅双极型晶体管制造方法对制造工艺控制要求较低，制造难度较小。
附图说明
图1为一个实施例的反向导通绝缘栅双极型晶体管制造方法流程图；
图2～17为图1所示的场中止型绝缘栅双极型晶体管制造方法流程中对应的反向导通绝缘栅双极型晶体管的结构示意图。
具体实施方式
请参考图1，本发明的一个实施方式提供一种反向导通绝缘栅双极型晶体管制造方法。该反向导通绝缘栅双极型晶体管制造方法包括如下步骤。
步骤S111，制备N型衬底110。如图2所示。在该实施例中，N型衬底110为N型硅衬底。
步骤S112，在N型衬底110正面生长栅氧化层121。如图3所示。此处栅氧化层121的厚度为600埃～1500埃。
步骤S113，在栅氧化层121上淀积多晶硅栅电极122。如图3所示。
步骤S114，通过光刻、刻蚀和离子注入工艺在N型衬底110上形成P阱123。请参考图4，通过光刻工艺选择性的刻蚀多晶硅栅电极122和栅氧化层121，从而刻蚀出P阱123的注入窗口。请参考图5，通过自对准注入工艺在P阱123的注入窗口内注入P型杂质，然后通过推阱形成P阱123。
步骤S115，通过光刻和离子注入工艺在P阱123内形成N+区124和正面P+区125。请参考图6，通过光刻工艺选择性的在P阱123中进行离子注入和推阱形成N+区124。请参考图7，通过光刻工艺选择性的在P阱123中进行离子注入和推阱形成正面P+区125。N+区124主要是用来做为该反向导通绝缘栅双极型晶体管的发射极。
步骤S116，在N型衬底110正面淀积介质层126。如图8所示。其中，此处介质层126的材质为二氧化硅和硼磷硅玻璃（boro-phospho-silicate-glass，BPSG）。
步骤S117，在介质层126上淀积保护层127。如图9所示。其中，保护层127的材质为氮化硅。
步骤S118，通过背面减薄工艺减薄N型衬底110。该步骤S118主要是将N型衬底110减薄到所需要到厚度。
步骤S121，在N型衬底110的背面注入P型杂质形成背面P+区域131。如图10所示。
步骤S122，采用光刻、刻蚀工艺在N型衬底110的背面形成沟槽132。如图11所示。在该实施例中，N型衬底110的背面形成的沟槽132的形状为长方形。当然，N型衬底110的背面形成的沟槽132也可以为圆形、椭圆形、梯形等合适的形状。当N型衬底110的背面形成的沟槽132的形状为长方形时，该沟槽132的深度可以为1～20μm，宽度为1～30μm，相邻两个沟槽132的间距为50～300μm。
步骤S123，在N型衬底110的背面淀积多晶硅填充沟槽132，并蚀刻掉沟槽132之外区域的多晶硅。如图12所示。该步骤S123主要是为了在沟槽132中填充多晶硅以形成反向导通二极管。所制造的反向导通绝缘栅双极型晶体管的背面反向导通二极管的参数可以通过调节沟槽132中多晶硅的掺杂浓度进行调节，工艺调节难度低，工艺控制容易。这样就能降低反向导通绝缘栅双极型晶体管的制造难度。当然，反向导通绝缘栅双极型晶体管的背面反向导通二极管的参数也可以通过调整沟槽132的宽度和深度来进行调节，或者同时调节沟槽132中多晶硅的掺杂浓度和沟槽132的宽度和深度进行调节。这样，就能降低反向导通绝缘栅双极型晶体管的工艺调节难度低，从而降低制造难度。在该实施例中，N型衬底110的背面形成的沟槽132中淀积的多晶硅为N型多晶硅。沟槽132中淀积的N型多晶硅的掺杂浓度范围为1E17～1E21cm-3。
步骤S124，去除N型衬底正面的保护层127。如图13所示。
步骤S125，选择性刻蚀介质层126形成短接N+区124和正面P+区125的接触孔，并形成正面金属层128。如图14所示。从上述反向导通绝缘栅双极型晶体管的制造流程可以看到，步骤S122和步骤S122是在步骤S116之后进行的。也就是说，在N型衬底110的背面形成沟槽132和在沟槽132中淀积多晶硅的步骤是在N型衬底110正面淀积介质层126之后进行制作，而不是在将整个反向导通绝缘栅双极型晶体管的正面工艺加工完成以后制作。这样的制造流程具有如下好处。首先，步骤S121中的N型衬底110的背面P型杂质注入之后，后续有孔回流（孔回流是在步骤S125，选择性刻蚀介质层126形成短接N+区124和正面P+区125的接触孔，并形成正面金属层128中，该步骤S125的温度大概在850摄氏度左右）等正面热过程的存在，N型衬底110的背面P型杂质的激活率很高，不需要进行单独的退火。这样，可以省去N型衬底110的背面P型杂质热退火的步骤。其次，N型衬底110的背面沟槽123中的多晶硅和正面的多晶硅分开进行工艺，这样多晶硅的掺杂浓度容易控制。
步骤S126，在N型衬底110正面淀积钝化层129。如图15所示。此处还会蚀刻处焊盘区域。
步骤S127，在N型衬底110背面进行背面金属化工艺，形成背面金属层133。如图16所示。在该实施例中，N型衬底110背面的背面金属层133自N型衬底向外依次为铝、钛、镍、银。也就是说最外层为金属银。
步骤S128，通过局部辐照技术控制N型衬底110中局部区域111的载流子寿命。如图17所示。在该实施例中，局部辐照技术采用电子或者质子对N型衬底110进行辐照以控制N型衬底110中局部区域111的载流子寿命。这样就完成了反向导通绝缘栅双极型晶体管的制造。
上述反向导通绝缘栅双极型晶体管制造方法采用多晶硅来填充反向导通绝缘栅双极型晶体管背面的沟槽。这样，只需要精确控制多晶硅的掺杂浓度就可以控制反向导通绝缘栅双极型晶体管背面的反向导通二极管的参数，工艺控制要求较低。因此，该反向导通绝缘栅双极型晶体管制造方法对制造工艺控制要求较低，制造难度较小。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

1.一种反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述绝缘栅双极型晶体管制造方法包括如下步骤：
制备N型衬底；
在所述N型衬底正面生长栅氧化层；
在所述栅氧化层上淀积多晶硅栅电极；
通过光刻、刻蚀和离子注入工艺在N型衬底上形成P阱；
通过光刻和离子注入工艺在P阱内形成N+区和正面P+区；
在所述N型衬底正面淀积介质层；
在所述介质层上淀积保护层；
通过背面减薄工艺减薄所述N型衬底；
在所述N型衬底的背面注入P型杂质形成背面P+区域；
采用光刻、刻蚀工艺在所述N型衬底的背面形成沟槽；
在所述N型衬底的背面淀积多晶硅填充所述沟槽，并蚀刻掉沟槽之外区域的多晶硅；
去除N型衬底正面的保护层；
选择性刻蚀介质层形成短接N+区和正面P+区的接触孔，并形成正面金属层；
在所述N型衬底正面淀积钝化层；
在所述N型衬底背面进行背面金属化工艺，形成背面金属层；
其中，所述采用光刻、刻蚀工艺在所述N型衬底的背面形成沟槽的步骤和所述在所述N型衬底的背面淀积多晶硅填充所述沟槽，并蚀刻掉沟槽之外区域的多晶硅的步骤，在所述介质层上淀积保护层的步骤之后进行制作，且在所述选择性刻蚀介质层形成短接N+区和正面P+区的接触孔，并形成正面金属层的步骤之前进行制作。
2.根据权利要求1所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述在所述N型衬底背面进行背面金属化工艺，形成背面金属层的步骤之后还包括通过局部辐照技术控制N型衬底中局部区域的载流子寿命。
3.根据权利要求2所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述局部辐照技术采用电子或者质子对所述N型衬底进行辐照。
4.根据权利要求1所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述N型衬底的背面形成的沟槽的形状为长方形。
5.根据权利要求4所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述N型衬底的背面形成的沟槽的深度为1～20μm，宽度为1～30μm，相邻两个沟槽的间距为50～300μm。
6.根据权利要求1所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述N型衬底的背面形成的沟槽中淀积的多晶硅为N型多晶硅。
7.根据权利要求6所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述N型衬底的背面形成的沟槽中淀积的多晶硅的掺杂浓度为1E17～1E21cm-3。
8.根据权利要求1至7中任一权利要求所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述背面金属层自N型衬底向外依次为铝、钛、镍、银。
9.根据权利要求1至7中任一权利要求所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述介质层的材质为二氧化硅和硼磷硅玻璃。
10.根据权利要求1至7中任一权利要求所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述保护层的材质为氮化硅。
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