CN104425259B - 反向导通绝缘栅双极型晶体管制造方法 - Google Patents

反向导通绝缘栅双极型晶体管制造方法 Download PDF

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CN104425259B
CN104425259B CN201310392737.8A CN201310392737A CN104425259B CN 104425259 B CN104425259 B CN 104425259B CN 201310392737 A CN201310392737 A CN 201310392737A CN 104425259 B CN104425259 B CN 104425259B
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insulated gate
bipolar transistor
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CN104425259A (zh
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王万礼
邓小社
王根毅
芮强
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CSMC Technologies Corp
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Wuxi CSMC Semiconductor Co Ltd
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Abstract

本发明提供一种反向导通绝缘栅双极型晶体管制造方法，其通过激光扫描工艺对衬底的背面进行平坦化工艺形成P型和N型间隔结构，激光扫描工艺可以只对需要退火的背面结构进行工艺，从而解决反向导通绝缘栅双极型晶体管的正面结构限制背面退火温度不能太高的问题，改善反向导通绝缘栅双极型晶体管的背面结构中N型和P型杂质激活效率不高现象，提高反向导通绝缘栅双极型晶体管的性能。

Description

反向导通绝缘栅双极型晶体管制造方法
技术领域
本发明涉及一种半导体元件制造方法，特别是涉及一种反向导通绝缘栅双极型晶体管制造方法。
背景技术
绝缘栅双极型晶体管(IGBT，Insulated Gate Bipolar Transistor)是一种常用的通过电压控制的功率开关器件。其具有输入电容大、输入阻抗高、驱动电流小、速度快、耐压高、热稳定性强、工作温度高、控制电路简单等特点，现阶段已经成为电力电子装置的主流器件。反向导通绝缘栅双极型晶体管是一种新型的IGBT器件，它是将IGBT结构以及反向导通二极管结构集成在同一个芯片上。这样可以改善非平衡载流子的通道，优化拖尾电流。反向导通IGBT器件具有小尺寸、高功率密度、低成本、高可靠性等诸多优点。
常见的反向导通IGBT的背面结构制备是在正面结构制作、硅片减薄、正面涂胶或贴膜保护、背面涂胶、曝光、显影等工序后采用注入的方式进行P型杂质掺杂制备背面发射区，然后将正面保护层去除，经过退火、背金工艺完成器件的制造。该反向导通IGBT制造方法会由于正面结构的限制而导致背面退火温度不会太高，从而导致N+和P+杂质激活效率不高，影响制造出来的反向导通IGBT的性能。
发明内容
基于此，有必要提供一种反向导通绝缘栅双极型晶体管制造方法，其能够改善反向导通绝缘栅双极型晶体管的背面结构中N型和P型杂质激活效率不高现象，提高反向导通绝缘栅双极型晶体管的性能。
一种反向导通绝缘栅双极型晶体管制造方法，所述反向导通绝缘栅双极型晶体管制造方法包括如下步骤：提供正面形成IGBT结构的衬底；在所述衬底的背面注入P+离子；采用光刻、刻蚀工艺在所述衬底的背面形成沟槽；采用激光扫描工艺对所述衬底的背面进行平坦化处理形成P型和N型间隔结构；进行背面金属化工艺，形成背面集电极。
在其中一个实施例中，所述提供正面形成IGBT结构的衬底的步骤之后还包括减薄所述衬底和在所述衬底的背面注入N+离子形成电场中止层的步骤。
在其中一个实施例中，所述提供正面形成IGBT结构的衬底的步骤包括在衬底的背面注入N+离子形成电场中止层和在衬底正面形成IGBT结构的步骤。
在其中一个实施例中，所述采用光刻、刻蚀工艺在所述衬底的背面形成沟槽的步骤包括如下步骤：淀积一层介质层；通过光刻工艺去除部分介质层形成需要的图形；通过刻蚀工艺形成沟槽；去除介质层。
在其中一个实施例中，所述沟槽的深度为0.05～50μm，宽度0.1～500μm。
在其中一个实施例中，所述沟槽在所述衬底的背面形成的图形为圆形或者多边形。
在其中一个实施例中，所述衬底的电阻率为0.001～200ohm*cm，厚度为100～1000μm。
在其中一个实施例中，所述激光扫描工艺使用的激光为脉冲激光。
在其中一个实施例中，所述脉冲激光的脉冲持续时间为100ns～2000ns，能量密度为1～10J/cm2，脉冲激光的波长为200nm～10μm。
上述反向导通绝缘栅双极型晶体管制造方法通过激光扫描工艺对衬底的背面进行平坦化形成P型和N型间隔结构，激光扫描工艺可以只对需要退火的背面结构进行，从而解决反向导通绝缘栅双极型晶体管的正面结构限制背面退火温度不能太高的问题，改善反向导通绝缘栅双极型晶体管的背面结构中N型和P型杂质激活效率不高现象，提高反向导通绝缘栅双极型晶体管的性能。
附图说明
图1为一个实施例的场中止型绝缘栅双极型晶体管制造方法流程图；
图2～8为图1所示的场中止型绝缘栅双极型晶体管制造方法流程中对应的结构图；
图9为场中止型绝缘栅双极型晶体管的RC结构剖面图；
图10为图9所示的场中止型绝缘栅双极型晶体管的RC结构俯视图；
图11为一个实施例的采用光刻、刻蚀工艺在衬底的背面形成沟槽的方法流程图。
具体实施方式
请参考图1，本发明的一个实施方式提供一种反向导通绝缘栅双极型晶体管制造方法。目前比较常用的反向导通绝缘栅双极型晶体管包括场中止反向导通（fieldstopreverse conducting，FS-RC）型绝缘栅双极型晶体管和非穿通反向导通(non-punchthrough reverse conducting，NPT-RC)型绝缘栅双极型晶体管。下面将以场中止型反向导通绝缘栅双极型晶体管为例介绍一下反向导通绝缘栅双极型晶体管的制造方法。
请参考图1，在该实施例中，场中止反向导通型绝缘栅双极型晶体管制造方法包括如下步骤：
步骤S110，提供正面形成IGBT结构的衬底。请参考图2，在该实施例中，衬底110为N型硅衬底。该N型硅衬底的电阻率为0.001～200ohm*cm，厚度范围100～1000μm。其中，此处的IGBT为FS-RC(场中止反向导通)型IGBT，FS-RC型IGBT正面结构的制造流程与常用的FS(场中止)型IGBT正面结构的制造流程相同，主要是形成栅极和集电极。此处不再描述。
步骤S120，减薄衬底110。通过减薄工艺使衬底110达到目标厚度，之后再通过湿法腐蚀工艺去除掉减薄衬底110时所产生的损伤层。在其他实施例中，可能不需要此减薄步骤。
步骤S130，在衬底110的背面注入N+离子形成电场中止层120。请参考图3。该步骤S130主要是为了在衬底110的背面形成电场中止层120。在其它实施例中，在衬底110的背面注入N+离子形成电场中止层120的工艺也可以是在正面形成IGBT结构前在衬底110背面形成电场中止层120，但是形成电场中止层120后不需要减薄步骤。也就是说步骤S110，提供正面形成IGBT结构的衬底的步骤包括在衬底的背面注入或扩散N型杂质形成电场中止层和在衬底正面形成IGBT结构的步骤。此处是在正面IGBT结构形成后形成电场中止层120。
步骤S140，在衬底110的背面注入P+离子。如图4所示，电场中止层120上注入P+离子形成有P+层130。该步骤是为后续形成P型和N型间隔结构做准备。
步骤S150，采用光刻、刻蚀工艺在衬底110的背面形成沟槽140。
请参考图11，该步骤S150具体包括如下步骤。
步骤S151，淀积一层介质层。在该实施例中，这一层介质层为SiO2，在其它实施例中也可以为其它合适的介质层。
步骤S152，通过光刻工艺去除部分介质层形成需要的图形。该步骤主要是一个图形转化的过程，以去除部分介质层形成需要的图形，方便后续在电场中止层120形成需要的沟槽140。
步骤S153，通过刻蚀工艺形成沟槽140。如图5所示，刻蚀工艺形成的沟槽140的深度为0.05～50μm，宽度0.1～500μm。沟槽140在衬底110的背面形成的图形为圆形或者多边形，当然也可以为其它合适的形状。在该实施例中，沟槽140在衬底110的背面形成的图形为圆形。如图10所示。
步骤S154，去除介质层。把步骤S151中淀积的一层介质层去除。去除介质层后的结构如图5所示。
步骤S160，采用激光扫描工艺对衬底110的背面进行平坦化处理形成P型和N型间隔结构。如图6和图7所示。此处的P型和N型间隔结构即为该场中止反向导通型绝缘栅双极型晶体管的RC（Reverse Conducting，反向导通）结构。在该步骤S160中，可以通过调整所使用激光的功率、扫描速率等参数达到预期平整度的要求。在该实施例中，进行激光扫描工艺所使用的激光为脉冲激光200。该脉冲激光200的脉冲持续时间为100ns～2000ns，能量密度为1～10J/cm2，脉冲激光200的波长为200nm～10μm。激光扫描工艺不仅能够实现平坦化形成RC结构，还可以完成衬底110背面注入的N型和P型杂质的激活，这样就不需要额外的退火步骤。减少了一道工艺流程。另外，由于激光扫描工艺可以只对需要退火的衬底110的背面结构进行工艺，对衬底110的正面影响极小，所以可以解决场中止反向导通型绝缘栅双极型晶体管的正面结构限制背面退火温度不能太高的问题，从而改善反向导通绝缘栅双极型晶体管的背面结构中N型和P型杂质激活效率不高现象，提高反向导通绝缘栅双极型晶体管的性能。
步骤S170，进行背面金属化工艺，形成背面集电极150。如图8所示，经过背面金属化工艺即可形成背面集电极150，也就完成了该场中止反向导通型绝缘栅双极型晶体管的制造。
请参考图9和图10，图中的a为N+区的宽度，b为两个N+区之间的距离，c为P+区的宽度。b、c的尺寸可以通过光刻步骤来调整。当需要调整该场中止反向导通型绝缘栅双极型晶体管的反向导通二极管的参数时可以通过调整参数a、b、c和N+区和P+区的形状来实现。其中，通过调整激光扫描工艺中激光的功率、扫描的速率可以控制平坦化的情况，从而调整a的值。在步骤S150中可以调整b和c的值以及N+区和P+区的形状。
上面介绍了场中止反向导通型绝缘栅双极型晶体管的制造方法，非穿通反向导通型绝缘栅双极型晶体管的制造方法与场中止反向导通型绝缘栅双极型晶体管的制造方法相类似。不同之处在于，非穿通反向导通型绝缘栅双极型晶体管的制造流程中不需要步骤S130，即不需要在衬底的背面注入N+离子形成电场中止层。另外，非穿通反向导通型绝缘栅双极型晶体管的制造时采用的衬底110的电阻率为0.001～200ohm*cm，厚度为100～1000μm。其它制造流程与上述场中止反向导通型绝缘栅双极型晶体管的制造流程相同，在此不再描述。
在非穿通反向导通型绝缘栅双极型晶体管的制造方法中同样采用了激光扫描工艺对衬底的背面进行平坦化处理形成P型和N型间隔结构。因此，非穿通反向导通型绝缘栅双极型晶体管的制造方法同样能够改善反向导通绝缘栅双极型晶体管的背面结构中N型和P型杂质激活效率不高现象，提高反向导通绝缘栅双极型晶体管的性能，同时也减少了一道退火工艺流程。
本发明所采用的反向导通绝缘栅双极型晶体管制造方法通过激光扫描工艺对衬底的背面进行平坦化处理形成P型和N型间隔结构，激光扫描工艺可以只对需要退火的背面结构进行工艺，从而解决反向导通绝缘栅双极型晶体管的正面结构限制背面退火温度不能太高的问题，改善反向导通绝缘栅双极型晶体管的背面结构中N型和P型杂质激活效率不高现象，提高反向导通绝缘栅双极型晶体管的性能。另外，激光扫描工艺还可以完成衬底背面注入的N型和P型杂质的激活，这样就不需要额外的退火步骤，从而减少了一道工艺流程。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (9)

1.一种反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述反向导通绝缘栅双极型晶体管制造方法包括如下步骤：
提供正面形成IGBT结构的衬底；
在所述衬底的背面注入P+离子形成有P+层；
采用光刻、刻蚀工艺在所述衬底的背面形成沟槽；
采用激光扫描工艺对所述衬底的背面进行平坦化处理形成P型和N型间隔结构，所述P型和N型间隔结构为所述反向导通型绝缘栅双极型晶体管的反向导通结构；
进行背面金属化工艺，形成背面集电极。
2.根据权利要求1所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述提供正面形成IGBT结构的衬底的步骤之后还包括减薄所述衬底和在所述衬底的背面注入N+离子形成电场中止层的步骤。
3.根据权利要求1所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述提供正面形成IGBT结构的衬底的步骤包括在衬底的背面注入N+离子形成电场中止层和在衬底正面形成IGBT结构的步骤。
4.根据权利要求1所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述采用光刻、刻蚀工艺在所述衬底的背面形成沟槽的步骤包括如下步骤：淀积一层介质层；
通过光刻工艺去除部分介质层形成需要的图形；
通过刻蚀工艺形成沟槽；
去除介质层。
5.根据权利要求4所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述沟槽的深度为0.05～50μm，宽度0.1～500μm。
6.根据权利要求4所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述图形为圆形或者多边形。
7.根据权利要求1所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述衬底的电阻率为0.001～200ohm*cm，厚度为100～1000μm。
8.根据权利要求1至7中任一权利要求所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述激光扫描工艺使用的激光为脉冲激光。
9.根据权利要求8所述的反向导通绝缘栅双极型晶体管制造方法，其特征在于，所述脉冲激光的脉冲持续时间为100ns～2000ns，能量密度为1～10J/cm2，脉冲激光的波长为200nm～10μm。
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