KR900008704A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR900008704A
KR900008704A KR1019890017211A KR890017211A KR900008704A KR 900008704 A KR900008704 A KR 900008704A KR 1019890017211 A KR1019890017211 A KR 1019890017211A KR 890017211 A KR890017211 A KR 890017211A KR 900008704 A KR900008704 A KR 900008704A
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South Korea
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semiconductor device
semiconductor
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contact
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KR1019890017211A
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English (en)
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야코부스 마리아 볼렌 람베스투스
빌렘 알베르트 영 에드바르드
Original Assignee
에프. 제이. 스미트
엔. 브이. 필립스 글로아이람펜파브리켄
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Publication of KR900008704A publication Critical patent/KR900008704A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 반도체 장치를 횡단면으로 도시한 개략도,
제2도 및 제3도는 공지된 다이오드와 본 발명에 따른 다이오드에 대해 측정 결과를 나타내는 도면.

Claims (8)

  1. 제1전도형의 제1영역과, 충분히 높은 전류 밀도에서 순 방향으로 전자기 방사선을 방출할 수 있는 Pn접합을 상기 제1영역과 함께 형성하는 제2반전도형의 제2영역과, 반도체 장치의 활성 영역의 면적에서 방해 면적을 갖는 제2영역에 증착된 제1전도형의 공핍층과, 반도체의 한 표면에 인접하여 이 표면으로 부터 상기 방해 면적에서 제2영역으로 확장하는 제2전도형 접촉 영역과, 상기 공핍층에 증착되고, 또한 상기 표면에도 인접하고, 접촉 영역에 접속된 제2전도형의 높게 도핑된 접촉층과, 상기 제1영역에 제공된 제1전극과, 접촉 영역 및 접촉층에 제공된 제2전극을 구비한 단결정 반도체를 포함하여 전자기 방사선을 발생시키기 위한 반도체장치에 있어서, 상기 접촉 영역으로 부터 어떤 거리에 위치하여 이온 충돌에 의해 얻을 수 있는 비결정 구조를 갖는 고저항성 영역이 상기 표면으로부터 최소한 접촉층 및 공핍층을 통해 확장되는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서. 상기 고저항성 영역에 의해 점유되지 않은 표면의 일부가 접촉 영역의 표면 보다 두배 더 크게 되고, 60,000㎛2보다 작게되고, 접촉 영역과 고저항성 영역 사이의 거리가 특히 구조 전체를 통해 동일하게 되어 있는 것을 특징으로 하는 반도체 장치.
  3. 제1항 또는 제2항에 있어서, 상기 고저항성 영역은 양자 충돌에 의해 얻어진 영역인 것을 특징으로 하는 반도체 장치.
  4. 제1항 내지 제3항중 어느 한항에 있어서, 상기 표면과 평행인 반도체의 가장 작은 치수는 최소한 300㎛인 것을 특징으로 하는 반도체 장치.
  5. 제1항 내지 제4항중 어느 한항에 있어서, 상기 반도체는 이 반도체와 함께 증착된 층 구조와 함께 제1전도형의 제1반도체 재료의 기판으로 구성되고, 제1전도형이면서 제1반도체 재료의 버퍼층과, 제2반도체 재료의 활성층과, 제2전도형의 제1반도체 재료인 버퍼층과, 제1전도형의 제2반도체 재료인 공핍층 및 제2전도형의 제2반도체 재료인 접촉층으로 되어 있으며, 상기 고거항성 영역은 상기 표면으로 부터 접촉 영역의 깊이 보다 더 큰 깊이로 확장하는 것을 특징으로 하는 반도체 장치.
  6. 제5항에 있어서, 상기 제 1반도체 재료는 InP이고, 제2반도체 재료는 InGaAsP인 것을 특징으로 하는 반도체 장치.
  7. 제5항 또는 제6항에 있어서, 상기 접촉 영역은, 아연으로 확산된 영역인 것을 특징으로 하는 반도체 장치.
  8. 선행항 중 어느 한항에 있어서, 상기 방사선은 상기 기판의 주 표면을 통해 기판 측면상에 방사하는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890017211A 1988-11-29 1989-11-27 반도체 장치 KR900008704A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8802936A NL8802936A (nl) 1988-11-29 1988-11-29 Electroluminescerende diode met lage capaciteit.
NL8802936 1988-11-29

Publications (1)

Publication Number Publication Date
KR900008704A true KR900008704A (ko) 1990-06-04

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Application Number Title Priority Date Filing Date
KR1019890017211A KR900008704A (ko) 1988-11-29 1989-11-27 반도체 장치

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US (1) US5105234A (ko)
EP (1) EP0371554A1 (ko)
JP (1) JP2847118B2 (ko)
KR (1) KR900008704A (ko)
NL (1) NL8802936A (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100446465B1 (ko) * 2001-07-07 2004-09-01 (주) 지지테크-텍스 천연질감의 인조피혁 제조방법 및 그에 의해 제조된인조피혁
KR100448698B1 (ko) * 2001-07-06 2004-09-16 씨엔이티 주식회사 인조피혁의 제조방법
KR100516270B1 (ko) * 2002-08-07 2005-09-20 (주)대우인터내셔널 합성피혁원단제조방법및이에의해제조되는원단을이용한폴리우레탄합성피혁제조방법

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Publication number Priority date Publication date Assignee Title
DE4338187A1 (de) * 1993-11-09 1995-05-11 Telefunken Microelectron Lichtemittierendes Halbleiterbauelement
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
WO2004025702A2 (en) * 2002-09-11 2004-03-25 Pan Jit Americas, Inc Electrostatic discharge protection device for high speed transmission lines

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US4340967A (en) * 1980-06-02 1982-07-20 Bell Telephone Laboratories, Incorporated Semiconductor lasers with stable higher-order modes parallel to the junction plane
JPS57143888A (en) * 1981-02-27 1982-09-06 Nec Corp Electrode structure of semiconductor light emitting device
FR2502847A1 (fr) * 1981-03-25 1982-10-01 Western Electric Co Dispositif emetteur de lumiere a semi-conducteurs comportant une structure de canalisation du courant
JPS604278A (ja) * 1983-06-22 1985-01-10 Nec Corp 発光ダイオ−ド
JPS60153185A (ja) * 1984-01-20 1985-08-12 Nec Corp 発光ダイオ−ド
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JPH0815226B2 (ja) * 1985-09-04 1996-02-14 株式会社日立製作所 半導体レ−ザ素子
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JPS63252496A (ja) * 1987-04-09 1988-10-19 Furukawa Electric Co Ltd:The 半導体レ−ザ素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100448698B1 (ko) * 2001-07-06 2004-09-16 씨엔이티 주식회사 인조피혁의 제조방법
KR100446465B1 (ko) * 2001-07-07 2004-09-01 (주) 지지테크-텍스 천연질감의 인조피혁 제조방법 및 그에 의해 제조된인조피혁
KR100516270B1 (ko) * 2002-08-07 2005-09-20 (주)대우인터내셔널 합성피혁원단제조방법및이에의해제조되는원단을이용한폴리우레탄합성피혁제조방법

Also Published As

Publication number Publication date
JP2847118B2 (ja) 1999-01-13
EP0371554A1 (en) 1990-06-06
US5105234A (en) 1992-04-14
NL8802936A (nl) 1990-06-18
JPH02184093A (ja) 1990-07-18

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