KR850002674A - Ic제조를 위한 프라스마 처리장치 - Google Patents

Ic제조를 위한 프라스마 처리장치 Download PDF

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KR850002674A
KR850002674A KR1019840005891A KR840005891A KR850002674A KR 850002674 A KR850002674 A KR 850002674A KR 1019840005891 A KR1019840005891 A KR 1019840005891A KR 840005891 A KR840005891 A KR 840005891A KR 850002674 A KR850002674 A KR 850002674A
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wafer
etching gas
gate valve
bottom plate
gas
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기사 도시마사
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야마모도 다꾸마
후지쑤 가부시끼 가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음

Description

IC제조를 위한 프라스마 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 플라스마 처리방법 원리를 도식적으로 보여주는 도면, 제2도는 본 발명에 의한 플라스마 처리방법의 원리의 바닥판 꼭대기의 평면도, 제3도는 본 발명에서 또다른 원리에 의한 플라스마 처리방법으로서 히터를 갖는 바닥면의 부분적인 측면도, 제4도는 본 발명의 플라스마 처리방법의 또다른 원리로서 기체구멍의 부분적인 측면도.

Claims (9)

  1. 웨이퍼를 가공장소에 놓고 상기 웨이퍼를 띄우며, 동시에 상기 웨이퍼의 아래쪽을 에칭하기 위하여 상기 웨이퍼의 아래쪽으로부터 에칭가스를 불어넣는 단계로 구성되는 웨이퍼의 에칭공정을 행하는 처리방법.
  2. 청구범위 제1항에 있어서 상기 에칭가스가 특정온도로 히터에 의하여 가열되는 웨이퍼 처리방법.
  3. 웨이퍼가 처리되어지는 밀폐된 반응용기와, 상기 웨이퍼가 아래쪽으로 처리되어지는 표면을 유지하도록 놓여지는 다수의 구멍을 갖는 바닥판과 웨이퍼를 띄우며, 상기 에칭가스에 의하여 상기 웨이퍼의 아래쪽으로 에칭시키는 상기 구멍으로부터 에칭가스를 불어내는 방법으로 구성되는 상기 반응실로 구성되는 웨이퍼 처리장치.
  4. 청구범위 제3항에 있어서 상기 구멍이 상기 바닥판에 대하여 특정한 방향으로 경사져 있으며, 상기 웨이퍼가 상기 구멍으로부터 불어나온 상기 에칭가스에 의하여 특정한 방향으로 이동하며, 동시에 에칭되는 웨이퍼 처리장치.
  5. 청구범위 제3항에 있어서 상기 구멍이 바닥판의 중심주의 둘레의 원을 따라 있으며, 원주위의 특정 방향으로 상기 바닥판에 대하여 경사지고, 상기 웨이퍼가 상기 구멍으로부터 불어나오는 상기 에칭가스에 의하여 상기 특정한 방향으로 회전하며, 동시에 에칭되는 웨이퍼 처리장치.
  6. 청구범위 제3항에 있어서 바닥판이 상기 에칭가스를 가열시키기 위한 가열방법과 특정온도로 상기 개스온도를 유지시키는 상기 가열방법을 조절하기 위한 온도조절기로 구성되는 웨이퍼 처리장치.
  7. 청구범위 제3,4,5,6항에 있어서 상기 에칭가스는 플라스마로 활성화된 에칭개스인 웨이퍼 처리장치.
  8. 청구범위 제3항에 있어서 상기 에칭가스를 준비하는 에칭개스원, 플라스마로 활성화된 에칭개스를 형성시키는 상기 개스원으로부터 공급받아 상기 에칭개스의 플라스마를 발생시키기 위한 플라스마 발생영역, 플라스마 발생영역에 마이크로 웨이브를 공급시키기 위한 마이크로 웨이브 발생기, 상기 반응용기에 플라스마로 활성화된 에칭개스를 전달하는 방법 그리고 특정한 압력에서 반응용기의 가스를 배출하는 펌프장치로 구성되는 웨이퍼 처리장치.
  9. 청구범위 제8항에 있어서 입구게이트 밸브와 슬리트(slit) 게이트 밸브사이의 공간에 의하여 구성된 밀폐공간이 있는 로드록(load lock)공간과, 상기 로드록 공간을 통하여 외부공간과 반응실 사이의 전달을 제공하는 상기 입구게이트 밸브와 슬리트 게이트 밸브, 상기 로드록 공간을 연결하는 공간의 것과 같은 압력을 가지며, 같은 개스로 다시 채우고, 상기 로드록 공간을 비우는 압력장치, 콘베어 벨트로부터 상기 웨이퍼를 집어 올리며, 그것을 뒤집고 상기 입구게이트 밸브를 통하여 상기 슬리트 게이트 밸브의 스테이지위에 그것을 놓거나, 상기 입구게이트 밸브를 통하여 슬리트 게이트 밸브의 스테이지로부터 상기 웨이퍼를 집어올리고, 그것을 뒤집고, 그것을 콘베어 밸트위에 놓는 리버스 시스템(reverse sysem), 상기 입구게이트 밸브를 열거나 닫기 위한 개폐장치, 상기 로드록 공간을 열거나 닫기 위하여 상기 슬리트 게이트 밸브를 이동시키기 위한 상하운동장치, 상기 슬리트 게이트 밸브의 스테이지로부터 반응실의 상기 바닥판으로 또는 역으로 상기 웨이퍼를 전달하는 암(arm)을 회전시키기 위한 상기 웨이퍼를 집어올리는 칙(chuck)을 갖는 회전장치로 구성되는 웨이퍼 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840005891A 1983-09-30 1984-09-25 Ic 제조를 위한 플라스마 처리장치 KR890004571B1 (ko)

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JP58-182009 1983-09-30
JP58182009A JPS6074626A (ja) 1983-09-30 1983-09-30 ウエハー処理方法及び装置

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KR850002674A true KR850002674A (ko) 1985-05-15
KR890004571B1 KR890004571B1 (ko) 1989-11-15

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US (1) US4738748A (ko)
EP (1) EP0140755B1 (ko)
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KR101025231B1 (ko) * 2007-01-30 2011-04-01 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 전면 가스 정화와 함께 웨이퍼 후면 폴리머 제거를 위한 프로세스
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US4738748A (en) 1988-04-19
JPH0358530B2 (ko) 1991-09-05
EP0140755B1 (en) 1991-09-25
KR890004571B1 (ko) 1989-11-15
EP0140755A2 (en) 1985-05-08
DE3485109D1 (de) 1991-10-31
JPS6074626A (ja) 1985-04-26
EP0140755A3 (en) 1988-01-13

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