KR20230066116A - 반도체 가공용 시트 - Google Patents

반도체 가공용 시트 Download PDF

Info

Publication number
KR20230066116A
KR20230066116A KR1020237014195A KR20237014195A KR20230066116A KR 20230066116 A KR20230066116 A KR 20230066116A KR 1020237014195 A KR1020237014195 A KR 1020237014195A KR 20237014195 A KR20237014195 A KR 20237014195A KR 20230066116 A KR20230066116 A KR 20230066116A
Authority
KR
South Korea
Prior art keywords
sheet
semiconductor processing
semiconductor
substrate
mpa
Prior art date
Application number
KR1020237014195A
Other languages
English (en)
Korean (ko)
Inventor
마사토모 나카무라
나오야 사이키
요시토모 오노
Original Assignee
린텍 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 린텍 가부시키가이샤 filed Critical 린텍 가부시키가이샤
Publication of KR20230066116A publication Critical patent/KR20230066116A/ko

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • C09J7/25Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Laminated Bodies (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Weting (AREA)
  • Wire Bonding (AREA)
KR1020237014195A 2016-06-30 2017-05-12 반도체 가공용 시트 KR20230066116A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016131131 2016-06-30
JPJP-P-2016-131131 2016-06-30
PCT/JP2017/017966 WO2018003312A1 (ja) 2016-06-30 2017-05-12 半導体加工用シート
KR1020187025068A KR102528636B1 (ko) 2016-06-30 2017-05-12 반도체 가공용 시트

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020187025068A Division KR102528636B1 (ko) 2016-06-30 2017-05-12 반도체 가공용 시트

Publications (1)

Publication Number Publication Date
KR20230066116A true KR20230066116A (ko) 2023-05-12

Family

ID=60785966

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020187025068A KR102528636B1 (ko) 2016-06-30 2017-05-12 반도체 가공용 시트
KR1020237014195A KR20230066116A (ko) 2016-06-30 2017-05-12 반도체 가공용 시트

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020187025068A KR102528636B1 (ko) 2016-06-30 2017-05-12 반도체 가공용 시트

Country Status (5)

Country Link
JP (2) JPWO2018003312A1 (zh)
KR (2) KR102528636B1 (zh)
CN (1) CN109075048A (zh)
TW (2) TWI782802B (zh)
WO (1) WO2018003312A1 (zh)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7256788B2 (ja) * 2018-03-07 2023-04-12 リンテック株式会社 粘着シート
WO2019172219A1 (ja) * 2018-03-07 2019-09-12 リンテック株式会社 粘着シート
WO2019172218A1 (ja) * 2018-03-07 2019-09-12 リンテック株式会社 粘着シート
JP7134564B2 (ja) * 2018-05-14 2022-09-12 株式会社ディスコ ウェーハの加工方法
JP7139039B2 (ja) * 2018-05-14 2022-09-20 株式会社ディスコ ウェーハの加工方法
JP7139042B2 (ja) * 2018-05-14 2022-09-20 株式会社ディスコ ウェーハの加工方法
JP7139040B2 (ja) * 2018-05-14 2022-09-20 株式会社ディスコ ウェーハの加工方法
JP7134563B2 (ja) * 2018-05-14 2022-09-12 株式会社ディスコ ウェーハの加工方法
JP7139041B2 (ja) * 2018-05-14 2022-09-20 株式会社ディスコ ウェーハの加工方法
JP7139038B2 (ja) * 2018-05-14 2022-09-20 株式会社ディスコ ウェーハの加工方法
JP7134562B2 (ja) * 2018-05-14 2022-09-12 株式会社ディスコ ウェーハの加工方法
JP2019212786A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
JP2019212787A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
JP2019212817A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
JP2019212818A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
JP2019212815A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
JP7039135B2 (ja) * 2018-06-06 2022-03-22 株式会社ディスコ ウェーハの加工方法
JP2019212785A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
JP2019212788A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
JP2019212813A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
JP2019212814A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
JP7201342B2 (ja) * 2018-06-06 2023-01-10 株式会社ディスコ ウエーハの加工方法
JP2019212816A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
JP7267272B2 (ja) * 2018-06-08 2023-05-01 リンテック株式会社 硬化封止体の製造方法
JP2020009891A (ja) * 2018-07-06 2020-01-16 株式会社ディスコ ウェーハの加工方法
JP2020009890A (ja) * 2018-07-06 2020-01-16 株式会社ディスコ ウェーハの加工方法
JP2020009897A (ja) * 2018-07-06 2020-01-16 株式会社ディスコ ウェーハの加工方法
JP2020009894A (ja) * 2018-07-06 2020-01-16 株式会社ディスコ ウェーハの加工方法
JP2020009893A (ja) * 2018-07-06 2020-01-16 株式会社ディスコ ウェーハの加工方法
JP2020009895A (ja) * 2018-07-06 2020-01-16 株式会社ディスコ ウェーハの加工方法
JP7139048B2 (ja) * 2018-07-06 2022-09-20 株式会社ディスコ ウェーハの加工方法
JP2020009892A (ja) * 2018-07-06 2020-01-16 株式会社ディスコ ウェーハの加工方法
JP2020009896A (ja) * 2018-07-06 2020-01-16 株式会社ディスコ ウェーハの加工方法
KR102152459B1 (ko) * 2018-07-24 2020-09-07 한국기계연구원 마이크로 소자의 간격 조절 전사방법
JP7181020B2 (ja) * 2018-07-26 2022-11-30 株式会社ディスコ ウエーハの加工方法
JP2020024967A (ja) * 2018-08-06 2020-02-13 株式会社ディスコ ウェーハの加工方法
JP2020024970A (ja) * 2018-08-06 2020-02-13 株式会社ディスコ ウェーハの加工方法
JP2020024969A (ja) * 2018-08-06 2020-02-13 株式会社ディスコ ウェーハの加工方法
JP2020024971A (ja) * 2018-08-06 2020-02-13 株式会社ディスコ ウェーハの加工方法
JP2020043117A (ja) * 2018-09-06 2020-03-19 株式会社ディスコ ウェーハの加工方法
JP2020043143A (ja) * 2018-09-06 2020-03-19 株式会社ディスコ ウェーハの加工方法
JP2020043145A (ja) * 2018-09-06 2020-03-19 株式会社ディスコ ウェーハの加工方法
JP7154698B2 (ja) * 2018-09-06 2022-10-18 株式会社ディスコ ウェーハの加工方法
JP2020043144A (ja) * 2018-09-06 2020-03-19 株式会社ディスコ ウェーハの加工方法
JP7175568B2 (ja) * 2018-10-17 2022-11-21 株式会社ディスコ ウェーハの加工方法
JP7166722B2 (ja) * 2018-10-17 2022-11-08 株式会社ディスコ ウェーハの加工方法
JP7175569B2 (ja) * 2018-10-17 2022-11-21 株式会社ディスコ ウェーハの加工方法
JP7166723B2 (ja) * 2018-10-17 2022-11-08 株式会社ディスコ ウェーハの加工方法
JP7175570B2 (ja) * 2018-10-17 2022-11-21 株式会社ディスコ ウェーハの加工方法
JP7166721B2 (ja) * 2018-10-17 2022-11-08 株式会社ディスコ ウェーハの加工方法
KR102123419B1 (ko) * 2018-10-29 2020-06-17 한국기계연구원 소자 간격 제어가 가능한 시트 및 이를 이용한 소자 간격 제어방법
CN111128982B (zh) * 2018-10-30 2021-08-24 联嘉光电股份有限公司 扇出型晶圆级发光二极管封装方法及其结构
JP7199786B2 (ja) * 2018-11-06 2023-01-06 株式会社ディスコ ウェーハの加工方法
JP7438990B2 (ja) 2019-01-31 2024-02-27 リンテック株式会社 エキスパンド方法及び半導体装置の製造方法
JPWO2020158770A1 (ja) * 2019-01-31 2021-12-02 リンテック株式会社 エキスパンド方法及び半導体装置の製造方法
JP7305260B2 (ja) * 2019-03-05 2023-07-10 株式会社ディスコ ウェーハの加工方法
JP7305261B2 (ja) * 2019-03-05 2023-07-10 株式会社ディスコ ウェーハの加工方法
JP7305259B2 (ja) * 2019-03-05 2023-07-10 株式会社ディスコ ウェーハの加工方法
CN210607192U (zh) * 2019-03-26 2020-05-22 Pep创新私人有限公司 面板组件、晶圆封装体以及芯片封装体
CN110098131A (zh) * 2019-04-18 2019-08-06 电子科技大学 一种功率mos型器件与集成电路晶圆级重构封装方法
JP7334063B2 (ja) * 2019-05-24 2023-08-28 株式会社ディスコ モールドチップの製造方法
JP2021024949A (ja) * 2019-08-05 2021-02-22 日東電工株式会社 粘着シート
JP2021024950A (ja) * 2019-08-05 2021-02-22 日東電工株式会社 粘着シート
KR20220080093A (ko) * 2019-10-04 2022-06-14 린텍 가부시키가이샤 점착 시트
JP2021119592A (ja) * 2020-01-30 2021-08-12 リンテック株式会社 ワーク加工用シートおよび加工済みワークの製造方法
WO2021200786A1 (ja) * 2020-03-30 2021-10-07 リンテック株式会社 粘着シート
CN112687767B9 (zh) * 2020-12-01 2021-12-03 华灿光电(苏州)有限公司 芯片扩膜方法
CN113571461A (zh) * 2021-07-02 2021-10-29 矽磐微电子(重庆)有限公司 芯片封装结构的形成方法
WO2023047592A1 (ja) * 2021-09-27 2023-03-30 株式会社レゾナック 半導体装置の製造方法
WO2024024852A1 (ja) * 2022-07-29 2024-02-01 株式会社レゾナック 半導体装置の製造方法及びエキスパンドテープ
TWI820938B (zh) * 2022-09-29 2023-11-01 強茂股份有限公司 晶粒吸取輔助裝置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058646A1 (ja) 2008-11-21 2010-05-27 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体パッケージおよびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1530994A (en) * 1974-10-08 1978-11-01 Raychem Ltd Composite structures of heat-recoverable articles
US4536445A (en) * 1981-12-28 1985-08-20 Raychem Corporation Elastomer based adhesive compositions
JPH068403B2 (ja) * 1985-11-21 1994-02-02 三井石油化学工業株式会社 ウエハダイシング用接着シ−ト
JP4540150B2 (ja) * 1998-09-30 2010-09-08 日東電工株式会社 熱剥離型粘着シート
JP2003137350A (ja) 2001-11-02 2003-05-14 Kondo Machinery Co 包装体とそれを使用した包装用容器及び包装体を備えた構造体
JP2005322858A (ja) * 2004-05-11 2005-11-17 Shinko Electric Ind Co Ltd 半導体装置の製造方法
JP2006095185A (ja) 2004-09-30 2006-04-13 Seed Co Ltd 香気成分持続揮散性シート、それを用いた匂い袋及び虫除け袋
JP2006173190A (ja) 2004-12-13 2006-06-29 Hitachi Chem Co Ltd 半導体装置の製造方法及びicチップ配列用支持材
JP5140910B2 (ja) * 2005-08-30 2013-02-13 住友ベークライト株式会社 フィルム基材および半導体ウエハ加工用粘着テープ
JP4256866B2 (ja) 2005-09-01 2009-04-22 ポリマテック株式会社 キーシート及びキーシートの製造方法
JP5009659B2 (ja) * 2007-03-23 2012-08-22 リンテック株式会社 ダイシングシートおよびチップ体の製造方法
JP5059559B2 (ja) * 2006-12-05 2012-10-24 リンテック株式会社 レーザーダイシングシートおよびチップ体の製造方法
JP5414462B2 (ja) * 2009-10-30 2014-02-12 シチズン電子株式会社 半導体素子の製造方法
JP5027321B2 (ja) * 2010-09-24 2012-09-19 古河電気工業株式会社 半導体加工用テープ
JP2011119767A (ja) * 2011-03-07 2011-06-16 Sony Chemical & Information Device Corp ウエハのダイシング方法、実装方法、接着剤層付きチップの製造方法、実装体
KR101604822B1 (ko) * 2013-07-24 2016-03-18 주식회사 엘지화학 반도체 웨이퍼 다이싱 필름, 및 다이싱 다이본딩 필름
JP2016062986A (ja) * 2014-09-16 2016-04-25 株式会社東芝 半導体装置と半導体装置の製造方法
KR101648313B1 (ko) * 2014-11-01 2016-08-16 삼성에스디아이 주식회사 점착제 조성물, 이로부터 형성된 점착필름 및 이를 포함하는 디스플레이 부재

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058646A1 (ja) 2008-11-21 2010-05-27 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体パッケージおよびその製造方法

Also Published As

Publication number Publication date
KR102528636B1 (ko) 2023-05-03
TW201803042A (zh) 2018-01-16
JP2022058712A (ja) 2022-04-12
KR20190022444A (ko) 2019-03-06
JPWO2018003312A1 (ja) 2019-04-18
JP7336548B2 (ja) 2023-08-31
CN109075048A (zh) 2018-12-21
TWI782802B (zh) 2022-11-01
TW202211394A (zh) 2022-03-16
WO2018003312A1 (ja) 2018-01-04
TWI750171B (zh) 2021-12-21

Similar Documents

Publication Publication Date Title
KR102528636B1 (ko) 반도체 가공용 시트
JP7256788B2 (ja) 粘着シート
JP7256787B2 (ja) 粘着シート
JP7256786B2 (ja) 粘着シート
JP7267990B2 (ja) エキスパンド方法、半導体装置の製造方法、及び粘着シート
WO2021065073A1 (ja) 粘着シート
TWI838454B (zh) 擴展方法及半導體裝置之製造方法
WO2020158767A1 (ja) エキスパンド方法及び半導体装置の製造方法
TWI837291B (zh) 擴展方法及半導體裝置之製造方法
WO2020158770A1 (ja) エキスパンド方法及び半導体装置の製造方法
WO2022201788A1 (ja) 半導体加工用粘着テープおよび半導体装置の製造方法
WO2022201789A1 (ja) 半導体加工用粘着テープおよび半導体装置の製造方法

Legal Events

Date Code Title Description
A107 Divisional application of patent
E902 Notification of reason for refusal