KR102528636B1 - 반도체 가공용 시트 - Google Patents

반도체 가공용 시트 Download PDF

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Publication number
KR102528636B1
KR102528636B1 KR1020187025068A KR20187025068A KR102528636B1 KR 102528636 B1 KR102528636 B1 KR 102528636B1 KR 1020187025068 A KR1020187025068 A KR 1020187025068A KR 20187025068 A KR20187025068 A KR 20187025068A KR 102528636 B1 KR102528636 B1 KR 102528636B1
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South Korea
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sheet
semiconductor processing
semiconductor
length
grippers
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KR1020187025068A
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English (en)
Korean (ko)
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KR20190022444A (ko
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마사토모 나카무라
나오야 사이키
요시토모 오노
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린텍 가부시키가이샤
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Priority to KR1020237014195A priority Critical patent/KR20230066116A/ko
Publication of KR20190022444A publication Critical patent/KR20190022444A/ko
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Publication of KR102528636B1 publication Critical patent/KR102528636B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laminated Bodies (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Weting (AREA)
  • Wire Bonding (AREA)
KR1020187025068A 2016-06-30 2017-05-12 반도체 가공용 시트 KR102528636B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237014195A KR20230066116A (ko) 2016-06-30 2017-05-12 반도체 가공용 시트

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2016-131131 2016-06-30
JP2016131131 2016-06-30
PCT/JP2017/017966 WO2018003312A1 (ja) 2016-06-30 2017-05-12 半導体加工用シート

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020237014195A Division KR20230066116A (ko) 2016-06-30 2017-05-12 반도체 가공용 시트

Publications (2)

Publication Number Publication Date
KR20190022444A KR20190022444A (ko) 2019-03-06
KR102528636B1 true KR102528636B1 (ko) 2023-05-03

Family

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Family Applications (2)

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KR1020237014195A KR20230066116A (ko) 2016-06-30 2017-05-12 반도체 가공용 시트
KR1020187025068A KR102528636B1 (ko) 2016-06-30 2017-05-12 반도체 가공용 시트

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Country Status (5)

Country Link
JP (2) JPWO2018003312A1 (zh)
KR (2) KR20230066116A (zh)
CN (1) CN109075048A (zh)
TW (2) TWI750171B (zh)
WO (1) WO2018003312A1 (zh)

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003137350A (ja) 2001-11-02 2003-05-14 Kondo Machinery Co 包装体とそれを使用した包装用容器及び包装体を備えた構造体
JP2005322858A (ja) * 2004-05-11 2005-11-17 Shinko Electric Ind Co Ltd 半導体装置の製造方法
JP2006095185A (ja) 2004-09-30 2006-04-13 Seed Co Ltd 香気成分持続揮散性シート、それを用いた匂い袋及び虫除け袋
JP2006173190A (ja) 2004-12-13 2006-06-29 Hitachi Chem Co Ltd 半導体装置の製造方法及びｉｃチップ配列用支持材
JP2007063340A (ja) * 2005-08-30 2007-03-15 Sumitomo Bakelite Co Ltd フィルム基材および半導体ウエハ加工用粘着テープ
JP2007066818A (ja) 2005-09-01 2007-03-15 Polymatech Co Ltd キーシート及びキーシートの製造方法
JP2008166728A (ja) * 2006-12-05 2008-07-17 Lintec Corp レーザーダイシングシートおよびチップ体の製造方法
JP2008243858A (ja) * 2007-03-23 2008-10-09 Lintec Corp ダイシングシートおよびチップ体の製造方法
JP2016062986A (ja) 2014-09-16 2016-04-25 株式会社東芝 半導体装置と半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1530994A (en) * 1974-10-08 1978-11-01 Raychem Ltd Composite structures of heat-recoverable articles
US4536445A (en) * 1981-12-28 1985-08-20 Raychem Corporation Elastomer based adhesive compositions
JPH068403B2 (ja) * 1985-11-21 1994-02-02 三井石油化学工業株式会社 ウエハダイシング用接着シ−ト
JP4540150B2 (ja) 1998-09-30 2010-09-08 日東電工株式会社 熱剥離型粘着シート
WO2010058646A1 (ja) 2008-11-21 2010-05-27 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体パッケージおよびその製造方法
JP5414462B2 (ja) * 2009-10-30 2014-02-12 シチズン電子株式会社 半導体素子の製造方法
JP5027321B2 (ja) * 2010-09-24 2012-09-19 古河電気工業株式会社 半導体加工用テープ
JP2011119767A (ja) * 2011-03-07 2011-06-16 Sony Chemical & Information Device Corp ウエハのダイシング方法、実装方法、接着剤層付きチップの製造方法、実装体
KR101604822B1 (ko) * 2013-07-24 2016-03-18 주식회사 엘지화학 반도체 웨이퍼 다이싱 필름, 및 다이싱 다이본딩 필름
KR101648313B1 (ko) * 2014-11-01 2016-08-16 삼성에스디아이 주식회사 점착제 조성물, 이로부터 형성된 점착필름 및 이를 포함하는 디스플레이 부재

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003137350A (ja) 2001-11-02 2003-05-14 Kondo Machinery Co 包装体とそれを使用した包装用容器及び包装体を備えた構造体
JP2005322858A (ja) * 2004-05-11 2005-11-17 Shinko Electric Ind Co Ltd 半導体装置の製造方法
JP2006095185A (ja) 2004-09-30 2006-04-13 Seed Co Ltd 香気成分持続揮散性シート、それを用いた匂い袋及び虫除け袋
JP2006173190A (ja) 2004-12-13 2006-06-29 Hitachi Chem Co Ltd 半導体装置の製造方法及びｉｃチップ配列用支持材
JP2007063340A (ja) * 2005-08-30 2007-03-15 Sumitomo Bakelite Co Ltd フィルム基材および半導体ウエハ加工用粘着テープ
JP2007066818A (ja) 2005-09-01 2007-03-15 Polymatech Co Ltd キーシート及びキーシートの製造方法
JP2008166728A (ja) * 2006-12-05 2008-07-17 Lintec Corp レーザーダイシングシートおよびチップ体の製造方法
JP2008243858A (ja) * 2007-03-23 2008-10-09 Lintec Corp ダイシングシートおよびチップ体の製造方法
JP2016062986A (ja) 2014-09-16 2016-04-25 株式会社東芝 半導体装置と半導体装置の製造方法

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