KR20170100611A - 비방사 측벽 재결합 감소를 위한 led 구조체 - Google Patents

비방사 측벽 재결합 감소를 위한 led 구조체 Download PDF

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Publication number
KR20170100611A
KR20170100611A KR1020177020694A KR20177020694A KR20170100611A KR 20170100611 A KR20170100611 A KR 20170100611A KR 1020177020694 A KR1020177020694 A KR 1020177020694A KR 20177020694 A KR20177020694 A KR 20177020694A KR 20170100611 A KR20170100611 A KR 20170100611A
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South Korea
Prior art keywords
layer
led
diode
light emitting
emitting diode
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Korean (ko)
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데이비드 피. 보어
켈리 맥그로디
다니엘 아서 헤이거
제임스 마이클 퍼킨스
아르판 차크라보르티
장-자크 피. 드롤레
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애플 인크.
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Priority to KR1020217018569A priority Critical patent/KR102380538B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H01L33/14—
    • H01L33/0008—
    • H01L33/0075—
    • H01L33/06—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

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  • Led Device Packages (AREA)
KR1020177020694A 2015-01-06 2015-12-07 비방사 측벽 재결합 감소를 위한 led 구조체 Ceased KR20170100611A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217018569A KR102380538B1 (ko) 2015-01-06 2015-12-07 비방사 측벽 재결합 감소를 위한 led 구조체

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562100348P 2015-01-06 2015-01-06
US62/100,348 2015-01-06
US14/853,614 US9484492B2 (en) 2015-01-06 2015-09-14 LED structures for reduced non-radiative sidewall recombination
US14/853,614 2015-09-14
PCT/US2015/064295 WO2016111789A1 (en) 2015-01-06 2015-12-07 Led structures for reduced non-radiative sidewall recombination

Related Child Applications (2)

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KR1020217018569A Division KR102380538B1 (ko) 2015-01-06 2015-12-07 비방사 측벽 재결합 감소를 위한 led 구조체
KR1020197027276A Division KR20190109586A (ko) 2015-01-06 2015-12-07 비방사 측벽 재결합 감소를 위한 led 구조체

Publications (1)

Publication Number Publication Date
KR20170100611A true KR20170100611A (ko) 2017-09-04

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KR1020197027276A Withdrawn KR20190109586A (ko) 2015-01-06 2015-12-07 비방사 측벽 재결합 감소를 위한 led 구조체
KR1020177020694A Ceased KR20170100611A (ko) 2015-01-06 2015-12-07 비방사 측벽 재결합 감소를 위한 led 구조체
KR1020217018569A Active KR102380538B1 (ko) 2015-01-06 2015-12-07 비방사 측벽 재결합 감소를 위한 led 구조체

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KR1020197027276A Withdrawn KR20190109586A (ko) 2015-01-06 2015-12-07 비방사 측벽 재결합 감소를 위한 led 구조체

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Country Status (6)

Country Link
US (1) US9484492B2 (OSRAM)
EP (1) EP3243223B1 (OSRAM)
JP (2) JP2018505567A (OSRAM)
KR (3) KR20190109586A (OSRAM)
CN (1) CN107408603B (OSRAM)
WO (1) WO2016111789A1 (OSRAM)

Cited By (5)

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KR20190035319A (ko) * 2017-09-26 2019-04-03 삼성전자주식회사 발광 칩들을 포함하는 디스플레이 및 그 제조 방법
KR20200023319A (ko) * 2020-01-22 2020-03-04 엘지전자 주식회사 반도체 발광소자를 이용한 디스플레이 장치 및 이의 제조방법
KR20200029100A (ko) * 2018-09-07 2020-03-18 삼성디스플레이 주식회사 발광 소자, 그의 제조 방법, 및 발광 소자를 구비한 표시 장치
KR20220012337A (ko) * 2019-05-24 2022-02-03 플레세이 세미컨덕터스 리미티드 패시베이션 층을 포함하는 발광 다이오드 전구체
US12484347B2 (en) 2018-11-06 2025-11-25 The Regents Of The University Of California Method of forming micro-LEDs with ultra-low leakage current

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