KR20110121671A - 마스터 디바이스를 포함하는 적층형 반도체 디바이스 - Google Patents

마스터 디바이스를 포함하는 적층형 반도체 디바이스 Download PDF

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Publication number
KR20110121671A
KR20110121671A KR1020117009171A KR20117009171A KR20110121671A KR 20110121671 A KR20110121671 A KR 20110121671A KR 1020117009171 A KR1020117009171 A KR 1020117009171A KR 20117009171 A KR20117009171 A KR 20117009171A KR 20110121671 A KR20110121671 A KR 20110121671A
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South Korea
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chip
nonvolatile memory
region
memory chip
additional
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KR1020117009171A
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English (en)
Korean (ko)
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진기 김
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모사이드 테크놀로지스 인코퍼레이티드
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Publication of KR20110121671A publication Critical patent/KR20110121671A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/73265—Layer and wire connectors
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    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
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    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
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    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
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    • H01L2225/06596—Structural arrangements for testing
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020117009171A 2009-02-24 2010-02-12 마스터 디바이스를 포함하는 적층형 반도체 디바이스 Ceased KR20110121671A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15491009P 2009-02-24 2009-02-24
US61/154,910 2009-02-24
US12/429,310 2009-04-24
US12/429,310 US7894230B2 (en) 2009-02-24 2009-04-24 Stacked semiconductor devices including a master device

Publications (1)

Publication Number Publication Date
KR20110121671A true KR20110121671A (ko) 2011-11-08

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Application Number Title Priority Date Filing Date
KR1020117009171A Ceased KR20110121671A (ko) 2009-02-24 2010-02-12 마스터 디바이스를 포함하는 적층형 반도체 디바이스

Country Status (8)

Country Link
US (4) US7894230B2 (enExample)
EP (1) EP2401745A1 (enExample)
JP (2) JP2012518859A (enExample)
KR (1) KR20110121671A (enExample)
CN (2) CN104332179A (enExample)
DE (1) DE112010000880T5 (enExample)
TW (1) TW201101464A (enExample)
WO (1) WO2010096901A1 (enExample)

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KR20150087343A (ko) * 2012-11-19 2015-07-29 실리콘 스토리지 테크놀로지 인크 3차원 플래시 메모리 시스템
KR20190084854A (ko) * 2018-01-09 2019-07-17 윈본드 일렉트로닉스 코포레이션 반도체 기억장치

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KR20140008766A (ko) * 2012-07-11 2014-01-22 에스케이하이닉스 주식회사 반도체메모리장치
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