KR20090031492A - 광전 소자용 미정질 실리콘 막을 증착하기 위한 방법 및장치 - Google Patents

광전 소자용 미정질 실리콘 막을 증착하기 위한 방법 및장치 Download PDF

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Publication number
KR20090031492A
KR20090031492A KR1020077024581A KR20077024581A KR20090031492A KR 20090031492 A KR20090031492 A KR 20090031492A KR 1020077024581 A KR1020077024581 A KR 1020077024581A KR 20077024581 A KR20077024581 A KR 20077024581A KR 20090031492 A KR20090031492 A KR 20090031492A
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South Korea
Prior art keywords
gas
type semiconductor
silicon film
microcrystalline silicon
depositing
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Ceased
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KR1020077024581A
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English (en)
Korean (ko)
Inventor
최수영
타카코 타케하라
존 엠. 화이트
채용기
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20090031492A publication Critical patent/KR20090031492A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
KR1020077024581A 2006-06-23 2007-06-20 광전 소자용 미정질 실리콘 막을 증착하기 위한 방법 및장치 Ceased KR20090031492A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/426,127 2006-06-23
US11/426,127 US7655542B2 (en) 2006-06-23 2006-06-23 Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device

Publications (1)

Publication Number Publication Date
KR20090031492A true KR20090031492A (ko) 2009-03-26

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KR1020077024581A Ceased KR20090031492A (ko) 2006-06-23 2007-06-20 광전 소자용 미정질 실리콘 막을 증착하기 위한 방법 및장치

Country Status (7)

Country Link
US (3) US7655542B2 (https=)
EP (1) EP2041797A4 (https=)
JP (1) JP2009542008A (https=)
KR (1) KR20090031492A (https=)
CN (1) CN101322251B (https=)
TW (1) TW200810138A (https=)
WO (1) WO2007149945A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101302373B1 (ko) * 2011-12-21 2013-09-06 주식회사 테스 태양전지 제조방법

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
KR101087351B1 (ko) * 2006-12-25 2011-11-25 샤프 가부시키가이샤 광전변환 장치 및 그 제조 방법
US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US7968792B2 (en) * 2007-03-05 2011-06-28 Seagate Technology Llc Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same
US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
US20080302303A1 (en) * 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US7875486B2 (en) 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
TW200905730A (en) * 2007-07-23 2009-02-01 Ind Tech Res Inst Method for forming a microcrystalline silicon film
JP4488039B2 (ja) * 2007-07-25 2010-06-23 ソニー株式会社 薄膜半導体装置の製造方法
US9054206B2 (en) * 2007-08-17 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
US7687300B2 (en) * 2007-10-22 2010-03-30 Applied Materials, Inc. Method of dynamic temperature control during microcrystalline SI growth
WO2009059238A1 (en) 2007-11-02 2009-05-07 Applied Materials, Inc. Plasma treatment between deposition processes
US7833885B2 (en) 2008-02-11 2010-11-16 Applied Materials, Inc. Microcrystalline silicon thin film transistor
US8076222B2 (en) * 2008-02-11 2011-12-13 Applied Materials, Inc. Microcrystalline silicon thin film transistor
US20090238972A1 (en) * 2008-03-24 2009-09-24 Applied Materials, Inc. Methods and apparatus for using reduced purity silane to deposit silicon
CA2716191A1 (en) * 2008-03-26 2009-10-01 E. I. Du Pont De Nemours And Company High performance anti-spall laminate article
US20090250100A1 (en) * 2008-04-04 2009-10-08 E.I. Du Pont De Nemours And Company Solar cell modules comprising high melt flow poly(vinyl butyral) encapsulants
US7947523B2 (en) * 2008-04-25 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
US20090288701A1 (en) * 2008-05-23 2009-11-26 E.I.Du Pont De Nemours And Company Solar cell laminates having colored multi-layer encapsulant sheets
WO2009149000A2 (en) 2008-06-02 2009-12-10 E. I. Du Pont De Nemours And Company Solar cell module having a low haze encapsulant layer
US7955890B2 (en) 2008-06-24 2011-06-07 Applied Materials, Inc. Methods for forming an amorphous silicon film in display devices
WO2010024814A1 (en) * 2008-08-28 2010-03-04 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
TWI475708B (zh) * 2008-09-01 2015-03-01 Applied Materials Inc 利用流量梯度設計以沉積均勻矽膜之方法與設備
KR101507967B1 (ko) * 2008-09-23 2015-04-03 삼성디스플레이 주식회사 비정질 실리콘층 형성 방법 및 이를 이용한 액정표시장치 제조 방법
US20100101647A1 (en) * 2008-10-24 2010-04-29 E.I. Du Pont De Nemours And Company Non-autoclave lamination process for manufacturing solar cell modules
EP2342209A1 (en) 2008-10-31 2011-07-13 E. I. du Pont de Nemours and Company Solar cells modules comprising low haze encapsulants
US8080727B2 (en) 2008-11-24 2011-12-20 E. I. Du Pont De Nemours And Company Solar cell modules comprising an encapsulant sheet of a blend of ethylene copolymers
US8084129B2 (en) * 2008-11-24 2011-12-27 E. I. Du Pont De Nemours And Company Laminated articles comprising a sheet of a blend of ethylene copolymers
US20100136261A1 (en) * 2008-12-03 2010-06-03 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
DE102008063737A1 (de) * 2008-12-18 2010-06-24 Forschungszentrum Jülich GmbH Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat
US20100154867A1 (en) * 2008-12-19 2010-06-24 E. I. Du Pont De Nemours And Company Mechanically reliable solar cell modules
KR101022822B1 (ko) * 2008-12-31 2011-03-17 한국철강 주식회사 광기전력 장치의 제조 방법
KR101629532B1 (ko) * 2008-12-31 2016-06-13 이 아이 듀폰 디 네모아 앤드 캄파니 낮은 탁도 및 높은 내습성을 갖는 봉지제 시트를 포함하는 태양 전지 모듈
EP2380207A4 (en) * 2009-01-22 2012-07-11 Du Pont POLY (VINYL BUTYRAL) -APPLICATION FUEL WITH CHELATINES FOR SOLAR CELL MODULES
DE102009025428A1 (de) * 2009-06-16 2010-12-23 Schott Solar Ag Dünnschichtsolarzelle und Verfahren zur Herstellung
WO2011011301A2 (en) * 2009-07-23 2011-01-27 Applied Materials, Inc. A mixed silicon phase film for high efficiency thin film silicon solar cells
CN102859863A (zh) * 2009-07-31 2013-01-02 纳幕尔杜邦公司 用于光伏电池的可交联包封材料
US8026157B2 (en) * 2009-09-02 2011-09-27 Applied Materials, Inc. Gas mixing method realized by back diffusion in a PECVD system with showerhead
US8535760B2 (en) 2009-09-11 2013-09-17 Air Products And Chemicals, Inc. Additives to silane for thin film silicon photovoltaic devices
WO2011046664A2 (en) * 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
US20110126875A1 (en) * 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
TW201120942A (en) * 2009-12-08 2011-06-16 Ind Tech Res Inst Method for depositing microcrystalline silicon and monitor device of a plasma enhanced deposition
TWI401812B (zh) * 2009-12-31 2013-07-11 Metal Ind Res Anddevelopment Ct Solar battery
US20130000728A1 (en) * 2010-03-18 2013-01-03 Fuji Electric Co., Ltd. Photovoltaic cell and manufacturing method thereof
US20110275200A1 (en) * 2010-05-06 2011-11-10 Applied Materials, Inc. Methods of dynamically controlling film microstructure formed in a microcrystalline layer
US8916425B2 (en) * 2010-07-26 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
US8609980B2 (en) 2010-07-30 2013-12-17 E I Du Pont De Nemours And Company Cross-linkable ionomeric encapsulants for photovoltaic cells
US20120202316A1 (en) * 2011-02-03 2012-08-09 Applied Materials, Inc. Plasma treatment of tco layers for silicon thin film photovoltaic devices
US20120318335A1 (en) * 2011-06-15 2012-12-20 International Business Machines Corporation Tandem solar cell with improved tunnel junction
WO2013009505A2 (en) 2011-07-13 2013-01-17 Applied Materials, Inc. Methods of manufacturing thin film transistor devices
KR101912888B1 (ko) 2011-10-07 2018-12-28 어플라이드 머티어리얼스, 인코포레이티드 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들
CN102790133B (zh) * 2012-08-16 2015-06-10 青海天普太阳能科技有限公司 一种多步生长法制备微晶硅薄膜的方法
TWI474499B (zh) * 2012-10-12 2015-02-21 Iner Aec Executive Yuan Microcrystalline silicon thin film solar cell element and its manufacturing method
RU2536775C2 (ru) * 2012-11-14 2014-12-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Способ получения пленок аморфного кремния, содержащего нанокристаллические включения
WO2014100309A1 (en) 2012-12-19 2014-06-26 E. I. Du Pont De Nemours And Company Cross-linkable acid copolymer composition and its use in glass laminates
WO2015171575A1 (en) 2014-05-09 2015-11-12 E. I. Du Pont De Nemours And Company Encapsulant composition comprising a copolymer of ethylene, vinyl acetate and a third comonomer
CN104152864B (zh) * 2014-08-22 2016-11-16 中国科学院宁波材料技术与工程研究所 硅薄膜的制备方法
US9559245B2 (en) 2015-03-23 2017-01-31 Sunpower Corporation Blister-free polycrystalline silicon for solar cells
ES2943469T3 (es) 2018-03-08 2023-06-13 Dow Global Technologies Llc Módulo fotovoltaico y composición encapsulante que tienen resistencia mejorada a la degradación inducida por potencial
US20220102567A1 (en) * 2019-02-06 2022-03-31 First Solar, Inc. Metal oxynitride back contact layers for photovoltaic devices

Family Cites Families (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US733226A (en) * 1902-08-09 1903-07-07 Jesse Lines Scale.
US4063735A (en) 1976-03-15 1977-12-20 Wendel Dan P CB Radio highway board game apparatus
US4068043A (en) 1977-03-11 1978-01-10 Energy Development Associates Pump battery system
US4490573A (en) 1979-12-26 1984-12-25 Sera Solar Corporation Solar cells
US4400577A (en) 1981-07-16 1983-08-23 Spear Reginald G Thin solar cells
JPS59108370A (ja) 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 光起電力装置
US4471156A (en) * 1983-01-27 1984-09-11 Aluminum Company Of America Damping spacer with variable damping feature
US4471155A (en) 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
US4878097A (en) 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
JPS6249672A (ja) 1985-08-29 1987-03-04 Sumitomo Electric Ind Ltd アモルフアス光起電力素子
CA1321660C (en) 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
US4755475A (en) 1986-02-18 1988-07-05 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device
US4841908A (en) 1986-06-23 1989-06-27 Minnesota Mining And Manufacturing Company Multi-chamber deposition system
US4776894A (en) 1986-08-18 1988-10-11 Sanyo Electric Co., Ltd. Photovoltaic device
JP2738557B2 (ja) 1989-03-10 1998-04-08 三菱電機株式会社 多層構造太陽電池
JPH0463735A (ja) 1990-06-30 1992-02-28 Mazda Motor Corp 車両用ランプ装置
JPH0468043A (ja) 1990-07-10 1992-03-03 Mitsubishi Petrochem Co Ltd 熱可塑性樹脂組成物
JP2719230B2 (ja) 1990-11-22 1998-02-25 キヤノン株式会社 光起電力素子
US5256887A (en) 1991-07-19 1993-10-26 Solarex Corporation Photovoltaic device including a boron doping profile in an i-type layer
JP3164956B2 (ja) 1993-01-28 2001-05-14 アプライド マテリアルズ インコーポレイテッド Ｃｖｄにより大面積のガラス基板上に高堆積速度でアモルファスシリコン薄膜を堆積する方法
AUPM483494A0 (en) 1994-03-31 1994-04-28 Pacific Solar Pty Limited Multiple layer thin film solar cells
AUPM982294A0 (en) 1994-12-02 1995-01-05 Pacific Solar Pty Limited Method of manufacturing a multilayer solar cell
US5677236A (en) 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
JPH08264815A (ja) 1995-03-23 1996-10-11 Sanyo Electric Co Ltd 非晶質シリコンカーバイド膜及びこれを用いた光起電力素子
JP3223102B2 (ja) 1995-06-05 2001-10-29 シャープ株式会社 太陽電池セルおよびその製造方法
FR2743193B1 (fr) 1996-01-02 1998-04-30 Univ Neuchatel Procede et dispositif de depot d'au moins une couche de silicium hydrogene microcristallin ou nanocristallin intrinseque, et cellule photovoltaique et transistor a couches minces obtenus par la mise en oeuvre de ce procede
JPH09199431A (ja) 1996-01-17 1997-07-31 Canon Inc 薄膜形成方法および薄膜形成装置
US5730808A (en) 1996-06-27 1998-03-24 Amoco/Enron Solar Producing solar cells by surface preparation for accelerated nucleation of microcrystalline silicon on heterogeneous substrates
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US5932940A (en) * 1996-07-16 1999-08-03 Massachusetts Institute Of Technology Microturbomachinery
JPH10117006A (ja) 1996-08-23 1998-05-06 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置
US6180870B1 (en) 1996-08-28 2001-01-30 Canon Kabushiki Kaisha Photovoltaic device
EP0831538A3 (en) 1996-09-19 1999-07-14 Canon Kabushiki Kaisha Photovoltaic element having a specific doped layer
FR2757141B1 (fr) * 1996-12-12 1999-03-26 Darlet Marchante Tech Sa Machine d'enroulement d'un element plat continu pour former des bobines
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
JP2005167264A (ja) * 1997-03-10 2005-06-23 Canon Inc 堆積膜形成方法、半導体素子の製造方法、及び光電変換素子の製造方法
US6121541A (en) 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
JP3792376B2 (ja) * 1997-11-10 2006-07-05 株式会社カネカ シリコン系薄膜光電変換装置
WO1999025029A1 (en) * 1997-11-10 1999-05-20 Kaneka Corporation Method of producing silicon thin-film photoelectric transducer and plasma cvd apparatus used for the method
JP3581546B2 (ja) 1997-11-27 2004-10-27 キヤノン株式会社 微結晶シリコン膜形成方法および光起電力素子の製造方法
JP4208281B2 (ja) 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
JPH11246971A (ja) 1998-03-03 1999-09-14 Canon Inc 微結晶シリコン系薄膜の作製方法及び作製装置
US6303945B1 (en) 1998-03-16 2001-10-16 Canon Kabushiki Kaisha Semiconductor element having microcrystalline semiconductor material
US8181656B2 (en) * 1998-06-10 2012-05-22 Asthmatx, Inc. Methods for treating airways
JPH11354820A (ja) 1998-06-12 1999-12-24 Sharp Corp 光電変換素子及びその製造方法
US6077722A (en) 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
WO2000013237A1 (en) 1998-08-26 2000-03-09 Nippon Sheet Glass Co., Ltd. Photovoltaic device
DE69936906T2 (de) 1998-10-12 2008-05-21 Kaneka Corp. Verfahren zur Herstellung einer siliziumhaltigen photoelektrischen Dünnschicht-Umwandlungsanordnung
US6335479B1 (en) 1998-10-13 2002-01-01 Dai Nippon Printing Co., Ltd. Protective sheet for solar battery module, method of fabricating the same and solar battery module
EP2264771A3 (en) 1998-12-03 2015-04-29 Semiconductor Energy Laboratory Co., Ltd. MOS thin film transistor and method of fabricating same
JP3364180B2 (ja) 1999-01-18 2003-01-08 三菱重工業株式会社 非晶質シリコン太陽電池
JP3046965B1 (ja) 1999-02-26 2000-05-29 鐘淵化学工業株式会社 非晶質シリコン系薄膜光電変換装置の製造方法
EP1032052B1 (en) 1999-02-26 2010-07-21 Kaneka Corporation Method of manufacturing silicon based thin film photoelectric conversion device
JP3589581B2 (ja) 1999-02-26 2004-11-17 株式会社カネカ タンデム型の薄膜光電変換装置の製造方法
IT1312150B1 (it) * 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
US6380480B1 (en) 1999-05-18 2002-04-30 Nippon Sheet Glass Co., Ltd Photoelectric conversion device and substrate for photoelectric conversion device
US6602606B1 (en) 1999-05-18 2003-08-05 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
US6472248B2 (en) 1999-07-04 2002-10-29 Canon Kabushiki Kaisha Microcrystalline series photovoltaic element and process for fabrication of same
DE19935046C2 (de) 1999-07-26 2001-07-12 Schott Glas Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung
JP4459341B2 (ja) 1999-11-19 2010-04-28 株式会社カネカ 太陽電池モジュール
JP2001267611A (ja) 2000-01-13 2001-09-28 Sharp Corp 薄膜太陽電池及びその製造方法
CN1181561C (zh) 2000-03-03 2004-12-22 松下电器产业株式会社 半导体装置
JP4124309B2 (ja) * 2000-03-30 2008-07-23 三洋電機株式会社 光起電力装置の製造方法
JP2001345272A (ja) 2000-05-31 2001-12-14 Canon Inc シリコン系薄膜の形成方法、シリコン系薄膜及び光起電力素子
JP2002057359A (ja) 2000-06-01 2002-02-22 Sharp Corp 積層型太陽電池
JP2002016006A (ja) * 2000-06-29 2002-01-18 Mitsubishi Heavy Ind Ltd 表面処理装置及び表面処理方法
US7351993B2 (en) 2000-08-08 2008-04-01 Translucent Photonics, Inc. Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
US6566159B2 (en) 2000-10-04 2003-05-20 Kaneka Corporation Method of manufacturing tandem thin-film solar cell
US6632993B2 (en) 2000-10-05 2003-10-14 Kaneka Corporation Photovoltaic module
US6548751B2 (en) 2000-12-12 2003-04-15 Solarflex Technologies, Inc. Thin film flexible solar cell
JP4229606B2 (ja) 2000-11-21 2009-02-25 日本板硝子株式会社 光電変換装置用基体およびそれを備えた光電変換装置
TWI313059B (https=) 2000-12-08 2009-08-01 Sony Corporatio
US6750394B2 (en) 2001-01-12 2004-06-15 Sharp Kabushiki Kaisha Thin-film solar cell and its manufacturing method
US20030044539A1 (en) 2001-02-06 2003-03-06 Oswald Robert S. Process for producing photovoltaic devices
JP2002246619A (ja) * 2001-02-13 2002-08-30 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置の製造方法
JP4433131B2 (ja) 2001-03-22 2010-03-17 キヤノン株式会社 シリコン系薄膜の形成方法
JP2003007629A (ja) 2001-04-03 2003-01-10 Canon Inc シリコン系膜の形成方法、シリコン系膜および半導体素子
GB0114896D0 (en) 2001-06-19 2001-08-08 Bp Solar Ltd Process for manufacturing a solar cell
JP2003069061A (ja) 2001-08-24 2003-03-07 Sharp Corp 積層型光電変換素子
JP4389585B2 (ja) 2001-10-19 2009-12-24 旭硝子株式会社 透明導電性酸化物膜付き基体および光電変換素子
US7309832B2 (en) 2001-12-14 2007-12-18 Midwest Research Institute Multi-junction solar cell device
US6793733B2 (en) 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
JP2003347572A (ja) 2002-01-28 2003-12-05 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜光電変換装置とその製造方法
WO2003073517A1 (en) 2002-02-27 2003-09-04 Midwest Research Institute Monolithic photovoltaic energy conversion device
WO2003085746A1 (fr) 2002-04-09 2003-10-16 Kaneka Corporation Procede de fabrication de convertisseur photoelectrique a films minces en tandem
JP2004006537A (ja) 2002-05-31 2004-01-08 Ishikawajima Harima Heavy Ind Co Ltd 薄膜形成方法及び装置並びに太陽電池の製造方法並びに太陽電池
US6634572B1 (en) * 2002-05-31 2003-10-21 John A. Burgener Enhanced parallel path nebulizer with a large range of flow rates
JP2004071716A (ja) 2002-08-02 2004-03-04 Mitsubishi Heavy Ind Ltd タンデム型光起電力素子及びその製造方法
US20050189012A1 (en) 2002-10-30 2005-09-01 Canon Kabushiki Kaisha Zinc oxide film, photovoltaic device making use of the same, and zinc oxide film formation process
US7402747B2 (en) 2003-02-18 2008-07-22 Kyocera Corporation Photoelectric conversion device and method of manufacturing the device
US6759277B1 (en) * 2003-02-27 2004-07-06 Sharp Laboratories Of America, Inc. Crystalline silicon die array and method for assembling crystalline silicon sheets onto substrates
JP2004296652A (ja) 2003-03-26 2004-10-21 Canon Inc 積層型光起電力素子
JP4241446B2 (ja) 2003-03-26 2009-03-18 キヤノン株式会社 積層型光起電力素子
US20040231590A1 (en) 2003-05-19 2004-11-25 Ovshinsky Stanford R. Deposition apparatus for the formation of polycrystalline materials on mobile substrates
JP2005135986A (ja) 2003-10-28 2005-05-26 Kaneka Corp 積層型光電変換装置
WO2005011001A1 (ja) 2003-07-24 2005-02-03 Kaneka Corporation 積層型光電変換装置
JP4063735B2 (ja) 2003-07-24 2008-03-19 株式会社カネカ 積層型光電変換装置を含む薄膜光電変換モジュール
JP4068043B2 (ja) 2003-10-28 2008-03-26 株式会社カネカ 積層型光電変換装置
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7785672B2 (en) * 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
CN102683391B (zh) 2004-06-04 2015-11-18 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法和设备
JP2006013403A (ja) 2004-06-29 2006-01-12 Sanyo Electric Co Ltd 太陽電池、太陽電池モジュール、その製造方法およびその修復方法
JP4025755B2 (ja) 2004-07-02 2007-12-26 オリンパス株式会社 内視鏡
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US7959987B2 (en) * 2004-12-13 2011-06-14 Applied Materials, Inc. Fuel cell conditioning layer
US7438760B2 (en) * 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
JP4945088B2 (ja) 2005-04-28 2012-06-06 三洋電機株式会社 積層型光起電力装置
DE102005019225B4 (de) 2005-04-20 2009-12-31 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie
JP2006310694A (ja) 2005-05-02 2006-11-09 Kaneka Corp 集積化多接合薄膜光電変換装置
JP2006319068A (ja) 2005-05-11 2006-11-24 Kaneka Corp 多接合型シリコン系薄膜光電変換装置、及びその製造方法
US7375378B2 (en) 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
US7264013B2 (en) * 2005-05-13 2007-09-04 Air Products And Chemicals, Inc. Enhanced purge effect in gas conduit
EP1734589B1 (en) 2005-06-16 2019-12-18 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing photovoltaic module
JP2007035914A (ja) 2005-07-27 2007-02-08 Kaneka Corp 薄膜光電変換装置
US8709162B2 (en) 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7256140B2 (en) 2005-09-20 2007-08-14 United Solar Ovonic Llc Higher selectivity, method for passivating short circuit current paths in semiconductor devices
US20080057220A1 (en) 2006-01-31 2008-03-06 Robert Bachrach Silicon photovoltaic cell junction formed from thin film doping source
US20080047599A1 (en) 2006-03-18 2008-02-28 Benyamin Buller Monolithic integration of nonplanar solar cells
US7235736B1 (en) 2006-03-18 2007-06-26 Solyndra, Inc. Monolithic integration of cylindrical solar cells
US20070227579A1 (en) 2006-03-30 2007-10-04 Benyamin Buller Assemblies of cylindrical solar units with internal spacing
CN101512721A (zh) 2006-04-05 2009-08-19 硅源公司 利用层转移工艺制造太阳能电池的方法和结构
WO2007118252A2 (en) 2006-04-11 2007-10-18 Applied Materials, Inc. System architecture and method for solar panel formation
JP2007305826A (ja) 2006-05-12 2007-11-22 Kaneka Corp シリコン系薄膜太陽電池
CN100392808C (zh) 2006-06-23 2008-06-04 河北工业大学 利用电化学作用去除集成电路晶片表面污染物的方法
US7655542B2 (en) 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
US20080047603A1 (en) 2006-08-24 2008-02-28 Guardian Industries Corp. Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same
US20080153280A1 (en) 2006-12-21 2008-06-26 Applied Materials, Inc. Reactive sputter deposition of a transparent conductive film
US7582515B2 (en) 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080173350A1 (en) 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
JP2008181965A (ja) 2007-01-23 2008-08-07 Sharp Corp 積層型光電変換装置及びその製造方法
EP2133924A4 (en) 2007-02-16 2011-04-27 Mitsubishi Heavy Ind Ltd PHOTOELECTRIC CONVERTER AND MANUFACTURING METHOD THEREFOR

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101302373B1 (ko) * 2011-12-21 2013-09-06 주식회사 테스 태양전지 제조방법

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