KR20080086389A - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents
반도체 장치 및 반도체 장치의 제조 방법 Download PDFInfo
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- KR20080086389A KR20080086389A KR1020080026245A KR20080026245A KR20080086389A KR 20080086389 A KR20080086389 A KR 20080086389A KR 1020080026245 A KR1020080026245 A KR 1020080026245A KR 20080026245 A KR20080026245 A KR 20080026245A KR 20080086389 A KR20080086389 A KR 20080086389A
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- 238000000034 method Methods 0.000 title claims abstract description 122
- 229910052751 metal Inorganic materials 0.000 claims abstract description 388
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 16
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H01L23/528—Geometry or layout of the interconnection structure
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
- 반도체 기판 위에 형성된 반도체 장치로서,소자를 갖는 소자 영역과,상기 소자 영역을 둘러싸는 내습(耐濕) 링과,상기 내습 링과 상기 반도체 장치의 외주단 사이로서 상기 반도체 기판 위에 형성된 절연층과,상기 절연층 중에, 상기 외주단을 따라 연장되는 제 1 금속선과,상기 절연층에 형성된 홈을 갖는 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서,상기 홈은 상기 제 1 금속선 위에 위치하는 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서,상기 제 1 금속선 또는 상기 홈은 불연속부를 갖는 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서,상기 외주단측에 위치하는 상기 제 1 금속선의 측면의 위치가, 상기 외주단 측에 위치하는 상기 홈의 측면의 위치보다 상기 외주단에 가까운 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서,상기 홈은 상기 소자 영역을 둘러싸는 것을 특징으로 하는 반도체 장치.
- 반도체 장치의 제조 방법으로서,소자 영역을 둘러싸는 내습 링 영역에 제 1 배선을 형성하는 공정과,상기 내습 링 영역과 상기 반도체 장치의 외주단 사이에, 상기 외주단을 따라 연장되는 제 2 배선을 형성하는 공정과,상기 제 1 배선 및 상기 제 2 배선을 덮도록 절연막을 형성하는 공정과,상기 외주단과 상기 내습 링 영역 사이의 상기 절연막에 홈을 형성하는 공정을 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 6 항에 있어서,상기 홈을 형성하는 공정은, 상기 제 2 배선 위에 위치하는 상기 절연막을 에칭함으로써 행해지는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 반도체 기판 위로서 제 1 소자 영역을 둘러싸는 제 1 내습 링 영역에, 제 1 배선을 형성하는 공정과,상기 반도체 기판 위로서 상기 스크라이브(scribe) 영역을 사이에 끼고 상기 제 1 소자 영역에 대향하는 제 2 소자 영역을 둘러싸는 제 2 내습 링 영역에, 제 2 배선을 형성하는 공정과,상기 제 1 배선과 상기 스크라이브 영역 사이에, 상기 스크라이브 영역을 따라 연장되는 제 3 배선을 형성하는 공정과,상기 제 2 배선과 상기 스크라이브 영역 사이에, 상기 스크라이브 영역을 따라 연장되는 제 4 배선을 형성하는 공정과,상기 제 1 배선, 상기 제 2 배선, 상기 제 3 배선 및 상기 제 4 배선을 덮는 절연막을 형성하는 공정과,상기 제 1 배선과 상기 스크라이브 영역 사이의 상기 절연막에, 제 1 홈을 형성하는 공정과,상기 제 2 배선과 상기 스크라이브 영역 사이의 상기 절연막에, 제 2 홈을 형성하는 공정과,상기 스크라이브 영역을 따라, 상기 반도체 기판 및 상기 절연막을 절단하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 8 항에 있어서,상기 절단하는 공정 전에, 상기 스크라이브 영역의 상기 반도체 기판 위에, 제 1 소자를 형성하는 공정을 더 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 8 항에 있어서,상기 제 1 홈을 형성하는 공정은, 상기 제 3 배선 위에 위치하는 상기 절연막을 에칭함으로써 행해지고, 상기 제 2 홈을 형성하는 공정은, 상기 제 4 배선 위에 위치하는 상기 절연막을 에칭함으로써 행해지는 것을 특징으로 하는 반도체 장치의 제조 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2007-00074424 | 2007-03-22 | ||
JP2007074424 | 2007-03-22 | ||
JP2007338951A JP5332200B2 (ja) | 2007-03-22 | 2007-12-28 | 半導体装置及び半導体装置の製造方法 |
JPJP-P-2007-00338951 | 2007-12-28 |
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KR20080086389A true KR20080086389A (ko) | 2008-09-25 |
KR100995558B1 KR100995558B1 (ko) | 2010-11-22 |
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KR20170122494A (ko) * | 2016-04-27 | 2017-11-06 | 삼성전자주식회사 | 반도체 장치, 반도체 칩 및 반도체 장치의 제조 방법 |
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KR20170122494A (ko) * | 2016-04-27 | 2017-11-06 | 삼성전자주식회사 | 반도체 장치, 반도체 칩 및 반도체 장치의 제조 방법 |
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US20180102327A1 (en) | 2018-04-12 |
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US20150311164A1 (en) | 2015-10-29 |
KR100995558B1 (ko) | 2010-11-22 |
US10672720B2 (en) | 2020-06-02 |
US10147687B2 (en) | 2018-12-04 |
US20120220103A1 (en) | 2012-08-30 |
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US20080230874A1 (en) | 2008-09-25 |
US9824981B2 (en) | 2017-11-21 |
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